不同晶化工艺对非晶PZT纳米薄膜形核取向生长机理的影响

射频磁控溅射法室温下在Pt/Ti/SiO2/Si上制备非晶Pb(Zr048Ti052)O3薄膜，非晶PZT薄膜分别经常规炉退火(CFA)处理和快速热退火(RTA)处理晶化为（100），（111）不同择优取向的多晶薄膜. 采用x射线衍射测定了薄膜相组分、择优取向度；用原子力显微镜和压电响应力显微镜观察了薄膜表面形貌，以及对应区域由自发极化形成的铁电畴像，观察了不同取向薄膜的电畴分布特征. 结果表明，RTA晶化过程钙钛矿结构PZT结晶主要以PZT/Pt界面处的PtPb化合物为成核点异质形核并类似外延的结晶生长，沿界面结晶速率远大于垂直膜面结晶速率，而CFA晶化样品成核发生在膜内杂质缺陷处，以同质成核为主. 不同的成核机理导致了不同晶面择优取向生长. 关键词： PZT薄膜 结晶 形核 力显微技术     

Processing,Structure, Properties,and Applications of PZT Thin Films

There has been a resurgence of complex oxides of late owing to their ferroelectric and ferromagnetic properties. Although these properties had been recognized decades ago, the renewed interest stems from modern deposition techniques that can produce high quality materials and attractive proposed device concepts. In addition to their use on their own, the interest is building on the use of these materials in a stack also. Ferroelectrics are dielectric materials that have spontaneous polarization in certain temperature range and show nonlinear polarization–electric field dependence called a hysteresis loop. The outstanding properties of the ferroelectrics are due to non-centro-symmetric crystal structure resulting from slight distortion of the cubic perovskite structure. The ferroelectric materials are ferroelastic also in that a change in shape results in a change in the electric polarization (thus electric field) developed in the crystal and vice versa. Therefore they can be used to transform acoustic waves to electrical signal in sonar detectors and convert electric field into motion in actuators and mechanical scanners requiring fine control. In a broader sense the ferroelectric materials can be used for pyroelectric and piezoelectric sensors, voltage tunable capacitors, infrared detectors, surface acoustic wave (SAW) devices, microactuators, and nonvolatile random-access memories (NVRAMs), including the potential production of one transistor memory cells, and applications requiring nonlinear optic components. Another set of potential applications seeks to exploit the ferroelastic properties in stacked templates where they are juxtaposed to ferromagnetic materials. Doing so would allow the control of magnetic properties with electric field, which is novel. Such templates taking advantage two or more properties acquired a new name and now goes by multiferroics. After a brief historical development, this article discusses technological issues such as growth and processing, electrical and optical properties, piezo, pyro, and ferroelectric properties, degradation, measurements methods, and application of mainly lead-zirconate-titanate (PZT = PbZr_1?xTi_xO₃). The focus on PZT stems from its large electromechanical constant, large saturation polarization and large dielectric constant.     

Crystallization behaviour of Ge17Sb23Se60 thin films

The crystallization behaviour of as-prepared and nucleated Ge₁₇Sb₂₃Se₆₀ thin films was studied by means of differential scanning calorimetry, X-ray diffraction analysis and scanning electron microscopy. Detailed analysis of the non-isothermal crystal growth kinetics was performed; the apparent activation energy, kinetic model and value of the pre-exponential factor were determined. The kinetic behaviour was found to be surprisingly close to the ideal Johnson–Mehl–Avrami nucleation-growth process, with the only non-ideality being the prolonged peak end tail (which may be a specificity associated with certain thicknesses of thin layers). This corresponds to the initiation of crystal growth in agreement with the classical nucleation theory, with the amount of mechanical defects and strains being negligible. The value of the kinetic parameter suggests two-dimensional crystal growth, which is consistent with the idea of macroscopic crystallites growing in a sterically restricted thin layer. A similar conclusion can be made on the basis of direct microscopic observation of the crystallites’ morphology.     

非晶钛酸铋的晶化过程

利用差热分析、X射线衍射和透射电子显微镜等技术对溶胶-凝胶法合成的凝胶的晶化过程进行了分析，实验结果表明，Bi₄Ti₃O₁₂非晶凝胶晶化过程经历了四个过程：首先在433℃先形成了Bi₂O₃和TiO₂亚稳相，然后在488℃时TiO₂亚稳相与Bi₂O₃反应形成Bi，Ti复合氧化物亚稳相Bi₂T 关键词： 钛酸铋 铁电材料 溶胶凝胶 非晶 晶化过程     

Statistical analyses of repolarisation current of a PZT film deposited on ITO electrode with different thermal treatments

In the vast application fields of lead zirconate titanate (PZT) thin films, of particular interest are the interaction effects occurring at the ferroelectric–substrate interface [E. Bruno, M.P. De Santo, M. Castriota, S. Marino, G. Strangi, E. Cazzanelli and N. Scaramuzza, J. Appl. Phys. 103 (2008) p.064103; S. Dunn and R.W. Whatmore, J. Eur. Ceram. Soc. 22 (2002) p.825]. Relevant for this purpose are polarity-sensitive liquid crystals (LC) cells and micro- and nanoelectronic applications [S. Marino, M. Castriota, G. Strangi, E. Cazzanelli and N. Scaramuzza, J. Appl. Phys. 102, selected for Virtual Journal of Nanoscale Science & Technology, 30 July 2007 (2007) p.013002]. The polarisation current was investigated of a PZT film (PbZr_0.47Ti_0.53O₃) obtained by sol–gel synthesis and deposited by spin coating on an indium tin oxide (ITO) electrode. The different behaviour exhibited by such a system when the support electrode was previously submitted to a thermal treatment was attributed to the change of the electrical properties of the ITO layer. In particular, a higher negative charge in the conductive band of the ITO electrode seems to be responsible for a higher order in the ferroelectric film.     

PZT铁电薄膜纳米尺度铁电畴的场致位移特性

利用扫描力显微术的压电响应模式，并基于逆压电效应原理，研究了梯度组成的PZT铁电薄膜纳米尺度铁电畴的场致位移特性.获得了源于纳米尺度铁电畴的压电效应和电致伸缩效应贡献的场致位移回滞线，以及源于线性压电效应和电畴反转效应综合贡献的纳米尺度压电位移 场强蝶形曲线，证实了Caspari Merz理论在纳米尺度上的有效性.发现了梯度铁电薄膜存在纳米尺度印刻现象，认为该现象的内因源于薄膜中的内偏场. 关键词： PZT铁电薄膜 场致位移 纳米尺度 扫描力显微术     

PZT四方相区介电常数εr与晶格畸变关系的研究

从Haun的PZT热力学理论出发，给出了PZT四方相区介电常数ε_r与晶格畸变c/a关 系的基本方程，并深入地根据相关实验资料和物理图像的合理推论，建立了关于晶格畸变c/ a与介电常数ε_r相互依赖的基本关系式.然后，根据该基本关系式仔细地研究了PZT四 方相区晶格畸变c/a对介电常数ε_r影响的物理图像.与相关实验资料比较表明，基本 关系式得到的介电常数ε_r随晶格畸变c/a的变化规律,与相关实验结果相比较，两者 吻合得 关键词： 晶格畸变 r')" href="#">介电常数ε_r 四方相 PZT     

不同衬底上Pb(Zr0.52Ti0.48)O3择优取向铁电薄膜的制备和研究

通过MOD法在Si(100)和Pt(111)/Ti/SiO₂/Si基片上制备出LaNiO₃ ( LNO)薄膜.再通过修 正的Sol-gel法，在Pt(111)/Ti/SiO₂/Si,LNO/Si(100)和LNO/Pt/Ti/SiO_{2< /sub>/Si三种衬底上 制备出具有择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜. 经XRD分析表明，L NO薄膜具有(100)择优取向的类钙钛矿结构；PZT薄膜均具有钙钛矿结构，且在Pt(111)/Ti/S iO2/Si衬底上的薄膜以(110)择优取向，在LNO/Pt/Ti/SiO2/Si和LN O/Si(100)衬底上的 薄膜以(100)择优取向.经场发射SEM分析和介电、铁电性能测试表明，在LNO/Si和LNO/Pt/Ti /SiO2/Si衬底上的PZT薄膜的平均粒径、介电常数以及剩余极化强度均比以Pt/T i/SiO2/Si为衬底的薄膜大. 关键词： 3}薄膜')" href="#">LaNiO₃薄膜 PZT铁电薄膜 择优取向 剩余极化强度     

Field-induced phase transitions in chiral smectic liquid crystals studied by the constant current method

In ferroelectric liquid crystals, phase transitions can be induced by an electric field. The current constant method allows these transition to be quickly localized and thus the(E, T) phase diagram of the studied product can be obtained.In this work, we make a slight modification to the measurement principles based on this method. This modification allows the characteristic parameters of ferroelectric liquid crystal to be quantitatively measured. The use of a current square signal highlights a phenomenon of ferroelectric hysteresis with remnant polarization at null field, which points out an effect of memory in this compound.     

PZT铁电薄膜纳米尺度畴结构的扫描力显微术研究

利用扫描力显微术中压电响应模式原位研究了（111）择优取向的PZT60/40铁电薄膜的纳米尺度畴结构及其极化反转行为.铁电畴图像复杂的畴衬度与晶粒中的畴排列和晶粒的取向密切相关.直接观察到极化反转期间所形成的小至30nm宽的台阶结构，该台阶结构揭示了（111）取向的PZT60/40铁电薄膜在极化反转期间其畴成核与生长机理主要表现为铁电畴的纵向生长机理. 关键词： 畴结构 反转机理 PZT薄膜 扫描力显微术     

(111)取向(Pb,La)TiO3铁电薄膜中90°纳米带状畴与热释电性能的研究

采用射频磁控溅射技术在Pt/Ti/SiO₂/Si(100)衬底上生长了掺镧钛酸铅(PLT)铁电薄膜.用X射线衍射技术(XRD)研究了PLT薄膜结晶性能，结果表明PLT薄膜为 (111)择优取向钙钛矿相织构.使用原子力显微镜(AFM)和压电响应力显微镜(PFM) 分别观察了PLT薄膜的表面形貌和对应区域的电畴结构.PFM观察显示PLT薄膜中存在90°纳米带状畴，电畴的极化为首尾相接的低能量的排列方式，带状畴的宽度为20—60nm.研究了PLT10铁电薄膜的制备条件与性能之间的关系.发现在优化条件下制备的PLT10铁电薄膜的介电常数ε_r为365、介电损耗tgδ为0.02，热释电系数γ为2.18×10^-8C·(cm²·K)^-1，可以满足制备非制冷红外探测器的需要. 关键词： PLT薄膜 电畴 PFM 极化     

非晶态Se薄膜的自发晶化研究

利用真空热蒸镀的方法制备了非晶Se薄膜,测试了稳定的非晶Se薄膜,不稳定的非晶Se薄膜和初始自发晶化的非晶Se薄膜的透射率光谱和拉曼光谱,对透射率光谱曲线进行了拟合,计算了薄膜的厚度和折射率随波长的变化关系。在自我晶化过程中,Se薄膜折射率逐渐增大;随波长增大,折射率则减小,初始自发晶体的Se薄膜中,出现标志Se8环和链的结构,不完整的环和链结构在自发晶化过程中得到了增强。     

Synthesis and Characterization of Hybrid Silica/Polyimides Obtained by Sol-Gel Processing

This work reports the synthesis and characterization of some hybrid silica/polyimides obtained by the sol-gel process. These hybrids present good thermostability with the degradation process starting above 470°C. The glass transition temperatures of the hybrids are slightly higher than that of the pure polyimide film, while dynamic contact angles are lower than that of the pure polyimide. The experiments show that increasing the silica content improves the thermal stability and decreases the dielectric constant of the hybrid polyimide films. Moreover, increasing the silica content leads to a higher rigidity of the hybrid polyimide films, as was proved by dynamic mechanical analysis, and to a slight decrease of the dynamic contact angles.     

Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones

By taking into account structural transition zones near the lateral and thickness direction edges, this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation. The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.     

冲击加载下PZT 95/5铁电陶瓷的脉冲大电流输出特性

极化了的PZT 95/5铁电陶瓷在冲击波作用下发生铁电相到反铁电相的结构相变，释放出被束缚的电荷，流经外电路，形成脉冲电流.基于这一原理，针对低感、低阻负载的要求，对PZT 95/5铁电陶瓷 LRC电路响应进行了理论分析，并开展了实验研究.实验采用多组PZT 95/5铁电陶瓷并联，获得了前沿小于500ns，峰值大于5kA的大电流. 关键词： PZT 95/5铁电陶瓷 冲击波 爆电电源     

BIT/PLZT/BIT多层铁电薄膜结构设计及制备的实验研究

为了有效阻止锆钛酸铅镧(PLZT)与半导体界面发生反应和互扩散,根据锆钛酸铅镧和钛酸铋(B IT)各自的铁电性能,提出了一种新的设计思想———多层铁电薄膜.采用脉冲准分子激光淀积(PLD)方法制备了B IT/PLZT/B IT多层铁电薄膜.采用Sawyer-Tower电路测量,其剩余极化强度Pr=34μC/cm2,矫顽场Ec=40 kV/cm.这种结构吸收了锆钛酸铅镧和钛酸铋的优点,提高了铁电薄膜的铁电性能.     

Comparison of the effect of PLT and PZT buffer layers on PZT thin films for ferroelectric materials applications

In order to study the effect of different buffer layers on the Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films, 10-nm thick (Pb_0.72La_0.28)Ti_0.93O₃ (PLT) and Pb(Zr_0.52Ti_0.48)O₃ buffer layers have been deposited on the Pt(1 1 1)/Ti/SiO₂/Si substrates by pulsed laser deposition, respectively. The top buffer layers were also deposited on PZT thin films with the same thickness of the seed layers in order to enhance the fatigue characteristics of PZT thin films. We compared the results of dielectric constant, hysteresis loops and fatigue resistance characteristics. It was found that the dielectric properties of PZT thin films with PLT buffer layers were improved by comparing with PZT thin films with PZT buffer layers. The polarization characteristics of PZT thin films with PLT buffer layers were observed to be superior to those of PZT thin films using PZT buffer layers. The remanent polarization of PZT thin films showed 36.3 μC/cm² and 2.6 μC/cm² each in the case of use PLT and PZT buffer layers. For the switching polarization endurance analysis, PZT thin films with PLT buffer layers showed more excellent result than that of PZT thin films with PZT buffer layers.     

外延PbZr0.4Ti0.6O3薄膜厚度对其铁电性能的影响

从Landau-Devonshire唯象理论出发，考虑到晶格失配导致的NFDA3位错应力场与极化场的耦合，研究了在SrTiO₃衬底上外延生长的PbZr_0.4Ti_0.6O₃薄膜厚度对其自发极化强度、电滞回线的影响. 结果表明，产生刃位错的PbZr_0.4Ti_0.6O₃薄膜临界厚度为～1.27nm，当薄膜厚度大于临界厚度时，在所形成的位错附近，极化强度出现急剧变化，形成自发极化强度明显减弱的“死层”；随着薄膜厚度的减小，位错间距增大，“死层”厚度与薄膜总厚度之比增加. 由薄膜电滞回线的变化情况可知，其剩余极化强度随着薄膜厚度的减小而逐渐减小. 关键词： 铁电薄膜 自发极化强度 电滞回线 位错     

(111)择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜的制备及研究

选用不同浓度的Pb(Zr_0.52Ti_0.48)O₃溶胶，用Sol-gel法在Pt/Ti/SiO₂/Si基片上沉积一层厚度不同的Pb(Zr_0.52Ti_0.48)O₃ (PZT52)过渡层，经400℃烘烤、550℃退火等程序后，再用Sol-gel法在PZT52过渡层上沉积Pb(Zr_0.52Ti_0.48)O _{关键词： PZT铁电薄膜 择优取向 过渡层 剩余极化强度}     

冲击波加载下PZT 95/5铁电陶瓷的电阻率研究

利用炸药爆炸产生的平面冲击波，研究了垂直模式冲击波加载下PbZr_0.95Ti_0.05O₃ (PZT 95/5)铁电陶瓷冲击波压缩区域的电阻率变化.在建立的模型中考虑了冲击波压缩区域的有限电阻率，计算结果表明：在压力约2.0GPa，负载短路的条件下，PZT 95/5铁电陶瓷冲击波压缩区域的电阻率从初始10⁷—10¹¹Ωcm迅速降到最小值约40Ωcm，然后基本保持在120—140Ωcm之间.