光电流飞行时间法研究聚己基噻吩(P3HT)中载流子的输运机制

采取光电流的飞行时间法测量多个通过P3HT(poly(3-hexylthiophene))氯仿溶液用滴涂法制备的有机薄膜所构成的ITO/P3HT/Al器件中的载流子渡越时间,记录到具有较大数据范围的迁移率分布,将全部数据在P-F图(Poole-Frenkel plot)上分析得到迁移率规律地分为三组,可以判断P3HT中存在有三种或更多的不同载流子输运机制。     

p-Hg1-xCdxTe材料中轻空穴的性质研究

通过变磁场霍尔测量方法,采用由迁移率谱和多载流子拟合过程相结合的混合电导法,在12-300K范围内,获得了两块分子束外延(MBE)生长的p-Hg_1-xCd_xTe(x=0224)样品中的轻、重空穴以及体电子、表面电子的浓度和迁移率.此外,在实验中,还直接观察到了轻空穴对电导张量分量的贡献.实验值不仅具有明确的物理意义,而且有助于红外探测器模型的建立. 关键词：     

掺杂吡唑喹啉衍生物的聚乙烯基咔唑薄膜载流子传输性能的研究

对比研究了吡唑喹啉衍生物(PAQ5)的掺杂对聚N-乙烯基咔唑(PVK)聚合物薄膜载流子传输性能的影响.分析薄膜宏观的电流密度-电场关系发现:电场F在106~10~7 V·cm-1范围时,纯PVK薄膜中电流密度J∝F2.1,而在掺杂了PAQ5(4.8wt%)的PVK薄膜中J∝F2.9.掺杂薄膜导电能力的提高,除了有空穴从阳极注入PVK形成的空间电荷限制电流之外,也有PAQ5使电子从阴极注入和传输形成的传输电流.分析薄膜用飞行时间法测得的瞬态光电流谱可得:在1×105~2×10~5 V·cm-1的低场下,纯PVK薄膜中传导电流的主要是空穴载流子,其迁移率在7.6×10~(-5) cm~2·V~(-1)·s~(-1),而电子迁移的信息却很微弱,PAQ5掺杂浓度为2wt%的PVK薄膜载流子传输性能没有大的变化.在PAQ5掺杂浓度为5wt%的PVK薄膜中,空穴的迁移率为6.0×10-5 cm~2·V~(-1)·s~(-1),电子的迁移率为7.9×10-6cm~2·V~(-1)·s~(-1).掺入的PAQ5建立的电子传输通道使掺杂薄膜载流子的传输性能得到显著提高.     

迁移率对单层有机发光器件中电场与载流子分布的影响

有机发光器件的宏观特性与有机层中的电场和载流子浓度分布密切相关。建立的有机电致发光器件模型是由两个金属电极中间夹一层有机发光薄膜材料组成的单层器件,金属与有机发光层之间为欧姆接触。模型以载流子运动的扩散-漂移理论为基础,利用数值方法研究了有机发光层中双极载流子注入时的电势、电场、载流子浓度和复合密度分布。分析结果表明:当两种载流子的迁移率相同时,电场强度、载流子浓度、复合密度的分布呈对称形式。而当电子和空穴的迁移率μn和μp相差比较大时,高迁移率的载流子不仅仅分布在注入端附近而且还有一小部分能够传输到另一端,而低迁移率的载流子只分布在其注入端附近;当μn、μp的大小相差不大时,载流子传输情况就介于两者之间。当μn/μp的比值变化时,电场强度的极大值向载流子迁移率小的注入端偏移。     

迁移率对单层有机发光器件中复合率分布的影响

以载流子运动的扩散-漂移理论为基础,利用数值方法研究了有机发光层中双极载流子注入时的电势、电场、载流子浓度和复合率分布.结果表明:当两种载流子的迁移率相同实现平衡注入,并且当空穴和电子的复合为Langevin型时,复合率的分布曲线相当理想,参与复合的空穴和电子总量远大于其他情况,由此器件的发光性能也得到更大的优化.     

载流子迁移率对有机太阳能电池性能影响的模拟研究

通过器件模拟的方法研究了载流子迁移率对有机太阳能电池性能的影响。研究发现载流子迁移率同时影响光生电子-空穴对的解离和载流子的输运过程,电子和空穴的迁移率都有一个最佳值。大于最佳值会导致短路电流的微小上升和开路电压的大幅下降;小于最佳值会降低光生电子-空穴对的解离效率,进而使短路电流和填充因子明显下降。     

边修饰GeS2纳米带的电子特性及调控效应

GeS₂单层已成功制备,为了进一步扩展其应用范围以及发现新的物理特性,我们构建扶手椅型GeS₂纳米带(AGeS₂NR)模型,并采用不同浓度的H或O原子进行边缘修饰,且对其结构稳定性、电子特性、载流子迁移率以及物理场调控效应进行深入研究.研究表明边修饰纳米带具有良好的能量与热稳定性.裸边纳米带是无磁半导体,而边修饰能改变AGeS₂NR的带隙,使其成为宽带隙或窄带隙半导体,或金属,这与边缘态消除或部分消除或产生杂化能带有关,所以边缘修饰调控扩展了纳米带在电子器件及光学器件领域的应用范围.此外,计算发现载流子迁移率对边缘修饰十分敏感,可以调节纳米带载流子迁移率(电子、空穴)的差异达到1个数量级,同时产生载流子极化达到1个数量级.研究还表明半导体性纳米带在较大的应变范围内具有保持电子相不变的鲁棒性,对于保持相关器件电子输运的稳定性是有益的.绝大部分半导体性纳米带在较高的外电场作用下,都具有保持半导体特性不变的稳定性,但带隙随电场增大而明显变小.总之,本研究为理解GeS₂纳米带特性并研发...     

基于聚合物非富勒烯体系PM6:Y6的钙钛矿/有机集成太阳电池光伏性能优化

通过工艺创新和薄膜优化技术成功制备基于CH₃NH₃PbI₃/PM6:Y6(BTP-4F)的钙钛矿/有机集成太阳电池(IPOSCs).通过添加剂1-8二碘辛烷DIO的调控和热退火处理,极大优化CH3NH3PbI3/PM6:Y6混合薄膜质量和获得层间欧姆接触.与此同时,近红外区有机层的空穴和电子迁移率为8.3×10^–3 cm²/(V·s)和8.8×10^–3 cm²/(V·s),可以和可见区钙钛矿层的空穴和电子迁移率相匹配,实现在微观通路上达到载流子运输平衡,导致器件具有高短路电流密度Jsc和高填充因子FF.另外,通过优化聚合物非富勒烯体系PM6:Y6质量比例混合成膜,使得薄膜中的非辐射复合位点密度和载流子复合明显减少,使得电子和空穴的提取和传输更加高效,能够提供更大的驱动力来改善载流子传输,同时形成更宽的耗尽区来抑制载流子复合以提高器件的开路电压Voc.优化的集成太阳能电池的短路电流密度提升到25.88 A/cm2,开路电压Voc增加到1...     

F16CuPc作为阳极缓冲层对有机太阳能电池性能的显著改善

采用F₁₆CuPc作为有机太阳能电池的阳极缓冲层可使器件的性能得到显著提高。F₁₆CuPc的引入,一方面可以实现CuPc分子的定向生长,从而改善CuPc薄膜的结晶度,提高其空穴迁移率;另一方面在F₁₆CuPc/CuPc界面处可形成偶极层,改善空穴的输出效率。以上两个作用有效提高了器件的载流子收集效率,降低了器件的串联电阻和光生载流子复合几率,从而提高了器件的短路电流和填充因子。同时,F₁₆CuPc的引入使器件的内建电场增大,提高了器件的开路电压。     

载流子迁移率对单层有机发光二极管复合效率的影响

建立了在单层有机发光二极管中电场强度不太大(E≤104Vcm)的情况下,载流子注入、传输和复合的理论模型.通过求解非线性Painleve方程得出了电场强度随坐标变化的解析函数关系式以及电流密度随电压变化关系,给出了电流密度以及器件的复合效率在不同的载流子迁移率情况下随电压变化关系图像.结果表明,复合效率受载流子迁移率影响较大,在器件中多数载流子应具有较低的迁移率,而少数载流子应具有较高的迁移率,这样有利于载流子的注入和传输,从而可提高发光效率.并且得出当空穴迁移率大于电子迁移率时,复合区域偏向阴极,反之亦 关键词： 单层有机发光二极管 复合效率 迁移率     

Transient processes in two-barrier nanostructures

An analytic solution to the problem on transient processes in a two-barrier nanostructure is found. Explicit expressions are obtained for a transient current produced by an instantly applied weak electric field. The current relaxes to a stationary state for a time ?/Γ (Γ is the width of a resonance level), oscillating at a frequency of ξ = ? ? ? _R , where ? is the energy of electrons coming from an emitter and ? _R is the resonance level energy. The transient current for interacting electrons is found in the quasi-classical approximation. It is shown that interaction between electrons can drastically change the transient current, especially in the presence of hysteresis of the current-voltage characteristic (CVC). Near extreme CVC values in the region of negative differential conductivity, the oscillation frequency tends to zero and becomes imaginary, compensating the decay. Thus, the transient current relaxes with very large times without oscillations. In contrast, in the case of positive differential conductivity, the oscillation frequency becomes very high, while the relaxation time remains the same, 1/Γ.     

Leitfähigkeitsuntersuchungen an Anthrazen-Kristallen bei Anregung mit Protonenimpulsen

Transient currents in anthracene crystals were measured under bombardment by pulses of 700 keV protons. Electron-hole-pairs are generated by an intrinsic process, the yield varying linearly with the intensity of the bombarding beam. The average energy for pair production is found to be 10⁴ eV. The temperature dependence of the carrier yield can be characterized by an activation energy of 0.07 eV. The results are discussed with regard to different models of the generation process. Drift mobilities of 0.46 cm²/Vsec for electrons and 0.88 cm²/Vsec for holes are determined in good agreement with other authors. A reduction of the current pulse height with the number of bombarding pulses is observed and explained in analogy to the known deterioration of luminescence under ion bombardment. Thereby the higher deterioration constant for the conductivity can be understood.     

Conductivity of 2D multi-component electron gas partially-quantized by magnetic field

The 2D semimetal consisting of heavy holes and light electrons is studied. The consideration is based on the assumption that electrons are quantized by magnetic field while holes remain classical. We assume also that the interaction between components is weak and the conversion between components is absent. The kinetic equation for holes colliding with quantized electrons is utilized. It has been stated that the inter-component friction and corresponding correction to the dissipative conductivity σ _xx do not vanish at zero temperature due to degeneracy of the Landau levels. This correction arises when the Fermi level crosses the Landau level. The statement will keep in force until the degeneracy remains. The limits of kinetic equation applicability were found. We also study the situation of kinetic memory when particles repeatedly return to their meeting points.     

Radiation-stimulated pulse conductivity of CsBr crystals

The radiation-stimulated pulse conductivity of CsBr crystals is investigated upon picosecond excitation with electron beams (0.2 MeV, 50 ps, 0.1–10 kA/cm²). The time resolution of the measuring technique is ～150 ps. It is shown that the lifetime of conduction band electrons is limited by their bimolecular recombination with autolocalized holes (V _k centers). A delay in the conduction current pulse build-up is revealed. This effect is explained within the proposed model, according to which the Auger recombination of valence band electrons and holes of the upper core band substantially contributes to the generation of conduction band electrons.     

Two-band conductivity of ZrO<Subscript>2</Subscript> synthesized by molecular beam epitaxy

Using experiments on the injection of minority carriers from n-and p-type silicon, the contribution of electrons and holes to the conductivity of ZrO₂ in the Si/ZrO₂/Al structure is determined. It is found that electrons and holes make a contribution to the conductivity of ZrO₂, so that ZrO₂ exhibits two-band conductivity.     

Electrochemical studies on lead iodide

The total d.c. electrical conductivity of undoped PbI₂ was measured as a function of iodine potential in the region 150–300°C to determine the nature of charge carriers in PbI₂. Results indicate that PbI₂ is an ionic conductor with electron holes as the minority carriers in this temperature range. Electrical polarization experiments were also performed to determine the electron hole conductivity and concentrations, mobilities and chemical diffusion coefficients of electron holes in undoped PbI₂ between 150 and 300°C.     

Electrochemical transient investigations on the diffusion of minority charge carriers in YSZ doped by transition metal oxides

The voltage relaxation of galvanic cells with zirconia based electrolytes polarised between an inert Pt electrode and a Pt/air electrode is analysed to obtain the diffusion coefficients of holes and electrons. The hole diffusion coefficient can be reduced by replacing zirconium with guest ions of different size, e.g. Nb⁵⁺ and Ti⁴⁺. The TZP phase with 3 mol% Y₂O₃ of dopant has a higher hole diffusion coefficient than the CYZ phase doped with 8 mol% Y₂O₃. 1 and 3 mol% p-type MnO_1.5 doping increases the conductivity of holes in CYZ to a large extend, but does not influence the diffusivity. This indicates that the doping increases the hole conductivity through an increased concentration of holes. In the case of 10 and 15 mol% MnO_1.5 doped Z3Y, the electronic conductivity is dominant. The chemical diffusion coefficients which are related to the oxygen vacancies were determined by GITT. The results show that the chemical diffusion coefficient of oxygen vacancies is much larger than that for holes in zirconia.     

Galvanomagnetic properties of Hg1−x MnxTe1−y Sey semimagnetic semiconductors

The galvanomagnetic properties of single crystals of the semimagnetic semiconductors Hg_1−x Mn_xTe_1−y Se_y with 0.01<y<0.1 and x=0.05 and 0.14 in the temperature range 4.2–300 K are investigated. The features of the temperature dependence of the Hall coefficient R _H and the complicated behavior of R _H in a magnetic field are attributed quantitatively to the existence of three groups of current carriers, viz., electrons and two types of holes, for which the temperature dependences of the densities and mobilities are obtained. A transition from p-type to n-type conductivity is observed as the Se content is increased, and the negative magnetoresistance simultaneously gives way to positive magnetoresistance. Zh. éksp. Teor. Fiz. 112, 1809–1815 (November 1997)     

Enhanced light emission in Si-nanoclusters arrays

An array of silicon nanoclusters aimed at producing light emission upon injection of electrons and holes from external sources is studied by Monte Carlo simulations. The conditions for obtaining a significant charge accumulation in the emitting nanoclusters are investigated as a function of array geometry and applied electric fields. It is found that if a stationary state, reached for an applied field F₀, is suddenly perturbed by a field F₁≫F₀, a significant increase in electron-hole pairs population can be obtained with respect to the case of a single field of constant intensity F₁, leading to enhanced light emission when the conductivity of the array is above 6×10^-10 [ Ω cm] ^-1. The excess population thus created gets fully recombined on the time scale of milliseconds, suggesting a device that can produce enhanced light emission in the range of kilohertz.