A comparison between the Raman modes of the tetrahedral network in amorphous and layered crystalline GeSe2

The characteristic A₁ peak at 199 cm⁻¹ in the Raman spectrum of amorphous GeSe₂ were compared with the peaks at 211 and 216 cm⁻¹ in the spectrum of crystalline GeSe₂. It was proved that the crystalline 216 cm⁻¹ peak is an intrinsic mode which is enhanced by the bulk exciton transition. From a model calculation using a valence force field and bond polarizability, the 211 cm⁻¹ peak was assigned to in-phase breathing vibrations extended along the GeSe₄ tetrahedral chain structure, while the 216 cm⁻¹ peak was attributed to in-phase breathing vibrations quasi-localized at the GeSe₄ edge-sharing tetrahedra. The phonon density of states in the crystal has a doublet peak similar to the amorphous Raman spectrum. A correspondence between the amorphous and the crystalline Raman spectra was proposed.     

Photo-enhanced crystallization by laser irradiation and thermal annealing in amorphous GeSe2

The laser irradiated crystallization process in amorphous GeSe₂ was studied by Raman scattering to discriminate between thermal and photo-induced contributions. Amorphous GeSe₂ crystallizes into a low-temperature (LT) form, LT-GeSe₂, and a high-temperature (HT) form, HT-GeSe₂. An amorphous sample was annealed at various temperatures and times in an electric furnace with and without laser irradiation. The laser power was adjusted to about 20 mW having a 0.4 mm spot size to determine the photo-induced effect. The difference between the thermal and laser irradiated crystallization process was discussed by considering the activation energy of crystallization. The activation energy due to laser irradiation above the band-gap energy was found to be smaller than that for the pure thermal crystallization process. We present a model for the photo-enhanced effect in which the lone-pair electrons of Se atoms are excited by the photons and the bond switching or atomic rearrangement occurs when the electrons relax through an electron–phonon interaction.     

Disorder in GeSe2 small crystals and medium-range structure in amorphous GeSe2

The Raman scattering spectra of various forms of GeSe₂, such as amorphous films, single crystals, and small crystals prepared by a gas-evaporation deposition technique, are investigated with an excitation photon energy ranging from 2.1 to 2.8 eV. In the spectra of the crystals, there are two Raman bands, originating from two types of breathing vibrations of the GeSe_4/2 tetrahedra: one is spread over the corner-sharing tetrahedra and the other is quasi-localized on the edge-sharing tetrahedra. In addition to the resonant Raman scattering related to the edge-sharing tetrahedra through the exciton transition observed with 2.71 eV excitation in the single crystals, a new resonant spectrum is found only in the small crystals with 2.54 eV excitation. With increasing disorder in the crystals, the intensity ratio between the two breathing vibration bands increases in the off-resonant excitation region. The Raman spectra in the amorphous states are ascribed to the breathing vibrations of GeSe_4/2 tetrahedra which form a medium-range structure topologically similar to that of crystalline fragments.     

Crystallization processes of Ag–Ge–Se superionic glasses

The interest in superionic systems has increased in recent years because of the potential application of these materials as solid electrolytes. In this field, amorphous materials present important advantages when compared to the crystalline solids: larger conductivity, isotropy and absence of grain boundaries. In this work, amorphous alloys of compositions (Ge₂₅Se₇₅)_100−yAg_y with y=10, 15, 20 and 25 at.% have been studied. Amorphous samples in bulk were obtained from the liquid by water quenching (melt-quenching technique). The crystallization kinetics of the amorphous alloys have been studied under continuous heating and isothermal conditions by means of differential scanning calorimetry. A glass transition and two exothermic transformations were observed in all the samples. The quenched samples and the crystallization products have been characterized by X-ray diffraction. The primary crystallization of the ternary phase Ag₈GeSe₆ and the secondary phase GeSe₂ was observed. The glass and crystallization temperatures, the activation energy and the crystallization enthalpy are reported. The first step of the crystallization of the Ag₈GeSe₆ phase in all the (Ge₂₅Se₇₅)_100−yAg_y samples is modelled taking into account the Johnson–Mehl–Avrami–Kolmogorov theory and considering that the changes in the composition only modify the viscosity of the undercooled liquid. The transformation diagrams (TTT and THRT) are calculated and the glass forming ability is analyzed. The experimental results are discussed and correlated with the structures proposed for the glass. The present results and conclusions are also compared with those reported by other authors.     

Structure and properties of the pure and Pr-doped Ge25Ga5Se70 and Ge30Ga5Se65 glasses

The Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ pure and Pr³⁺-doped glasses were prepared by direct synthesis from elements and PrCl₃. It was found that up to 1 mol% PrCl₃ can be introduced in the Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ glasses. Both types of glasses with overstoichiometric and substoichiometric content of Se were homogeneous and of black color. The optical energy gap is E^opt_g=2.10 eV, and the glass transition temperature is T_g=543 K for Ge₂₅Ga₅Se₇₀ and T_g=633 K for Ge₃₀Ga₅Se₆₅. The long-wavelength absorption edge is near 14 μm and it corresponds to multiphonon processes. Doping by Pr³⁺ ions creates absorption bands in transmission spectra, which can be assigned to the electron transitions from the ground ³H₄ level to the higher energy levels of Pr³⁺ ions ³H₅, ³H₆, ³F₂, ³F₃ and ³F₄, respectively. By excitation with YAG:Nd laser line (1064 nm), two intense luminescence bands (1343 and 1601 nm) were excited. The first band can be ascribed to electron transitions between ¹G₄ and ³H₅ energy levels of Pr³⁺ ions. Full width at half of maximum (FWHM) of the intensity of luminescence was found to be 70 nm for (Ge₂₅Ga₅Se₇₀)_1 − x(PrCl₃)_x and (Ge₃₀Ga₅Se₆₅)_1 − x(PrCl₃)_x glasses. The FWHM in selenide glasses is lower than in halide and sulphide glasses. The second luminescence band (1601 nm) can be probably ascribed to the transitions between ³F₃ and ³H₄ energy levels of Pr³⁺ ions. The absorption and luminescence spectra of Pr³⁺ ions in studied glasses are slightly influenced by stoichiometry of glassy matrix. The Raman spectra of studied glasses were deconvoluted and assignment of Raman bands to individual vibration modes of basic structural units was suggested. The structure of studied glasses is mainly formed by corner-sharing and edge-sharing GeSe₄ tetrahedra. The vibration modes of Ga-containing structural units were not found, they are apparently overlapping with Ge-containing structural units due to small difference between atomic weights of Ge and Ga. In the glasses with substoichiometry of Se, the Ge–Ge bonds of Ge₂Se₆ structural units were found. In Se-rich glasses the Se–Se vibration modes were found. In all studied glasses also ‘wrong' bonds between like atoms were found in small amounts. Maximum phonon energy of studied glasses is 320 cm⁻¹.     

Structure and Raman spectra of glasses containing several glass-forming oxides and no glass-modifying oxide

Binary glasses containing no modifying oxides, such as SiO₂---GeO₂, SiO₂---B₂O₃, SiO₂---P₂O₅, GeO₂---B₂O₃, Al₂O₃---P₂O₅ and ternary glasses SiO₂---GeO₂---P₂O₅, Al₂O₃---B₂O₃---P₂O₅, B₂O₃---SiO₂---P₂O₅, Al₂O₃---ZrO₂---P₂O₅ have been prepared by melting and CVD methods. The Raman spectra have also been measured. Structural characteristics of SiO₂, GeO₂, B₂O₃, P₂O₅ in different glass systems are analysed. There exist coordination number changes in B₂O₃- and GeO₂-containing glasses and linkage changes between tetrahedra (SiO₄) and (PO₄) in SiO₂ and P₂O₅ containing glasses. The structure of Al₂O₃ containing glasses is homogeneous and the structure of B₂O₃ containing glasses is inhomogeneous. These experimental results are in coincidence with the X-ray small angle scattering analysis.     

(Sm0.5Gd0.2Nd0.3)2(Hf0.3Ce0.7)2O7复合氧化物的热物理性能

为寻求新型热障涂层用陶瓷材料,本文采用高温固相烧结法制备了(Sm_0.5Gd_0.2Nd_0.3)₂(Hf_0.3Ce_0.7)₂O₇复合氧化物。利用XRD分析了其晶体结构,SEM分析其显微组织,膨胀仪测试其热膨胀性能,激光热导仪测试其热扩散系数。结果表明,成功制备了具有单一萤石晶体结构的(Sm_0.5Gd_0.2Nd_0.3)₂(Hf_0.3Ce_0.7)₂O₇复合氧化物。其显微组织结构致密,晶界清晰无其他相存在。由于复杂的元素组成和较大的原子量,其热导率明显低于7YSZ和Sm₂Ce₂O₇。其较低的热膨胀系数则归因于B位离子较小的离子半径,但其热膨胀系数依然满足热障涂层的要求。     

SiW12、CsPbI3协同提高TiO2纳米管光电转换效率的研究

为克服TiO₂纳米管在光电转换时电子-空穴复合率高和吸收光谱范围窄的缺陷,利用多酸H₄SiW₁₂O₄₀(SiW₁₂)和CsPbI₃量子点对其协同修饰,采用电沉积法将SiW₁₂沉积在TiO₂纳米管上,制备了SiW₁₂/TiO₂纳米管复合薄膜;使用高温热注射法合成出CsPbI₃量子点,再通过化学浴沉积法沉积CsPbI₃量子点到复合薄膜上,得到SiW₁₂/CsPbI₃/TiO₂纳米管复合薄膜,探究SiW₁₂沉积时间、CsPbI₃沉积次数对TiO₂纳米管光电性能的影响。利用扫描电子显微镜(SEM)、能谱仪(EDS)、透射电子显微镜(TEM)、X射线衍射(XRD)仪、红外分光光度计(FT-IR)、紫外-可见分光光度计(UV-Vis)对薄膜进行表征,使用电化学工作站测试薄膜的光电化学性能。结果表明:TiO₂纳米管沉积多酸SiW₁₂和CsPbI₃量子点后,光吸收范围扩大、电荷转移电阻降低,光电转换效率得到显著提升,最高达到0.52%。说明SiW₁₂和CsPbI₃的协同作用很好地抑制了TiO₂纳米管电子-空穴的复合,并拓宽了吸收光谱范围,提高了TiO₂纳米管的光电转换效率。     

Influence of chlorine-fluorine substitution on the electrical properties of some fluoride glasses

Study of electrical properties of two series of glasses (ZrF₄)₅₄(BaF₂)₃₀(ThF₄)₅(LaF₃)₃(RbF)_8(1−x)(RbCl)_8x (0 x 1) and (ZrF₄)₅₀(BaF₂)₃₀(ThF₄)₅(LaF₃)₃(RbF)_12(1−x)(RbCl)_12x (0 x 1) demonstrates the existence of a mixed mobile anion effect in these anion-conducting glasses. The effective medium approach has been applied to these materials: a satisfactory fitting is obtained as a function of the Cl/(Cl + F) ratio and temperature; the ionic transport in these glasses takes place along preferential pathways.     

TOPCon太阳电池发射极Al2O3/SiNx与SiO2/Al2O3/SiNx叠层膜钝化性能的比较

本文对TOPCon电池发射结的叠层钝化膜进行了研究,对比了3种不同叠层钝化膜(SiO₂/SiN_x、Al₂O₃(1.5 nm)/SiN_x、SiO₂/Al₂O₃(1.5 nm)/SiN_x)的钝化性能。结果表明:Al₂O₃(1.5 nm)/SiN_x的钝化性能优于SiO₂/SiN_x,SiO₂/Al₂O₃(1.5 nm)/SiN_x的钝化水平最佳,隐开路电压均值可达到705 mV。基于Al₂O₃/SiN_x叠层膜研究了Al₂O₃厚度(1.5 nm、3 nm和5 nm)对钝化性能和电池转换效率的影响。当Al₂O₃厚度由1.5 nm增加到3 nm时,钝化性能得到明显提升,隐开路电压均值提高了20 mV,达到707 mV,对应电池的光电转换效率升高了0.23个百分点,与SiO₂/Al₂O₃(1.5 nm)/SiN_x叠层膜电池的转换效率持平。然而,当Al₂O₃厚度继续增加至5 nm时,隐开路电压均值保持不变。因此可以使用Al₂O₃(3 nm)/SiN_x叠层膜代替SiO₂/Al₂O₃(1.5 nm)/SiN_x叠层膜,不仅简化了电池的工艺步骤,而且降低了生产成本。     

TiO2/Ni3[Ge2O5](OH)4复合材料的制备及光催化性能

以Ni₃[Ge₂O₅](OH)₄为载体,氟钛酸铵为原料,采用水热辅助液相沉积法制备了纳米TiO₂/ Ni₃[Ge₂O₅](OH)₄复合材料。通过X射线衍射(XRD)、拉曼光谱分析(RM)、场发射扫描电子显微镜(FE-SEM)、高分辨透射电镜(HTEM)、紫外-可见吸收光谱(UV-Vis)等表征手段对样品的物相组成、结构特性及微观形貌做了检测分析,并且探究了不同二氧化钛负载量对纳米TiO₂/Ni₃[Ge₂O₅](OH)₄复合材料光降解亚甲基蓝能力的影响规律。结果表明,实验实现了纳米TiO₂与Ni₃[Ge₂O₅](OH)₄的紧密复合与有效分散,TiO₂为锐钛矿型结构,平均粒径20 nm。该复合材料能够有效抑制光生载流子的复合,改善材料的吸附性能,提高材料的光催化效率。当复合材料中TiO₂与Ni₃[Ge₂O₅](OH)₄的摩尔比为3.1∶1时,材料对亚甲基蓝的光催化效率最高,90 min亚甲基蓝的光降解率为99.81％。     

两例相同混合配体构筑的Pb(Ⅱ)/Ag(I)配位聚合物及其荧光性质

多齿配体2-咪唑乙酸(Hima)、4,4'-连吡啶分别与金属盐Pb(NO₃)₂和AgNO₃反应,得到[Pb₂(4,4'-bipy)(ima)(NO₃)₃]_n(1, 3D framework)和[Ag₄(4, 4'-bipy)₃(ima)₂(NO₃)₂(H₂O)₂]_n(2, 3D framework)两个配位聚合物。根据配位聚合物的结构特点,研究了这两个配位聚合物荧光性质等物理化学性能。配位聚合物1在最大激发波长(λ_ex=346 nm)激发下,荧光的最大发射波长为552 nm,配位聚合物2在最大激发波长(λ_ex=369 nm)激发下,荧光的最大发射波长为444 nm。这可能是由于金属和配体之间发生了电荷转移(LMCT)。     

铝源种类对熔盐法制备超细ZnAl2O4粉体的影响

本文以Al(OH)₃、煅烧Al₂O₃和纳米Al₂O₃为铝源,在KCl和LiCl的混合熔盐介质中,800~1 200 ℃温度范围内保温3 h合成超细ZnAl₂O₄粉体。采用XRD、SEM、激光粒度仪和比表面分析仪等重点分析了铝源种类对ZnAl₂O₄粉体合成温度、产物物相组成以及显微形貌的影响。在此基础上探讨了反应温度、熔盐与原料的质量比(W_s/W_r)对粉体合成的影响。结果表明:铝源种类显著影响ZnAl₂O₄的开始形成温度和粉体性能,相比于煅烧Al₂O₃,以Al(OH)₃和纳米Al₂O₃为铝源生成ZnAl₂O₄的速率较快,在900 ℃时即可合成出单相ZnAl₂O₄。以煅烧Al₂O₃粉为铝源,当W_s/W_r为3∶1时,在1 000 ℃合成ZnAl₂O₄粉体的分散性最佳,而温度过高易造成粉体团聚长大。适当的W_s/W_r有利于ZnAl₂O₄的生成,当W_s/W_r为4∶1时合成的ZnAl₂O₄粒径最小。ZnAl₂O₄粉体均在一定程度保持着初始铝源的尺寸和形貌,表明熔盐法合成ZnAl₂O₄的机理主要遵循着“模板合成机理”。     

The enthalpy relaxation of amorphous Fe---Co alloys with metal-metalloid and metal-metal compositions

The enthalpy relaxation behaviour of metal-metalloid type (Fe_0.5Co_50.5)₈₃P₁₇ and metal-metal type (Fe_0.5Co_0.5) _90-Zr10 amorphous alloys was investigated with a DSC measurement. The annealing temperature (T_a) dependence of the annealing-induced reversible enthalpy relaxation evaluated with an endothermic showed the maximum at thesame T_a for the two alloys, but the magnitude of the relaxation was considerably smaller for the (Fe_0.5Co_0.5)₉₀Zr₁₀ alloy. Moreover, it was found that the amorphous (Fe_0.5Co_0.5)₉₀Zr₁₀ alloy has a larger atomic packing density and a higher activation energy of the enthalpy relaxation than the amorphous (Fe_0.5Co_0.5)₈₃P₁₇ alloy. Rhe small enthalpy relaxation and high activation energy for the amorphous (Fe_0.5Co_0.5)₉₀Zr₁₀ alloy were ascribed to the highly packed structure of the metal-metal type amorphous alloy.     

K2LaBr5∶Pr晶体的生长及发光性能研究

通过高温固相法合成Pr³⁺不同掺杂浓度的K₂LaBr₅多晶料,采用垂直坩埚下降法生长出K₂LaBr₅∶Pr单晶,并对晶体进行一系列加工,得到ø12 mm×5 mm的圆柱透明晶体。该晶体属于正交晶系,晶胞参数为a=1.336 0 nm,b=0.992 7 nm,c=0.846 2 nm,Z=4,晶体密度为3.908 g/cm³,熔点为607 ℃。测试了该晶体的X射线粉末衍射、X射线激发发射光谱、光致发光光谱、透过率等。在紫外光以及X射线的激发下,K₂LaBr₅∶Pr晶体在480~750 nm波长范围内呈现蓝光(³P₁→³H₄)、绿光(³P₀→³H₄,³P₁→³H₅)、橙光(³P₁→³H₆,³P₁→³F₂)、红光(³P₀→³F₂,³P₁→³F₃)、深红光(³P₁→³F₄),及紫光(³P₀→³F₄)等多个可见波长的光输出,表明该晶体具有优良的发光性能。在X射线的激发下,在360~440 nm范围内还观察到一个宽带4f 5d-4f²发射跃迁。稳态瞬态荧光光谱分析仪测出光致衰减时间为10 μs左右,紫外可见分光光度计则测出晶体在可见光波段的透过率达到88%。     

Ca(H2PO4)2-H3PO4-K2SO4体系中石膏晶型及形貌调控

为将Ca(H₂PO₄)₂制备KH₂PO₄过程中的石膏资源化利用,以H₃PO₄与CaCO₃反应制备Ca(H₂PO₄)₂溶液,并与K₂SO₄溶液反应,进行Ca(H₂PO₄)₂-H₃PO₄-K₂SO₄体系中石膏晶型和形貌调控研究。结果表明:通过改变反应时间、反应温度、SO^2-₄过量系数和CaO含量等参数可对Ca(H₂PO₄)₂-H₃PO₄-K₂SO₄体系中石膏晶型和形貌进行调控,制得短柱状α-CaSO₄·0.5H₂O。体系在温度高于95 ℃和CaO含量为3.0%~5.0%(质量分数,下同)时形成α-CaSO₄·0.5H₂O,在CaO含量为5.5%主要形成CaSO₄·2H₂O;反应时间长于20 min和SO^2-₄过量系数大于1.4将形成K₂SO₄(CaSO₄)₅·H₂O,导致石膏晶体表面缺陷增加。本实验条件下,适宜反应条件为:反应时间10 min、反应温度95 ℃、SO^2-₄过量系数1.2和CaO含量5.0%,此条件下可制得长度42~70 μm、直径13~24 μm的短柱状α-CaSO₄·0.5H₂O,其抗折和抗压强度分别可达5.61 MPa和33.74 MPa,滤液中钾收率和脱钙率分别可达94.23%和83.80%。     

Nuclear magnetic resonance studies of alkaline earth phosphosilicate and aluminoborosilicate glasses

The ¹¹B, ²⁷Al, ²⁹Si and ³¹P magic angle spinning (MAS) NMR spectra of MO–P₂O₅, MO–SiO₂–P₂O₅ and MO(M^′₂O)–SiO₂–Al₂O₃–B₂O₃ (M=Mg, Ca, Sr and Ba, M^′=Na) glasses were examined. In binary MO–P₂O₅ (M=Ca and Mg) glasses, the distributions of the phosphate sites, P(Q_n), can be expressed by a theoretical prediction that P₂O₅ reacts quantitatively with MO. In the ternary 0.30MO–0.05SiO₂–0.65P₂O₅ glasses, the 6-coordinated silicon sites were detected, whose population increases in the order of MgOxCaO–0.05SiO₂–(0.95−x)P₂O₅ glasses, its population increases with an increase in f (=([P₂O₅]−[MO]−[B₂O₃]−[Na₂O])/[SiO₂]) and has maximum at f=9. The signal due to the 5-coordinated silicon atoms is also observed when x is smaller than 0.45. When three network-forming oxides such as SiO₂, Al₂O₃ and B₂O₃ coexist, Al₂O₃ reacts preferably with MO. The populations of 4-coordinated boron atoms, N₄, are expressed well with r/(1−r), where r=([Na₂O]−[Al₂O₃])/([Na₂O]−[Al₂O₃]+[B₂O₃]). The correlation of the Raman signal at 1210 and 1350 cm⁻¹ with the NMR signal of Si(Q₆) at −215 ppm is also seen.     

水热法合成CsxWO3纳米棒及其红外吸收性能

Cs_xWO₃纳米棒因其优异的近红外吸收性能得到研究人员的广泛关注,但目前水热法合成Cs_xWO₃纳米棒存在易形成等轴状纳米颗粒,或合成温度高,需要后续处理等问题。本文以钨酸铵((NH₄)₆ W₇O₂₄·6H₂O)、氯化铯(CsCl)、盐酸(HCl)和油胺(C₁₈H₃₇N)为原料,在220 ℃水热反应24 h合成了直径和长度分别为10~20 nm和100~250 nm的Cs_0.2WO₃纳米棒。研究了溶剂、合成路径以及HCl对Cs_0.2WO₃纳米棒的物相和形貌的影响,探讨了Cs_0.2WO₃纳米棒的形成机理,测试了Cs_0.2WO₃纳米棒的红外吸收性能。结果表明:过少和过量的HCl不利于合成Cs_0.2WO₃,改变HCl和CsCl的加入顺序,降低(NH₄)₆ W₇O₂₄·6H₂O、CsCl和HCl间的反应速率,有助于合成Cs_0.2WO₃纳米棒,且Cs_0.2WO₃纳米棒的红外吸收性能优于等轴状纳米颗粒。     

功能模板导向合成介孔三氧化钨及其光电化学性能

以钨酸(H₂WO₄)为钨前驱体,十二烷胺(DDA)为模板剂,利用模板剂的结构导向功能,合成了比表面积为57.3 m²·g^-1的介孔三氧化钨(DDA-WO₃),是未用DDA制备的非介孔WO₃(H₂WO₄-WO₃)的2.35倍。X射线衍射(XRD)结果表明,400 ℃下煅烧的DDA-WO₃是具有单斜晶型结晶孔壁的无序介孔结构。此外,400~550 ℃下煅烧的DDA-WO₃的结晶度均高于同条件的H₂WO₄-WO₃。400 ℃下的DDA-WO₃/FTO(掺氟氧化锡)在1.0 V的Ag/AgCl偏压作用下,可以产生0.18 mA·cm^-2的饱和光电流,是H₂WO₄-WO₃/FTO(0.06 mA·cm^-2)的3倍。增强的光电化学(PEC)活性主要因为DDA-WO₃/FTO的大表面积降低了低结晶度对PEC性能的不利影响,成为影响PEC活性的主要因素。500 ℃煅烧导致了DDA-WO₃/FTO介孔结构的坍塌,但高的结晶度仍然保持其优越的PEC催化活性。     

Preparation and characterization of Ni-incorporated FeS2 single crystals

Nickel-incorporated FeS₂ single crystals with various Ni compositions of Fe_0.99S₂:Ni_0.01, Fe_0.98S₂:Ni_0.02, Fe_0.96S₂:Ni_0.04, and Fe_0.9S₂:Ni_0.1 were grown by chemical vapor transport (CVT) method using ICl₃ as a transport agent. Physical properties of the Ni-incorporated FeS₂ single crystals were characterized using X-ray diffraction, Raman spectroscopy, electrical conductivity, and photoconductivity (PC) measurements. By means of the analyses of the X-ray diffraction patterns, the whole series of Ni-doped FeS₂ single crystals were determined to be single-phase and isostructural. Raman spectroscopy of the Ni-doped FeS₂ crystals was carried out at room temperature. Raman resonant peaks of the Ni-doped FeS₂ crystals demonstrate an energy red-shift behavior with respect to the increase of the dopant densities. Conductivity measurements show the resistivity of the Ni-doped FeS₂ decreased as the doping concentration of Ni is increased. Nickel is an n-type dopant, which behaves like a donor level existed near the conduction band edge of the synthetic FeS₂. On the other hand, dopant effect of nickel on the synthetic FeS₂ also destroys the photoconductive sensitivity in the photoconductivity measurements.