ZnO纳米带外延树枝状锯齿形缺口结构的制备及其发光特性

应用气固生长方式在没有催化剂的情况下合成出一种新奇的ZnO纳米结构．通过透射电子显微镜分析，发现这种ZnO纳米带外延晶枝直径约20 nm，在[0001]方向有着良好的外延生长取向．提出了一个模型来解释这种树枝状锯齿结构的生长．室温下光致发光测量表明这种ZnO纳米结构在382、491 nm处有一个紫外发光峰和绿光发光峰．     

2.0 μm 波段Sb基多量子阱材料的制备

采用分子束外延外延生长技术,优化InGaAsSb/AlGaAsSb多量子阱点材料的生长速率、生长温度和束流比等生长参数,获得了高质量的多量子阱材料。室温光荧光谱表明,材料的发光波长为2.0 m左右。该结果表明,通过优化生长条件和结构参数制备的量子阱材料,可以获得良好的结构质量和光学特性。所制备的器件室温条件下输出功率22 mW,阈值电流300 mA。     

一维氧化锌纳米结构生长及器件制备研究进展

介绍了一维氧化锌(ZnO)纳米结构的形态(纳米线和纳米带等)及其特点,阐述了该结构生长及器件制备的方法,例如水热法和化学气相沉积法等. 概述了该结构在发光二极管和纳米发电机等方面的应用进展. 最后,对一维ZnO纳米结构的未来发展趋势进行了展望,并在新方法和新工艺等方面提出了一些建议. 关键词： ZnO 一维纳米结构 制备方法 光电子器件     

氧化锌及纳米氧化锌研究进展

ZnO是一种重要的直接宽带隙半导体,室温下禁带宽度为3.37eV,激子束缚能为60meV,对于开发蓝绿、蓝光、紫外等多种发光器件有巨大潜力.纳米ZnO表现出与体材料明显不同的电学、磁学、光学、化学等性质,是目前纳米材料的研究热点之一.本文介绍了ZnO和纳米ZnO的一些基本性质,综述了近年来纳米ZnO的合成以及应用等方面研究的一些进展.     

GaN基纳米阵列LED器件制备及发光特性

为了降低GaN材料中因应变诱导的量子斯托克斯效应,增加器件有源区内的电子-空穴波函数在实空间的交叠从而提高GaN基LEDs的发光效率,采用紫外软压印技术制备了均匀的周期性纳米柱阵列结构,结合常规LED器件微加工技术获得了In GaN/GaN基蓝光与绿光纳米阵列LED器件并对其进行了表征分析。结果表明:纳米柱阵列LED器件具有均匀的发光和稳定的光电性能。纳米结构不仅有效缓解了量子阱中的应力积累(弛豫度~70%),提高了器件的辐射复合几率和出光效率,同时结合纳米柱侧壁的化学钝化处理进一步降低了器件有源区的缺陷密度,显著降低了LED器件的漏电流(~10-7),最终提高了器件的发光效率。     

MgZnO薄膜及其量子阱和超晶格的发光特性

MgO和ZnO形成合金Mg_xZn_1-xO的带隙可以在3.3～7.9eV之间变化,在制备紫外波段光电器件方面有着广阔的应用前景.由ZnO和MgZnO交替沉积而成的ZnO/Mg_xZn_1-xO量子阱和超晶格在激光器、光探测器和其他光电器件方面也有潜在的应用价值.回顾最近几年对MgZnO薄膜材料发光特性的研究进展,介绍在不同衬底上用不同方法制备MgZnO合金薄膜的制备技术、发光特性以及发光特性与薄膜中Mg含量的关系;综述近年来在ZnO/Mg_xZn_1-xO超晶格、量子阱研究上的成果,特别介绍了ZnO/Mg_xZn_1-xO对超晶格、量子阱的发光特性、发光机理以及发光特性与势垒层镁含量、器件温度的关系.     

氧化锌纳米颗粒薄膜的近紫外电致发光特性研究

利用溶胶-凝胶法(sol-gel method)制备了ZnO纳米颗粒薄膜(ZnO nanoparticle film),并以此为发光层制备了结构为ITO/ZnO nanoparticle/MEH-PPV/LiF/Al的电致发光器件.通过调整器件发光层厚度,对器件的发光光谱和电学特性进行测试研究,发现该器件在一定的直流电压下可以得到以ZnO近紫外(中心波长390 nm)发光为主的电致发光光谱,显示出较好的ZnO近紫外电致发光特性.对该器件的发光机理进行了一定的研究,认为该器件的发光是基于载流子隧穿.     

ZnO Nanobelts and Hollow Microspheres Grown on Cu Foil

采用低温热蒸发法在铜箔衬底上制备了大量ZnO纳米带、空心微米球和“海胆”状球．采用XRD、激光拉曼光谱仪、SEM和荧光光谱仪分别对ZnO纳米结构的微结构、形貌和光致发光性质进行研究．分析表明,纳米带的宽度大约为500 nm且长度超过10μm,而空心微米球的直径为5～10μm;ZnO纳米结构的发光主要是较强的蓝绿缺陷态发光,以及弱的紫外带隙态发光．铜衬底上ZnO纳米结构的制备使得ZnO纳米结构和导电衬底之间具有良好黏着性和电接触性．     

一种新的制备ZnO纳米粒子的方法--阴极电沉积法

用阴极电沉积法制备高质量ZnO纳米薄膜，电沉积采用含有不同浓度的ZnCl2的非水二甲基亚砜溶液做电解液，室温下恒流沉积，得到纳米ZnO薄膜。研究了ZnCl2浓度对薄膜结构和光学性质的影响。沉积薄膜的ZnO粒径尺寸分别为9．8，10．4，14．5nm。随着ZnCl2浓度的增加而增大。薄膜的可见光致发光谱以紫外的自由激子发射为主。研究表明：以浓度为0.03mol/L的ZnCl2电解液制备的ZnO薄膜光学性质最好。     

高Al组分AlGaN多量子阱结构材料发光机制探讨

紫外LED的发光功率和效率还远不能令人们满意,波长短于300 nm的深紫外LED的发光效率普遍较低。厘清高Al组分Al Ga N多量子阱结构的发光机制将有利于探索改善深紫外LED的发光效率的新途径、新方法。为此,本文通过金属有机气相外延技术外延生长了表面平整、界面清晰可辨且陡峭的高Al组分AlGa N多量子阱结构材料,并对其进行变温光致发光谱测试,结合数值计算,深入探讨了Al Ga N量子阱的发光机制。研究表明,量子阱中具有很强的局域化效应,其发光和局域激子的跳跃息息相关,而发光的猝灭则与局域激子的解局域以及位错引起的非辐射复合有关。     

Fast synthesize ZnO quantum dots via ultrasonic method

Green emission ZnO quantum dots were synthesized by an ultrasonic sol–gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots.     

氧化锌量子点和碳量子点及其复合物的制备与发光性能的研究

采用溶胶凝胶方法和水热法制备了水溶性荧光氧化锌量子点(Zn O-QDs)和碳量子点(C-QDs),其量子效率分别达到38%和61%。基于所合成的Zn O-QDs和C-QDs制备了氧化锌和碳量子点复合物(Zn O/CQDs),并分别对其发光特性进行了研究。透射电镜(TEM)图像表明,所合成的Zn O-QDs和碳量子点尺寸分布在3~6 nm之间,分散均匀。光致发光光谱表明,Zn O-QDs和碳量子点的发光峰中心分别位于540 nm和450 nm,两者发光峰的最佳激发波长为370 nm和350 nm。通过调整Zn O-QDs和C-QDs的体积比,所制备的Zn O/C-QDs能够实现荧光光谱的连续可调,并产生了白色荧光。     

High quantum yield ZnO quantum dots synthesizing via an ultrasonication microreactor method

Green emission ZnO quantum dots were synthesized by an ultrasonic microreactor. Ultrasonic radiation brought bubbles through ultrasonic cavitation. These bubbles built microreactor inside the microreactor. The photoluminescence properties of ZnO quantum dots synthesized with different flow rate, ultrasonic power and temperature were discussed. Flow rate, ultrasonic power and temperature would influence the type and quantity of defects in ZnO quantum dots. The sizes of ZnO quantum dots would be controlled by those conditions as well. Flow rate affected the reaction time. With the increasing of flow rate, the sizes of ZnO quantum dots decreased and the quantum yields first increased then decreased. Ultrasonic power changed the ultrasonic cavitation intensity, which affected the reaction energy and the separation of the solution. With the increasing of ultrasonic power, sizes of ZnO quantum dots first decreased then increased, while the quantum yields kept increasing. The effect of ultrasonic temperature on the photoluminescence properties of ZnO quantum dots was influenced by the flow rate. Different flow rate related to opposite changing trend. Moreover, the quantum yields of ZnO QDs synthesized by ultrasonic microreactor could reach 64.7%, which is higher than those synthesized only under ultrasonic radiation or only by microreactor.     

Synthesis of ZnO quantum dots and their agglomeration mechanisms along with emission spectra based on ageing time and temperature

The ZnO quantum dots (QDs) were synthesized with improved chemical solution method. The size of the ZnO QDs is exceedingly uniform with a diameter of approximately 4.8 nm, which are homogeneously dispersed in ethanol. The optical absorption edge shifts from 370 nm of bulk material to 359 nm of QD materials due to the quantum size effect, while the photoluminescence peak shifts from 375 nm to 387 nm with the increase of the density of ZnO QDs. The stability of ZnO QDs was studied with different dispersion degrees at 0 ℃ and at room temperature of 25 ℃. The agglomeration mechanisms and their relationship with the emission spectra were uncovered for the first time. With the ageing of ZnO QDs, the agglomeration is aggravated and the surface defects increase, which leads to the defect emission.     

ZnO@GQDs核壳结构量子点的制备及性能研究

采用原位聚合法制备了以ZnO量子点为核、石墨烯量子点（GQDs）为壳的ZnO@ GQDs核壳结构量子点。通过TEM和HR-TEM对量子点进行形貌和结构的分析表征。结果表明,合成的ZnO@ GQDs核壳结构量子点为球形,粒径为～7 nm,且尺寸均匀。PL光谱研究表明,新型量子点的发射峰位于369 nm,发光峰窄、强度高;相对于ZnO的本征发射峰,GQDs的引入使得ZnO@GQDs核壳量子点的荧光发射峰出现蓝移、强度变高,从而使复合量子点的荧光具有较纯的色度和较高的强度,说明GQDs的引入具有协同优化效应。该量子点有望应用于LED显示器件。     

ZnO对硫硒化镉量子点玻璃发光性能的影响

以CdS、Se、Zn粉和玻璃基质为原料,采用高温熔融法制备了CdS_xSe_(1-x)量子点硅酸盐玻璃,研究了ZnO含量对CdS_xSe_(1-x)量子点发光玻璃微观结构及发光性能的影响。结果表明:ZnO对CdS_xSe_(1-x)量子点玻璃的发光性能有显著的影响,紫外-可见吸收光谱和荧光光谱分析结果说明在470 nm蓝光激发下,掺Zn O的CdS_xSe_(1-x)量子点玻璃中CdS_xSe_(1-x)量子点处于强限域区,出现了强烈的带边激子发射现象,证明量子点具有明显的量子尺寸效应。当样品中ZnO的质量分数为13%时,荧光光谱峰强最大,半峰宽最窄。     

巯基丙酸分子对CdSe核壳量子点和 ZnO纳米粒子薄膜之间电荷转移的影响

通过稳态光谱和时间分辨荧光光谱研究了巯基丙酸(MPA)分子对由量子点到ZnO纳米粒子薄膜的电荷转移过程的影响。研究发现,相对于CdSe纳米粒子薄膜样品,没有MPA分子参与作用的CdSe/ZnO薄膜样品和有MPA分子连接的CdSe/MPA/ZnO薄膜样品中都存在从CdSe量子点到ZnO纳米粒子薄膜的有效电荷分离过程,但是相对于CdSe/ZnO样品, CdSe/MPA/ZnO样品中电荷转移速率明显变小。这表明MPA分子本身它并不能促进CdSe到ZnO电荷分离过程,因此可以认为用金属氧化物薄膜直接吸附量子点吸收材料,将能获得高功率转换效率的量子点敏化太阳能电池。     

Ag/ZnO纳米结构的荧光增强效应

利用化学合成方法制备了Ag纳米线和ZnO量子点。对这两种纳米结构的表面形貌、晶体结构和光学性质分别进行了研究。结果表明：Ag纳米线和ZnO量子点均为单晶结构,平均直径分别为160 nm和5 nm左右。将Ag纳米线混入ZnO量子点可以使其紫外荧光显著增强,其中位于345 nm和383 nm 的荧光分别增强30倍和12倍。这与Ag纳米线和ZnO量子点混合体系的局域表面等离子体共振耦合吸收峰位相一致,说明该体系存在两种共振耦合模式。该研究结果为将来开发ZnO基纳米发光器件提供了一条新的途径。     

Luminescence studies and formation mechanism of symmetrically dispersed ZnO quantum dots embedded in SiO2 matrix

Surface effects significantly influence the functionality of semiconductor nanocrystals. In the current work we present synthesis of ZnO quantum dots (QD) vis-a-vis symmetrically dispersed ZnO quantum dots embedded in SiO₂ matrix and discussed their optical properties to understand the role of the surface effects. These nanomaterials were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), fourier transform infrared (FTIR), absorption (UV-visible) and photoluminescence (PL) spectroscopy. TEM studies confirm the formation of ZnO nanophosphors inside the SiO₂ matrix in highly symmetrical manner. These symmetrically dispersed ZnO@SiO₂ nanophosphors exhibited enhanced stable emission over uncoated sample and would permit the conjugation of the nanocrystals to biological entities after functionalization. Furthermore, the mechanism behind the formation of symmetrically dispersed ZnO quantum dots embedded in SiO₂ matrix was discussed in detail.     

ZnO and ZnS Nanostructures: Ultraviolet-Light Emitters,Lasers, and Sensors

ZnO and ZnS, well-known direct bandgap II–VI semiconductors, are promising materials for photonic, optical, and electronic devices. Nanostructured materials have lent a leading edge to the next generation technology due to their distinguished performance and efficiency for device fabrication. As two of the most suitable materials with size- and dimensionality-dependent functional properties, wide bandgap semiconducting ZnO and ZnS nanostructures have attracted particular attention in recent years. For example, both materials have been assembled into nanometer-scale visible-light-blind ultraviolet (UV) light sensors with high sensitivity and selectivity, in addition to other applications such as field emitters and lasers. Their high-performance characteristics are particularly due to the high surface-to-volume ratios (SVR) and rationally designed surfaces. This article provides a comprehensive review of the state-of-the-art research activities in ZnO and ZnS nanostructures, including their syntheses and potential applications, with an emphasis on one-dimensional (1D) ZnO and ZnS nanostructure-based UV light emissions, lasers, and sensors. We begin with a survey of nanostructures, fundamental properties of ZnO and ZnS, and UV radiation–based applications. This is followed by detailed discussions on the recent progress of their synthesis, UV light emissions, lasers, and sensors. Additionally, developments of ZnS/ZnO composite nanostructures, including core/shell and heterostructures, are discussed and their novel optical properties are reviewed. Finally, we conclude this review with the perspectives and outlook on the future developments in this area. This review explores the possible influences of research breakthroughs of ZnO and ZnS nanostructures on the current and future applications for UV light–based lasers and sensors.