以偶氮二异庚腈为引发剂的丙烯腈的低温溶液共聚合

以偶氮二异庚腈为引发剂, 丙烯腈、衣康酸和丙烯酸甲酯为三元共聚体系, 在二甲基亚砜中进行低温溶液共聚合, 合成了高分子量的聚丙烯腈树脂. 通过正交设计的方法研究了反应温度、单体浓度和引发剂浓度等因素对分子量和单体转化率的影响, 得出了相应的最佳工艺配方. 采用红外光谱、核磁共振和凝胶渗透色谱等方法对共聚物进行了表征. 结果表明, 降低聚合反应温度和引发剂的用量以及提高单体浓度均有利于提高共聚物的分子量, 其中引发剂浓度对分子量的影响最为显著.     

光固化阻燃单体、树脂合成及其阻燃机理研究

本文综述了过去十余年间中国科技大学施文芳教授研究组在光固化阻燃技术领域的工作成果，主要包括活性单体、稀释剂、光固化树脂配方等体系，品类有磷酸酯类单体、含磷丙烯酸酯、超支化丙烯酸酯树脂、膦酸酯类单体和树脂、丙烯酸化环状磷腈、甲基丙烯酸化三聚氰胺、含磷环氧单体等十余种。同时介绍了这些配方体系的合成、性能和应用方法，以及对其热降解、阻燃性能评价和阻燃机理的研究。     

一种新型紫外正型光刻胶成膜树脂的制备及光刻性能研究

本文合成了N-(p-羧基苯基)甲基丙烯酰胺单体,并将其与N-苯基马来酰亚胺共聚得到共聚物聚N-(p-羧基苯基)甲基丙烯酰胺共N-苯基马来酰亚胺(poly(NCMA-co-NPMI)).将此共聚物作为成膜树脂,与感光剂、溶剂等复配得到一种新型耐高温紫外正型光刻胶.本文探讨了该光刻胶的最佳配方组成和最佳光刻工艺.最佳配方组成为:15%—20%成膜树脂,4.5%—6%感光剂和70%—80%溶剂;最佳光刻工艺为:匀胶30 s(4000 rpm),前烘4 min(90℃),感度为30—35mJ/cm²,在0.2%TMAH溶液显影10 s和后烘2 min(90℃).     

水脱型UV防护油墨的制备及性能研究

通过将环氧树脂E44、丙烯酸、2-丙烯酰胺-2-甲基丙磺酸反应,合成了一种改性环氧丙烯酸树脂。将改性的环氧丙烯酸树脂作为主体树脂,复配活性单体、引发剂、助剂、填充料等进行混合、分散、研磨,制备得到热水脱膜UV防护油墨。将该树脂与其他丙烯酸树脂进行性能对比,并进一步探究不同活性单体、膜层厚度与光固化能量对防护油墨的性能影响。实验表明,该树脂具有较好的热水脱膜性能,当采用活性单体二乙二醇二甲基丙烯酸酯,膜层厚度为30?m及固化能量为1 500 mJ/cm2时,防护油墨综合性能最佳。     

一种自交联聚合物的合成及其在水显影化学增幅型负性抗蚀剂中的应用

本文引入单体MAGME合成了具有自交联作用的MAGME、苯乙烯和N(4 羟基苯基)马来酰亚胺的共聚物,并以该聚合物为基体树脂,研制了一种新型的水显影化学增幅型负性抗蚀剂,并初步研究了其光刻工艺条件.     

丙烯酸酯类吸油树脂的合成与性能研究

以丙烯酸酯、甲基丙烯酸酯为主要单体,二丙烯酸丁二醇酯为交联剂,过氧化二苯甲酰为引发剂,采用悬浮聚合方法,合成聚丙烯酸酯类高吸油树脂.研究了分散剂、引发剂、交联剂用量及单体配比等因素对树脂吸油性能的影响.结果表明,分散剂用量为单体质量的0.12%,引发剂用量为1.0%,交联剂用量为1.5%时树脂的吸油能力最佳,吸甲苯倍率可达15倍,吸汽油倍率可达10倍,吸机油倍率可达近9倍.     

高透明抗冲聚苯乙烯树脂的辐射合成与性能表征

以过氧化苯甲酰为引发剂,采用苯乙烯、甲基丙烯酸甲酯为共聚单体,先经本体自由基预聚合,再经γ辐照聚合法合成甲基丙烯酸甲酯 苯乙烯共聚物(MS)树脂.系统研究了吸收剂量和剂量率对MS树脂的分子量及其分布的影响,同时研究了树脂的化学结构、热性能、透过率和力学性能.结果表明,辐射合成的MS树脂是一种无规共聚物,具有很好的光学性能,较好的韧性和强度.     

微波协同强酸性大孔树脂催化合成肉桂酸正丙酯的研究

研究了微波辐射强酸性大孔树脂催化合成肉桂酸正丙酯的合成工艺.通过优化合成工艺得到了最佳工艺条件,肉桂酸0.01mol,酸醇摩尔比1:5,催化剂为CAT 600树脂,催化剂用量为反应物质量的30%,微波功率400W,反应时间30min,产率达93.68%.催化剂可再生循环使用,催化性能稳定.     

PAAM高吸水树脂反相悬浮聚合

采用反相悬浮聚合法,通过部分中和丙烯酸与丙烯酰胺共聚制备了聚(丙烯酸-丙烯酰胺)(PAAM)高吸水树脂,讨论了聚合过程主要影响因素对其吸液性能的影响,并对其进行了FTIR、TGA测试,得到最佳的合成工艺配方:单体质量浓度为30%,中和度N为75%,丙烯酸与丙烯酰胺的摩尔比为7∶3,交联剂、引发剂和分散剂质量浓度分别为0.065%、0.7%和0.5%(相对于单体总质量),单体溶液的滴加速度为2～3mL/min,聚合温度和时间分别为70℃和1.5h。此时在蒸馏水、0.9%NaCl溶液%(wt)中最大吸水倍率分别为Qw=1300g/g、Qs=93g/g(Qw为蒸馏水中吸水倍率,Qs为0.9%NaCl溶液中的吸水倍率,下同),树脂在320℃之前都是比较稳定的,可以适应较高的使用温度。     

互贯离子交换树脂的研究

本文研究了互贯树脂的交联度、两网的重量比与珠体膨胀度的关系;以及第三单体、合成工艺对树脂强度的影响,从而解决了互贯树脂耐疲劳强度问题。     

193 nm深紫外光刻胶用成膜树脂的研究进展

本文综述了用于193 nm深紫外光刻胶的主体成膜树脂的种类及常用合成单体的研究进展,包括聚(甲基)丙烯酸酯体系、环烯烃-马来酸酐共聚物(COMA)体系、乙烯醚-马来酸酐共聚物(VEMA)体系、降冰片烯加成聚合物体系、环化聚合物体系、有机-无机杂化树脂体系以及光致产酸剂(PAG)接枝聚合物主链型等,并分析了目前关于曝光、分辨率和抗蚀刻性能方面存在的问题及未来的发展方向。     

Pyrromethene dye sensitized photopolymer—photochemical behavior in polymer matrix and application to photoresist for printed circuit board

The photochemical behavior of the visible light initiating system that consists of a sensitizing dye, 2,6‐diethyl‐8‐phenyl‐1,3,5,7‐tetramethylpyrromethene BF₂ complex (EPP), and a photoacid generator, N‐trifluoromethylsulfonyloxy‐1,8‐naphthalimide (NIOTf), was studied mainly by means of absorption and fluorescence spectrometry not in solution but in a polymer matrix which is a closer medium to the one currently employed in the field of photoresists. Excited singlet electron transfer from EPP to NIOTf was considered as the main reaction pathway in this system. The EPP/NIOTf system was applied to a photoresist for printed circuit board with an appropriate binder polymer which contains an acetal protection group. A pattern profile of the photoresist was exceedingly affected by the amount of photogenerated acids, their diffusion, and amine in the atmosphere. Finally, by controlling exposure energy and the post‐exposure bake (PEB) process, a photoresist with a high resolution (8 µm line and space) was obtained under argon ion laser irradiation. Copyright © 2006 John Wiley & Sons, Ltd.     

用于浸没式工艺的光刻胶研究进展

浸没式光刻技术是在原干法光刻的基础上采用高折射率浸没液体取代原来空气的空间,从而提高光刻分辨率的一种先进技术.此项技术的实际应用,为当前IC产业的飞速发展起到了关键的作用.本文概述了浸没式光刻技术的发展历程和浸没式光刻胶遇到的挑战及要求;对浸没式光刻胶主体树脂、光致产酸剂及添加剂的研究进展进行了综述;最后对浸没式光刻胶的研究发展方向作了进一步的探讨及初步预测.     

Azide-Containing Phenolic Resin as a Negative Deep Uv Resist

A negative photoresist has been developed by partial esterification of poly(p-hydroxystyrene) with p-azidobenzenesulfonyl chloride. About 10% of esterification is sufficient to sensitize the polymer to light in the wavelength region between 240 and 300 nm. The dose required to insolubilize the polymer was 80 mJ/cm². The resolution capability is not as high as expected because of the swelling of photoinsolubilized resist films in an aqueous alkaline developer.     

RAFT聚合法合成甲基丙烯酸酯共聚物及其在负性光致抗蚀剂中的应用

以甲基丙烯酸(MAA)、甲基丙烯酸苄基酯(BZMA)、甲基丙烯酸羟乙酯(HEMA)和丙烯酸正丁酯(BA)为共聚单体,偶氮二异丁腈(AIBN)为引发剂,2-(十二烷基三硫代碳酸酯基)-2-甲基丙酸(DMP)为链转移试剂,采用可逆加成-断裂链转移聚合(RAFT)制备了甲基丙烯酸酯共聚物(PMBBH)。利用傅立叶红外光谱(FT-IR)、核磁共振氢谱(¹HNMR)和凝胶渗透色谱(GPC)对共聚物的结构进行了表征。以共聚物PMBBH为基体树脂制备了负性光致抗蚀剂,考察了PMBBH的分子量对光致抗蚀剂分辨率的影响。结果表明,以数均分子量为5.45×10³ g/mol,重均分子量为7.79×10³ g/mol的PMBBH-2作为基体树脂时,该光致抗蚀剂得到的图像轮廓清晰,图形分辨率可达50 μm。     

Preparation and properties of conductive silver/photosensitive polyimide nanocomposites

A new electrically conductive photoresist has been developed. It is based on the dispersion of silver nanoflakes in a negative‐tone photosensitive polyimide (PSPI) precursor. 2‐Mercaptopropionic acid was used as the surfactant to modify the silver nanoflake surface for the dispersion of silver nanoflakes in the polymer. The silver/PSPI nanocomposites showed electrical conductivity at a low silver content of 10 wt %. The electrical conductivity of the silver/PSPI nanocomposites ranged from 10 to 10⁴ S/cm, which was dependent on the silver weight fraction in the resist formulation. Patterns with a resolution of 30 μm were obtained from the silver/PSPI nanocomposites. The silver/PSPI nanocomposites had excellent thermal properties. Their glass transition temperatures were above 360 °C and thermal decomposition temperatures were over 420 °C. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 1575–1583, 2009     

Novel polymer composite to eliminate background matrix ions in matrix assisted laser desorption/ionization-mass spectrometry

Matrix-assisted laser desorption/ionization-mass spectrometry (MALDI-MS) is rarely used for the analysis of small molecules (< 700 Da) because the low m/z signal is overwhelmed by a high background of matrix ions. We have developed a solution to this problem that employs a novel polymer composite which is formed by covalently cross-linking alpha-cyano-4-hydroxycinnamic acid (HCCA) to SU-8 photoresist via cationic photo-polymerization. Since the HCCA molecules are immobilized, background noise resulting from the matrix ions is significantly reduced or eliminated. Moreover, owing to the hydrophobic surface of the polymer film, the sample spots shrink during solvent evaporation and thus the analytes can be concentrated. As a result, this polymer composite improves detection sensitivity and extends the analyzable species to the low-mass region. The covalent incorporation of HCCA with SU-8 was validated with reflectance FTIR spectroscopy, and the polymer surface was characterized with scanning electron microscopy (SEM). Using MRFA, a small peptide as a standard, 8 mg of HCCA per mL of SU-8 photoresist was found to yield the highest sensitivity and the lowest background noise. Analytes such as peptides or small organic molecules were further examined on this composite surface and no analyte degradation was observed. In a trial of peptide mass fingerprinting of cytochrome c on the composite substrate, the inclusion of low m/z tryptic peptides in the database search dramatically improved the protein identification probability score.     

光刻胶用底部抗反射涂层研究进展

随着微电子工业的蓬勃发展,光刻技术向着更高分辨率的方向迈进,运用底部抗反射涂层有效消除光刻技术中的驻波效应、凹缺效应,提高关键尺寸均一性和图案分辨率,引起了广大研究者的关注。本文简要介绍了光刻胶和光刻技术,底部抗反射涂层的分类、基本原理、刻蚀工艺以及其发展状况。重点对底部抗反射涂层的最新研究进展进行了总结,尤其是碱溶型底部抗反射涂层在光刻胶中的应用研究,最后对底部抗反射涂层的发展前景和方向进行了展望。