ZnO纳米薄膜的电化学制备及其AFM形貌表征

利用恒电位电化学沉积方法在ITO导电玻璃基底上制备了纳米ZnO薄膜,并利用原子力显微镜进行了形貌表征。结果显示,当沉积电压为-0．8V时,经过30min的沉积在基底上形成了由规则排列的三角形ZnO晶粒构成的纳米薄膜。对晶粒的形成机理进行了初步的讨论。     

化学气相沉积法中SnO2一维纳米结构的控制生长

以Sn和SnO为源材料,化学气相沉积法中通过控制反应物配比及载气中的氧含量等宏观实验条件,实现了SnO2一维纳米结构的控制生长,成功获得各种不同横向尺度的SnO2纳米线、纳米带以及直径连续变化的针状纳米结构. 通过扫描电子显微镜、X射线衍射仪对不同实验条件下所制备的样品进行形貌和晶格结构表征,认为高温生长点附近锡与氧的相对含量是控制SnO2一维纳米结构生长的关键因素;并在此基础上对SnO2一维纳米结构的生长机理进行了深入的讨论.     

石墨烯纳米结构的制备及带隙调控研究

石墨烯在未来微电子学领域有极大的应用前景,但是其零带隙的特点阻碍了石墨烯在半导体领域的应用.研究发现,打开室温下可用的石墨烯带隙所需要的石墨烯纳米结构尺度在10 nm以下,这一尺度的纳米结构一方面制备比较困难,另一方面器件可承载的驱动电流较小.因此,如何实现亚10 nm石墨烯纳米结构的有效加工以及如何在有效调控带隙的基础上增大石墨烯器件可承载的驱动电流,还需要进一步的研究.本文首先研究了利用聚甲基丙烯酸甲酯/铬(PMMA/Cr)双层结构工艺,通过刻蚀时间的控制,利用电子束曝光及刻蚀工艺实现了亚10 nm石墨烯纳米结构的可控制备.同时设计并制备了单排孔石墨烯条带结构,该结构打开的带隙远大于相同特征宽度石墨烯纳米带所能打开带隙的大小.该结构在有效打开石墨烯带隙的同时,增加了石墨烯纳米结构可以承载的驱动电流,有利于石墨烯在未来微电子领域的应用.     

定向ZnO纳米钉阵列的制备及生长机理

在550 ℃下,采用化学气相沉积(CVD)法在镀Au(10 nm)的Si(100)衬底上,制备了ZnO一维纳米钉阵列结构。X射线衍射(XRD)谱图中只显示了(002)衍射峰,其半峰全宽为0.166°,表明制备的纳米钉阵列具有高度c轴择优生长取向的特点和较高的结晶质量,高分辨透射电子显微镜(HRTEM)和选区电子衍射图(SAED)谱的结果表明所得到的单根纳米钉为沿(002)生长的单晶结构;同时,对一维纳米钉阵列的生长机理进行了分析。结果表明:由于Si与ZnO之间大的晶格失配度,首先在Si表面沉积一层富Zn的ZnO_x薄膜缓冲层,然后通过VLS机理中的底端生长模式生长成为纳米钉阵列结构。     

化学气相沉积法中SnO2一维纳米结构的控制生长

以Sn和SnO为源材料，化学气相沉积法中通过控制反应物配比及载气中的氧含量等宏观实验条件，实现了SnO₂一维纳米结构的控制生长，成功获得各种不同横向尺度的SnO₂纳米线、纳米带以及直径连续变化的针状纳米结构. 通过扫描电子显微镜、X射线衍射仪对不同实验条件下所制备的样品进行形貌和晶格结构表征，认为高温生长点附近锡与氧的相对含量是控制SnO₂一维纳米结构生长的关键因素；并在此基础上对SnO₂一维纳米结构的生长机理进行了深入的讨论.     

合成温度和N2/O2流量比对碳纤维衬底上生长的SnO2纳米线形貌及场发射性能影响

采用化学气相沉积法系统研究了合成温度和N₂/O₂流量对生长在碳纤维衬底上的SnO₂纳米线形貌及场发射性能的影响规律. 利用扫描电镜(SEM)、透射电镜(TEM), X射线衍射(XRD)及能谱仪(EDS)对产物细致表征, 结果表明, SnO₂纳米线长径比随反应温度的升高而增大; 随N₂/O₂流量比值的增大先增大后变小, 场发射测试表明, 合成温度780 ℃, N₂/O₂流量比为300 : 3 时SnO₂纳米线阵列具有最佳的场发射性能, 开启电场为1.03 V/μm, 场强增加到1.68 V/μm时, 发射电流密度达0.66 mA/cm², 亮度约2300 cd/m².     

氧化锌纳米结构的制备及发光性质研究

采用化学气相沉积方法,在氩气和氧气混合气氛下制备了两种四角结构的纳米氧化锌。初始反应物为纯锌粉,反应过程中没有采用任何触媒。采用X射线衍射、扫描电子显微镜、透射电子显微镜、光致发光光谱研究了纳米产物的结构和光学性质。获得的纳米产物为高纯的纤锌矿结构氧化锌。两种氧化锌纳米产物具有三维立体的四角结构,分别为四角锥-片状结构和四角锥-线状结构,具有较大的长径比,呈典型的微/纳结构。通过对两种氧化锌纳米结构的紫外发射峰和可见发射带的对比研究,探讨了氧化锌纳米产物可见发射带的起源,以及影响其发光性质的主要因素。     

一种新的纳米结构--管状石墨锥

文章作者利用微波等离子体辅助化学气相沉积的方法在铁针尖上合成了一种新的纳米结构，并称之为管状石墨锥．管状石墨锥在外形上由多面锥体组成，其内部是同心的圆柱形石墨层，其空心的直径为几个纳米到几十个纳米．这些管状石墨层从内到外地逐渐变短，从而使得它们呈现出锥形外观．锥的顶角一般为6-7度左右，锥的尖端只有几个纳米大小，而锥的底部可达到微米量级．值得注意的是，组成管状锥体的石墨层具有惟一的手性，都表现为锯齿型。     

ZnO纳米花的制备及其性能

利用化学气相沉积法, 在铜箔上成功制备出形似自然界中刺球花的ZnO纳米花结构. 实验进一步研究了氧气和氩气流量比例分别为1:150, 1:200, 1:250和1:400时对ZnO纳米花结构和性能的影响. 结果表明, ZnO纳米花上的ZnO纳米棒的长径比随氧气氛的减少而减小; 在氧气和氩气流量比例为1:250时制备出的ZnO纳米花尺寸均匀、形貌均一、花型结构最完美. ZnO 纳米花的室温光致发光谱表明, 随着氧气氛的减少, 可见区域的发光从一个波包变成一个宽峰, 且与锌空位相关的缺陷发光峰在减弱, 与氧空位相关的缺陷发光峰在增强. 基于实验结果, 提出了一种在铜箔上制备ZnO纳米花结构的生长模型.     

ZnO一维纳米线及其异质结构的外延生长

一维纳米结构因其优异的光、电特性，在纳米电子学，光电子学器件等方面有重要的应用价值而倍受关注．在一维半导体纳米材料中，ZnO因激子束缚能大（60meV），可在室温获得高效的紫外发光而成为近年来继GaN材料后的又一研究热点．外延生长一维纳米结构ZnO及其量子阱材料除因量子尺寸效应更适宜做室温紫外发光、激光材料与器件外，还因界面和量子限制效应而具有许多新奇的光、电、和力学特性，可应用于纳米光电子学器件，传感器及存储器件，纳米尺度共振隧道结型器件和场效应晶体管的研制和开发．文章着重介绍了目前ZnO一维纳米结构制备，一维ZnO纳米异质结构和一维ZnO／Zn1-xMgxO多量子阱结构的外延生长和研究进展．     

Morphology evolution of hierarchical ZnO nanostructures modulated by supersaturation and growth temperature

Three kinds of ZnO hierarchical structures, nanocombs with tube- and needle-shaped teeth and hierarchical nanorod arrays, were successfully synthesized through the chemical vapor deposition method. Combining the experimental parameters, the microcosmic growing conditions (growth temperature and supersaturation) along the flux was discussed at length, and, based on the conclusions, three reasonable growth processes were proposed. The results and discussions were beneficial to further realize the relation between the growing behavior of the nanomaterial and microcosmic conditions, and the hierarchical nanostructures obtained were also expected to have potential applications as functional blocks in future nanodevices. Furthermore, the study of photoluminescence further indicated that the physical properties were strongly dependent on the crystal structure.      

苝四甲酸二酐有机单晶纳米结构的制备及形成机理的研究

在分子束外延(MBE)系统中, 利用物理气相沉积(PVD)的方法在阳极氧化铝(AAO)模板上制备了有机 染料分子苝四甲酸二酐(PTCDA)的不同纳米结构; 并使用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、 高分辨透射电子显微镜(HRTEM)以及选区电子衍射(SAED)技术进行了系统的研究. 结果发现, 当衬底温度(T_s)为330 ℃时得到的是纳米丝、针、带以及棒; T_s为280 ℃, 230 ℃, 180 ℃时得到的主要是纳米棒, 并且纳米棒的长度随T_s的降低而变短; T_s为50 ℃时只能得到连续的PTCDA薄膜. HRTEM以及SAED结果证实了纳米针与棒为单晶. 依据SEM结果, 提出纳米结构的生成主要受T_s以及衬底表面曲率的影响.     

Effect of substrates and anions of zinc salts on the morphology of ZnO nanostructures

The ZnO nanostructures were hydrothermally synthesized on glass and Al substrates, respectively, using zinc chloride, zinc nitrate, and zinc acetate as precursor. The as-prepared products were characterized by scanning electron microscopy (SEM) and X-ray powder diffraction (XRD). Different ZnO nanostructures were obtained, such as nanorods, nanosheets, flower-like nanostructures and so on. The effects of the substrates and anions of zinc salts on the morphologies of the resulting products have been investigated.     

The effect of morphology and doping on photoluminescence of ZnO nanostructures

In this work, optical properties of ZnO nanostructures prepared by chemical vapor deposition under different conditions were investigated. ZnO nanostructures were characterized by electron microscopy and photoluminescence. A high intensity green emission and a narrow UV emission band are observed in photoluminescence spectra of ZnO nanostructures related to the below-band-gap and band-edge that their intensities depend on the morphology of the nanostructures. It is considered that the green emission is originated from structural defects. In addition, the influence of thermal treatment and dopants such as iron and copper, on the photoluminescence (PL) properties of the ZnO nanostructures was investigated.     

One-dimensional and quasi-one-dimensional ZnO nanostructures prepared by spray-pyrolysis-assisted thermal evaporation

One-dimensional (1D) and quasi-1D ZnO nanostructures have been fabricated by a kind of new spray-pyrolysis-assisted thermal evaporation method. Pure ZnO powder serves as an evaporation source. Thus-obtained products have been characterized by X-ray diffraction (XRD) analysis, scanning electron microscope (SEM) equipped with energy dispersive X-ray spectroscopy (EDS), transmission electron microscope (TEM). The room temperature photoluminescence spectrum of these ZnO nanostructures is presented. The results show that as-grown ZnO nanomaterials have a hexagonal wurtzite crystalline structure. Besides nanosaws, nanobelts and nanowires, complex ZnO nanotrees have also been observed in synthesized products. The study provides a new simple route to construct 1D and quasi-1D ZnO nanomaterials, which can probably be extended to fabricate other oxide nanomaterials with high melting point and doped oxide nanomaterials.     

一维氧化锌纳米结构生长及器件制备研究进展

介绍了一维氧化锌(ZnO)纳米结构的形态(纳米线和纳米带等)及其特点,阐述了该结构生长及器件制备的方法,例如水热法和化学气相沉积法等. 概述了该结构在发光二极管和纳米发电机等方面的应用进展. 最后,对一维ZnO纳米结构的未来发展趋势进行了展望,并在新方法和新工艺等方面提出了一些建议. 关键词： ZnO 一维纳米结构 制备方法 光电子器件     

An easy way to controllably synthesize one-dimensional Sm B_6 topological insulator nanostructures and exploration of their field emission applications

A convenient fabrication technique for samarium hexaboride(SmB_6) nanostructures(nanowires and nanopencils) is developed, combining magnetron-sputtering and chemical vapor deposition. Both nanostructures are proven to be single crystals with cubic structure, and they both grow along the [001] direction. Formation of both nanostructures is attributed to the vapor-liquid-solid(VLS) mechanism, and the content of boron vapor is proposed to be the reason for their different morphologies at various evaporation distances. Field emission(FE) measurements show that the maximum current density of both the as-grown nanowires and nanopencils can be several hundred μA/cm~2, and their FN plots deviate only slightly from a straight line. Moreover, we prefer the generalized Schottky-Nordheim(SN) model to comprehend the difference in FE properties between the nanowires and nanopencils. The results reveal that the nonlinearity of FN plots is attributable to the effect of image potential on the FE process, which is almost independent of the morphology of the nanostructures.All the research results suggest that the SmB_6 nanostructures would have a more promising future in the FE area if their surface oxide layer was eliminated in advance.     

Morphology engineering of ZnO nanostructures

Nanosized ZnO structures were grown by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD) in the temperature range 200–500 °C at variable precursor pressure. Temperature induced evolution of the ZnO microstructure was observed, resulting in regular transformation of the material from conventional polycrystalline layers to hierarchically arranged sheaves of ZnO nanowires. The structures obtained were uniformly planarly located over the substrate and possessed as low nanowires diameter as 30–45 nm at the tips. The observed growth evolution is explained in terms of ZnO crystal planes free energy difference and growth kinetics. For comparison, the convenient growth at constant precursor pressure on Si and SiC substrates has been performed, resulting in island-type grown ZnO nanostructures. The demonstrated nanosized ZnO structures may have unique possible areas of application, which are listed here.     

Photoluminescence properties of various CVD-grown ZnO nanostructures

We have studied systematically room-temperature photoluminescence (PL) properties of many nanostructured ZnO samples grown by chemical vapour deposition (CVD). Their PL spectra consist of two emissions peaked in the ultraviolet (UV) and green regions. The relative intensity of these emissions depends on the excitation energy density, size and morphology of ZnO nanostructures. Based on the excitation-density dependence of the integrated intensity ratio of UV-to-green emission, we could classify PL spectra of ZnO nanostructures into three groups characteristic of size and morphology. Our study also reveals that with increasing excitation density, the UV-peak position shifts slightly towards longer wavelengths while the green emission around 514-520 nm is almost unchanged. This green-luminescence emission is dominant when the nanostructure sizes range from 20 to 200 nm, which is related to a large surface-to-volume ratio.