Oscillatory interlayer exchange coupling and its temperature dependence in [Pt/Co]3/NiO/[Co/Pt]3 multilayers with perpendicular anisotropy

Interlayer exchange coupling that oscillates between antiferromagnetic and ferromagnetic as a function of NiO thickness has been observed in [Pt(5 A)/Co(4 A)](3)/NiO(t(NiO) A)/[Co(4 A)/Pt(5 A)](3) multilayers with out-of-plane anisotropy. The period of oscillation corresponds to approximately 2 monolayers of NiO. This oscillatory behavior is possibly attributed to the antiferromagnetic ordering in NiO. The antiferromagnetic interlayer exchange coupling for the 11 A NiO layer shows an increase in coupling strength with increasing temperature, in agreement with the quantum interference model of Bruno for insulating spacer layers. A coexistence of exchange biasing and antiferromagnetic interlayer exchange coupling has been observed below T=250 K.     

4f–3d exchange coupling in Gd/X/Co (X=Pt, Cr) multilayers

We have studied the interlayer exchange coupling between Gd and Co through Pt and Cr spacers in a series of multilayers. Magnetization curves have been analyzed with a model, taking into account bilinear and biquadratic interlayer exchange couplings between Gd and Co. The interlayer exchange coupling constants have been determined as a function of the Pt or Cr spacer layer thickness.     

Investigation of ferromagnetic coupling between Co layers in a Co/Pt multilayer with perpendicular anisotropy

The coercivity of a Co/Pt multilayer with out-of-plane anisotropy can be lowered greatly if it is grown onto an ultrathin NiO underlayer . By making use of this characteristic, a series of samples glass/NiO(10 Å)/[Co(4 Å)/Pt(5 Å)]₃/Pt(x Å)/[Co(4 Å)/Pt(5 Å)]₃ with different Pt spacer thickness have been prepared to determine the ferromagnetic (FM) coupling between Co layers across the Pt layer. The measurements of major and minor hysteresis loops have shown that the FM coupling between the top and bottom Co/Pt multilayers decreases monotonically with the Pt layer thickness and disappears above the Pt layer thickness of 40 Å. This thickness of 40 Å is much larger than that in the literature. In addition to the FM coupling between the top and bottom Co/Pt multilayers across the Pt spacer, there exists a weak biquadratic coupling, which induces the broad transition of the bottom Co/Pt multilayer.     

Dependence of Interlayer AF Coupling on Ferromagnetic Layer Thickness in [Pt/Co]5/Ru/[Co/Pt]5 Multilayers

We study magnetization reversal in the interlayer coupled [Pt/Co]5/Ru/[Co/Pt]5 multilayers （MLs） by means of the measurement of extraordinary Hall effect （EHE）. Fitting experimental data to a simple model, we determine the interlayer coupling strength for various thicknesses of the ferromagnetic layers at a fixed Ru spacer thickness. It is found that the dependence of interlayer coupling strength on the Pt layer thickness is much stronger than the previous report in the ferromagnetic/nonmagnetic/ferromagnetic multilayers.     

Interlayer coupling between out-of-plane magnetized multilayers across a thin antiferromagnetic spacer

The interlayer exchange coupling between Co/Pt perpendicular-to-plane magnetized layers across a thin IrMn spacer layer was experimentally studied. In contrast to earlier studies on interlayer coupling through antiferromagnetic NiO, which revealed an oscillatory coupling behavior as a function of NiO thickness, a ferromagnetic coupling was observed here in the range of IrMn thickness between 0.6 and 1.5 nm and antiferromagnetic between 1.5 and 2.5 nm. The antiferromagnetic coupling is attributed to an orange peel magnetostatic mechanism whereas the ferromagnetic coupling is attributed to an out-of-plane polarization of the antiferromagnetic IrMn layer induced by the interfacial exchange interaction with the adjacent out-of-plane ferromagnetic layers. Measurements of hysteresis loops versus temperature show that the coupling vanishes at 510 K for t_IrMn=1 nm. This critical temperature is far below the Néel temperature of bulk IrMn, but above the blocking temperature of IrMn/Co bilayers at such thickness. Using a one-dimensional model describing a partial domain wall in the antiferromagnet, we explain the coupling in terms of an out-of-plane tilt of the Mn moments at the IrMn/(Co/Pt) interfaces yielding a weak net polarization of the IrMn. Finally, the non-oscillatory decay of the coupling was attributed to the compensated spin structure of the IrMn in the parallel to the interfaces.     

Magnetic domain configurations in exchange-coupled NiO/Co bilayer films

The magnetic domain configurations of exchange-coupled NiO/Co bilayers were investigated by magnetic force microscopy. These bilayers exhibit a well-defined uniaxial anisotropy resulting from the deposition at oblique incidence of the NiO layer. Two types of magnetic contrast are identified: (i) bipolar contrast due to 180° Néel walls in the parts of the walls which are parallel to the easy axis of magnetization, and (ii) monopolar contrast in the parts of the walls separating domains with meeting head-on magnetizations. These latter domain walls have a zigzag shape which represents a compromise between a decrease in the local density of magnetostatic energy and an increase in the wall length. The effect of the Co thickness of the shape on the domains is also discussed.     

Oscillatory ferromagnetic interlayer coupling in [Pt(5 Å)/Co(4 Å)]3/Cr(x Å)/[Co(4 Å)/Pt(12 Å)]3 multilayers with perpendicular anisotropy

Investigation has been performed on the interlayer coupling between two Co/Pt multilayers with perpendicular anisotropy separated by Cr spacers. As a function of the Cr spacer thickness, only ferromagnetic interlayer coupling has been observed between the two Co/Pt multilayers in contrast to the oscillatory interlayer coupling between ferromagnetic and antiferromagnetic observed in ferromagnetic layers with in-plane anisotropy separated by Cr spacers. It is the strength of the ferromagnetic interlayer coupling that has been observed to be oscillatory as a function of the Cr spacer thickness with a period of about 7 Å.     

Exchange couplings in magnetic films

Recent advances in the study of exchange couplings in magnetic films are introduced.To provide a comprehensive understanding of exchange coupling,we have designed different bilayers,trilayers and multilayers,such as anisotropic hard/soft-magnetic multilayer films,ferromagnetic/antiferromagnetic/ferromagnetic trilayers,[Pt/Co]/NiFe/NiO heterostructures,Co/NiO and Co/NiO/Fe trilayers on an anodic aluminum oxide(AAO) template.The exchange-coupling interaction between soft-and hard-magnetic phases,interlayer and interfacial exchange couplings and magnetic and magnetotransport properties in these magnetic films have been investigated in detail by adjusting the magnetic anisotropy of ferromagnetic layers and by changing the thickness of the spacer layer,ferromagnetic layer,and antiferromagnetic layer.Some particular physical phenomena have been observed and explained.     

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers

The realization of perpendicular magnetization and perpendicular exchange bias(PEB)in magnetic multilayers is important for the spintronic applications.NiO(t)/[Ni(4 nm)/Pt(1 nm)]₂multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO;(001)substrates.Perpendicular magnetization can be achieved when t<25 nm.Perpendicular magnetization originates from strong perpendicular magnetic anisotropy(PMA),mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers.The PMA energy constant decreases monotonically with increasing t,due to the weakening of Ni(001)orientation and a little degradation of the Ni–Pt interface.Furthermore,significant PEB can be observed though NiO layer has spin compensated(001)crystalline plane.The PEB field increases monotonically with increasing t,which is considered to result from the thickness dependent anisotropy of the NiO layer.     

Competition between domain walls and the reverse magnetization in the magnetic relaxation of a Pt/Co/Ir/Co/Pt spin switcher

A multilayer Pt/Co/Ir/Co/Pt/GaAs heterostructures demonstrates a long term (to several hours) magnetic relaxation between two stable states of the magnetization of the system. The magnetization reversal of the heterostructure layers occurs both due to the formation of nuclei of the reverse magnetization domains and as a result of their further growth by means of motion of domain walls. The competition between two these processes provides a nonexponential character of the magnetic relaxation. At 300 K, the contributions of these processes to the relaxation are commensurable, while, at temperatures lower than 200 K, the contribution of the nucleation is suppressed and the magnetic relaxation occurs as a result of motion of the domain walls.     

Temperature and set field dependence of exchange bias training effects in Co/NiO/[Co/Pt] heterostructures with orthogonal easy axes

Training effects in a new class of exchange biased ferromagnet/antiferromagnet/ferromagnet trilayers (Co/NiO/[Co/Pt]₃) with mutually orthogonal easy axes have been measured and successfully modeled. Previous experiments have demonstrated an enhanced blocking temperature as well as the ability to isothermally field tune the magnitude of the room temperature in-plane exchange bias. These effects have been attributed to the presence of the [Co/Pt] multilayer with perpendicular magnetic anisotropy, which variably pins the backside NiO domains. Here we show that the tuning of the exchange bias and the blocking temperature enhancement are highly dependent on both the temperature and the in-plane remanence of the normally out-of-plane [Co/Pt] multilayer, achieved using modest in-plane set fields. Training effects and their dependence on temperature and in-plane remanence are modeled using a thermodynamic approach. The in-plane remanence of the [Co/Pt] acts only to set the equilibrium exchange bias value and sets the scale for the blocking temperature; it has no effect on the training. We conclude that training effects occur only at the Co/NiO interface and that the relaxation towards equilibrium is confined to this interface. The field enhanced blocking temperature and isothermal tuning of exchange bias in these magnetic heterostructures with mutually orthogonal easy axes could play a role in the enhancement of exchange bias effects in future spin-valve devices. A thorough knowledge of the training effects is essential to account for the fundamental relaxation mechanisms that occur with repeated field cycling.     

Magnetic relaxation measurements of exchange biased (Pt/Co) multilayers with perpendicular anisotropy

Magnetic relaxation measurements were carried out by magneto-optical Kerr effect on exchange biased (Pt/Co)5/Pt/FeMn multilayers with perpendicular anisotropy. In these films the coercivity and the exchange bias field vary with Pt spacer thickness, and have a maximum for 0.2 nm. Hysteresis loops do not reveal important differences between the reversal for ascending and descending fields. Relaxation measurements were fitted using Fatuzzo’s model, which assumes that reversal occurs by domain nucleation and domain wall propagation. For 2 nm thick Pt spacer (no exchange bias) the reversal is dominated by domain wall propagation starting from a few nucleation centers. For 0.2 nm Pt spacer (maximum exchange bias) the reversal is strongly dominated by nucleation, and no differences between the behaviour of the ascending and descending branches can be observed. For 0.4 nm Pt spacer (weaker exchange bias) the nucleation density becomes less important, and the measurements reveal a much stronger density of nucleation centers in the descending branch.     

Perpendicular interlayer coupling in Ni80Fe20/NiO/Co trilayers

An in-plane perpendicular magnetic coupling between Ni80Fe20 and Co has been found in NiFe/NiO/Co trilayers for a NiO thickness ranging from 4 to 25 nm by magneto-optical Kerr effect and x-ray magnetic circular dichroism measurements. In the easy magnetization direction of the Co layer, the Co coercive field H(C) increases when the thickness of the NiO layer t(NiO) increases. Because of the coupling, H(C) is always larger than for NiO/Co bilayers with the same thicknesses. The saturation field of the NiFe layer H(S) decreases when t(NiO) increases, indicating a weakening of the coupling. Numerical simulations show that the presence of interface roughness combined with a small value of the NiO anisotropy can explain the observed 90 degrees coupling.     

Magnetic remanent states in antiferromagnetically coupled multilayers

In antiferromagnetically coupled multilayers with perpendicular anisotropy unusual multidomain textures can be stabilized due to a close competition between long-range demagnetization fields and short-range interlayer exchange coupling. In particular, the formation and evolution of specific topologically stable planar defects within the antiferromagnetic ground state, i.e. wall-like structures with a ferromagnetic configuration extended over a finite width, explain configurational hysteresis phenomena recently observed in [Co/Pt(Pd)]/Ru and [Co/Pt]/NiO multilayers. Within a phenomenological theory, we have analytically derived the equilibrium sizes of these “ferroband” defects as functions of the antiferromagnetic exchange, a bias magnetic field, and geometrical parameters of the multilayers. In the magnetic phase diagram, the existence region of the ferrobands mediates between the regions of patterns with sharp antiferromagnetic domain walls and regular arrays of ferromagnetic stripes. The theoretical results are supported by magnetic force microscopy images of the remanent states observed in [Co/Pt]/Ru.     

Pt插层对Co/FeMn界面的影响

采用磁控溅射的方法制备了Co/FeMn/Co多层膜,研究了Co（底部）/FeMn和FeMn/Co（顶部）界面插入Pt层后磁矩的变化情况．通过测量磁滞回线可知,Co（底部）/FeMn界面的Pt插层改变了体系的饱和磁化强度Ｍ_s,随着Co层厚度（t_Co）的增加Ｍ_s不断趋近于Co块体结构理论值1440 kA/m．这是因为Co（底部）/FeMn界面产生了净磁矩,而界面处的Pt插层可以减少这种净磁矩的产生．但是 关键词： 磁性多层膜 垂直磁各向异性 交换耦合     

Thickness-dependent magnetic properties in Pt/[Co/Ni]n multilayers with perpendicular magnetic anisotropy

We systematically investigated the Ni and Co thickness-dependent perpendicular magnetic anisotropy (PMA) coefficient, magnetic domain structures, and magnetization dynamics of Pt(5 nm)/[Co($t_{\rm Co}$)/Ni($t_{\rm Ni}$)]$_{5}$/Pt(1 nm) multilayers by combining the four standard magnetic characterization techniques. The magnetic-related hysteresis loops obtained from the field-dependent magnetization $M$ and anomalous Hall resistivity (AHR) $\rho_{{xy}}$ showed that the two serial multilayers with $t_{\rm Co} = 0.2$ nm and 0.3 nm have the optimum PMA coefficient $K_{\rm U}$ as well as the highest coercivity $H_{\rm C}$ at the Ni thickness $t_{\rm Ni}= 0.6 $ nm. Additionally, the magnetic domain structures obtained by magneto-optic Kerr effect (MOKE) microscopy also significantly depend on the thickness and $K_{\rm U}$ of the films. Furthermore, the thickness-dependent linewidth of ferromagnetic resonance is inversely proportional to $K_{\rm U}$ and $H_{\rm C}$, indicating that inhomogeneous magnetic properties dominate the linewidth. However, the intrinsic Gilbert damping constant determined by a linear fitting of the frequency-dependent linewidth does not depend on the Ni thickness and $K_{\rm U}$. Our results could help promote the PMA [Co/Ni] multilayer applications in various spintronic and spin-orbitronic devices.     

应力场对多层膜Permalloy/Cu/Co/NiO铁磁共振性质影响的理论研究

采用能量极小原理研究了Permalloy(Py)/Cu/Co/NiO多层膜结构中层间耦合强度和应力各向异性场对薄膜共振频率的影响,得到共振频率随外磁场强度变化关系式．结果发现外应力场强度和方向对系统共振频率的影响在本文中要强于层间耦合强度和交换各向异性场．外应力场方向对光学模共振频率的影响强于声学模,而外应力场强度对声学模共振频率的影响强于光学模．     

应力场对多层膜Permalloy/Cu/Co/NiO铁磁共振性质影响的理论研究

采用能量极小原理研究了Permalloy(Py)/Cu/Co/Ni O多层膜结构中层间耦合强度和应力各向异性场对薄膜共振频率的影响,得到共振频率随外磁场强度变化关系式.结果发现外应力场强度和方向对系统共振频率的影响在本文中要强于层间耦合强度和交换各向异性场,外应力场方向对光学模共振频率的影响强于声学模,而外应力场强度对声学模共振频率的影响强于光学模.     

Domain-wall pinning by local control of anisotropy in Pt/Co/Pt strips

We theoretically and experimentally analyze the pinning of a magnetic domain wall (DW) at engineered anisotropy variations in Pt/Co/Pt strips with perpendicular magnetic anisotropy. An analytical model is derived showing that a step in the anisotropy acts as an energy barrier for the DW. Quantitative measurements are performed showing that the anisotropy can be controlled by focused ion beam irradiation with Ga ions. This tool is used to experimentally study the field-induced switching of nanostrips which are locally irradiated. The boundary of the irradiated area indeed acts as a pinning barrier for the domain wall and the pinning strength increases with the anisotropy difference. Varying the thickness of the Co layer provides an additional way to tune the anisotropy, and it is shown that a thinner Co layer gives a higher starting anisotropy thereby allowing tunable DW pinning in a wider range of fields. Finally, we demonstrate that not only the anisotropy itself, but also the width of the anisotropy barrier can be tuned on the length scale of the domain wall.     

Microscopic domain structures in unidirectional and isotropic exchange-coupled NiO/NiFe bilayers

The dependence on nickel oxide thickness in unidirectional and isotropic exchange-coupled NiO/NiFe bilayer films was investigated by magnetic force microscopy to better understand exchange biasing at microscopic length scales. As the NiO thickness increased, the domain structure of unidirectional biased films formed smaller and more complex in-plane domains. By contrast, for the isotropically coupled films, large domains generally formed with increasing NiO thickness including a new cross type domain with out-of-plane magnetization orientation. The density of the cross domain is proportional to exchange biasing field, and the fact that the domain mainly originated from the strongest exchange coupled region was confirmed by imaging in an applied external field during a magnetization cycle.