Ac-Josephson effect in YBa2Cu3O7/PbSn point contact junctions

Adjustable YBa₂Cu₃O₇/PbSn point contact Josephson junctions are exposed to a microwave field. The current voltage characteristics of the junctions show microwave-induced constant voltage steps. The power dependence of the current width of the steps is well described by the Bessel function behaviour. This clearly demonstrates the presence of macroscopic quantum effects in the new highT _c material.     

d-Wave-induced Josephson current counterflow in YBa2Cu3O7/Nb zigzag junctions

Well-defined zigzag-shaped ramp-type Josephson junctions between YBa2Cu3O7 and Nb have been studied. The magnetic field dependencies of the critical currents provide evidence for d-wave--induced alternations in the direction of the Josephson current between neighboring sides of the zigzag structure. The arrays present controllable model systems to study the influences of pi facets in high-angle high- T(c) grain boundaries. From the characteristics, we estimate a possible imaginary s-wave admixture to the order parameter of the YBa2Cu3O7 to be below 1%.     

Vortex-creep activation energy in YBa2Cu3O7/PrBa2Cu3O7 superlattices

YBa₂Cu₃O₇/PrBa₂Cu₃O₇ (YBCO/PBCO) superlattices with a different ratio of the superconducting and insulating layer thicknesses were prepared by high pressure dc sputtering. The vortex-creep activation energy U₀ was determined by analyzing the in-plane resistive transition of 200 μm wide bridges with the external magnetic field B oriented along the c axis. It was found that U₀ is proportional to the thickness of the YBCO layers, and does only weakly depend on the PBCO layer thickness, when the latter exceeds two unit cells. We observed a change in the variation of U₀ with the current I in the specimen: U₀ exhibits a plateau in the low-I region, then decreases significantly with increasing I. This behaviour is explained in terms of a crossover plastic vortex creep – elastic (collective) creep induced by the transport current.     

Macroscopic quantum tunneling in d-wave YBa2Cu3O7-delta Josephson junctions

The escape rate from the zero voltage state in a superconducting Josephson junction (JJ) is determined by the temperature, but it saturates at low temperature due to macroscopic quantum tunneling (MQT). Complications due to d-wave symmetry in a high temperature superconductor, like low energy quasiparticles and an unconventional current-phase relation, may influence the escape rate. We report, for the first time to our knowledge, the observation of MQT in a YBa(2)Cu(3)O(7-delta) grain boundary biepitaxial JJ. This proves that dissipation can be significantly reduced by a proper junction configuration, which is of significance for quantum coherence.     

Structure of grain boundaries in YBa2Cu3O7 thin-film step-edge junctions

The atomic structure of 90° [100] (or [010]) tilt grain boundaries in YBa₂Cu₃O₇ thin-film step-edge junctions and, for comparison, in the interface between a-axis and c-axis oriented YBa₂Cu₃O₇ grains is investigated by means of high-resolution transmission electron microscopy. For (100)(001)-type boundaries two different structures are found. In the first a (001) CuO₂ plane of one grain faces a (100) Y–Ba–O plane of the other grain, in the second a (001) BaO plane faces a (100) Cu–O plane. In the former structure an incomplete unit cell of YBa₂Cu₃O₇ terminates at the boundary and a smaller strain in the adjacent CuO₂ planes is detected in comparison with the latter. It is found that a combination of a partial dislocation with a 124 stacking fault is a way to accommodate the lattice mismatch between c and 3a of YBa₂Cu₃O₇ in the boundary. For a symmetric (103)(103)-type boundary a displacement of the Cu-atoms of the CuO₂ planes is found near the boundary plane. From this a redistribution of the oxygen atoms around the Y-atoms located right in the boundary plane is inferred. The possible effect of the boundary structure on the superconducting properties of YBa₂Cu₃O₇ films is discussed.     

YBa2 Cu3 O7-δ/SrNb0.01 Ti0.99 O3 p-n结的制备及其特性

采用脉冲激光沉积技术,在n型SrNb0.01Ti0.99O3(SNTO)单晶基片上生长p型YBa2Cu3O7-δ(YBCO)薄膜,制备出YBCO/SNTO p-n结.YBCO薄膜是高度c轴织构的超导薄膜,且具有良好的超导电性.YBCO/SNTO p-n结具有较好的整流特性和很好的温度与磁场稳定性.     

Anomalous proximity effect in underdoped YBa2Cu3O6+x josephson junctions

Josephson junctions were photogenerated in underdoped thin films of the YBa2Cu3O6+x family using a near-field scanning optical microscope. The observation of the Josephson effect for separations as large as 100 nm between two wires indicates the existence of an anomalously large proximity effect and shows that the underdoped insulating material in the gap of the junction is readily perturbed into the superconducting state. The critical current of the junctions was found to be consistent with the conventional Josephson relationship. This result appears to constrain the applicability of SO(5) theory to explain the phase diagram of high critical temperature superconductors.     

Interface microstructure in epitaxial YBa2Cu3Ox/PrBa2Cu3Ox/YBa2Cu3Ox ramp-type Josephson junctions

The interfaces in ramp-type YBa₂Cu₃O_x/PrBa₂Cu₃O_x/YBa₂Cu₃O_x Josephson junctions with different ramp slopes were characterized electrically and structurally. From the cross-sectional TEM images, it has been found that the epitaxy remains through all layers even on the ramp surface, providing the ramp angle is less than 45°. No big defects such as grain boundaries and secondary phases occurred at the interface. The major defects which appeared at the interface are antiphase boundaries which were formed by lattice shifts with c/3 unit between PrBa₂Cu₃O_x and YBa₂Cu₃O_x. The interface between YBa₂Cu₃O_x base-layer and PrBa₂Cu₃O_x barrier is more defective in comparison with that between PrBa₂Cu₃O_x barrier and top-layer. Alteration of the ramp slope from 10° to 45° leads to a significant increase in the density of defects near the base-YBa₂Cu₃O_x/PrBa₂Cu₃O_x interface. The average roughness of the ramp surface created by ion milling is about 10 nm, which seems insensitive to the ramp slope. The damaged ramp surface could be repaired during the subsequent deposition process, leading to a negligible interface resistance.     

Weak-link bi-epitaxial Josephson junctions in a YBa2Cu3O7−δ film on BaZrO3/CeO2/SrTiO3

A bi-epitaxial (001)YBa₂Cu₃O_7−δ /(110)BaZrO₃/(001)CeO₂ three-layer heterostructure has been grown on (100)SrTiO₃ by laser ablation. The epitaxial relations between the layers making up the heterostructure were derived from x-ray diffraction data. The I _cR_n product for the bi-epitaxial Josephson junctions thus obtained was within 1–1.5 mV for 4.2 K, and 30–60 μV for 77 K. The normal resistance R _n=(2–5 Ω) was practically independent of temperature. The magnetic field dependences of I _c had typically a clearly pronounced main maximum, followed by distorted subsequent peaks. Interaction of the Josephson ac current with self-induced electromagnetic waves at the 45° grain boundary and with external microwave radiation (f=11 GHz) produced current steps in the I-V characteristics of the bi-epitaxial junctions at the corresponding voltages. Fiz. Tverd. Tela (St. Petersburg) 39, 1732–1738 (October 1997)