Modeling of a millimeter wave planar Schottky diode using both improved equivalent circuit model and 3D-EM model

In this paper, a planar Schottky varistor diode is studied and modeled by equivalent circuit method and three dimensional full wave electromagnetic (3D-EM) method, respectively. The diode's equivalent circuit is extracted from millimeter-wave small-signal S-parameter measurements. Since the package of the diode influences the electromagnetic field distribution at millimeter and sub-millimeter wavelengths, a 3D-EM model and an improved equivalent circuit model is applied to describe the field precisely. The simulated results of equivalent circuit, improved equivalent circuit and 3D-EM model are compared with the measured results. In addition, the effects caused by silver paste conductive adhesive are considered in 3D-EM model and improved equivalent circuit model. The results show that both the 3D-EM model and improved equivalent circuit model have good S-parameter consistency with measured results.     

GaN基肖特基势垒二极管结构优化研究进展

作为宽禁带半导体器件,GaN基肖特基势垒二极管(SBD)有耐高压、耐高温、导通电阻小等优良特性,这使得它在电力电子等领域有广泛应用。本文首先综述了SBD发展要解决的问题;然后,介绍了GaN SBD结构、工作原理及结构优化研究进展;接下来,总结了AlGaN/GaN SBD结构、工作原理及结构优化研究进展,并着重从AlGaN/GaN SBD的外延片结构、肖特基电极结构以及边缘终端结构等角度,阐述了这些结构的优化对AlGaN/GaN SBD性能的影响;最后,对器件进一步的发展方向进行了展望。     

Optimum coupling of a Gaussian beam to a corner reflector with a four-wavelength antenna

The coupling of a Gaussian radiation beam to a corner reflector with a four-wavelength long wire antenna was studied theoretically and experimentally. The antenna configuration in conjunction with a Schottky barrier diode is recently used widely as a fast submillimeter wave detector. The optimum angle focusing the radiation to the antenna has been obtained and is 11° (half-width at the 8.7dB points).     

Design,fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection

A Schottky diode was designed and fabricated on an n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for RF power detection. The processing steps used in the fabrication were the conventional steps used in standard GaAs processing. Current–voltage measurements showed that the devices had rectifying properties with a barrier height of 0.5289–0.5468 eV. The fabricated Schottky diodes detected RF signals well and their cut-off frequencies up to 20 GHz were estimated in direct injection experiments. To achieve a high cut-off frequency, a smaller Schottky contact area is required. The feasibility of direct integration with the planar dipole antenna via a coplanar waveguide transmission line without insertion of matching circuits was discussed. A higher cut-off frequency can also be achieved by reducing the length of the coplanar waveguide transmission line. These preliminary results represent a breakthrough as regards direct on-chip integration technology, towards the realization of a ubiquitous network society.     

A 60-GHz Wideband Slot Antenna Based on Substrate Integrated Waveguide Cavity

This paper proposes a new wideband W-band substrate integrated waveguide (SIW) cavity-backed slot (CBS) antenna. The SIW cavity suppresses the backward radiation and ensures this antenna have a very low profile (only about 4% of the operating wavelength). Several techniques, such as slot resonator with semicircular end, quarter-wavelength microstrip resonator, are introduced to improve impedance matching. The studied results demonstrate that this antenna has wide operating bandwidth in 54.3–67 GHz (about 20.9% of the fractional bandwidth), unidirectional radiation pattern and good linear polarization characteristic. These properties are very suitable for RF front-end system-on-package (SoP) design in millimeter wave wireless communication systems. This work was supported by the National Nature Science Foundation of China (60501011, 90505001), the Specialized Research Fund for the Doctoral Program of Higher Education of China (No. 20060614005) and the Creative Research Team Program of UESTC.     

Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height

This paper investigates the thermal activation behaviour of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height by numerical simulation. The analytical Gaussian distribution model predicted that the I--V--T curves may intersect with the possibility of the negative thermal activation of current, but may be contradictory to the thermionic emission mechanism in a Schottky diode. It shows that the cause of the unphysical phenomenon is related to the incorrect calculation of current across very low barriers. It proposes that junction voltage V_j, excluding the voltage drop across series resistance from the external bias, is a crucial parameter for correct calculation of the current across very low barriers. For correctly employing the thermionic emission model, V_j needs to be smaller than the barrier height Ф. With proper scheme of series resistance connection where the condition of V_j > Ф is guaranteed, I--V--T curves of an inhomogeneous Schottky diode with a Gaussian distribution of barrier height have been simulated, which demonstrate normal thermal activation. Although the calculated results exclude the intersecting possibility of I--V--T curves with an assumption of temperature-independent series resistance, it shows that the intersecting is possible when the series resistance has a positive temperature coefficient. Finally, the comparison of our numerical and analytical results indicates that the analytical Gaussian distribution model is valid and accurate in analysing I--V--T curves only for small barrier height inhomogeneity.     

Measured mixer noise temperature and conversion loss of a cryogenic Schottky diode mixer near 800 GHz

We accurately measured the noise temperature and conversion loss of a cryogenically cooled Schottky diode operating near 800 GHz, using the UCB/MPE Submillimeter Receiver at the James Clerk Maxwell Telescope. The receiver temperature was in the range of the best we now routinely measure, 3150 K (DSB). Without correcting for optical loss or IF mismatch, the raw measurements set upper limits ofT _M=2850 K andL _M=9.1 dB (DSB), constant over at least a 1 GHz IF band centered at 6.4 GHz with an LO frequency of 803 GHz. Correction for estimated optical coupling and mismatch effects yieldsT _M=1600 K andL _M=5.5 dB (DSB) for the mixer diode itself. These values indicate that our receiver noise temperature is dominated by the corner cube antenna's optical efficiency and by mixer noise, but not by conversion loss or IF mismatch. The small fractional IF bandwidth, measured mixer IF band flatness from 2 to 8 GHz, and similarly good receiver temperatures at other IF frequencies imply that these values are representative over a range of frequencies near 800 GHz.     

Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces

We perform first-principles density functional calculations to study the electronic structure of Ni/HfO₂ and Ni/SiO₂ interfaces and the effect of O-vacancy (V_O) defects on the Schottky barrier height and the effective work function. We generate two interface models in which Ni is placed on O-terminated HfO₂ (1 0 0) and α-quartz (1 0 0) surfaces. As the concentration of V_O defects at the interface increases, the p-type Schottky barrier height tends to increase in the Ni/HfO₂ interface, due to the reduction of interface dipoles, whereas it is less affected in the Ni/SiO₂ interface.     

60Co γ-射线辐照对肖特基二极管1/f噪声的影响

在肖特基二极管(Schottky barrier diode,SBD)辐照损伤机理和总剂量效应分析的基础上,利用1/f噪声的迁移率涨落和载流子数涨落模型,深入研究辐照损伤对器件1/f噪声的影响. 研究结果表明,辐照诱生新的界面态,改变界面态密度分布,进而调制了肖特基势垒高度,增大表面复合速度是引起器件性能退化主要原因,也是1/f噪声剧烈增加的主要原因. 正因为如此,噪声与器件退化存在相关性,即噪声拟合参数B越大,偏离标准值越多,器件可靠性越差,抗辐照 关键词： 肖特基二极管 f噪声')" href="#">1/f噪声 60Co γ射线')" href="#">⁶⁰Co γ射线 界面态     

高k栅介质对肖特基源漏超薄体SOI MOSFET性能的影响

研究了高k栅介质对肖特基源漏超薄体SOI MOSFET性能的影响.随着栅介质介电常数增大,肖特基源漏(SBSD) SOI MOSFET的开态电流减小,这表明边缘感应势垒降低效应(FIBL)并不是对势垒产生影响的主要机理.源端附近边缘感应势垒屏蔽效应(FIBS)是SBSD SOI MOSFET开态电流减小的主要原因.同时还发现,源漏与栅是否对准,高k栅介质对器件性能的影响也不相同.如果源漏与栅交叠,高k栅介质与硅衬底之间加入过渡层可以有效地抑制FIBS效应.如果源漏偏离栅,采用高k侧墙并结合堆叠栅结构,可以提高驱动电流.分析结果表明,来自栅极的电力线在介电常数不同的材料界面发生两次折射.根据结构参数的不同可以调节电力线的疏密,从而达到改变势垒高度,调节驱动电流的目的. 关键词： k栅介质')" href="#">高k栅介质 肖特基源漏(SBSD) 边缘感应势垒屏蔽(FIBS) 绝缘衬底上的硅(SOI)     

Optical and electrical characterization of TiO2 nanotube arrays on titanium substrate

Novel oriented aligned TiO₂ nanotube (TN) arrays were fabricated by anodizing titanium foil in 0.5% HF electrolyte solution. It is indicated that the sizes of the TNs greatly depended on the applied voltages to some extent. The electrical properties of the TN arrays were characterized by current-voltage (I-V) measurements. It exhibits a nonlinear, asymmetric I-V characterization, which can be explained that there exists an n-type semiconductor/metal Schottky barrier diode between TN arrays and titanium substrate interface. The absorption edges shift towards shorter wavelengths with the decrease of the anodizing voltages, which is attributed to the quantum size effects. At room temperature, a novel wide PL band consisting of four overlapped peaks was observed in the photoluminescence (PL) measurements of the TN arrays. Such peaks were proposed to be resulted from the direct transition X₁ → X₂/X₁, indirect transition Γ₁ → X₂/X₁, self-trapped excitons and oxygen vacancies, respectively.     

8mm TE13 Mode Gyrotron

The design of a 8mm TE ₁₃ mode gyrotron is given in this paper. Discussions about the selection of the dimensions of the RF structure and electron gun are presented. Calculated results of the operating parameters of the gyrotron are also given. At 37.5GHz, pulse power 56kW is obtained for the gyrotron manufactured according to our design. Mode pattern obtained by scorching method shows that the mode of the output millimeter wave is TE ₁₃.     

双层钙钛矿La1.8Ca1.2Mn2O7磁性相关I-V非线性与电输运性质

采用传统固相反应法制备了双层钙钛矿结构锰氧化物La_1.8Ca_1.2Mn₂O₇陶瓷,并用X射线粉末衍射法,扫描电镜,HL5500PC Hall效应分析仪和综合物性测量系统(PPMS)对其磁、电性质进行了表征.结果表明:经过两次高温烧结可合成具有双层Sr₃Ti₂O₇型四方结构的La_1.8Ca_1.2Mn_2<     

Effect of absorbed pump power on the quality of output beam from monolithic microchip lasers

The dependence of the beam propagation factor (M ² parameter) with the absorbed pump power in the case of monolithic microchip laser under face-cooled configuration is extensively studied. Our investigations show that the M ₂ parameter is related to the absorbed pump power through two parameters (α and β) whose values depend on the laser material properties and laser configuration. We have shown that one parameter arises due to the oscillation of higher order modes in the microchip cavity and the other parameter accounts for the spherical aberration associated with the thermal lens induced by the pump beam. Such dependency of M ² parameter with the absorbed pump power is experimentally verified for a face-cooled monolithic microchip laser based on Nd³⁺ -doped GdVO₄ crystal and the values of α and β parameters were estimated from the experimentally measured data points.