Ti-Si-N films prepared by plasma-enhanced chemical vapor deposition

Ti-Si-N thin films were deposited on HSS substrates at 560°C using plasmaenhanced chemical vapor deposition. Feed gases used were TiCl₄, SiCl₄, N₂, and H₂. The composition of the films could be controlled well through adjustment of the mixing ratio of the chlorides in the feed gases. The Si content in the film varied in the range of O to 40 at. %. It was jbund that a small addition of Si to a TiN film improved the morphology significantlv, showing dense and glasslike structure. Also a much smootherand more homogeneous interface between thefilm and the substrate was obtained. The Ti-Si- N films containing 10–15 at. % Si showed the maximal microhardness value of about 6350 kgf/mm², much higher than that of TiN films.     

Selective chemical vapor deposition synthesis of double-wall carbon nanotubes on mesoporous silica

Double-wall carbon nanotubes (DWNTs) have been selectively synthesized over Fe/Co loaded mesoporous silica by catalytic chemical vapor deposition of alcohol. Several silica materials with desired pore diameter and morphology have been investigated for the DWNT growth. The diameter distribution and selectivity of the DWNT are found to depend on the reaction temperature, pore size, and thermal stability of the support material. A high-yield synthesis of DWNTs has been achieved at 900 degrees C over high-temperature stable mesoporous silica. The outer diameter of DWNTs is found to be in the range of 1.5-5.4 nm with a "d" spacing of 0.38 +/- 0.02 nm between inner and outer layers, which is much larger than those of multiwall carbon nanotubes.     

New molecular compound precursor for aluminum chemical vapor deposition

A new type of precursor for aluminum chemical vapor deposition (Al‐CVD) has been developed by mixing dimethylaluminum hydride (DMAH) and trimethylaluminum (TMA). The new precursor has proven itself to be effective for Al‐CVD, where a good selectivity between the Si and the SiO₂ mask, a 3.0 μΩ cm resistivity and a pure Al film with low C and O contamination levels (under 100 ppm) were achieved. Quadrupole mass and infrared absorption analysis have shown that the precursor contains a new molecular compound, consisting of a DMAH monomer and a TMA monomer. The mixture has lower viscosity than DMAH and can be easily bubbled for a stable precursor vapor supply. Copyright © 2000 John Wiley & Sons, Ltd.     

Preferential growth of single-walled carbon nanotubes on silica spheres by chemical vapor deposition

The preferential growth of single-walled carbon nanotubes (SWNTs) on silica spheres with various diameters was realized for the first time by chemical vapor deposition (CVD) of methane. SWNTs tend to wrap the silica spheres to form a new superstructure of uniform SWNT nanoclaws when the diameters of the silica spheres are larger than 400 nm. The SWNTs obtained on silica spheres have highly graphitic tubular walls as characterized by Raman spectroscopy and HRTEM. This is a new method to obtain tunable uniform elastic deformation of SWNTs, which may act as the model for the study about the effect of delocalized bending on the properties of SWNTs. In addition, the combination of SWNTs with monodispersed silica spheres could conveniently integrate SWNTs into photonic crystals.     

Enhanced stability of Cu-BTC MOF via perfluorohexane plasma-enhanced chemical vapor deposition

Metal organic frameworks (MOFs) are a leading class of porous materials for a wide variety of applications, but many of them have been shown to be unstable toward water. Cu-BTC (1,3,5 benzenetricarboxylic acid, BTC) was treated with a plasma-enhanced chemical vapor deposition (PECVD) of perfluorohexane creating a hydrophobic form of Cu-BTC. It was found that the treated Cu-BTC could withstand high humidity and even submersion in water much better than unperturbed Cu-BTC. Through Monte Carlo simulations it was found that perfluorohexane sites itself in such a way within Cu-BTC as to prevent the formation of water clusters, hence preventing the decomposition of Cu-BTC by water. This PECVD of perfluorohexane could be exploited to widen the scope of practical applications of Cu-BTC and other MOFs.     

Metallic single-crystal CoSi nanowires via chemical vapor deposition of single-source precursor

We report the synthesis, structural characterization, and electrical transport properties of free-standing single-crystal CoSi nanowires synthesized via a single-source precursor route. Nanowires with diameters of 10-150 nm and lengths of greater than 10 mum were synthesized through the chemical vapor deposition of Co(SiCl(3))(CO)(4) onto silicon substrates that were covered with 1-2 nm thick SiO(2). Transmission electron microscopy confirms the single-crystal structure of the cubic CoSi. X-ray absorption and emission spectroscopy confirm the chemical identity and show the expected metallic nature of CoSi, which is further verified by room-temperature and low-temperature electrical transport measurements of nanowire devices. The average resistivity of CoSi nanowires is found to be about 510 muOmega cm. Our general and rational nanowire synthesis approach will lead to a broad class of silicide nanowires, including those metallic materials that serve as high-quality building blocks for nanoelectronics and magnetic semiconducting Fe(1-x)Co(x)Si suitable for silicon-based spintronics.     

Synthesis and characterization of silicon nanowires on mesophase carbon microbead substrates by chemical vapor deposition

Silicon nanowires (SiNWs) have been fabricated by chemical vapor deposition at ambient pressure using SiCl(4) as a silicon source and mesophase carbon microbead powder as a substrate without any templates and/or metal catalysts. The SiNWs have a crystalline core with a very thin amorphous SiO(x) sheath. The obtained SiNWs are homogeneous with average diameters below 50 nm and lengths up to micrometers. Temperature and time effects on the growth of SiNWs were systematically studied. Higher reaction temperatures and longer reaction times resulted in larger diameters and higher yields of SiNWs. SiNWs with a better crystallinity can be obtained at higher temperatures and longer reaction times. The obtained SiNWs were characterized by field-emission scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and transmission electron microscopy.     

Photoinitiated chemical vapor deposition of polymeric thin films using a volatile photoinitiator

Photoinitiated chemical vapor deposition (piCVD) is an evolutionary CVD technique for depositing polymeric thin films in one step without using any solvents. The technique requires no pre- or post-treatment and uses a volatile photoinitiator to initiate free-radical polymerization of gaseous monomers under UV irradiation. Glycidyl methacrylate (GMA) was used as a test monomer for its ability to undergo free-radical polymerization, and 2,2'-azobis(2-methylpropane) (ABMP) was used as the photoinitiator, as it is known to produce radicals when excited by photons. GMA and ABMP vapors were fed into a vacuum chamber in which film growth was observed on a substrate exposed to UV irradiation. The resulting poly(glycidyl methacrylate) (PGMA) thin films were comprised of linear chains and had high structural resemblance to conventionally polymerized PGMA, as shown by the high solubility in tetrahydrofuran and the infrared and X-ray photoelectron spectroscopy measurements. The introduction of ABMP into the vacuum chamber significantly increased growth rates. The maximum growth rate achieved was approximately 140 nm/min and represents a 7-fold enhancement over the case without ABMP. The molecular weight was found to increase with increasing monomer-to-initiator (M/I) feed ratio, and the polydispersity indexes (PDIs) of the samples were between 1.8 and 2.2, lower than the values obtained in conventional batch polymerization but in agreement with the theoretical expressions developed for low-conversion solution-phase polymerization, which are applicable to continuous processes such as piCVD. Molecular-weight distributions can be narrowed by filtering out wavelengths shorter than 300 nm, which induce branching and/or cross-linking. The strong dependence of the molecular weight on the M/I ratio, the rate enhancement due to the use of a radical photoinitiator, the good agreement between the experimental, and the theoretical PDIs provide evidence of a free-radical mechanism in piCVD. The clear films obtained in this work had number-average molecular weights between 12 500 and 97 000 g/mol. The similarities in growth conditions, growth rates, and molecular weights between the initiated CVD, a previously reported thermal process able to synthesize a wide range of polymers, and the piCVD of PGMA suggest that piCVD can also be used to produce those polymers and potentially others whose monomers undergo free-radical mechanisms. This paper serves as an introduction to the technique by demonstrating piCVD's ability in synthesizing high-molecular-weight PGMA thin films with narrow molecular-weight distributions from vapors of GMA and ABMP in a single, dry step under UV irradiation.     

Thermal stability of cubic boron nitride films deposited by chemical vapor deposition

Thermal stability of well-crystallized cubic boron nitride (cBN) films grown by chemical vapor deposition has been investigated by cathodoluminescence (CL), Raman spectroscopy, and scanning electron microscopy (SEM) with the cBN films annealed at various temperatures up to 1,300 degrees C. The crystallinity of the cBN films further improves, as indicated by a reduction of the relevant Raman line width, when the annealing temperature exceeds 1,100 degrees C. Structural damage or amorphization was observed on the grain boundaries of the cBN crystals when annealing temperature reaches 1,300 degrees C. The CL spectra are found to be unchanged up to 1,100 degrees C after annealing at 500 degrees C, showing the stability of the cBN films in electronic properties up to this temperature. New features were observed in the CL spectra when annealing temperature reaches 1,200-1,300 degrees C.     

Synthesis of titanium(IV) guanidinate complexes and the formation of titanium carbonitride via low-pressure chemical vapor deposition

The mono(guanidinato) complex [Ti(NMe2)2Cl{i-PrNC[N(SiMe3)2]N-i-Pr}] (1) was prepared by reaction of [Ti(NMe2)2Cl2] with 1 or 2 equiv of the lithium guanidinate salt [Li{i-PrNC[N(SiMe3)2]N-i-Pr}]. Compound 1 has been characterized by X-ray crystallography. Treatment of TiCl4 with 2 equiv of [Li{i-PrNC[N(SiMe3)2]N-i-Pr}] resulted in the formation of dark red crystals. X-ray crystallography showed that these crystals consist of a 70:30 mixture of two bis(guanidinato) complexes, namely, [TiCl2{i-PrNC[N(SiMe3)2]N-i-Pr}{i-PrNC(N=CMe2)N-i-Pr}] (2) and [TiCl2{i-PrNC[N(SiMe3)2]N-i-Pr}{i-PrNC[N(H)-i-Pr]N-i-Pr}] (3). Both compounds 2 and 3 possess a transformed guanidinate ligand. Low-pressure chemical vapor deposition of either compound 1 or [TiCl2{i-PrNC(NMe2)N-i-Pr}] (4) at 600 degrees C results in thin films of titanium carbonitride.     

AFM investigation of silicon substrates for chemical vapour deposition of diamond films

AFM has been used to study surface modifications on silicon (100) substrates for CVD diamond deposition during bias pretreatment in a hot-filament reactor under various conditions. Both topographical images, force-distance measurements and chemical etching with HF have been implemented to obtain information on the processes involved. The results show, that the observed roughening, which strongly depends on the gas phase composition, is caused by chemical etching of the surface dominated by removal of elemental silicon via formation of silicon hydride.     

Crystalline orientation of the InN films prepared by atmospheric pressure halide chemical vapor deposition

The structural analysis of the hexagonal InN film prepared on a Si(100) substrate by the AP-HCVD technique using InCl₃ and NH₃ as starting materials were carried out by the X-ray pole figure analysis. The deposited films consist of the hexagonal InN pillar crystals. It was found that the pillar crystals, which have random rotation around the 100 axis, were grown at an angle of 70–90° to the substrate.     

Influence of the catalyst type on the growth of carbon nanotubes via methane chemical vapor deposition

The preparation of the catalyst is one of the key parameters which governs the quality of carbon nanotubes (CNTs) grown by catalyzed chemical vapor deposition (CVD). We investigated the influence of three different procedures of catalyst preparation on the type and diameter of CNTs formed under identical growth conditions via methane CVD. In the first one, chemically synthesized colloidal iron oxide or iron molybdenum alloy nanoparticles were used, which were homogeneously deposited on silicon substrates by spin coating to prevent them from coalescence under CVD growth conditions. The obtained multiwall CNTs (MWNTs) exhibited diameters corresponding to the catalyst particle size, whereas no formation of single-wall CNTs (SWNTs) was observed. In the second method, commercial porous alumina nanoparticles were used in association with iron and molybdenum salts and the Fe/Mo catalyst was formed in situ. We determined that the alumina concentration significantly influenced the morphology of the catalyst and that below a critical value of the range of 1 g/L no CNTs were formed. While yielding nearly defect-free SWNTs, their diameter could not be controlled using this procedure, resulting in a large distribution of tube sizes. In a third, new preparation method, associating alumina and iron-based nanoparticles, SWNTs of a different size and narrower diameter distribution as compared to the second method were obtained. Our results are evidence of the essential role of alumina particles in the formation of SWNTs, and the newly developed method opens up a way to the synthesis of diameter-controlled SWNTs via catalyzed CVD.     

Plasma chemical vapor deposition of TiN

Experiments indicate that the temperature in chemical vapor deposition (CVD) of TiN can be decreased from about 1000°C in conventional CVD to about 500°C by the application of a D.C. nonequilibrium plasma. The hardness of the TiN film is greater than 2000 kg/mm² (Vickers). The effect of pressure, ratio of gas mixture, and discharge parameters on the film deposition rate, its hardness, and microstructures has been studied.     

Microstructure and composition of silicon carbide films deposited on carbon fibers by chemical vapor deposition

The microstructure and the composition of CVD silicon carbide films used as fiber coatings in composite materials were investigated by photoelectron spectroscopy and transmission electron microscopy. The films with a uniform thickness of 50 nm consisted of small SiC grains with a mean diameter of 15 nm and showed a stripe contrast in bright field images. Large grains with diameters in the dimension of the film thickness were used for imaging the lattice structure by high-resolution electron microscopy. The results are discussed as a polytype of cubic lamellae of a few nanometers and intermediate random stacking sequences of hexagonal structure. Received: 30 July 1997 / Accepted: 16 December 1997     

Novel titanium compounds for metal-organic chemical vapor deposition of titanium dioxide films with an ultrahigh deposition rate

A new titanium diolate compound Ti(mpd)(mdop)(2) (1) containing a beta-ketoester and a dimeric derivative [Ti(mpd)(mdop)(mu-OMe)](2) [2; mpd = 2-methyl-2,4-pentanediolate, mdop = (CH(3))(3)CC(O)C(-)HCOOCH(3)] have been synthesized and characterized by FT-IR, (1)H NMR, (13)C NMR, mass spectroscopy, and elemental analysis. Complex 2 was further characterized by X-ray structural analysis. Both 1 and 2 are fairly stable in air and in solvents such as tetrahydrofuran and toluene. They are also thermally stable and do not leave any residue during flash evaporation at around 280 degrees C. The new titanium complexes were used as precursors for the deposition of TiO(2) thin films by liquid-source metal-organic chemical vapor deposition. Compared with commercial Ti precursors, such as Ti(mpd)(tmhd)(2) (tmhd = 2,2,6,6-tetramethylheptanedionate) and Ti(OPr(i)())(2)(tmhd)(2), the new titanium complexes demonstrated a much higher deposition rate of TiO(2) film growth (3-6 times) at 400-475 degrees C. The deposited TiO(2) film from complex 2 was found to be in a crystalline anatase phase with a smooth surface morphology and low carbon content. Crystal data for 2: 233(2) K, a = 12.570(4) A, b = 13.817(4) A, c = 11.157(3) A, beta = 101.059(5) degrees, monoclinic, space group P2(1)/c, Z = 2.