Electron-stimulated desorption of sodium atoms from sodium layers adsorbed on a gold film

The yield and energy distributions of sodium atoms upon their electron-stimulated desorption from sodium layers adsorbed on tungsten coated by a gold film are measured for the first time as functions of the energy of bombarding electrons, the thickness of the gold film, and the amount of adsorbed sodium. The electron-stimulated desorption channel associated with the excitation of core levels of gold is revealed for the first time.     

Temperature and concentration effects in electron-stimulated desorption of sodium atoms from sodium layers adsorbed on tungsten coated with a gold film

The yield and energy distributions of sodium atoms upon electron-stimulated desorption from sodium layers adsorbed on tungsten coated with a gold film are investigated for the first time as functions of the thickness of the gold film, the concentration of deposited sodium, and the surface temperature. It is found that the energy distributions exhibit two peaks, namely, a narrow peak with a maximum at about 0.15 eV, whose intensity continuously increases with increasing temperature, and a broad peak with a maximum at about 0.35 eV, whose intensity either decreases or remains constant with increasing temperature. It is shown that both peaks arise as a result of the same excitation, which gives rise to different channels of electron-stimulated desorption of sodium atoms. Possible mechanisms of electron-stimulated desorption and the kinetics of destruction of the surface coating are discussed.     

Electron-stimulated desorption of europium atoms from an oxidized tungsten surface

The yield of europium atoms in electron-stimulated desorption from Eu layers adsorbed on the surface of oxidized tungsten was studied with a surface-ionization detector as a function of the incident-electron energy, surface coverage by europium, and degree of tungsten oxidation. The yield of Eu atoms measured as a function of electron energy exhibits a distinct resonant character with peaks at electron energies corresponding to europium and tungsten core-level ionization energies. The peaks associated with the europium ionization reach a maximum intensity at europium coverages less than 0.1 and decrease subsequently to zero with increasing coverage, while the peaks due to tungsten ionization pass through the maximum intensity at a monolayer europium coverage. The coverage corresponding to the maximum europium atom yield grows with increasing tungsten oxidation. The results obtained are accounted for by the formation of the europium and tungsten core excitons. In the first case, the particles desorb in the reverse motion toward the surface of the oxidized tungsten; in the second, they desorb as a result of repulsion between the tungsten core exciton and the EuO molecule.     

Electron-stimulated desorption of sodium atoms initiated by their reverse motion

This paper reports on the first measurement of the yield and energy distributions of sodium atoms in electron-stimulated desorption at T = 160 K from sodium layers adsorbed on tungsten with a gold film atop. The Na atom yield has a resonant pattern with an appearance threshold of 30 eV, which can be attributed to exciton excitation in the Na 2p level. The Na yield is associated with the formation of a semiconducting Na _x Au _y film at T ∼ 300 K and sodium and gold coverages in excess of one monolayer. Sodium atoms are desorbed through Auger neutralization of Na²⁺ ions in their reverse motion toward the surface and is limited by the resonant ionization of Na atoms as they pass through the adsorbed layer of Na⁺ ions. The energy distributions of Na atoms are bell shaped with a maximum at about 0.56 eV.     

Electron-stimulated desorption of lithium atoms from oxidized molybdenum surface

The yield and energy distributions of lithium atoms upon electron-stimulated desorption from lithium layers adsorbed on the molybdenum surface coated with an oxygen monolayer have been measured as functions of the impact electron energy and lithium coverage. The measurements are performed using the time-of-flight technique and a surface ionization detector. The threshold of the electron-stimulated desorption of lithium atoms is equal to 25 eV, which is close to the ionization energy of the O 2s level. Above a threshold of 25 eV, the yield of lithium atoms linearly increases with an increase in the lithium coverage. In the coverage range from 0 to 0.45, an additional threshold is observed at an energy of 55 eV. This threshold can be associated with the ionization energy of the Li 1s level. At the electron energies above a threshold of 55 eV, as the coverage increases, the yield of lithium atoms passes through a maximum at a coverage of about 0.1. Additional thresholds for the electron-stimulated desorption of the lithium atoms are observed at electron energies of 40 and 70 eV for the coverages larger than 0.6 and 0.75, respectively. These thresholds correlate with the ionization energies of the Mo 4s and Mo 4p levels. Relatively broad peaks in the range of these thresholds indicate the resonance excitation of the bond and can be explained by the excitation of electrons toward the band of free states above the Fermi level. The mean kinetic energy of the lithium atoms is equal to several tenths of an electronvolt. At electron energies less than 55 eV, the energy distributions of lithium atoms involve one peak with a maximum at about 0.18 eV. For the lithium coverages less than 0.45 and electron energies higher than 55 eV, the second peak with a maximum at 0.25 eV appears in the energy distributions of the lithium atoms. The results obtained can be interpreted in the framework of the Auger-stimulated desorption model, in which the adsorbed lithium ions are neutralized after filling holes inside inner shells of the substrate and lithium atoms.     

Electron-stimulated desorption of potassium and cesium atoms from oxidized molybdenum surfaces

The electron-stimulated desorption (ESD) yields and energy distributions for potassium (K) and cesium (Cs) atoms have been measured from K and Cs layers adsorbed at 300 K on oxidized molybdenum surfaces with various degrees of oxidation. The measurements were carried out using a time-of-flight method and surface ionization detector. The ESD appearance threshold for K and Cs atoms is independent of the molybdenum oxidation state and is close to the oxygen 2s level ionization energy of 25 eV. Additional thresholds for both K and Cs atoms are observed at about 40 and 70 eV in ESD from layers adsorbed on an oxygen monolayer-covered molybdenum surface; they are associated with resonance processes involving Mo 4p and 4s excitations. The ESD energy distributions for K and Cs atoms consist of single peaks. The most probable kinetic energy of atoms decreases in going from cesium to potassium and with increasing adsorbed metal concentration; it lies in the energy range around 0.35 eV. The K and Cs atom ESD energy distributions from adlayers on an oxygen monolayer-covered molybdenum surface are extended toward very low kinetic energies. The data can be interpreted by means of the Auger stimulated desorption model, in which neutralization of adsorbed alkali-metal ions occurs after filling of holes created by incident electrons in the O 2s, Mo 4s or Mo 4p levels.     

Electron-stimulated desorption of cesium atoms from cesium layers adsorbed on tungsten coated by a gold film

Physics of the Solid State - The yield and energy distributions of cesium atoms escaping in electron-stimulated desorption (ESD) from cesium layers adsorbed on tungsten coated by a gold film have...     

Electron-stimulated desorption of cesium atoms from cesium layers deposited on a germanium-coated tungsten surface

The yield and energy distribution of Cs atoms from cesium layers adsorbed on germanium-coated tungsten were measured, using the time-of-flight technique with a surface-ionization-based detector, as a function of the energy of bombarding electrons, germanium film thickness, the amount of adsorbed cesium, and substrate temperature. The threshold for the appearance of Cs atoms is ～30 eV, which correlates well with the germanium 3d-level ionization energy. As the electron energy increases, the Cs atom yield passes through a broad maximum at ～120 eV. For germanium film thicknesses from 0.5 to 2 monolayers, resonance Cs yield peaks were observed at electron energies of 50 and 80 eV, which can be related to the tungsten 5p and 5s core-level ionization energies. As the cesium coverage increases, the Cs atom yield passes through a flat maximum at monolayer coverage. The energy distribution of Cs atoms follows a bell-shaped curve. With increasing cesium coverage, this curve shifts to higher energies for thin germanium films and to lower energies for thick films. The Cs energy distribution measured at a substrate temperature T = 160 K exhibits two bell-shaped peaks, namely, a narrow peak with a maximum at ～0.35 eV, associated with tungsten core-level excitation, and a broad peak with a maximum at ～0.5 eV, deriving from the excitation of the germanium 3d core level. The results obtained can be described within a model of Auger-stimulated desorption.     

Application of electron-stimulated desorption for studying adsorbed layers

After a brief discussion of the main result of the research initiated by N.I. Ionov in his laboratory using electron-stimulated desorption for studying the surface layers of tungsten, we consider in greater detail recent results on layered coatings formed on the tungsten surface upon simultaneous adsorption of sodium (or cesium) and gold atoms on this surface, as well as the effect of sputtering of samarium atoms on the (Cs + Au)/W(100) surface that has already been formed at 300 K.     

Electron-stimulated desorption of negative O? ions from the oxidized O/Ru surface

This paper reports on a study of the electron-stimulated desorption of negative oxygen ions from the O/Ru surface, which represents an additional factor responsible for the destruction of the protective oxide layer of the mirrors used in ultraviolet lithography. The cross section of degradation of the O/Ru layer due to the electron-stimulated desorption of the O⁺ and O⁻ ions and the O atoms has been found to be 1.6 × 10⁻¹⁹ cm². A comparison of the dependences of the electron-stimulated desorption yield of O⁺ and O⁻ ions on the incident electron energy E with the ionization cross section of the adsorbate core level σ _O2s (E) has revealed that the ionization of the O 2s level is the main channel of the electron-stimulated desorption of O⁻ ions.     

Energy distribution of alkali-metal atoms under electron-stimulated desorption from the surface of oxidized refractory substrates

An analysis is made of experimental data on the dependence of the energy distributions of Li, Na, and Cs atoms emitted in electron-stimulated desorption on their concentration on the surface of oxidized tungsten and molybdenum substrates.     

Electron-stimulated desorption of rare-earth metal atoms

The yield of europium and samarium atoms in electron-stimulated desorption from layers of rare-earth metals (REMs) adsorbed on the surface of oxidized tungsten has been measured as a function of the incident electron energy, surface coverage by REMs, degree of tungsten oxidation, and substrate temperature. The measurements were performed using the time-of-flight method with a surface-ionization-based detector within the substrate temperature interval 140–600 K. The yield studied as a function of electron energy has a resonance character. Overlapping resonance peaks of Sm atoms are observed at electron energies of 34 and 46 eV, and those of Eu atoms, at 36 and 41 eV. These energies correlate well with the REM 5p and 5s core-level excitation energies. The REM yield is a complex function of the REM coverage and substrate temperature. The peaks due to REM atoms are seen at low REM coverages only, and their intensity usually passes through a maximum with increasing coverage and substrate temperature. The concentration dependence of the REM atom yield is affected by the deposition of slow Ba⁺ ions, but only if they are deposited after the REM adsorption. At higher REM coverages, additional peaks are observed at electron energies of 42, 54, and 84 eV, which originate from excitation of the 5p and 5s tungsten levels and result from desorption of SmO and EuO molecules. The temperature dependence of the intensity of these peaks is explained to be due to the order-disorder phase transition. The desorption of REM atoms is the result of their reversed motion through the adsorbed REM layer, and the SmO and EuO molecules desorb due to the formation of an antibonding state between the REM oxide molecules and the tungsten ions.     

Electron-Stimulated Desorption of Sodium and Potassium Atoms from Oxidized Tungsten

Technical Physics - We have analyzed electron-stimulated desorption (ESD) of neutral sodium and potassium atoms on oxidized tungsten. We propose a model describing ESD of atoms from the oxidized...     

Resonances in the cesium atom yield in electron-stimulated desorption from tungsten coated with a germanium monolayer

The yield and energy distributions of Cs atoms emerging from cesium layers, which are adsorbed on tungsten coated with a thin germanium film (1-to 2-monolayers thick), have been measured as a function of the incident electron energy, the amount of adsorbed cesium, and the substrate temperature. The measurements were performed by the time-of-flight technique with a surface ionization detector. At low cesium coverages (Θ < 0.1), the Cs atom appearance threshold at a substrate temperature T = 160 K is ～24 eV, which correlates with the Cs 5s-level ionization energy. As the electron energy is increased, the yield passes through a broad plateau and reaches saturation. The signal intensity in the plateau region decreases gradually with increasing cesium coverage and tends to zero for Θ > 0.14. For Θ ≥ 0.15, the cesium atom appearance threshold shifts to ～30 eV, which corresponds to the Ge 3d-level ionization energy and the plateau is replaced by a resonance peak at ～38 eV, which can be identified with the ionization energy of the W 5p _3/2 level. This peak is observed only for Θ < 0.3 and T = 160 K. For Θ ≥ 0.3, there appears a resonance peak at ～50 eV, and for Θ ≥ 0.5, another resonance peak appears at ～80 eV. These peak positions correlate with the ionization energies of the W 5p _1/2 and W 5s levels, and their intensity is maximum at Θ = 1. The Cs atom energy distributions for Θ < 0.15 consist of a bell-shaped peak with a maximum at ～0.55 eV, and those for Θ ≥ 0.15 contain two nearly resolved maxima, a broad one peaking at ～0.5 eV and a narrow one at ～0.35 eV. The above results argue for the existence of three channels of Cs atom desorption. One channel involves reverse motion of the Cs²⁺ ion; another channel, neutralization of the adsorbed Cs⁺ ion following the Auger decay of a vacancy in the Ge atom; and the third channel involves desorption of a CsGe molecule as it is repelled from a W core exciton.     

Electron stimulated desorption of cesium atoms from germanium-covered tungsten

The electron stimulated desorption (ESD) yield and energy distributions for Cs atoms from cesium layers adsorbed on germanium-covered tungsten have been measured for different Ge film thicknesses, 0.25-4.75 ML (monolayer), as a function of electron energy and cesium coverage Θ. The measurements have been carried out using a time-of-flight method and surface ionization detector. In the majority of measurements Cs is adsorbed at 300 K. The appearance threshold for Cs atoms is about 30 eV, which correlates well with the Ge 3d ionization energy. As the electron energy increases the Cs atom ESD yield passes through a wide maximum at an electron energy of about 120 eV. In the Ge film thickness range from 0.5 to 2 ML, resonant Cs atom yield peaks are observed at electron energies of 50 and 80 eV that can be associated with W 5p and W 5s level excitations. As the cesium coverage increases the Cs atom yield passes through a smooth maximum at 1 ML coverage. The Cs atom ESD energy distributions are bell-shaped; they shift toward higher energies with increasing cesium coverage for thin germanium films and shift toward lower energies with increasing cesium coverage for thick germanium films. The energy distributions for ESD of Cs from a 1 ML Ge film exhibit a strong temperature dependence; at T = 160 K they consist of two bell-shaped curves: a narrow peak with a maximum at a kinetic energy of 0.35 eV and a wider peak with a maximum at a kinetic energy of 0.5 eV. The former is associated with W level excitations and the latter with a Ge 3d level excitation. These results can be interpreted in terms of the Auger stimulated desorption model.     

The temperature dependence of Eu atom yield resonances in electron-stimulated desorption from oxidized tungsten

This paper reports on the first measurement of the intensity of the resonances in the yield of europium neutrals as a function of temperature observed in electron-stimulated desorption from tungsten surfaces oxidized to different degrees and having different europium coverages. The measurements were carried out by the time-of-flight method with a surface ionization detector. The temperature dependences obtained for resonances due to europium and tungsten core level ionization differ qualitatively. The relation is reversible for temperatures below the onset of europium thermal desorption.     

Electron-stimulated desorption of sodium atoms from oxidized molybdenum

The time-of-flight technique combined with a surface-ionization-based detector has been used to investigate the yield and energy distribution of sodium atoms escaping in electron-stimulated desorption (ESD) from adlayers on the surface of molybdenum oxidized to various degrees and maintained at T=300 K as functions of incident electron energy and surface coverage by sodium. The sodium-atom ESD threshold is about 25 eV, irrespective of sodium coverage and extent of molybdenum oxidation. Molybdenum covered by an oxygen monolayer exhibits secondary thresholds at ∼40 eV and ∼70 eV, as well as low-energy tailing of the energy distributions, its extent increasing with surface coverage by sodium Θ. The most probable kinetic energies of sodium atoms are about 0.23 eV, irrespective of the degree of molybdenum oxidation and incident electron energy at Θ=0.125, and decrease to 0.17 eV as the coverage grows to Θ=0.75. The results obtained are interpreted within a model of Augerstimulated desorption, in which adsorbed sodium ions are neutralized by Auger electrons appearing as the core holes in the 2sO, 4sMo, and 4pMo levels are filled. It has been found that the appearance of secondary thresholds in ESD of neutrals, as well as the extent of their energy distributions, depend on surface coverage by the adsorbate. Fiz. Tverd. Tela (St. Petersburg) 40, 768–772 (April 1998)     

Influence of temperature on the yield of ions desorbed as a result of electron transitions: Relaxation model

A relaxation model of electron-stimulated desorption is used to investigate the influence of temperature on the yield of desorbed ions and to calculate the corresponding temperature coefficient. Experimental data on the electron-stimulated desorption of lithium and sodium ions from a tungsten surface coated with a silicon monolayer are interpreted on the basis of the theoretical results. Zh. Tekh. Fiz. 66, 109–115 (May 1997)     

Investigation of interaction between lithium and tantalum under a silicon film coating by electron-stimulated desorption technique

The electron-stimulated desorption of Li⁺ ions from lithium layers adsorbed on the tantalum surface coated with a silicon film has been investigated. The measurements are performed using a static magnetic mass spectrometer equipped with an electric field-retarding energy analyzer. The threshold of the electron-stimulated desorption of lithium ions is close to the ionization energy of the Li 1s level. The secondary thresholds are observed at energies of about 130 and 150 eV. The threshold at an energy of 130 eV is approximately 30 eV higher than the ionization energy of the Si 2p level and can be associated with the double ionization. The threshold at 150 eV can be caused by the ionization of the Si 2s level. It is demonstrated that the yield of Li⁺ ions does not correlate with the silicon amount in near-the-surface region of the tantalum ribbon and drastically increases at high annealing temperatures. The dependence of the current of Li⁺ desorption on the lithium concentration upon annealing of the tantalum ribbon at T>1800 K exhibits two maxima. The ions desorbed by electrons with energies higher than 130 and 150 eV make the largest contribution to the current of lithium ions after the annealing. The yield of lithium ions upon ionization of the Li 1s level at an energy of 55 eV is considerably lesser, but it is observed at higher concentrations of deposited lithium. The results obtained can be interpreted in the framework of the Auger-stimulated desorption model with allowance made for relaxation of the local surface field.     

Electron-stimulated cesium atom desorption from the Cs/CsAu/Au/W system

This paper reports on a continuation of the investigation of electron-stimulated Cs-atom desorption from a tungsten surface on which cesium and gold films had been adsorbed at T = 300 K. Earlier studies revealed that Cs atoms start to desorb only after more than one monolayer of gold and more than one monolayer of cesium had been deposited on the tungsten surface. In this case, a coating consisting of a gold adlayer on tungsten, a CsAu compound possessing semiconducting properties, and a cesium monolayer capping CsAu (Cs/CsAu/Au/W) is formed on the tungsten surface at 300 K. The yield of atoms from this system exhibits a resonant dependence on the incident electron energy E _e , with an appearance threshold of 57 eV and a maximum at 64 eV. In this case, Cs atoms desorb in two channels, with one of them involving Cs desorption out of the cesium monolayer, and the other, from the CsAu monolayer. The Cs yield at E _e = 64 eV has been investigated in both desorption channels, with an additional cesium coating deposited on the already formed Cs/CsAu/Au/W layered system, as well as of the effect annealing produces on the yield and energy distributions of Cs atoms. It has been demonstrated that Cs atoms evaporated at 300 K on a layered coating with a cesium monolayer atop the CsAu layer on tungsten capped with a gold adlayer, rather than reflected from the cesium monolayer or adsorbing on it, penetrate through the cesium monolayer into the bulk of CsAu even with one CsAu layer present. The desorption yield does not vary with increasing cesium concentration at 300 K, but falls off gradually at 160 K. Annealing within the temperature range 320 K ≤ T _H ≤ 400 K destroys the cesium monolayer and the one-layer CsAu coating, but the multilayer CsAu compound does not break up in this temperature range even after evaporation of the cesium monolayer. It is shown that Cs atoms escape from the multilayer CsAu compound primarily out of the top CsAu layer.