Optical characterization of laser-induced crystallized silicon films

Optical absorption coefficient spectra of thin silicon films were precisely investigated using a simple reflectance system with total reflectance mirrors placed on the rear side of samples in order to cancel an interference effect in a range between 1.1 eV and 3 eV. The absorption coefficient decreased according to crystallization as the laser energy increased and it got similar to that of single crystalline silicon in the range of 1.7 eV 3 eV. However, the absorption coefficient was higher than 10² cm^–1 in the photon energy lower than 1.3 eV. This probably results from band tail states caused by defect states localized at grain boundaries in the crystallized films. 2.5%-phosphorus doped laser crystallized silicon films had a high optical absorption coefficient ( > 10⁴ cm^–1) in the low photon energy range (1.1 eV 1.7 eV) caused by free carriers produced from the dopant atoms activated in the silicon films. The experimental results gave the carrier density of 1.3 × 10²¹ cm³ and the carrier mobility of 20 cm²/Vs.     

Experimental and theoretical investigation of third-harmonic generation in phase-matched dye solutions

The phase-matched third-harmonic light generation in dye solutions is studied experimentally and theoretically. In the experiments picosecond light pulses of a passive mode-locked Nd-glass laser are converted to the third-harmonic frequency. A third-harmonic conversion efficiency of up to 4×10^–4 was achieved for one of the dyes investigated (1,3,3,1,3,3-hexamethylindocarbocyanine iodide in hexafluoroisopropanol). The theoretical calculations determine the influence of various dye and solvent parameters on the conversion efficiency. The conversion efficiency is found to be limited by excited-state absorption of pump laser light and third-harmonic light from the S₁-state to higher singlet states. The S₁-state is mainly populated by two-photon absorption. Amplified spontaneous emission may reduce the limiting effects of excited-state absorption. Phase changes caused by the non-linear refractive index and the refractive index dispersion within the spectral bandwidth of the laser pulses reduce the conversion efficiency. Under ideal conditions conversion efficiencies up to 10% may be achieved.     

Photoinduced Oxidation of Diphenylbisanthene and Its Spectral Manifestations

The absorption and fluorescence spectra of diphenylbisanthene (DPB) in n-octane and benzene at 300 and 77 K have been investigated. The appreciable Stokes shift of the fluorescence band (180 cm^–1 in n-octane and 440 cm^–1 in benzene) points to the nonplanar character of the aromatic skeleton of DPB, which has been confirmed by results of the optimization of the molecule geometry by the AMI quantum-mechanical method. It has been found that spectral manifestations of the products of photoinduced transformations of DPB molecules are observed in the UV region (200–350 nm), and it has been shown that the observed photochemical process is two orders of magnitude less effective than for diphenylhelianthrene. On the basis of the experimental data and the results of the quantum-chemical calculations of the electronic spectra of molecules of DPB and endoperoxides (ZINDO/S method), it has been concluded that the end products of DPB phototransformations are its endobiperoxides in which —O—O— groups are added to the phenyl-substituted benzene rings of the aromatic skeleton.     

Optical properties of ternary ZnS x Se1−x polycrystalline thin films

Ternary ZnS_xSe_1–x polycrystalline thin films were prepared by evaporation in vacuum of 10^–5 Torr. The molecular fractionx varied in the region ox1. The optical constants (the refractive indexn, the absorption indexk, and the absorption coefficient) were determined in the wavelength range 300–1600nm. A plot representing ₂=f(hv) shows that the ZnS_xSe_1–x polycrystalline thin films of different compositions have two direct transitions corresponding to the energy gapsE andE+. The variation in eitherE orE+ withx indicates that this system belongs to the amalgamation type. Such variation follows a quadratic equation. The bowing parameter was found to be 0.456 eV, roughly equal to the calculated value 0.60 eV using the empirical pseudopotential method based on the virtual-crystal approximation, in which the disorder effect has not been taken into account.     

Instantaneous gain and excited state absorption in two carbocyanine dyes

The single-pass gain of 4 · 10^–5 mole/liter solutions of 3,3-diethylthiatricarbocyanine iodide (DTTC) in methanol and 3,3-diethylthiadicarbocyanine iodide (DTDC) in acetone, optically pumped by a giant pulse ruby laser, were measured as a function of pump power, wavelength, and time. The transverse pumping laser pulse was synchronized with a probing pulse from a dye laser. Both low-signal and saturated gain measurements were made in the wavelength range 7860–8066 Å for DTTC and 7059–7412 Å for DTDC dye. The pumping pulse widths at half-power were 15 ± 5 nsec, and the pumping power density was varied over a range of 0–7 MW/cm². Using a steady-state theory, lifetime and cross sections for excited states were determined.This research is supported by the National Research Council of Canada. A summary of the present work was reported at the First All-Union Conference on Complex Organic Dye Lasers, Minsk, USSR, October 22–24, 1975.Published in Zhurnal Prikladnoi Spektroskopii, Vol. 26, No. 3, pp. 487–496, March, 1977.     

Femtosecond-pulse laser ablation of human corneas

A femtosecond pulse laser in the visible spectral region shows promise as a potentially new powerful corneal sculpting tool. It combines the clinical and technical advantages of visible wavelengths with the high ablation quality observed with nanosecond-pulse excimer lasers at 193 nm. A femtosecond and a nanosecond dye laser with pulse durations of 300 fs and 7 ns, and centre wavelengths at 615 nm and 600 nm, respectively, both focused to an area of the order of 10^–5 cm², have been applied to human corneal ablation. Nanosecond laser pulses caused substantial tissue disruption within a 30–100 m range from the excision edge at all fluences above the ablation threshold of F _th60 J cm^–2 (I _th9 GW cm^–2). Completely different excisions are produced by the femtosecond-pulse laser: high quality ablations of the Bowman membrane and the stroma tissue characterised by damage zones of less than 0.5 m were observed at all fluences above ablation threshold of F _th1 J cm^–2 or I _th3 TW cm^–2 (3×10¹² W cm^–2). The transparent cornea material can be forced to absorb ultrashort pulses of extremely high intensity. The fs laser generates its own absorption by a multiphoton absorption process.     

Submillimeter laser action of CW optically pumped CF2Cl2 (Fluorocarbon 12)

Eleven new CW far infrared (FIR) laser lines have been observed in the 600 m–1200 m range from the CF₂Cl₂ (Fluorocarbon 12) molecule optically pumped by a CO₂ laser. A 510^–4–10^–3 accuracy is achieved in the measurement of the FIR wavelengths.The frequency offset between the CO₂ pump center and the absorption line centers are measured using the transferred Lamb dip technique. Owing to a recent spectroscopic study of the CF₂ ³⁵Cl₂ molecule three lines may be assigned with great confidence as rotational transitions in thev ₆ vibrational band 923 cm^–1 of this main isotope.     

Optical bistability produced by resonant Joule's heating of semiconductors

The thermal hysteresis of Joule's absorption of infrared radiation in then-type semiconductor magnetoplasma is analysed. Such bistability is connected with the temperature dependence of the relaxation time of free electrons, their density being constant. The resonant Joule's absorption bistability of the pumping infrared wave near a Langmuir resonance of free electrons is discussed as well as the hysteresis cross-modulation of an infrared probing wave by means of a pumping microwave. The possibilities of smooth detuning of the hysteresis regime due to a magnetic-field control and low energy thresholds of these regimes are illustrated for InSb thin films in relatively weak magnetic fieldsH1–2 kG.     

Diamond-like carbon films prepared by pulsed-laser evaporation

Diamond-like carbon thin films were prepared by pulsed-laser evaporation. In this method a carbon target was irradiated by a XeCl laser with a power density of 3×10⁸ W/cm² and carbon atoms, together with a small number of ions, were produced. Deposition rates and film properties changed sensitively with substrate temperature. The films deposited at 50°C were diamond-like, having reasonable hardness, high refractive index (2.1–2.2 at 633 nm), optical transparency in the infrared, electrical resistivity of 10⁸ cm and chemical inertness (no dissolution in a HFHNO₃ solution). The band gap measured from optical absorption was 1.4 eV. Raman spectrum and infrared absorption, whose features varied with the substrate temperature, were also measured. The films were amorphous and no crystallinity was observed, as confirmed by x-ray diffraction, transmission electron diffraction and Raman spectroscopy. Hydrogen atoms were incorporated in the films with a typical H/C ratio of 0.3. The application of a negative bias to the substrate modified the deposition due to the presence of ions.     

Y1Ba2Cu3O7-δ thin films from KrF laser ablation with substrate heating and in situ patterning by CO2 laser radiation

Y₁Ba₂Cu₃O_7– thin films were deposited by KrF laser ablation while replacing conventional contact heating by cw CO₂ laser irradiation of the substrate front surface. The HTSC films obtained on (100)ZrO₂ showed T _c(R=0)=90 K, T(90–10%)=0.5 K, j _c=2.5 × 10⁶ A/cm², a sharp transition in the ac susceptibility X(T), and pure c-axis orientation. Micrographs of thin films (< 0.5 m) showed a smooth morphology while thick films (>1 m) contained many crystallites sticking in the bulk material. Furthermore, in situ patterning was achieved during deposition by local laser heating of a selected substrate surface area. The resulting planar films contained amorphous, semiconducting parts only 1 mm or less apart from crystalline material showing the above HTSC quality.Presented at LASERION '91, June 12–14, 1991, München (Germany)     

IR Reflection of Thin Bi4Ge3O12 Films

The spectra of IR reflection of the systems thin Bi₄Ge₃O₁₂ film–substrate made of molten -SiO₂ quartz in the region 10–1600 cm^–1 at 295 K are investigatedterpretation of fundamental vibrations in the region 10–800 cm^–1 and two phonon processes in the region 800–1600 cm^–1 are considered.     

A high-power subpicosecond distributed feedback dye laser system pumped by a mode-locked Nd: YAG laser

The design and operation characteristics of a distributed feedback dye laser (DFDL) system pumped by the second harmonic of a flashlamp pumped mode-locked Nd: YAG laser are described. The DFDL oscillator facilitates a large tuning range with nearly Fourier limited pulse durations of about 1.6 ps. The combined action of saturated absorption and amplification results in a pulse shortening to about 600 fs, with small fluctuations in the pulse duration. Output pulse energies of more than 400 J are achieved, corresponding to a peak power of more than 650 MW. Since the dye amplifiers are pumped by pulses of only 25 ps duration the amplified spontaneous emission (ASE) is very low, typically less than 10^–4.     

Planar microwave biased RF-SQUIDs in niobium technology

A planar version of microwave biased SQUIDs is described. In this type of SQUID, a superconducting half-wavelength microstrip resonator serves as tank circuit, into which the SQUID is integrated. For evaluation of this type of SQUID, samples were prepared from thin Nb films on sapphire substrates, using tunnel junctions as Josephson elements. When operated in hysteretic mode, signal voltages of up to 80 V were achieved, corresponding to a flux noise of 4×10^–6 ₀/Hz and an energy resolution of 2×10^–31 J/Hz.     

Pulsed 532 nm laser wirestripping: Removal of dye-doped polyurethane insulation

Removal of rhodamine 6G doped polyurethane insulation coated onto 50 m diameter wire is shown to proceed efficiently and cleanly by irradiation with 532 nm Q-switched pulses from a Nd:YAG laser. The stripping action produced by this method is similar in quality to excimer laser wirestripping. Several experimental parameters were explored including fluence, pulse duration, dye concentration, and the number of incident pulses. Acceptable stripping conditions were obtained for a 3–5 s exposure at 10 Hz, using a dye concentration of 10% by weight, and 12 n pulses at 650 mJ/cm². Nearly 0.5 m/pulse is removed at this fluence, which exceeds the threshold fluence of 600 mJ/cm² by only 50 mJ/cm². The measured 532 nm absorption coefficient of the 10% dye-doped polyurethane was 4×10⁴ cm^–1. Lower fluences and/or dye concentrations produced inadequate stripping, while shorter duration pulses caused unacceptable melting of the thin gold layer which covered the copper core of the wire. Pulse-by-pulse photographs of the stripping action clearly show melting of the dye/polymer insulation, and thermal rollback of the insulation near the stripped end. Regardless, excellent edge definition is obtained by this method.     

Infrared absorption of silane,ammonia, acetylene and diborane in the range of the CO2 laser emission lines: Measurements and modelling

Absorption spectra of the gases SiH₄, NH₃, C₂H₂ and of SiH₄/Ar and SiH₄/B₂H₆ mixtures have been measured in the spectral range of the CO₂ laser from 9.2 to 10.8 µm. In agreement with literature, silane shows the highest absorption (absorption coefficient = 3.3 × 10^–2 Pa^–1 m^–1). The deviation of the measured absorption behaviour of silane from literature, as far as the pressure dependence is concerned, can be explained by the enhanced spectral energy density in our experiment. This is confirmed by a rate-equation model involving the basic mechanisms of V-V and V-T energy transfer between vibrationally excited silane molecules. In contrast to silane, the absorption coefficient of NH₃ at the 10P(20) laser line is 4.5 × 10^–4 Pa^–1 m^–1 atp = 20 kPa and has its maximum of 4.5 × 10^–3 Pa^–1 m^–1 at the 10R(6) laser line. For C₂H₂ and B₂H₆, is even less ( 2.1 Ò 10^–5 Pa^–1 m^–1 for C₂H₂).     

Absorption bistability in evaporated ZnSex thin films

Intrinsic absorption bistability in ZnSe_1.36 thin films, produced by thermal evaporation is observed. The influence of laser pulse duration and resonator mirror reflectivity is studied experimentally and theoretically. Compared to ZnSe elements prepared by other methods, the evaporated films allow a longer operation wavelength of 514 nm, a low threshold power of 10 mW and a smaller element size below 10 m³.     

Photoelectric properties of Pb1−x−y Sn x Ge y Te:In epitaxial films

Pb_1–x–y Sn _x Ge _y Te:In epitaxial films are examined in a wide temperature interval and at various background fluxes. These films have high sensitivity to infrared radiation in the spectral range <20m. The lifetime depends exponentially on temperature and varies from several seconds at T=10 K to 10^–2 s at T=20 K. The two-electron model of Jahn-Teller centers is proposed to explain the results. Multielement photoresistors based on these films are fabricated and D*=1.7×10¹³ cm Hz^1/2 W^–1 at T=25 K is achieved. Noise of the photoresistors is independent of background flux when it varies from 10¹² cm^–2 s^–1 to 10¹⁸ cm^–2 s^–1. As compared with Si:Ga and Ge:Hg photoresistors, the responsitivity is several orders larger at the operating temperature 25–30 K.     

Miniaturization of a thalliumiodide photodissociation laser

We report on the operation of a thallium photodissociation laser with an active medium in the form of a thin layer on a quartz wall. Laser emission has been obtained with layer thicknesses below 100 m. This gas laser seems to be feasible with an active volume as small as 10^–1 to 10^–2 mm³.     

Transient absorption and laser output of YAG : Nd

YAG : Nd grown under 98% Ar 2% H₂ protective atmosphere free of nitrogen or hydrocarbons showed after UV irradiation broad absorption peaked at 1·9×10⁴ cm^–1 which disappeared relatively slowly at room temperature. It was more intensive in oxygen treated samples than in those annealed in hydrogsn. Transient absorption suppresses laser output by the increase of absorption at 0·94×10⁴ cm^–1 (1064 nm) and, particularly in CW mode, by the anomalous rod deformation. YAG : Nd containing Fe ions (2·10^–4 wt%) showed no transient absorption.