In-plane anisotropy in two-dimensional electron gas at LaAlO_3/SrTiO_3(110) interface

A systematic study of the two-dimensional electron gas at La AlO_3/SrTiO_3(110) interface reveals an anisotropy along two specific directions, [001] and 1ī0. The anisotropy becomes distinct for the interface prepared under high oxygen pressure with low carrier density. Angular dependence of magnetoresistance shows that the electron confinement is stronger along the 1ī0 direction. Gate-tunable magnetoresistance reveals a clear in-plane anisotropy of the spin–orbit coupling,and the spin relaxation mechanism along both directions belongs to D'yakonov–Perel'(DP) scenario. Moreover, in-plane anisotropic superconductivity is observed for the sample with high carrier density, the superconducting transition temperature is lower but the upper critical field is higher along the 1ī0 direction. This in-plane anisotropy could be ascribed to the anisotropic band structure along the two crystallographic directions.     

Phonon thermal transport in InAs nanowires with different size and growth directions

We investigate the phonon thermal transport properties in InAs nanowires with different size and growth directions by using nonequilibrium molecular dynamics methods. The results show a remarkable anisotropy for the thermal conductivity in InAs nanowire. It is found that the thermal conductivity along [110] growth direction is about three times larger than that along [100] or [111] direction. With the increase of temperature, the thermal conductivity along [110] direction decreases significantly. However, the thermal conductivity along other two directions is not sensitive to temperature. Moreover, we find a crossover from ballistic to ballistic-diffusive thermal transport for a certain length of InAs nanowire. A brief physical analysis of these results is given. It is suggested that the anisotropy of thermal conductivity is common for nanowires with zinc blende structures.     

Magnetostriction and anisotropy of CoxFe3xO4 (x≤0.1) single crystals

Using the strain gauge technique, the magnetostriction constants λ_[100] and λ_[111] have been measured on single crystals of Co_xFe_3-xO₄ with compositions 0.0005≤x≤0.1 in the temperature range between 100 and 300 K and using magnetic fields up to 23 kOe. The presence of Co²⁺-ions gives rise to a very large negative value of λ_[100] and a fairly large positive value of λ_[111]. A linear relationship is found between the magnetostriction constants and the cobalt concentration.Some conclusions about the anisotropic beheviour of the samples can be made, based on the magnetostriction measurements. The change of the direction of easy magnetization from [111] to [100] in the temperature range just above the Verwey transition, is illustrated and discussed. It turned out to be possible to determine an effective anisotropy constant K'₁ through a curve fitting procedure. It is found that 1n K'₁ varies linearly with T.     

Large magnetic anisotropy in single crystal us

It is shown for ferromagnetic US that an extremely large anisotropy restrains magnetic moments to 〈111〉 easy axes, resulting in a near cos θ angular dependence of the magnetization away from the 〈111〉 axes. This is further confirmed by torque measurements, which in addition show large hysteresis effects upon rotation through the hard axes. It is illustrated through torque and magnetization measurements that a near stable domain configuration can be established by field rotation through decreasing angular amplitude around a hard 〈001〉 direction. The anisotropy constant K₁(T) is estimated by computing the small angle through which the magnetization deviates from the 〈111〉 axes when a field is applied along the [001] direction.     

Anisotropy of the magnetoresistance in Gd5Si2Ge2

The observed magnetoresistance of single crystalline Gd5Si2Ge2 is negative and strongly anisotropic. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. First principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance, and that the latter is due to a significant reduction of electronic velocity in the [100] direction and the anisotropy of electrical conductivity.     

Observation of structural anisotropy and the onset of liquidlike motion during the nonthermal melting of InSb

The melting dynamics of laser excited InSb have been studied with femtosecond x-ray diffraction. These measurements observe the delayed onset of diffusive atomic motion, signaling the appearance of liquidlike dynamics. They also demonstrate that the root-mean-squared displacement in the [111] direction increases faster than in the [110] direction after the first 500 fs. This structural anisotropy indicates that the initially generated fluid differs significantly from the equilibrium liquid.     

High magnetic field properties of mixed terbium-yttrium ferrite garnets

Magnetization measurements in d.c. magnetic fields up to 180 kOe have been performed on polycrystalline specimens and on single crystals of mixed terbium-yttrium iron garnets: Tb _x Y_3–x Fe₅O₁₂ in the 4.2–300 K temperature range. On polycrystals (x=2.5; 2; 1; 0.37) the concentration dependence of both compensation point and spontaneous magnetization has been determined. In the single crystals (x=2; 1; 0.37) a strong magnetic anisotropy has been observed with a change of the easy direction of magnetization from [111] to [100] whenx decreases; abrupt field-induced transitions have been observed at low temperatures when the external field is applied along the [100] direction.     

Magnetic anisotropy in the paramagnetic phase of TbAl2

The magnetic anisotropy of a single crystal of TbAl₂ has been measured by torque magnetometry from below the Curie point up to 170 K, well into the paramagnetic phase. Within a (110) plane the torque can be described by the expression L(θ) = {P sin 2θ} H² + {Q sin 2θ + S sin 4θ} H⁴ + {T sin 4θ} H⁶, where θ is the an gle formed by the magnetization vector with a [001] axis. The first term (in H²) is interpreted as produced by arrays of defects with axial symmetry. The second (in H⁴) and third (in H⁶) terms arise from anisotropic fourth and sixth rank tensor paramagnetic susceptibilities. On the other hand if the anisotropy is described in terms of effective conventional anisotropy constants K₁ and K₂ within the temperature range 90–170 K it is found that both constants change continuously across the Curie temperature and furthermore the [111] direction remains the easy direction in the paramagnetic range. Anisotropy measurements reveal themselves as a sensitive indicator of the level of macroscopic defects in magnetic crystals.     

Spin diffusion of correlated two-spin states in a dielectric crystal

Reciprocal space measurements of spin diffusion in a single crystal of calcium fluoride (CaF2) have been extended to dipolar ordered states. The experimental results for the component of the spin diffusion rate parallel to the external field are D(parallel)(D)=29+/-3x10(-12) cm(2)/s for the [001] direction and D(parallel)(D)=33+/-4x10(-12) cm(2)/s for the [111] direction. The measured diffusion rates for dipolar order are faster than those for Zeeman order and are considerably faster than predicted by simple theoretical models. It is suggested that constructive interference in the transport of the two-spin states is responsible for this enhancement. As expected, the anisotropy in the diffusion rates is observed to be significantly less for dipolar order compared to the Zeeman case.     

Theory of the photon-drag effect inp-type germanium with a parabolic and anisotropic band-structure approximation

This paper shows that many features of the photon-drag voltage generated by illumination ofp-germanium with 10.6 μm radiation can be understood on the basis of a parabolic but anisotropic band-structure model. The group velocities of the heavy and light holes participating in the optical transitions are obtained by an analysis of the conservation laws. Since the nonequilibrium hole densities in both bands depend directly on the momentum relaxation times in the determinant equations of continuity, these times are the parameters with the strongest influence on the numerical results. The photon-drag voltage consists of components longitudinal and transverse with respect to the axis of illumination. For the longitudinal components, good agreement between our theoretical results and experimental data from the literature is achieved if the crystal is illuminated along a [100] or [111] direction. Though a transition probability independent of light polarisation has been assumed, the transverse effect (illumination along [111]) can be computed for special measuring conditions. The calculated effects of anisotropy are higher than known from experiments possibly due to the approximations used for the valence bands and the transition probability. An erratum to this article is available at .     

Comparison of the calculated electronic structures of [111] and [001] GaAs/AℓxGa1-xAs semiconductor superlattices

A theoretical comparison of the electronic structures of long-period (about 300 Å) N_GaAs×N_AℓGaAs GaAs/Aℓ_0.3Ga_0.7As superlattices grown along the [111] direction and superlattices grown along the [001] direction is presented. Almost all qualitative features of the theoretical results are in good agreement with experiments by Hayakawa et al. The observed optical transition enhancement in the [111]-oriented quantum-well structures is caused by the topological difference in the superlattices, and is only partly due to the fact that the heavy holes in the [111] superlattices have larger transverse effective masses, and therefore have larger two-dimensional valence band densities of states.     

Copper monolayer formation on platinum single crystal surfaces: Optical and electrochemical studies

The formation of a Cu monolayer on Pt(100), (110) and (111) was investigated by optical and electrochemical techniques. The adsorption isotherms as obtained by cyclic current-potential curves clearly show that the monolayer is deposited in various steps at underpotentials. Differential reflectance spectroscopy at normal incidence was used to detect structural changes of the adsorbate as the coverage increases. For Cu on Pt(110) a pronounced anisotropy in $\text{ΔR}\text{R}$was observed as the electric field vector of the linearly polarized light was rotated. From these measurements it was deduced that Cu in the submonolayer range is deposited onto Pt(110) in rows along the [11̄0] direction of the substrate. No such anisotropy was found for Cu on Pt(100) and Pt(111) and for surface oxide formation on all three low index faces of Pt. The spectral dependence of the normalized reflectance change,$\text{ΔR}\text{R}$, for the Cu monolayer on Pt(hkl) is shown and discussed.     

基于HfO2的阻变存储器中Ag导电细丝方向和浓度的第一性原理研究

采用基于密度泛函理论的第一性原理方法, 研究了基于HfO₂的阻变存储器中Ag 导电细丝浓度以及方向性. 通过计算Ag杂质5种方向模型的分波电荷态密度等势面图、形成能、 迁移势垒和分波电荷态密度最高等势面值, 发现[-111]方向最有利于Ag导电细丝的形成, 这对器件的开启电压、形成电压和开关比有很大影响. 本文基于最佳的[-111]导电细丝方向, 设计了4 种Ag 浓度结构. 计算4种Ag浓度结构的分波电荷态密度等势面图, 得出Ag浓度低于4.00 at.% 时晶胞结构中无导电细丝形成且无阻变现象. 当Ag浓度从4.00 at.%增加到4.95 at.% 时, 晶胞结构中发现有导电细丝形成, 表明Ag浓度高于4.00 at.%时, 晶胞中可以发生阻变现象. 然而, 通过进一步对比计算这两种晶胞结构中Ag的形成能、分波电荷态密度最高等势面值、总态密度与Ag的投影态密度发现, Ag浓度越大, 导电细丝却不稳定, 并且不利于提高阻变存储器的开关比. 本文的研究结果可为改善基于HfO₂的阻变存储器的性能提供一定理论指导.     

Zeeman studies of the 0.839eV emission in SI GaAs:Cr

The multi-structured zero phonon transitions of the 0.839eV emission observed in SI GaAs:Cr have been investigated by Zeeman measurements. Magnetic splittings for the directions [111], [110] and [100] as well as angular dependence studies in the (110) plane show that the centre has a symmetry axis along [111] with a small orthorhombic distortion. The emissions cannot be due to the isolated [100] Jahn-Teller distorted Cr²⁺ ions observed in magnetic resonance but to [111] centres such as the (Cr²⁺-donor) pairs as suggested by White.     

Anisotropic magnetic properties and superzone gap formation in CeGe single crystal

Single crystals of CeGe and its non-magnetic analog LaGe have been grown by the Czochralski method. The CeGe compound crystallizes in the orthorhombic FeB-type crystal structure with the space group Pnma (#62). The anisotropic magnetic properties have been investigated for well oriented single crystals by measuring the magnetic susceptibility, electrical resistivity and heat capacity. It has been found that CeGe orders antiferromagnetically at 10.5?K. Both transport and magnetic studies have revealed large anisotropy, reflecting the orthorhombic crystal structure. The magnetization data at 1.8?K reveal metamagnetic transitions along the [010] direction at 4.8 and 6.4?T and along the [100] direction at a critical field of 10.7?T, while the magnetization along the [001] direction increases linearly without any anomaly up to a field of 16?T. From the magnetic susceptibility and the magnetization measurements it has been found that the [010] direction is the easy axis of magnetization. The electrical resistivity along the three crystallographic directions exhibits an upturn at T(N), indicating superzone gap formation below T(N) in this compound. We have performed crystal electric field analysis on the magnetic susceptibility and the heat capacity data and found that the ground state is a doublet, and the energies of splitting from the ground state to the first and second excited doublet states were estimated to be 39 and 111?K, respectively.     

Effects of magnetic field on shape evolution of Fe–Co particles in a Cu matrix

The effects of magnetic field on the shape evolution of ferromagnetic fcc Fe–Co particles in Cu–0.83 at.% Fe–1.37 at.% Co alloy single crystals were examined using magnetic anisotropy measurements. The Cu–Fe–Co single crystals were aged at 993 K for 2 h to 24 h under a magnetic field of 10 T parallel to either the [001] or [011] direction. The magnetic anisotropy was examined by measuring magnetic torque around the (100) plane. It was found that the fcc Fe–Co particles are elongated in the direction parallel to the magnetic field. Furthermore, the elongation along [001] is more remarkable than that along [011]. The results are explained quantitatively by considering the minimization of the sum of the interface energy, elastic strain energy and magnetostatic energy of spheroidal particles.     

强磁场下Er2Ga5O12的磁晶各向异性

用量子理论定量计算了Er3Ga5O12在强磁场作用下,温度为42K,外磁场沿着[001],[100],[110]和[111]四个方向的磁化强度.可以看出,磁化强度随着外磁场呈很强的各向异性,而在低温弱磁场下,磁化强度和外磁场呈线性关系 关键词： 磁晶各向异性 磁化强度     

Oxygen adsorption on (110) silver

The adsorption of oxygen on a (110)Ag surface is investigated by means of Auger electron spectroscopy, LEED and low energy helium ion scattering (IS). With LEED two ordered structures, i.e. (3×1) and (2×1) were observed at oxygen exposures of 1700 L and 7000 L respectively. The oxygen signal observed by AES and IS increases monotonically with oxygen exposure. The signals can be related to absolute coverage by comparison with Δφ measurements and by the use of the LEED data. With this calibration and with theoretical scattering cross-sections the IS measurements allow the position of the adsorbed oxygen to be estimated. The observation of a strong azimuthal anisotropy of the IS signal, e.g. a large oxygen signal if the plane of scattering is parallel to the [110] direction and a relatively small oxygen signal in the [100] direction, leads to the conclusion that the oxygen is adsorbed in a bridge position between two Ag atoms of the [110] surface channels, its centre being slightly below the centres of the Ag atoms.     

Magnetic properties of A DyNi2 single crystal

Magnetic measurements have been performed on a single crystal of DyNi₂ in applied fields up to 135 kOe. In the ferromagnetic range (T_c = 25 K), the easy magnetization direction is [100] and the hardest one is [111]. Crystal field parameters have been determined from the field and temperature dependence of the magnetization measured along the three principal axes. A two-dimensional model has been used to take into account the rotation of magnetization towards the field. The deduced parameters are W = -0.8 K and x = 0.49. The corresponding anisotropy is very large: especially even a field of 135 kOe applied along a difficult magnetization axis cannot rotate the magnetization along this direction.     

Si衬底上分子束外延Ge,Si时的反射式高能电子衍射强度振荡观察

本文观察了在Si(100)和Si(111)衬底上分子束外延Si,Ge时的反射式高能电子衍射(RHEED)强度振荡现象。其振荡特性表明,外延一定厚度的缓冲层可以改善表面的平整性,较慢的生长速率或中断生长一段时间有利于外延膜晶体质量的提高。Si(100)上外延Si或Ge时,沿[100]和[110]方位观测到的振荡特性均为单原子模式,起因于表面存在双畴(2×1)再构;而Si(111)上外延Ge时,[112]方位观测到的振荡为双原子层模式,但在[110]方位观察到不均匀周期的强度振荡行为。两种衬底上保持RHEED