High efficiency continuous-wave single-frequency Nd:YVO<Subscript>4</Subscript> ring laser under diode pumping at 880 nm

An efficient single-frequency continuous-wave Nd:YVO₄ ring laser pumped at 880 nm is presented. With compact four-mirror ring cavity and optical isolator, we obtained an output power of 14.56 W at 1064 nm, corresponding to a slope efficiency of 61.7% and an optical-to-optical efficiency of 58.4% with respect to the absorbed pump power. The stability of the output power was better than ±0.5% over two hours. At the same time, a beam quality factor of M ²≈1.2 was measured and the line width of the longitudinal mode was about 25 MHz. To the best of our knowledge, this is the highest slope efficiency and optical-to-optical efficiency in single-frequency Nd:YVO₄ ring laser.     

All-solid-state Nd:YVO<Subscript>4</Subscript> laser at 1342 nm under 914 nm diode laser pumping

A Nd:YVO₄ crystal was pumped directly into the emitting level by a laser diode at 914 nm. We achieved an output power of 1.46 W at 1342 nm for an incident pump power of 18.3 W, corresponding to an optical-to-optical conversion efficiency of 8.0%. The fluctuation of the output power was better than 2.3% in the given 30 min. The beam quality M₂ factor value was equal to 1.15 at the maximum output power.     

Single-passed passively mode-locked Nd:YVO<Subscript>4</Subscript> picosecond laser with SESAM

We report on the LD-pumped passively mode-locked solid-state laser with SESAM (semiconductor saturable absorber mirror), in which the output beam is single passed through a flat mirror. The CW mode-locking pulse at 1064 nm, with an output power of 5 W, a pulse repetition rate of 98 MHz, and a pulse width of 25.3 ps. The beam quality is M ² < 1.12 and the optical-optical efficiency is 35.7%.     

880 nm laser-diode end-pumped Nd:YVO<Subscript>4</Subscript> slab laser at 1342 nm

43.6 W near-diffraction-limited continuous-wave laser beam at 1342 nm in 880 nm laser-diode partially end-pumped Nd:YVO₄ slab laser is presented. The slope efficiency and optical-to-optical efficiency with respect to absorbed pumping power were 45.4% and 35.9%, respectively. At output power of 34.5 W, the M ² factors in unstable and stable directions were 1.3 and 1.2, respectively.     

Quasi-three-level Nd:YVO<Subscript>4</Subscript> laser operation at 914 nm under 879 nm diode laser pumping

We present experimental investigation on quasi-three-level Nd:YVO₄ laser operation at 914 nm under 879 nm diode pumping directly into emitting level. A maximal output power of 3.0 W under an absorbed pump power of 13.4 W was got, corresponding to an optical conversion efficiency of 22.4% and a slope efficiency of 40.3%. To the best of our knowledge, this is the first report on a Nd:YVO₄ laser at 914 nm using rod-type single crystal as the gain medium and end pumped by diode directly into the emitting level.     

880 nm LD pumped passive Q-switched and mode-locked Nd:YVO<Subscript>4</Subscript> laser using a single-walled carbon nanotube saturable absorber

We report a 880 nm LD pumped passive Q-switched and mode-locked Nd:YVO₄ laser using a single-walled carbon nanotube saturable absorber (SWCNT-SA). At the pump power of 7.78 W, the average out-put power of 330 mW of Q-switched and mode-locked laser with optical conversion efficiency of 4.2% was generated. The repetition rate and pulse width of the Q-switched envelope were 33 kHz and 5.6 μs, respectively. The repetition rate and pulse energy of the mode-locked pulse within the Q-switched envelope were 80 MHz and 4.1 nJ, respectively.     

Quasi-three-level Nd:YVO<Subscript>4</Subscript> laser by diode pumping at 888 nm

We report efficient laser emission on the 914 nm ⁴ F _3/2 to ⁴ I _9/2 transition in Nd:YVO₄ under the pump with diode lasers at 888 nm for the first time. Continuous wave 6.57 W output power at 914 nm is obtained from a V-type resonator under 18.3 W of absorbed pump power; the slope efficiency with respect to the absorbed pump power was 60.6%. Moreover, intracavity frequency doubling with BiB₃O₆ (BiBO) nonlinear crystal yielded 1.77 W of deep-blue light at 457 nm with beam quality characterized by an M₂ factor of 1.25.     

Eye-safe Raman laser at 1532 nm with BaWO<Subscript>4</Subscript> crystal under direct 880 nm pumping

A highly efficient 880 nm laser diode pumped actively Q-switched Nd:YVO₄/BaWO₄ eye-safe Raman laser is demonstrated. With an absorbed pump power of 10.9 W, 1.7 W of average output power at the Stokes wave-length is generated at a PRF of 40 kHz, corresponding to a diode-to-Stokes conversion efficiency of 15.6%.     

All-solid-state CW Nd:LuVO<Subscript>4</Subscript>-LBO laser at 533 nm under direct 888 nm pumping

We report an efficient laser emission on the 1066 nm ⁴ F _3/2 to ⁴ I _11/2 transition in Nd:LuVO₄ under the pump with diode laser at 888 nm. Continuous wave (CW) 11.2 W output power at 1066 nm is obtained under 18.3 W of incident pump power; the slope efficiency with respect to the incident pump power was 71.9%. Moreover, intracavity frequency doubling with LiB₃O₅ (LBO) nonlinear crystal yielded 4.2 W of green light at 533 nm. An optical-to-optical efficiency with respect to the incident pump power was 23.0%.     

Diode-pumped Nd:YVO<Subscript>4</Subscript>/Nd:YLF laser at 488 nm

We present a laser architecture to obtain continuous-wave blue radiation at 488 nm. A 808 nm diode-pumped the Nd:YVO₄ crystal emitting at 914 nm. A part of the pump power was then absorbed by the Nd:YVO₄ crystal. The remaining was used to pump the Nd:YLiF₄ (Nd:YLF) crystal emitting at 1047 nm. Intracavity sum-frequency mixing at 914 and 1047 nm was then realized in a BiB₃O₆ (BiBO) crystal to reach the blue radiation. We obtained a continuous-wave output power of 339 mW at 488 nm with a pump laser diode emitting 18.3 W at 808 nm.     

Diode-pumped Nd:YVO<Subscript>4</Subscript> intracavity-doubled red laser at 693 nm

It is reported that efficient continuous-wave (CW) red laser generation at 693 nm in a LBO crystal at type-I phase matching direction performed with a diode-pumped Nd:YVO₄ laser. With incident pump power of 18.2 W, output power of 278 mW at 693 nm has been obtained using a 10 mm-long LBO crystal. At the output power level of 278 mW, the output stability is better than 2.9%.     

Efficient CW Nd:GdVO<Subscript>4</Subscript>-BiBO deep-blue laser at 456 nm under direct 888 nm diode laser pumping

We report an efficient laser emission on the 912 nm ⁴ F _3/2 to ⁴ I _9/2 transition in Nd:GdVO₄ under the pump with diode lasers at 888 nm. Continuous wave (CW) 4.91 W output power at 912 nm is obtained under 18.3 W of incident pump power; the slope efficiency with respect to the incident pump power was 57.5%. Moreover, intracavity frequency doubling with BiB₃O₆ (BiBO) nonlinear crystal yielded 1.33 W of deep-blue light at 456 nm.     

Adjustable picosecond pulse duration in a LD end pumped SESAM passively mode-locked Nd:YVO<Subscript>4</Subscript> laser

With adjustable pulse durations, a semiconductor saturable absorber mirror (SESAM) passively mode-locked picosecond Nd:YVO₄ laser was studied. The pulse duration was adjustable from 20 to 80 ps by using intracavity etalons of different thicknesses.     

High-power passively Q-switched Nd:YVO<Subscript>4</Subscript> UV laser at 355 nm

We report on an efficient high-power passively Q-switched UV laser at 355 nm. We take into account the second threshold criterion and the thermal-lensing effect to design and realize a compact reliable passively Q-switched Nd:YVO₄ laser with Cr⁴⁺:YAG as a saturable absorber. At an incident pump power of 16.3 W, the average output power at 1064 nm reaches 6.2 W with a pulse width of 7 ns and a pulse repetition rate of 56 kHz. Employing the developed passively Q-switched laser to perform the extra-cavity harmonic generations, the maximum average output powers at 532 nm and 355 nm are up to 2.2 W and 1.62 W, respectively.     

All-solid-state CW Nd:GdVO<Subscript>4</Subscript>-LBO red laser under direct 912 nm pumping

We report a red laser at 670.5 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1341 nm Nd:GdVO₄ laser under in-band diode pumping at 912 nm. An LBO crystal, cut for critical type I phase matching is used for second harmonic generation of the laser. At an incident pump power of 8.9 W, as high as 347 mW of CW output power at 670.5 nm is achieved. The fluctuation of the red output power was better than 3.7% in the given 30 min, and the beam quality factor M ² is 1.65.     

37 W 888-nm-pumped grown-together composite crystal YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> oscillator at 1342 nm

We report on a continuous-wave Nd:YVO₄ oscillator at 1342 nm based on the combination of a grown-together composite crystal YVO₄/Nd:YVO₄/YVO₄ and the 888 nm diode-laser direct pumping for the first time. At the absorbed pump power of 102 W, a maximum average output power of 37.2 W at 1342 nm was obtained, corresponding to an optical-optical conversion efficiency of 36.5% and a high slope efficiency of 63.0%, respectively. To the best of our knowledge, this is the highest output power ever obtained for a 1342 nm Nd:YVO₄ oscillator.     

High efficiency 1341 nm Nd:GdVO<Subscript>4</Subscript> laser in-band pumped at 912 nm

A high-efficiency 1341 nm Nd:GdVO₄ laser in-band pumped at 912 nm is demonstrated for the first time. Using an all-solid-state Nd:GdVO₄ laser operating at 912 nm as pump source, 542 mW output was obtained with 1.14 W absorbed pump power. The slope efficiency with respect to the absorbed pump power was 56.6%, and the fluctuation of the output power was better than 2.6% in the given 30 min. The beam quality factor M ₂ is 1.15.     

Continuous wave Nd:LuVO<Subscript>4</Subscript>-LBO blue laser under direct 888 nm diode laser pumping

We report the efficient blue laser at 458 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a diode pumped Nd:LuVO₄ laser on the ⁴ F _3/2 → ⁴ I _9/2 transition at 916 nm. An LiB₃O₅ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 18.2 W, as high as 1.73 W of continuous wave (CW) output power at 458 nm is achieved. The optical-to-optical conversion efficiency is up to 9.5%, and the fluctuation of the red output power was better than 3.5% in the given 30 min.     

High-pulse-stability double-end continuous-grown YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> acousto-optically Q-switched laser at high repetition rates

High pulse amplitude stability of 0.62% (rms) is achieved at 60 kHz repetition rate in fundamental mode with double-end continuous-grown YVO₄/Nd:YVO₄/YVO₄ composite crystal. The average output power and pulse peak power are 32.9 W and 27.7 kW, respectively, with 19.8 ns pulse width and 548 μJ pulse energy. The pulse amplitude stability is investigated experimentally. The stability gets improved with the decrease of repetition rate and output transmission. From theoretical analysis, the reason of pulse instability at high repetition rates is that the initial population inversion doesn’t saturate and the final population inversion doesn’t approach zero. With the decrease of repetition rate and output transmission, the final population inversion decreases and the interaction between two adjacent pulse periods is weakened. Therefore, pulse stability improves.     

Diode-pumped Nd:YVO<Subscript>4</Subscript>-LBO laser at 544 nm based on intracavity sum frequency generation

A dual-wavelength continuous-wave (CW) diode-pumped Nd:YVO₄ laser that generates simultaneous laser action at the wavelengths 914 and 1342 nm is demonstrated. A total dual-wavelength output power of 1.79 W was achieved at the incident pump power of 18.2 W. Furthermore, intracavity sum-frequency mixing at 914 and 1342 nm was then realized in a LBO crystal to reach the yellow-green range. We obtained a total CW output power of 212 mW at 544 nm.