非聚焦电子束照射SiO2薄膜带电效应

采用考虑电子散射、俘获、输运和自洽场的三维数值模型, 模拟了低能非聚焦电子束照射接地SiO₂薄膜的带电效应. 结果表明, 由于电子的迁移和扩散, 电子会渡越散射区域产生负空间电荷分布. 空间电荷呈现在散射区域内为正, 区域外为负的交替分布特性. 对于薄膜负带电, 电子会输运至导电衬底形成泄漏电流, 其暂态过程随泄漏电流的增加趋于平衡. 而正带电暂态过程随返回二次电子的增多而趋于平衡. 在平衡态时, 负带电表面电位随薄膜厚度、陷阱密度的增大而降低, 随电子迁移率、薄膜介电常数的增大而升高;而正带电表面电位受它们影响较小.     

Analysis of microscopic parameters of surface charging in polymer caused by defocused electron beam irradiation

The relationship between microscopic parameters and polymer charging caused by defocused electron beam irradiation is investigated using a dynamic scattering-transport model. The dynamic charging process of an irradiated polymer using a defocused 30 keV electron beam is conducted. In this study, the space charge distribution with a 30 keV non-penetrating e-beam is negative and supported by some existing experimental data. The internal potential is negative, but relatively high near the surface, and it decreases to a maximum negative value at z = 6 μm and finally tend to 0 at the bottom of film. The leakage current and the surface potential behave similarly, and the secondary electron and leakage currents follow the charging equilibrium condition. The surface potential decreases with increasing beam current density, trap concentration, capture cross section, film thickness and electron–hole recombination rate, but with decreasing electron mobility and electron energy. The total charge density increases with increasing beam current density, trap concentration, capture cross section, film thickness and electron–hole recombination rate, but with decreasing electron mobility and electron energy. This study shows a comprehensive analysis of microscopic factors of surface charging characteristics in an electron-based surface microscopy and analysis.     

电子辐照下聚合物介质深层充电现象研究

空间辐射环境中,聚合物介质的深层充放电效应是威胁航天器安全的重要因素之一.文中在Chudleigh和von Berlepsch所发展的电位衰减模型基础上引入传输电流项,考虑了电子入射引起的感应电导率和感应电场的影响,提出了新的分析研究介质材料深层充电规律和特征的模型.通过该模型,分析了不同辐射条件下介质的表面电位、内部电荷与电场分布的变化,并设计实验及援引其他实验数据对模型分析结果进行验证.分析和实验结果表明,聚合物介质在深层充电过程中的平衡电位随着入射电子束流强度和介质电阻率的增加而增大,决定深层充电平 关键词： 深层充电 电荷传输模型 电子束 聚合物     

The positive charging effect of dielectric films irradiated by a focused electron beam

Space charge and surface potential profiles are investigated with numerical simulation for dielectric films of SiO₂ positively charged by a focused electron beam. By combining the Monte Carlo method and the finite difference method, the simulation is preformed with a newly developed comprehensive two-dimensional model including electron scattering, charge transport and trapping. Results show that the space charge is distributed positively, like a semi-ellipsoid, within a high-density region of electrons and holes, but negatively outside the region due to electron diffusion along the radial and beam incident directions. Simultaneously, peak positions of the positive and negative space charge densities shift outwards or downwards with electron beam irradiation. The surface potential, along the radial direction, has a nearly flat-top around the center, abruptly decreases to negative values outside the high-density region and finally increases to zero gradually. Influences of electron beam and film parameters on the surface potential profile in the equilibrium state are also shown and analyzed. Furthermore, the variation of secondary electron signal of a large-scale integration sample positively charged in scanning electron microscopic observation is simulated and validated by experiment.     

低能电子束照射接地绝缘薄膜的负带电过程

为揭示低能电子束照射接地绝缘薄膜的负带电过程及其机理,建立了同时考虑电子散射与电子输运的计算模型,综合Monte Carlo方法和有限差分法进行了数值模拟,获得了内部空间电荷、泄漏电流和表面电位随电子束照射的演化规律.结果表明,入射电子因迁移、扩散效应会超越通常的散射区域产生负空间电荷分布,并经过一定的渡越时间后到达接地基板,形成泄漏电流,负带电暂态过程则随着泄漏电流的增加而趋于平衡.在平衡状态下,泄漏电流随电子束能量和电流而增大;薄膜净负电荷量和表面电位随膜厚而增加、随电子迁移率的增大而降低,随着电子束 关键词： 绝缘薄膜 电子束照射 带电效应 数值模拟     

Electrical breakdown and high-energy electron emission under dielectric charging

A Monte-Carlo calculation model for electron transport in crystalline dielectrics charged by irradiation is improved with allowance for impact ionization and cascading processes. The electron transport in SiO ₂ is simulated for high-strength electric fields. It is found that a breakdown in a dielectric can occur in the electric field strength range 11.5–12.5 MV/cm. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 52–58, March, 2008.     

Characteristics of dielectric film charging,depending on their thickness upon electron irradiation

Basic principles of charging dielectric films on conducting substrates upon irradiation with electrons of average energy are considered. A ratio associating the equilibrium charging potential and the mean thickness of the dielectric film is calculated. The analytical expression is in good agreement with experimental results over a wide range of energies for electrons irradiating the target.     

Temperature field of dielectric films under continuous ion-beam irradiation

In the present study, we theoretically examine the formation process of the steady-state temperature field in dielectrics under irradiation with a continuous ion beam in air with allowance for the temperature dependence of thermophysical quantities. Analytical expressions for the temperature field were obtained. An interconnected system of nonlinear algebraic equations for the steady-state temperatures at the front (irradiated) and rear surfaces of the sample, and the steady-state temperature at the interface between the ion-damaged and non-damaged region was obtained; by numerical solution of this system, a nonlinear dependence of the mentioned temperatures on the characteristics of incident ion flux was revealed.     

Mechanisms of charging of insulators under irradiation with medium-energy electron beams

The electron emission and charge characteristics of a large number of massive insulators are investigated qualitatively and quantitatively. It is demonstrated that irradiation of insulators with a medium-energy continuous electron beam leads to a decrease in the equilibrium energy of incident electrons (the second critical energy) as compared to the theoretical value. The equilibrium state of charging to saturation is attained for times from several seconds to several hundred seconds depending on the irradiation current density, the electron energy, and the insulator material. The mechanisms of charging are explained in the framework of the model according to which irradiation is accompanied by the formation of a charged double layer that consists of a positively charged layer (with the thickness equal to the escape depth of secondary electrons) and a negatively charged layer (with the thickness equal to the penetration depth of primary electrons).     

An explanation of certain contradictions in the treatment of the charging dynamics of dielectric targets under the effect of electron irradiation

Explanations of contradictory results in some studies of the temporal characteristics of charging dielectric targets via the electron irradiation effect are given. Disagreement is caused by the difference in the times of the appearance of a quasi-equilibrium state of two main parameters of charging, namely, the complete coefficient of secondary electron emission and the surface electrostatic potential.     

电子辐照下聚合物介质内部放电模型研究

空间电子辐照环境中,聚合物介质充放电现象是威胁航天器安全的重要因素. 传统航天器介质充放电模型仅能分析材料充电过程,缺乏对放电前后介质电位残余情况与放电脉冲强弱的评估. 本文通过引入介质放电电导率,在数值积分 充电模型基础上建立同时描述航天器介质内部充电和放电过程的新模型,并将模型计算结果与实验数据进行比较,验证了所构建的模型. 模型分析结果表明,聚合物介质放电残余电位与放电电流脉冲宽度随着样品电阻率的增加而增大,放电电流强度随着临界电场强度和充电时间的增加而增强,其增幅随着辐照电子束流强度的增加而增大. 关键词： 放电模型 内部放电 电子辐照 航天器介质     

Study of the charge build up and transport in electron beam irradiated dielectric films

The Pulsed Electro Acoustic– PEA –method is used to perform space charge measurements in organic dielectrics subjected to electron beam irradiation as also during relaxation, under short-circuit and open-circuit conditions. A model based on GEANT 4 libraries for electron transport analysis has been developed in order to understand the behavior of space charge in space environment. Examples of measurements recorded on Polyimide films using various configurations are analyzed in the paper. A comparison between experimental data and simulated results shows that various complex phenomena are occurring simultaneously.     

The effect of contamination of dielectric target surfaces under electron irradiation

The influence of the contamination film formed under the electron bombardment of the sample surface on the conditions of experimental studies using analytical electron-probe apparatus (scanning electron microscopes, X-ray microanalyzers) is considered. The accompanying artifacts, namely the decreased effective value of the secondary electron emission coefficient and the shifted value of the second crossover energy of primary electrons are calculated.     

The Poole–Frenkel effect in a dielectric under nanosecond irradiation by an electron beam with moderate or high current density

Processes of electron trapping and detrapping determine in many respects intense processes arising in dielectric and delayed by 1–100 ns from the irradiation pulse of a high-power electron beam, such as electron emission, electric discharge in the bulk of the dielectric, flashover, and electric breakdown. A model of charged donor center ionization in a dielectric exposed to a strong electric field is constructed. The model takes into account 1) the energy spectrum of the charged donor center in the dielectric, 2) the semiclassical state density in the donor center, 3) spontaneous emission of phonons by the electron localized in the donor center, 4) increase in the kinetic energy of the electron (heating) in the external electric field, 5) electron tunneling through a potential barrier and its reflection from the barrier depending on the external field intensity, and 6) thermal fluctuations of energy of the electron localized in the donor center. The probability of charged donor center ionization in the dielectric per unit time is calculated. In weak fields, the field dependence of the ionization probability almost coincides with that for the Poole–Frenkel theory. In strong fields, the contribution of electron heating to the external electric field is the deciding factor. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 10–16, December, 2008.     

Damage of beryllium surface under irradiation with a high-current electron beam

Radiation damage of a beryllium surface by a high-current electron beam at the GSEP-3 accelerator is considered. The degree of damage of beryllium samples has been determined. The temperature fields inside the sample and the distributions of thermal stresses have been calculated. The reasons for beryllium surface cracking formation have been found. The concentrations of point defects have been calculated. The possible reasons for an increase in microhardness of the irradiated beryllium surface layer are discussed.     

A novel approach for preparing silver nanoparticles under electron beam irradiation

Silver (Ag) nanoparticles were obtained when Ag microparticles were exposed to an electron beam in a transmission electron microscope (TEM). Results from TEM characterization indicated that the morphologies of the prepared Ag nanoparticles were quasi-circular, and the sizes were mainly in the range of 5–60 nm. The effect of irradiation time (t) on size and distribution of Ag nanoparticles was investigated. It was found that the sizes of Ag nanoparticles increased with the increase of t. The bigger Ag nanoparticles were near the Ag microparticle and the smaller ones were far from it. In addition, these Ag nanoparticles were monodisperse. This approach offered a new route for preparing Ag nanoparticles under electron beam irradiation, and the forming process of Ag nanoparticles was explained by the nucleation-growth mechanism.     

Sputtering-induced nanometre hole formation in Ni3Al under intense electron beam irradiation

The irradiation damage of polycrystalline Ni₃Al thin foils of stoichiometric composition by a stationary nanoscale 200?keV field emission gun (FEG) electron probe in a FEI Tecnai F20 (S)TEM has been investigated. At current densities greater than 10⁷?A/m², nanometre holes are produced quickly with both ?001? and ?110? incident electron beam directions. EDX spectra from the irradiated volume have been collected simultaneously during the hole forming process. From the EDX results, preferential surface sputtering of aluminium from Ni₃Al has been demonstrated. To understand the underlying physical process of sputtering, modelling based on a combination of molecular dynamics and Monte Carlo simulation has been performed. It appears to reproduce faithfully the overall film sputtering and hole formation processes, but is not capable of predicting the detailed geometry of the hole. It predicts that the sputtering cross-section of Al atoms is much higher than that of Ni atoms, resulting in a very small concentration of Al at the surface. This, together with the increase of surface area during hole formation, explains the preferential Al loss observed from the specimen. Calculated sputtering rates agree well with experiment, and are of the order of magnitude of 10^?8?atoms/electron.     

Some kinetic aspects of the charging of dielectric targets by a (1–50)-keV electron beam

The electron-emission characteristics of dielectrics irradiated with electron beams with a current density of about 10^?5 A cm^?2 have been experimentally investigated. An ambiguous relationship between the secondary electron-emission properties, the charged-surface potential, and the positive and negative charges accumulated in the surface region of dielectric targets is demonstrated. The character and values of various experimentally observed time charging constants, inconsistent with a number of theoretical models and estimates, are qualitatively explained.     

Formation of aluminum island films under electron irradiation of a sapphire surface

The present paper is devoted to experimental investigation of electron-stimulated desorption from a single-crystal sapphire surface. Using Auger electron spectroscopy metallization of the sapphire surface, the character of which is dependent on the electron beam parameters, is observed under low-energy electron bombardment,. Using atomic-force microscopy, images of metal island films with a diameter of 50?C100 nm are obtained.