Magnetic and structural properties of Fe ion-implanted GaN

The magnetic and structural properties of Fe ion-implanted GaN was investigated by various measurements. XRD results did not show any peaks associated with second phase formation. The magnetization curve at 5 K showed ferromagnetic behavior for 900 °C-annealed sample. In zero-field-cooled (ZFC) and field-cooled (FC) magnetization measurements, the irreversibility and a cusp-like behavior of the ZFC curve were observed for 900 °C-annealed sample. These behaviors are typically observed in superparamagnetic or spin glass phase. While the temperature dependence magnetization of 800 °C-annealed sample showed non-Brillouin-like curve and it is not exhibited ferromagnetic hysteresis at 5 K. In XPS measurement, the coexistence of metallic Fe (Fe⁰) and Fe–N bond (Fe²⁺ and Fe³⁺) for Fe 2p core level spectra is observed in as-implanted sample. But 700–900 °C-annealed samples showed only Fe–N bond (Fe²⁺ and Fe³⁺) spectra. For Ga 3d core level spectra only Ga–N bonds showed for as implanted with 700–900 °C-annealed samples. From XPS results, it could be explained that magnetic property of our films originated from FeN structures.     

Magnetic and structural study of Cu-doped TiO2 thin films

Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO₂ thin films were grown by pulsed laser deposition technique on LaAlO₃ substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO₂. The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO₂.     

Optical and magnetic properties of (Ga1−xMnx)N/GaN digital ferromagnetic heterostructures

(Ga_1−xMn_x)N/GaN digital ferromagnetic heterostructures (DFHs) and (Ga_1−xMn_x)N/GaN grown on GaN buffer layers by using molecular beam epitaxy have been investigated. The photoluminescence (PL) spectra showed band-edge exciton transitions. They also showed peaks corresponding to the neutral donor-bound exciton and the exciton transitions between the conduction band and the Mn acceptor, indicative of the Mn atoms acting as substitution. The magnetization curves as functions of the magnetic field at 5 K indicated that the saturation magnetic moment in the (Ga_1−xMn_x)N/GaN DFHs decreased with increasing Mn mole fraction and that the saturation magnetic moment and the coercive field in the (Ga_1−xMn_x)N/GaN DFHs were much larger than those in (Ga_1−xMn_x)N thin films. These results indicate that the (Ga_1−xMn_x)N/GaN DFHs hold promise for potential applications in spintronic devices.     

Magnetic behavior of MnAs precipitates in Ga1−xMnxAs diluted magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x≈4.7–5.5%) were grown on (1 0 0) GaAs substrates by molecular beam epitaxy. These p-type (Ga,Mn)As films were revealed to have a ferromagnetic structure and ferromagnetism is observed up to a Curie temperature of 318 K, which is ascribed to the presence of MnAs secondary magnetic phases within the film. It is highly likely that the phase segregation occurs due to the high Mn cell temperature around 890–920 °C, as it is well established that GaMnAs is unstable at such a high temperature. The MnAs precipitate in the samples with x≈4.7–5.5% has a Curie temperature T_c≈318 K, which was characterized from field-cooled and zero-field-cooled magnetization curves.     

Influence of Mn-Doped Content on Ferromagnetism of Ga1-xMnxN Film Grown by LP-MOVPE

The diluted magnetic semiconductor Ga_1-xMn_xN was achieved by low-pressure metal organic vapour-phase epitaxy (LP-MOVPE). Proton-induced x-ray emission was employed non-destructively, quickly and accurately to determine the Mn-doped content. The magnetic property was measured by a superconducting-quantum-interference-device (SQID) magnetometer. Apparent ferromagnetic hysteresis loops measured at or above room temperature are presented. No ferromagnetic secondary phases were detected by high-resolution x-ray diffraction. The experimental results show that the ferromagnetic signal firstly decreases and then increases with the increasing Mn-doped content from 0.23% to 4.69% and it is the weakest when Mn content is 0.51%. The annealing treatment could make the ferromagnetic property stronger.     

Magnetic interactions in Co-based alloy thin films

The interactions in ternary and quaternary Co-based alloy thin films for longitudinal recording media, with different thickness, are studied. The analysis is performed through the measurement of the initial magnetization and ordinary hysteresis curves. The interactions result stronger in quaternary than in ternary alloy films and when the film thickness is smaller. These findings are discussed in relationship with the evolution of the magnetization switching, characterized by a tendency towards a more coherent rotation of the magnetization in single-domain grains of thinnest and quaternary films, owing to the complex structure of these films. The impact of this evolution on the thermal stability of the magnetic properties is also discussed.     

Band-edge exciton transitions in (Ga1−xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition

(Ga_1−xMn_x)N thin films grown on GaN buffer layers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors (DMSs) with band-edge exciton transitions for applications in optomagnetic devices. The magnetization curve as a function of the magnetic field at 5 K indicated that ferromagnetism existed in the (Ga_1−xMn_x)N thin films, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga_1−xMn_x)N thin film was above room temperature. Photoluminescence and photoluminescence excitation spectra showed that band-edge exciton transitions in (Ga_1−xMn_x)N thin films appeared. These results indicate that the (Ga_1−xMn_x)N DMSs with a magnetic single phase hold promise for potential applications in spin optoelectronic devices in the blue region of the spectrum.     

The role of the dopant in the magnetism of Fe-doped SnO2 films

Transparent pure and Fe-doped SnO₂ thin films were grown by pulsed laser deposition technique on LaAlO₃ substrates. X-ray diffraction shows that the films are polycrystalline and have the rutile structure. Surprisingly, the pure film presents magnetic-like behavior at room temperature with a saturated magnetization of almost one-third of the doped film (∼3.6 and 11.3 emu/g, respectively) and its magnetization could not be attributed to any impurity phase. Taking into account the magnetic moment measured in the pure film, the effective contribution of the impurity in the doped one can be inferred to be ∼2 μ_B per Fe atom. A large magnetic moment was also predicted by an ab initio calculation in the doped system, which increases if an oxygen vacancy is present near the Fe impurity.     

Analysis of Raman scattering of Ga1−xMnxAs dilute magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x=1.4-3.0%) grown on (1 0 0) GaAs substrates by molecular beam epitaxy were characterized using Raman spectroscopy. As Mn is introduced into GaAs, a marked increase in disorder in the material occurs, as indicated by the growth of the disorder-allowed transverse-optical Raman line. Another important result is that as the Mn concentration in Ga_1−xMn_xAs increases further beyond ca. 2%, Raman-active coupled-plasmon-longitudinal-optical phonon modes arise, which signals the increasing presence of holes, and thus provides a useful tool for determining their concentration. Using the depletion-layer approach from the Raman spectroscopy data, we determined the carrier concentration for samples with x=2.2% and 3.0% was to be 7.2×10¹⁹ and 8.3×10²⁰ cm⁻³, respectively.     

Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method

Fe-doped GaN thin films are grown on c-sapphires by metal organic chemical vapour deposition method （MOCVD） Crystalline quality and phase purity are characterized by x-ray diffraction and Raman scattering measurements. There are no detectable second phases formed during growth and no significant degradation in crystalline quality as Fe ions are doped. Fe-related optical transitions are observed in photoluminescence spectra. Magnetic measurements reveal that the films show room-temperature ferromagnetic behaviour. The ferromagnetism may originate from carrier-mediated Fe-doped GaN diluted magnetic semiconductors or nanoscale iron clusters and FeN compounds which we have not detected.     

Magnetic properties of field-annealed FeCo thin films

Fe₅₀Co₅₀ thin films with thickness of 30 and 4 nm have been produced by rf sputtering on glass substrates, and their surface has been observed with atomic force microscopy (AFM) and magnetic force microscopy (MFM); MFM images reveal a non-null component of the magnetization perpendicular to the film plane. Selected samples have been annealed in vacuum at temperatures of 300 and 350 °C for times between 20 and 120 min, under a static magnetic field of 100 Oe. DC hysteresis loops have been measured with an alternating gradient force magnetometer (AGFM) along the direction of the field applied during annealing and orthogonally to it. Samples with a thickness of 4 nm display lower coercive fields with respect to the 30 nm thick ones. Longer annealing times affect the development of a harder magnetic phase more oriented off the film plane. The field applied during annealing induces a moderate magnetic anisotropy only on 30 nm thick films.     

Magnetic properties of FeSiB thin films displaying stripe domains

FeSiB amorphous thin films with thicknesses from 25 to 600 nm have been produced by rf sputtering on Si₃N₄ substrates. A spin reorientation transition has been observed on the as-prepared samples, as a function of thickness and temperature. Spin reorientation transition is shown to depend on the thermal treatments to which the as-prepared samples have been submitted. Static hysteresis loops obtained as a function of temperature, and magnetic force microscopy images taken at room temperature at the remanence and as a function of an applied magnetic field, have been employed to study the magnetic domain configuration of all the samples, and to see how it is affected by sample thickness, measurement temperature and annealing conditions.     

Effects of Slight Plastic Deformation on Magnetic Properties and Giant Magnetoimpedance of FeCoCrSiB Amorphous Ribbons

Slight plastic deformation of 0 to 1% by cold rolling is proposed as a treatment which may modify the responses of magnetoimpedance （MI） sensor with an amorphous ribbon used as a sensitive element. The dependence of the magnetic properties of melt spun Fe3Co67Cr3Si15B12 amorphous ribbons and their MI responses in the initial state and after slight plastic deformation on the value of the deformation were comparatively analysed. The shape of the hysteresis loops shows a clear correlation with the value of the deformation. The variations of the total impedance, the real and the imaginary components, are measured for the current intensity of 1.S mA for the frequency of lO MHz. Slight plastic deformation affects both real and imaginary components and allows a control of the shape of the MI curves in a small field in a range usually used in biomedical applications. The proposed deformation treatments can be useful for the construction of the MI sensitive elements with a new type of the responses.     

The origin and control of the sources of AMR in (Ga,Mn)As devices

We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analysed. These methods are used to explore the unusual phenomenology of the AMR in ultra thin (5 nm) (Ga,Mn)As layers and to demonstrate how the components of the AMR can be engineered through lithography induced local lattice relaxations. We expand on our previous [A.W. Rushforth, et al., Phys. Rev. Lett. 99 (2007) 147207] theoretical analysis and numerical calculations to present a simplified analytical model for the origin of the non-crystalline AMR. We find that the sign of the non-crystalline AMR is determined by the form of the spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential.     

Optical and magnetic properties of laser-deposited Co-doped ZnO thin films

We report the optical and magnetic properties of laser-deposited Zn_1−xCo_xO (x=0.06-0.3) thin films with no intentional electrical carrier doping. The analysis of the high-temperature magnetization data provides an unambiguous evidence that antiferromagnetic superexchange interaction is the dominant mechanism of the exchange coupling between Co ions in Zn_1−xCo_xO alloy, yielding the value of the effective exchange integral J₁/k_B to be about −27 K. The low-temperature magnetization data reveals a spin glass transition in Zn_1−xCo_xO alloy for the Co content x>0.15, giving the value of the spin freezing temperature T_f to be ∼8 and ∼12 K for x=0.2 and 0.25, respectively. Optical spectra analysis shows a linear increase of the band gap E_g with the increase of the Co content following E_g=3.231+1.144x eV.     

Synthesis and characterization of Ni-doped ZnO: A transparent magnetic semiconductor

We report synthesis of a transparent magnetic semiconductor by incorporating Ni in zinc oxide (ZnO) matrix. ZnO and nickel-doped zinc oxide (ZnO:Ni) thin films (∼60 nm) are prepared by fast atom beam (FAB) sputtering. Both undoped and doped films show the presence of ZnO phase only. The Ni concentration (in at%) as determined by energy dispersive X-ray (EDX) technique is ∼12±2%. Magnetisation measurement using a SQUID magnetometer shows that the Ni-doped films are ferromagnetic, having coercivity (H_c) values 192, 310 and 100 Oe and saturation magnetization (M_s) values of 6.22, 5.32 and 4.73 emu/g at 5, 15 and 300 K, respectively. The Ni-doped film is transparent (>80%) across visible wavelength range. Resistivity of the ZnO:Ni film is ∼2.5×10⁻³ Ω cm, which is almost two orders of magnitude lower than the resistivity (∼4.5×10⁻¹ Ω cm) of its undoped counterpart. Impurity d-band splitting is considered to be the cause of increase in conductivity. Interaction between free charges generated by doping and localized d spins of Ni is discussed as the reason for ferromagnetism in the ZnO:Ni film.     

Structural stability and magnetic properties of Co-doped or adsorbed polar-ZnO surface

The structural stability and magnetic properties of Co-doped or -adsorbed polar-ZnO surface systems are investigated using first-principles calculations. It is found that Co ions energetically prefer to substitute for Zn in the outermost layer of both Zn- and O-terminated surfaces. Substitutional Co ions are antiferromagnetically coupled at ideal ZnO surfaces, which indicates additional defects or strain played a critical role in the reported ferromagnetism of ZnO : Co system. In addition, it is found that the adsorbed Co ions are preferred to ferromagnetic coupling, which may provide a new approach for spin injection of a ZnO film.     

Magnetic and optical properties of epitaxial n-type Cu-doped ZnO thin films deposited on sapphire substrates

In this paper, we report on pulsed laser deposition of n-type Cu-doped ZnO thin films on c-plane sapphire substrates at 700°C. XRD and HRTEM were employed to study the epitaxial growth relationship between the Zn_1−x Cu _x O film and sapphire substrate. Absorption measurements showed excitonic nature of the thin films and a decrease in the bandgap energy with increased Cu concentration was observed. Such as-deposited films showed room temperature ferromagnetism with Curie temperature (T _c ) at around 320 K. The moment per Cu atom decreases as the Cu concentration increases. The largest magnetic moment about 0.81μ _B /Cu atom was observed for Zn_0.95Cu_0.05O thin films. The presence of any magnetic second phase was ruled out and the ferromagnetism was attributed to Cu ions substituted directly into the ZnO lattice.     

Structural and Magnetic Properties of Fe-Doped Anatase TiO2 Films Annealed in Vacuum

Structural and magnetic properties of Fe-doped anatase TiO2 films fabricated by sol-gel spin coating are investigated. X-ray diffraction measurements reveal that Fe^3＋ ions are incorporated into the TiO2 lattice. No ferromagnetism-related secondary phases and magnetic nanopaxticles are observed in the films. The presence of electron paramagnetic resonance signals at 9- 2.0 supports oxygen vacancies and/or defects generated in the films after annealing in vacuum. Magnetic measurements indicate that Fe-doped anatase TiO2 films are ferromagnetic at room temperature. These observations suggest that oxygen vacancies and/or defects axe energetically favorable for the long range Fe^3＋-Fe^3＋ ferromagnetic coupling in Fe-doped anatase TiO2 films.     

Photoluminescence investigation of ferromagnetic Ga1−xMnxN layers with GaN templates grown on sapphire (0 0 0 1) substrates

We have investigated the temperature and composition dependent photoluminescence (PL) spectra in Ga_1−xMn_xN layers (where x ≈ 0.1-0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. The efficient PL is peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. The band-gap energy of the Ga_1−xMn_xN layers decreased with increasing temperature and manganese composition. The band-gap energy of the Ga_1−xMn_xN layers was modeled by the Varshni equation and the parameters were determined to be α = 2.3 × 10⁻⁴, 2.7 × 10⁻⁴, 3.4 × 10⁻⁴ eV/K and β = 210, 210, and 230 K for the manganese composition x = 0.1%, 0.2%, and 0.8%, respectively. As the Mn concentration in the Ga_1−xMn_xN layers increased, the temperature dependence of the band-gap energy was clearly reduced.