Absolute wavenumber measurements of 1-0, 2-0, HF and 2-0, H35Cl,H37Cl absorption bands

Fourier absorption spectra of HCl and HF at room temperature permitted to measure 87 absolute wavenumbers. The absolute observed position of the P(6) line of the 1-0 band of HF is not in agreement with a recent heterodyne determination [3]. It is found equal to 110 725 739 ± 7.5 MHz.     

Absolute frequency measurements of the 0002-0000, 2001-0000, and 1201-0000 bands of N2O by heterodyne spectroscopy

The absolute frequencies of 39 lines in the 00⁰2-00⁰0, 20⁰1-00⁰0, and 12⁰1-00⁰0 bands of N₂O in the range 4300–4800 cm^?1 have been measured by heterodyne frequency techniques. The lines were each measured in Doppler-limited absorption, with a color-center laser as a tunable probe of the N₂O and two stabilized CO₂ lasers as reference frequencies. New rovibrational constants have been fitted to these measurements. Tables of calculated transition frequencies are given, with estimated absolute uncertainties as small as 10^?4 cm^?1. The pressure shifts of four lines have been measured, and the values fall within the range of 0 to ?2 MHz/kPa (0 to ?0.2 MHz/Torr).     

Rotation-vibration spectrum of HT: Line position measurements of the 1-0, 4-0, and 5-0 bands

Optoacoustic techniques have been used to determine the line positions of the 1-0 fundamental and 4-0 and 5-0 overtones of the HT (¹H³H) molecule with an accuracy of better than 0.01 cm⁻¹. Comparison with line positions predicted from ab initio calculations that include adiabatic, relativistic, radiative, and nonadiabatic corrections shows disagreement outside of the experimental uncertainties.     

Infra-red absorption bands 1-0, 2-0, 3-0 and 4-0 of the two isotopic species D79Br and D81Br of deuterium bromide

High resolution spectra of the 1-0, 2-0, 3-0, and 4-0 infra-red absorption bands of the two isotopic species of deuterium bromide have been recorded up to very high J values. The equilibrium molecular parameters obtained in the analysis fit the 267 observed lines within their experimental uncertainties, and give precise calculated wavenumbers for some observed chemical laser lines of these molecules.     

The Lamb-dip spectrum of the J + 1 ← J (J = 0, 1, 3-8) transitions of HCN: The nuclear hyperfine structure due to H, C, and N

The pure rotational J + 1 ← J transitions, with J = 0, 1, 3-8, of H¹³CN have been observed in the millimeter- and submillimeter-wave region using the Lamb-dip technique to resolve the hyperfine structure due to H, ¹³C, and ¹⁴N. The present observations allow us to provide for the first time the spin-rotation constant of ¹³C and the spin-spin interaction constant S₁₂ (between H and ¹³C) as well as to remarkably improve the quadrupole coupling and spin-rotation constants of ¹⁴N. In addition, a good empirical estimation of C_I(H), based on ab initio calculations, has also been provided. Furthermore, our frequencies together with previous data permit to determine the most accurate ground state rotational parameters known up to now.     

Soft X-ray appearance potential spectroscopy (SXAPS) study of TiO2(1 1 0)-1 × 2 and (0 0 1)-1 × 1 surfaces

A soft X-ray appearance potential spectroscopy (SXAPS) apparatus with high sensitivity was built to measure non-derivative spectra. SXAPS spectra (non-derivative) of Ti 2p and O 1s for TiO₂(1 1 0)-1 × 2 and (0 0 1)-1 × 1 surfaces have been measured using low incident currents (about 10 μA/cm²) and a photon counting mode. Density of empty states on Ti and O sites are deduced by self-deconvoluting the spectra. The self-deconvoluted SXAPS spectra are qualitatively similar to those measured by X-ray absorption spectroscopy (XAS). The Ti 2p_3/2 spectrum shows two strong peaks which correspond to t_2g and e_g states. For the O 1s spectrum two strong peaks near the threshold are also found which can be ascribed to O 2pπ and O 2pσ states. These results suggest that the spectra almost obey the dipole selection rule, so-called the “approximate dipole selection rule”. The SXAPS spectra of Ti 2p and O 1s for the (1 1 0) and (0 0 1) surfaces resemble qualitatively, which is consistent with the XAS results. The spectra measured on the (1 1 0)-1 × 2 surface at an incident angle of 45° off normal to the surface and on the (1 1 0) surface sputtered by Ar ions indicate that SXAPS is very sensitive to the surface electronic states.     

Adsorption, ordering, and chemistry of nitrobenzene on Si(1 0 0)-2 × 1

Surface chemistry of nitrobenzene on Si(1 0 0)-2 × 1 has been investigated using multiple internal reflection Fourier-transform infrared spectroscopy (MIR-FTIR), Auger electron spectroscopy (AES) and thermal desorption mass spectrometry. Molecular adsorption of nitrobenzene at submonolayer coverages is dominating at cryogenic temperatures (100 K). As the surface temperature is increased to 160 K, chemical reaction involving nitro group occurs, while the phenyl entity remains intact. Thus, a barrier of approximately 40.8 kJ/mol is established for the interaction of the nitro group of nitrobenzene with the Si(1 0 0)-2 × 1 surface. Further annealing of the silicon surface leads to the decomposition of nitrobenzene. The concentration of nitrogen and oxygen remains constant on a surface within the temperature interval studied here. AES studies also suggest that the majority of carbon-containing products remain bound to the surface at temperatures as high as 1000 K. The only chemical reaction leading to the release of the gaseous products is benzene formation around 670 K. The amount of benzene accounts only for a few percent of the surface species, while the rest of the phenyl groups connected to the silicon surface via a nitrogen linker remain stable even at elevated temperatures, opening an opportunity for stable surface coatings.     

First-principles study of adsorption and diffusion on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces

Using first-principles total-energy calculations, we have investigated the adsorption and diffusion of Si and Ge adatoms on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces. The dimer vacancy lines on Ge/Si(0 0 1)-(2 × 8) and the alternate S_A and rebonded S_B steps on Ge/Si(1 0 5)-(1 × 2) are found to strongly influence the adatom kinetics. On Ge/Si(0 0 1)-(2 × 8) surface, the fast diffusion path is found to be along the dimer vacancy line (DVL), reversing the diffusion anisotropy on Si(0 0 1). Also, there exists a repulsion between the adatom and the DVL, which is expected to increase the adatom density and hence island nucleation rate in between the DVLs. On Ge/Si(1 0 5)-(1 × 2) surface, the overall diffusion barrier of Si(Ge) along direction is relative fast with a barrier of ∼0.83(0.61) eV, despite of the large surface undulation. This indicates that the adatoms can rapidly diffuse up and down the (1 0 5)-faceted Ge hut island. The diffusion is also almost isotropic along [0 1 0] and directions.     

Photoemission study of the Li/Ge(1 1 1)-3 × 1 reconstruction

In this article we report our findings on the electronic structure of the Li induced Ge(1 1 1)-3 × 1 reconstruction as determined by angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and core-level spectroscopy using synchrotron radiation. The results are compared to the theoretical honeycomb-chain-channel (HCC) model for the 3 × 1 reconstruction as calculated using density functional theory (DFT). ARUPS measurements were performed in both the and directions of the 1 × 1 surface Brillouin zone at photon energies of 17 and 21.2 eV. Three surface related states were observed in the direction. In the direction, at least two surface states were seen. The calculated band structure using the single-domain HCC model for Li/Ge(1 1 1)-3 × 1 was in good agreement with experiment, allowing for the determination of the origin of the experimentally observed surface states. In the Ge 3d core-level spectra, two surface related components were identified, both at lower binding energy with respect to the Ge 3d bulk peak. Our DFT calculations of the surface core-level shifts were found to be in fair agreement with the experimental results. Finally, in contrast to the Li/Si(1 1 1)-3 × 1 case, no double bond between Ge atoms in the top layer was found.     

Measurements of pressure-induced shifts in the 1-0 and 2-0 bands of HF and in the 2-0 bands of H35Cl and H37Cl

Fourier absorption spectra of HCl and HF measured at room temperature and low pressures were found to show evidence of pressure-induced shifts of the spectral lines at gas pressures of only 10 torr. Self-induced shifts were measured for the HF 2-0 band and for the H³⁵Cl and H³⁷ 2-0 bands. There were also measured in the same spectra shifts in the HF 2-0 band due to HCl and shifts in both HCl bands due to HF, with indications of shift oscillation due to near-resonant dipole-dipole interactions between HCl and HF. Separate measurements were made of pressure-induced shifts in the HF 1-0 and 2-0 bands and in both isotopic HCl bands, using separately argon, neon, nitrogen and carbon dioxide as the perturbing gases.     

ThTiO_4~(-/0),Th_2TiO_6~(-/0)和ThTi_2O_6~(-/0)的电子结构和化学成键的密度泛函理论研究

本文采用B3LYP密度泛函理论方法,探究双核、三核掺杂钍氧簇体系ThTiO_4~(-/0)、Th_2TiO_6~(-/0)和ThTi_2O_6~(-/0)的几何构型、电子结构和化学成键等规律,并与等价电子体(TiO_2)-/0n(n=2,3)进行对比,研究掺杂效应对于掺杂体系的结构和成键等性质的影响.结果表明:掺杂钍氧簇与其等价电子体(TiO_2)-/0n(n=2,3)具有类似的键连方式.ThTiO_4~-中单电子占据的位置与Ti2O-4中单电子的所处位置类似,都是被两个金属原子共用,而Th_2 TiO_6~-,Th Ti_2O_6~-以及Ti_3O_6~-中的单电子均处于那个不含端氧的金属原子上.     

para-Sexiphenyl thin film growth on Cu(1 1 0) and Cu(1 1 0)-(2 × 1)O surfaces

We present a reflectance difference spectroscopy (RDS) study of para-sexiphenyl (p-6P) thin film growth on Cu(1 1 0) and Cu(1 1 0)-(2 × 1)O substrates. The RDS spectra show pronounced anisotropies for p-6P films formed on both substrates at room temperature, demonstrating that the molecules are uniaxially aligned within the films. Based on the RD spectra and the evolution of the optical transitions with p-6P coverage the growth mode on both substrates could be identified. From the dominating RDS feature, assigned to the lowest energy HOMO-LUMO transition, the orientation of the molecular chain can be determined. On Cu(1 1 0), the p-6P molecular chains align in the direction, i.e., along the Cu atomic rows, whereas on the Cu(1 1 0)-(2 × 1)O surface, the molecules are oriented in the orthogonal [0 0 1] direction, i.e., along the “added” Cu-O rows of the Cu(1 1 0)-(2 × 1)O surface. The energetic position and line shape of the main RDS feature differs for the two substrates and varies with p-6P coverage. This fine structure is discussed in terms of different molecular conformations, adlayer structure and vibronic replicas.     

Rotational Analysis of the 0-0 and 1-0 B-X Bands of Ga18O Molecules

The B²Σ⁺-X^{2 +} system of the ⁶⁹Ga¹⁸O and ⁷¹Ga¹⁸O molecules excited in a low-pressure arc, has been recorded in the region between 300 and 500 nm. The 0-0 and 1-0 bands of both molecular species have been rotationally analyzed and the molecular constants of involved states have been derived.     

The infrared and microwave spectra of ozone for the (0, 0, 0), (1, 0, 0), and (0, 0, 1) states

New measurements of the ozone spectrum in the microwave and 10-μm infrared regions have been made. These new lines have been fit to a three-state Hamiltonian model which includes Coriolis interactions beteen (0, 0, 1) and (1, 0, 0). The model requires additional Coriolis parameters, as well as an appreciation for the parameters which are indeterminate. Transition dipole moments have been derived from the intensities of selected infrared lines.     

Surface morphology of epitaxial lattice-matched Ba0.7Sr0.3O on Si(0 0 1) and vicinal Si(0 0 1)-4°[1 1 0] substrates

Exploring ways for self-organized structuring of insulating thin films, we investigated the possibility to produce replicas of step trains, given by a vicinal Si(0 0 1)-4°[1 1 0] surface, in layers of crystalline and perfectly lattice-matched Ba_0.7Sr_0.3O. For this purpose, we carried out high-resolution spot profile analyses in low-energy electron diffraction (SPA-LEED) both on flat Si(0 0 1) and on Si(0 0 1)-4°[1 1 0]. Oxide layers were generated by evaporating the metals in oxygen ambient pressure with the sample at room temperature. Our G(S) analysis of these mixed oxide layers reveals a strong influence of local compositional fluctuations of Sr and Ba ions and their respective scattering phases, which appears as an unphysically large variation of layer distances. Nevertheless, we are able to show that quite smooth and closed oxide films are obtained with an rms roughness of about 1 ML. These Ba_0.7Sr_0.3O films directly follow the step train of Sr-modified vicinal Si surfaces that form (1 1 3) oriented facets after adsorption of a monolayer of Sr. This proves that self-organized structuring of insulating films can indeed be an effective method.