Low temperature fabrication of vanadium oxide films for uncooled bolometric detectors

Vanadium oxide films with temperature coefficient of resistant of −2.6% K⁻¹ have been fabricated on Si₃N₄-film-coated Si substrates by ion beam sputtering in a controlled Ar/O₂ atmosphere, at a relatively low growth temperature of 200 °C. The as-deposited films show no semiconductor-to-metal phase transitions even heated up to 150 °C. X-ray diffractometry shows that the main compound of the VO_x film is a metastable phase of vanadium dioxide (VO₂(B)) and the VO₂(B) film can be transformed into VO₂ film by post-growth annealing at 450 °C in flowing Ar atmosphere.     

Characterization of high-k gate dielectric/silicon interfaces

We have shown that, for thermally evaporated Ta₂O₅ or ZrO₂ thin films on Si(1 0 0), O₂ annealing at 300–500 °C causes the formation of an interfacial silicon oxide layer as thin as 1–2 nm which can be interpreted in terms of their high permeability to oxygen. And we have demonstrated how useful the energy loss spectra of photoexcited electrons from core levels such as O 1s are to measure the energy bandgaps of very thin insulators. With the combination of measured bandgaps and valence band lineups determined for X-ray photoelectron spectroscopy valence band spectra, we have determined the energy band alignments of Ta₂O₅ and ZrO₂ with Si(1 0 0) before and after the O₂ annealing at 500 °C. In addition, we have demonstrated that total photoelectron yield spectroscopy provides us direct information to quantify the energy distributions of both the defect states in the high-k dielectrics and the dielectric/Si(1 0 0) interface states over nearly entire Si bandgap.     

Origin of cathodic degradation and new phase formation at the La0.9Sr0.1MnO3/YSZ interface

New phase formation at the La_0.9Sr_0.1MnO₃/YSZ interface and its effects on the cathodic performances were studied at 900 °C in air. The resistance caused by the interfacial product layer kept increasing with time to reach up to 40% of the total resistance after 500 h. The interfacial product was identified as La₂Zr₂O₇ by XRD measurement. The electrical conductivity of La₂Zr₂O₇ (2.4 × 10⁻⁵ S cm⁻¹ at 1000 °C), measured by AC impedance and current interruption methods, was 4 to 7 orders of magnitude smaller than those of La_0.9Sr_0.1MnO₃ electrode or YSZ electrolyte. Either the electronic conductivity or the electrochemical O₂ reduction activity of La₂Zr₂O₇ was negligible. Combining these results, a conclusion was made that the cathodic degradation comes mainly from the growth of interfacial product layer and its contribution to the cell resistance increment is ohmic in nature.     

Transport properties of SrCe0.95Y0.05O3−δ and its application for hydrogen separation

Transport properties of SrCe_0.95Y_0.05O_3−δ were studied by impedance spectroscopy and by measuring open-cell voltage (OCV) and gas permeation. Ionic transference numbers were determined by measuring the OCV of concentration cells and water vapor evolution of an O₂/H₂ fuel cell. We observed interfacial polarization on the basis of the I–V curves obtained by discharging a hydrogen concentration cell or an O₂/H₂ fuel cell. The observed high protonic conductivity (high proton and low oxide ion transference numbers) makes SrCe_0.95Y_0.05O_3−δ a potential material for hydrogen separation. From proton conductivity measurements, under a given hydrogen partial pressure difference of 4%/0.488%, the hydrogen permeation rate (of a dense membrane with 0.11 cm in thickness) was calculated to be ≈0.072 cm³ (STP) cm⁻² min⁻¹ at 800°C, whereas the permeation rate calculated from short-circuit current measurements was ≈0.023 cm³ (STP) cm⁻² min⁻¹ at 800°C. The difference between calculated and observed permeation rates is probably due to interfacial polarization.     

Solid-state electrochemical CO2 sensor by coupling lithium ion conductor (Li2CO3-Li3PO4-Asl2O3) with oxide ion-electron mixed conductor (La0.9Sr0.1MnO3)

A solid-state electrochemical cell of the type O₂(air), PtLa_0.9Sr_0.1MnO₃/Li₂CO₃(+5 mol% Li₃PO₄ + 6 mol% Al₂O₃)/Au, CO₂, O₂ was composed to determine CO₂ concentration, where Li₂CO₃, a lithium ion conductor, was used as an electrolyte, and the perovskite-type oxide (La_0.9Sr_0.1MnO₃)/O₂-electrode as a reference electrode. The electromotive force (EMF) of the cell was found to be proportional to the logarithm of CO/₂ partial pressure in CO₂/O₂/N₂ gas mixtures at temperatures between 300 and 400 °C. The EMF responded to changes of CO₂ partial pressure within 1 min at 400 °C. The sensitivity to CO₂ of this cell was not affected by coexistence of O₂, and the EMF remained constant after the first 15 days. The mechanism for sensing CO₂ is discussed.     

Growth, structure and oxidation of ordered silicon layers on nickel (001)

Thin silicon films deposited in ultra-high vacuum on Ni(001) have been studied, as a function of annealing and/or O₂ exposure, using Auger spectroscopy and low energy electron diffraction. Annealing at temperatures as low as 200 ° C causes rapid intermixing, with only about one monolayer of Si (θ ≈ 1) remaining in a disordered surface layer. Annealing at successively higher temperatures causes further intermixing and the appearance of a c(2 × 2) ordered overlayer (θ = 0.5). The rate of O chemisorption and the structure of the oxide are found to depend on the structure of the adsorbed Si layer. For the c(2 × 2) layer, O₂ exposure leads to the rapid formation of multiple Si---O bonds at all surface Si sites, as in the case of bulk Ni₃Si. This effect is less pronounced (and the saturation O coverage lower) for a surface having a somewhat higher Si coverage but in the form of a disordered layer. The results are interpreted in terms of the involvement of underlayer Ni atoms in promoting O₂ dissociation.     

Time evolution of interface roughness during thermal oxidation on Si(0 0 1)

The surface morphological change at an initial stage of thermal oxidation on Si(0 0 1) surface with O₂ was investigated as a function of oxide coverage by a real-time monitoring method of Auger electron spectroscopy (AES) combined with reflection high energy electron diffraction (RHEED). At 653 °C where oxide islands grow laterally, protrusions were observed to develop under the oxide islands as a consequence of concurrent etching of the surface. The rate of etching was measured from a periodic oscillation of RHEED half-order spot intensity I_(1/2,0) and I_(0,1/2). At 549 °C where Langmuir-type adsorption proceeds, it was observed that both I_(1/2,0) and I_(0,1/2) decrease more rapidly in comparison with an increase of oxide coverage and the intensity ratio between them decreases gradually with O₂ exposure time. These suggest that Langmuir-type adsorption occurs at sites where O₂ adsorbs randomly, leading to subdivision of the 2×1 and 1×2 domains by oxidized regions, and that Si atoms are ejected due to volume expansion in oxidation to change the ratio between 2×1 and 1×2 domains.     

Comparison of the CO and D2 oxidation reactions on Pd supported on MgO(100), MgO(110) and MgO(111)

Oxidation of D₂ and CO on oxygen pre-exposed 200 nm thick Pd films, epitaxially grown on MgO(100), MgO(110) and MgO(111), has been investigated in the temperature range 100–300°C. Oxygen initial sticking coefficients have been determined to be close to 1 for the 100 and 110 films, and around 0.8 for the 111 film. The sticking coefficient and reactive sticking coefficient for CO oxidation on Pd/MgO(100) is also close to 1, and the maximum reactive sticking coefficient for hydrogen oxidation is determined to be around 0.9 at temperatures above 200°C. It is shown that the reactivities for the different surfaces vary strongly with surface and oxygen coverage, and the consequence of this for supported particle catalysts is pointed out.     

The effect of air exposure on palladium–copper composite membranes

It was found that when electrolessly deposited thin Pd and Pd–Cu membranes were exposed to air at temperatures above 350 °C, their H₂ flux increased substantially immediately after the air exposure, then decreased to a new steady-state value. While this was a quasi-reversible change for the H₂ flux, the flux of insoluble species, such as N₂, irreversibly increased with every air exposure but by a much smaller extent. The extent of these changes was found to be dependent on the exposure time and the temperature of the tests. Thus, we decided to investigate the effect of gas exposures on the properties of these materials.

Palladium and palladium–copper films, prepared by electroless deposition on ceramic supports, and commercial foils were exposed to air, hydrogen and helium at 500 and 900 °C for times varying from 1 h to 1 week with the objective of determining the effect of the different exposure conditions on the surface morphology, the flux of different penetrants and the crystalline structure of the materials. Atomic force microscopy (AFM) and X-ray diffraction (XRD) were used to study the changes occurring in the films under those conditions.

It was observed that the exposure of both the electroless films and the foils to hydrogen and air markedly modified their surface morphology. The hydrogen exposure tended to smooth the surface features whereas the oxygen exposure created new surface features such holes and large peaks. Additionally it was found that the air exposure produced some oxidation of the film to create PdO.

These results suggested that a common hypothesis stating that air oxidation just cleans the surface of the membrane might not be sufficient to explain all of those changes. A contributing effect of air exposure may be the increase in surface area due to the formation of palladium oxide. However, the extent of the surface area increase was insufficient to explain the increase in steady-state H₂ flux.     

The adsorption of oxygen on Pd1/W(110)

The behavior of oxygen on Pd₁/W(110) has been investigated from 25 to 200 K by thermal desorption, UPS, XPS, and work function measurements. At 25 K only dioxygen species are present. A weakly bound O₂layer, containing O₂/Pd = 0.31 or 4.4 × 10¹⁴ O₂ molecules/cm² is desorbed at 35 K, leaving a coverage of O₂/Pd = 0.35 or 5 × 10¹⁴ O₂ molecules/cm². Heating to 200 K results in desorption of molecular O₂ as well as conversion to O, with O/Pd = 0.3. The molecular states, except the very weakly bound one, have high dipole moments with electron transfer to O₂, and thus correspond to Superoxide and peroxide species. These have UPS spectra quite different from physisorbed O₂. At 90 K adsorption is still mostly molecular with a sticking coefficient s near unity. At 200 K, adsorption is atomic with an initial s₀ = 0.8. This must be contrasted with Cu₁/W(110) where s₀ is unity even at 300 K. The difference can be explained by the much better size match of Pd and W, than Cu and W which makes it easier for Cu to take up momentum of impinging O₂ molecules.

The behavior of oxygen on Pd₁/W(110) is very similar to that on bulk Pd(111), suggesting that for oxygen the former surface resembles bulk Pd. This is not so for CO adsorption which is much weaker on Pd₁/W(110) than on bulk Pd. The reasons for this difference are not presently understood.     

Single crystal RuO2/Ti and RuO2/TiO2 interface: LEED, Auger and XPS study

The interactions at the evolving RuO₂/titanium interface have been studied by LEED, AES and XPS. Titanium films of up to 5 monolayers were evaporated onto well ordered and ion sputtered ruthenium dioxide crystal surfaces of (110) and (100) orientation. Stabilization of the surface oxygen content under thermal treatment in UHV (up to 600°C) with increasing titanium coverage was established. After extended (up to 4 h) annealing in O₂ at 600°C an epitaxial ordering of TiO₂ on RuO₂(110) was observed. The (1 × 1) LEED patterns from the epitaxial layer exhibit a reduced background level when compared to the RuO₂ substrate itself. These findings are correlated with the XPS data and are interpreted in connection with the disappearance of the defect RuO₂ phase in the surface layer of the RuO₂. The appearance of the (1 × 2) surface reconstruction at the RuO₂(100)/Ti interface is discussed in the context of maximum cation coordination by oxygen atoms.     

Hydrogen uptake kinetics of Pd coated FeTi films

The kinetics of hydrogen uptake of thin films of FeTi deposited on Si substrates and covered with 20 nm Pd were studied. The films serve as a model system for powdered FeTi, with grains that are (partly) covered with Pd, which serves as a protection for severe oxidation. Two FeTi compositions near the 50/50 composition were studied. The hydrogen uptake kinetics as a function of temperature and pressure were measured by probing the differential pressure between a small hydriding reaction chamber and a reference chamber. Both compositions showed first order kinetics for the largest portion of the uptake. Using results of additional measurements in which the thickness of the layers was varied, a model is proposed in which the uptake proceeds via fast channels through the film, followed by slower diffusion into the bulk. Finally, the influence of oxidation was studied. An FeTi-oxide underneath the Pd layer is a barrier for H diffusion. It was found that by annealing the H uptake rate could be increased. This is probably due to the decomposition of the oxide. Samples partly covered with Pd and partly by FeTi-oxides, obtained by decomposing the fully covered structure by air annealing at 250 °C, showed uptake throughout the entire FeTi film with an even faster rate than in a fully covered film. Some explanation with simple models of the observed phenomena is given.     

SiO2 passivation film effects on microwave characteristics of YBa2Cu3O7−x-based resonators

SiO₂ film coated as a passivation layer for YBa₂Cu₃O_7−x (YBCO)-based microwave devices is investigated by measuring the microwave characteristics of microstrip line resonators. The SiO₂ film is deposited with its 0.3 to 0.4 μm thickness by a sputtering method using Ar + 30%O₂ plasma. These deposition conditions do not degrade the microwave characteristics and the critical temperature (T_c). Next, the SiO₂ film coated resonators are compared with the uncoated ones for two kinds of degradation conditions: a 200°C annealing in air, and an exposure to air at 85°C and 85% RH (relative humidity). We find that the SiO₂ passivation film prevents the YBCO thin film from the surface degradation and reacting with water.     

Electrons and holes in undoped Nd2CuO4

Nd₂CuO_4±δ is the non-superconducting prototype of the Re_2−xM_xCuO₄t−y family (Re=Pr, Nd, Sm and M=Ceor Th) of n-type oxide superconductors. Four-probe DC conductivity, EMF in P(O₂) gradient, and thermopower measurements have been used to characterise its electric transport and defect structure between 300 and 900°C and between 5×10⁻⁴ and 1 atm oxygen partial pressure.

The results show that Nd₂CuO_4±δ can be oxygen under-stoichiometric (with n-type conductivity), near-stoichiometric, and over-stoichiometric (with p-type conductivity) in different T, P(O₂) ranges.     

Effect of different oxidizing gases on the in-situ growth of YBa2Cu3O7−δ films by pulsed laser deposition

The effectiveness of oxygen (O₂), nitrous oxide (N₂O), and nitrogen dioxide (NO₂) as oxidizing agents during in-situ growth of YBa₂Cu₃O_7−δ (YBCO) films on (100) SrTiO₃ substrates by pulsed laser deposition has been studied as a function of deposition temperature (700–800°C), and laser wavelength (193,248 and 355 nm), for a wide range of oxidizer gas pressure (0.1–200 mTorr). In general, the superconducting transition temperature of the films has been found to increase with increasing oxidant pressure, with zero-resistance temperature ≈90 K only obtained in films prepared in a relatively high pressure (150–200 mTorr) of oxidizer gas. At lower pressures, the transition temperature while being depressed is quite sensitive to the nature of the oxidant, the laser wavelength and the deposition temperature. Nevertheless, independent of the oxygen source or other growth parameters, an almost linear decrease in transition temperature with a corresponding increase in the c-axis lattice parameter has been observed for all the film. YBCO films have also been deposited in a low pressure background (≤ 1 mTorr) using a combination of atomic oxygen and pulsed molecular oxygen. The results are discussed in terms of the oxygen requirement for kinetic and thermodynamic stability of YBCO during growth of the film by pulsed laser deposition.     

Absorption coefficients of O3 at CO2 laser wavelengths

The O₃ absorption coefficients for the rotational lines P(12)–P(28) of the 9.4 μm emission band of the CO₂ laser are presented. Measurements were made in O₃–air dilute mixtures (20–600 ppm) at 25°C and a total pressure of 1013.25 h Pa using a frequency stabilized cw CO₂ laser and values have been determined with greater precision than in previously reported studies.     

Reactive sintering for oriented and connected Bi-2223 superconductive oxides from a mixture of delaminated Bi-2212 and fine powdered supplemental ingredients

Single crystals of NdBa₂Cu₃O_7−δ (Nd123) have been successfully grown by the top-seeded solution-growth (TSSG) method in 1%, 21% and 100% oxygen partial pressure atmosphere ((P(O₂) = 0.01 atm, P(O)₂) = 0.21 atm and P(O₂) = 1.00 atm). Ba---Cu---O solvent with a Ba to Cu ratio of 3:5 was used in a Nd₂O₃ crucible. Nd is supplied by the reaction between the molten solvent and the Nd₂O₃ crucible. Compositions of Nd123 single crystals grown in different oxygen partial pressure atmospheres were analyzed by inductivity coupled plasma atomic emission spectrometry (ICP-AES) and confirmed to be Nd:Ba:Cu = 1.01:1.97:3.00 for P(O₂) = 0.01 atm, Nd:Ba:Cu = 1.07:1.95:3.00 for P(O₂) = 0.21 atm and Nd:Ba:Cu = 1.10:1.90:3.00 for P(O₂) = 1.00 atm, respectively. The Nd123 single crystals grown in different oxygen partial pressure atmospheres were annealed in a pure oxygen gas flow, and the temperature dependence of the DC magnetization for these crystals was measured using a superconducting quantum interference device (SQUID) magnetometer. The Nd123 single crystal grown in P(O₂) = 0.01 atm, and annealed at 340°C for 200 h showed a steep superconductive transition at 96 K. On the other hand, the Nd123 crystal grown in P(O₂) = 0.21, 1.00 atm and, annealed at 340°C for 200 h exhibited a broad transition at 92 K for P(O₂) = 0.21 atm and at 88 K for P(O₂) = 1.00 atm, respectively. Therefore for Nd123 single crystal production with high quality superconductive characteristics, a low oxygen partial pressure atmosphere during crystal growth is found to be effective for minimizing the substitution of Nd ions into Ba sites.     

A comparison of FePt thin films with HfO2 or MnO additive

The influence of oxide additives on the magnetic and structural properties of FePt L1₀ thin films has been studied. FePt films with HfO₂ additive grown on a 5 nm MgO buffer showed a primarily random texture for both as-deposited and annealed samples. The average grain size was limited to 10 nm and the perpendicular coercivity was 1.3 kOe for a 10 nm thick FePt +20% HfO₂ film annealed at 650°C for 10 min. In direct contrast, MnO additive neither limited grain size nor L1₀ ordering in annealed FePt films. A 10 nm thick FePt+20% MnO film grown on a 5 nm MgO buffer showed a unique discontinuous microstructure composed of clusters of (0 0 1) textured L1₀ grains after being annealed at 650°C for 10 min. The average size of the grains making up these clusters was 50 nm and the perpendicular coercivity of the film exceeded 7 kOe.     

Electrical conductivity and defect structure of Mg-doped Cr2O3

The electrical conductivity of Cr₂O₃ nominally doped with 2 mol% MgO has been studied by the four point a.c. technique as a function of the oxygen activity (O₂ + Ar, CO + CO₂ and H₂ + H₂O) in the temperature range 400–1200 °C. It is concluded that Cr₂O₃ doped with MgO is an extrinsic conductor and that the dissolved Mg-dopant is compensated by the formation of electron holes at near atmospheric oxygen pressures and by oxygen vacancies (or possibly interstitial chromium ions) at highly reduced oxygen activities (in CO + CO₂ and H₂ + H₂O gas mixtures). In H₂ + H₂O mixtures Mg-doped chromia also dissolves hydrogen as protons and significantly affects the defect structure and electrical conductivity. The defect structure of the oxide under various conditions is discussed.     

Structure and NO reactivity of Zr-deposited Pd surfaces

The structure and NO reactivity of Zr-deposited Pd surfaces were investigated by X-ray photoelectron spectroscopy, low-energy electron diffraction, infrared reflection absorption spectroscopy, and temperature-programmed desorption. Zr on Pd(1 0 0) was oxidized to ZrO₂ by exposure to O₂ at 773 K. Heating at 823 K in a vacuum led to decomposition of ZrO₂ to Zr metal and O₂. The activation energy for ZrO₂ decomposition changed remarkably at Θ_Zr = 0.4. For Θ_Zr > 0.4, a hexagonal structure was observed for ZrO₂/Pd(1 0 0); no ordered structure was observed for Θ_Zr < 0.4. Deposited Zr had no significant effect on the adsorption and decomposition of NO on Pd(1 0 0) but resulted in a creation of new NO dissociation sites on Pd(3 1 1). Zr on Pd(3 1 1) was oxidized to ZrO_X by oxygen produced from NO dissociation. Heating at 823 K in a vacuum led to decomposition of ZrO_X to Zr metal and O₂.