Competitive segregation of Si and P on Fe96.5Si3.5 (100) and (110)

Annealing an Fe(96.5)Si(3.5) (100)/(110) bicrystal, containing 90 ppm P, leads immediately to a strong segregation of silicon. The Si atoms, however, desegregate subsequently and are displaced by P, whose segregation enthalpy is larger than that of silicon. The corresponding surface structures formed on both faces have been studied using complementary methods: Scanning tunneling microscopy (STM) to obtain atomically resolved geometrical information and Auger electron spectroscopy (AES) for the determination of the surface composition. Si substitutes surface Fe atoms on both faces and forms ordered surface alloys, whereas P occupies hollow sites on the surface. Si and P form c(2 x 2) superstructures on the (100) surface, whereby each segregated phosphorus atom blocks in the average one silicon segregation site. The (110) surface, on the other hand, is characterized by a c(1 x 3) Si superstructure. Due to the anisotropy of this surface the P/Si exchange proceeds by the formation of silicon coverage decreasing domain boundaries within the silicon structure, which are simultaneously occupied by P atoms. Furthermore the comparison of the AES and STM derived phosphorus coverages indicates a P multilayer segregation on the (110) surface.     

Segregation and Stability in Surface Alloys: PdxRu1−x/Ru(0001) and PtxRu1−x/Ru(0001)

The stability of PdRu/Ru(0001) and PtRu/Ru(0001) surface alloys and the tendency for surface segregation of Pd and Pt subsurface guest metals in these surface alloys is studied by scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES). Atomic resolution STM imaging and AES measurements reveal that upon overgrowing the surface alloys with a 1–2 monolayer Ru film and subsequent annealing to the temperatures required for initial surface alloy formation, the Ru‐covered Pd (Pt) atoms float back to the outermost layer. The lateral distribution of these species is also essentially identical to that of the initial surface alloys, before overgrowth by Ru. In combination, this clearly demonstrates that the surface alloys represent stable surface configurations, metastable only towards entropically favored bulk dissolution, and that there is a distinct driving force for surface segregation of these species. Consequences of these data on the mechanism for surface alloy formation are discussed.     

An experimental and theoretical study of surface segregation in a Fe-6at.%Si bicrystal

The analysis of segregation phenomena in bicrystals is an important step for the understanding of combined effects of the elementary diffusion processes involved in the segregation in polycristalline systems. The segregation of Si and P in a Fe-6at.%Si bicrystal with a (100) and (110) surface has been investigated by means of AES (Auger electron spectroscopy). For these experiments the technique of a linearly increased temperature has been applied. Significant differences between the segregation kinetics at the two surfaces of the sample have been found on the one hand for the maximum coverage of P and on the other hand for the high temperature behaviour of Si. Additionally, model calculations based on the KTBIM (kinetic tight binding Ising model) have been performed to qualitatively describe the experimental results. It is shown, that the striking differences between the segregation behaviour at the two differently oriented surfaces can be explained by different segregation energies of P, whereas Si plays a minor role due to its relatively small segregation energy.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

ATR-FTIR Study of Si(110) Surface Hydrogenated in NH4F-Based Mixtures

RCA (Radio Corporation of America) cleaning has been the important and critical step in semiconductor manufacturing for more than 30 years^[1]. As the electronics devices are shrinking and gate oxide is getting thinner, stringent requirements on metallic impurities,organic contamination and surface roughness on silicon wafer after wet chemical cleaning have attracted more attention in the mechanism of wet etching processes on Si(111) and Si(100) surfaces^[2=11]. In the past few years wet chemical and electrochemical etching of Si(110) in NH₄F solutions has been studied by using scanning tunneling microscopy (STM)^[12] and attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR)^[13-14]. In the present work, we extend our study to Si(110) surface in NH₄F/HCl mixtures by using polarized attenuated total reflection FTIR (ATR-FTIR). We have compared the ex-situ ATR-FTIR results on Si(110) in various NH₄F/HCl solutions using Ge prism. Effects of potential on hydrogen-terminated structures on Si(110) surfaces have been investigated by employing in-situ electrochemical ATR-FTIR with double side polished single crystal silicon as a prism. Our ATR-FTIR spectra are correlated with the results obtained with in-situ STM.     

W(100) c(2×2)表面的STM图像

用基于第一性原理的密度泛函理论研究了W(100) c(2×2)再构表面的表面弛豫以及扫描隧道显微镜(STM)图像和衬底偏压的关系. 计算所得到的表面原子沿[-110]方向的畸变位移δ为0.027 nm, 畸变能⊿E为80.6 meV·atom-1, 表面原子的弛豫分别为-7.6%(⊿d12/d0)和+0.8%(⊿d23/d0), 功函数Φ为4.55 eV. STM图像模拟表明, 由于表面原子沿[-110]方向的位移, 会导致出现平行于[110]方向的亮暗带状条纹. STM图像中突起所对应的并不是表面或次表面的钨原子, 而是zig-zag型W 原子链中线位置; 而STM暗区对应于原子位置畸变形成的相邻zig-zag型W原子链中间区域. 当衬底负偏压时, STM针尖典型起伏高度大约在0.008-0.013 nm之间; 而当衬底正偏压时, 针尖起伏高度在0.019-0.024 nm之间变化.     

Purely site-specific chemisorption and conformation of trimethylamine on Si(100)c(4 x 2)

One of the fundamental points of interest on the Si(100) surface is how the spatial localization of electron density on the buckled silicon dimer controls the site-specific reaction toward different Lewis acid and Lewis base molecules. We have investigated the adsorption of trimethylamine (TMA) on Si(100)c(4x2) using scanning tunneling microscopy (STM) at 80 K. The adsorbed TMA appears as a triangle-shaped bright protrusion in the occupied-state STM image. The triangle-shaped protrusion is ascribed to three methyl groups in the adsorbed TMA. The center of the protrusion is located on the down atom site, which indicates that the adsorption of TMA occurs only on the down dimer atom. Thus, TMA adsorption on Si(100)c(4x2) is found to be purely site-specific on the down dimer atom and can be categorized in Lewis acid-base reaction.     

Ab-initio molecular dynamics simulation of monolayer C60 thin film on silicon (100) surface

Two dimensional band structure is calculated for a triangular lattice of C₆₀ molecules by using a mixed-basis approach in which wave functions are expanded with not only plane waves but also 1s and 2p atomic orbitals of carbon atoms. The present analysis modeling a charge transfer from Si dimers of the Si (100) surface suggests the existence of a small Fermi-surface. The resulting partial charge distribution is consistent with the recent STM observation of specific stripes, the direction of which is parallel to that of the topmost double bond of C₆₀, regardless of the intermolecular interaction. It is concluded that the orientation of C₆₀ on the Si surface is mainly determined by the direction of dimer arrays and not by the interaction between C₆₀ molecules.ACKNOWLEDGEMENT The authors are very grateful to the Institute for Supercomputing Research of RECRUIT Co. for the use of the NEC SX-2 supercomputer. Authors also thank IBM Japan and Japan IMSL Inc. for supporting them a good computer environment.     

Ultra-clean Si(111) and Si(001) Surfaces Prepared by Advanced Wet Chemical Cleaning

Wet chemical cleaning of silicon is a critical step, e.g., pre-gate clean, in the semiconductor manufacturing^[1]. For example, pre-gate oxide cleaning demands ultra-clean silicon surface with least surface roughness. It is well known that metallic infinities and roughness cause the lower breakdown voltage in gate dielectric^[2]. It has stringent requirements for ultra-clean and atomically flat silicon surface as the thickness of gate oxide is decreasing. In the present work, we have extended our study on Si(100) surface13] and extensively investigated wet chemical cleaning of Si(111) and Si(100) surfaces in NH₄F-based solutions by using scanning tunneling microscopy (STM), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS) and total reflection X-ray fluorescence spectrometry (TXRF). Surface roughness, organic contamination, metallic impurities and surface termination on the silicon surfaces after wet chemical cleaning with various NH₄F-based solutions have been determined and compared with those treated with RCA cleans, HF solutions and other industrially used solutions. Our results indicate that ultra-clean and smooth Si(111) and Si(001) surfaces are obtained by treatment with NH4F-based solutions.     

Scanning tunneling microscopic investigations of the adsorption and segregation of carbon and sulfur on nickel single crystal surfaces

The adsorption and segregation of carbon or sulfur on Ni single crystal surfaces have been investigated by scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES). Different adsorbate(segregate)-induced surface modifications have been detected in dependence on the original Ni surface orientation and the kind of nonmetal atoms: i) Adsorption of carbon from ethylene on Ni(111) at 6.7×10^–4 Pa and 1000K leads to the epitaxial growth of a graphitic carbon monolayer which exhibits the structure of the hexagonal basal plane of graphite. However, as is found for highly oriented pyrolytic graphite (HOPG), only three of six carbon atoms of the (0001) graphite plane are imaged by STM. In contrast, on Ni(771) at 663 to 1000 K carbon islands have been formed but no graphite monolayer formation is detected. This behavior can be understood by considering the aspects that no large-area epitaxy between the graphite basal plane and the Ni(110) terraces exists and that the surface carbon activity was too low to initiate substrate restructuring. ii) Segregation of sulfur (from the Ni bulk containing 5 to 7 ppm S) on Ni(110) at 1043K and _s0.4 ML initiates the growth of sulfur islands which show a c(2×2)-S overlayer structure, whereas on Ni(111) at 823K and _s0.2 ML (average value) a reconstructed surface phase is forming which can be described as an adsorbed two-dimensional sulfide Ni₂S.     

Characterization of Au-Rh and Au-Mo bimetallic nanoclusters on TiO2(110): A comparative study

Gold-rhodium and gold-molybdenum layers were prepared on a nearly stoichiometric titania and characterized by LEIS, XPS and STM. In the Au-Rh bimetallic system, Rh atoms impinged onto Au clusters pregrown on TiO₂(110) became covered by gold atoms. In contrast, Mo caused the disruption of gold nanoparticles.     

Interface diffusion and chemical reaction of PZT layer/Si (111) sample during the annealing treatment in air

The interface diffusion and chemical reaction between a PZT (PbZrxTi1-xO3) layer and a Si(111) substrate during the annealing treatment in air have been studied by using XPS (X-Ray Photoelectron Spectroscopy) and AES (Auger Electron Spectroscopy). The results indicate that the Ti element in the PZT precursor reacted with residual carbon and silicon, diffused from the Si substrate, to form TiCx, TiSix species in the PZT layer during the thermal treatment. A great interface diffusion and chemical reaction took place on the interface of PZT Si also. The silicon atoms diffused from silicon substrate onto the surface of PZT layer. The oxygen atoms, which came from air, diffused into silicon substrate also and reacted with Si atoms to form a SiO2 interlayer between the PZT layer and the Si (111) substrate. The thickness of SiO2 interlayer was proportional to the square root of treatment time. The formation of the SiO2 interlayer was governed by the diffusion of oxygen in the PZT layer at low annealing tempera     

水在HfO2(111)和(110)表面的吸附与解离

运用广义梯度近似密度泛函理论方法(GGA-PW91)结合周期平板模型, 研究水分子在二氧化铪(111)和(110)表面不同吸附位置在不同覆盖度下的吸附行为. 通过比较不同吸附位的吸附能和几何构型参数发现:(111)和(110)表面铪原子(top 位)是活性吸附位. 水分子与表面的吸附能值随覆盖度的变化影响较小. 在(111)和(110)表面, 水分子都倾向以氧端与表面铪原子相互作用. 同时也计算了羟基、氧和氢在表面的吸附, Mulliken 电荷布居, 态密度及部分频率. 结果表明, 在两种表面羟基以氧端与表面铪相互作用, 氧原子与表面铪和氧原子同时成键, 而氢原子直接与表面氧原子相互作用形成羟基. 通过过渡态搜索, 水分子在(111)和(110)表面发生解离, 反应能垒分别为9.7和17.3 kJ·mol^-1, 且放热为59.9和47.6 kJ·mol^-1.     

Structure and reactivity of intermediates. N-overlayer on Pd(100), Rh(100) and Pt-Rh(110) and its reaction with H2

Rh(100), Pt(100), and Pt-Rh(100) surfaces are inert for the dissociative adsorption of N₂, but they are active for the catalytic reaction of NO with H₂ During the reaction on Rh(100) and Pt-Rh(100) surfaces, N atoms are accumulated by making a c(2x2)-N overlayer, but no accumulation of N atoms occurs on Pt(100) surface. The fact that N atoms on the Pt-Rh(100) surface gives the c(2x2) structure indicates that the N atoms have equal affinity to Pt and Rh on the alloy surface. When the c(2x2)-N surface was exposed to H₂ of 10^-7 to 10^-8 Torr, a prominent loss peak being assignable to NH_x appeared at 3200 – 3240 cm^-1 at around 400 K. The in-situ HREELS study proved that NH are prominent species which are formed during the hydrogenation of the c(2x2)-N, that is, a quasi-equilibrium of N + 1/2 H₂ - NH is established. When a clean Pt-Rh(100) (Pt/Rh = 1/3) alloy surface is exposed to NO at about 440 K, the LEED pattern changes sequentially as (1x1) → c(2x2) → c(2x2) + p(3x1) → p(3x1), where the c(2x2) pattern appears instantaneously on the alloy surface of any Pt/Rh ratio but the p(3x1) pattern accompanies a certain characteristic interval times being responsible to the segregation of Rh. The p(3x1) surface reflects the formation of an intermediate of Rh-O complex overlayer and it reacts rapidly with H₂.     

Low-temperature STM images of methyl-terminated Si(111) surfaces

Low-temperature scanning tunneling microscopy (STM) has been used to image CH(3)-terminated Si(111) surfaces that were prepared through a chlorination/alkylation procedure. The STM data revealed a well-ordered structure commensurate with the atop sites of an unreconstructed 1 x 1 overlayer on the silicon (111) surface. Images collected at 4.7 K revealed bright spots, separated by 0.18 +/- 0.01 nm, which are assigned to adjacent H atoms on the same methyl group. The C-H bonds in each methyl group were observed to be rotated by 7 +/- 3 degrees away from the center of an adjacent methyl group and toward an underlying Si atom. Hence, the predominant interaction that determines the surface structure arises from repulsions between hydrogen atoms on neighboring methyl groups, and secondary interactions unique to the surface are also evident.     

Hydrogen diffusion on (100), (111), (110) and (211) gold faces

Calculations showed that hydrogen adsorption into subsurface sites is most likely to occur on Au (110) and (211) faces. The presence of low-coordinated Au atoms on significantly reduces the barrier of subsurface adsorption of H. The barriers of H surface diffusion increase in the following Au series: (110) < (111) < (100) < (211). An analysis of the dependence of the surface diffusion barriers on the electronic structure of gold atoms on the respective faces revealed a U-shaped dependence of the centers of the s- and d-bands. This dependence is the result of the filling of the s- and d-bands on different faces of the gold. The results obtained suggest that it is possible to use band centers to determine surface diffusion barriers.     

Single crystal RuO2 (110): Surface structure

The surface structure of RuO₂ (110) has been studied with LEED, AES and XPS. The “as-grown” surface shows no LEED patterns and both AES and XPS indicate that the surface is depleted in oxygen in high vacuum. After extensive annealing in an O₂ atmosphere reproducible LEED patterns characteristic of the (110) surface were obtained. For the well-ordered surface the oxygen XPS results revealed oxygen associated with the bulk RuO₂, the presence of RuO₃ and oxygen bound to surface atoms.     

LiNbO_3不同晶面的光催化产氢性能

研究了LiNbO3(001)、(100)和(110)晶面的光催化产氢性能。(001)、(100)和(110)3个晶面光催化产氢性能之比为7.8∶1.3∶1.0。LiNbO3[001]晶向存在电偶极矩和自发极化,有利于增加光生电子和空穴的分离效率,减少光生电子和空穴的复合,提高LiNbO3(001)面的光催化活性。LiNbO3(001)面的空穴有效质量最小,有利于光生空穴的迁移,从而减少光生电子和空穴的复合,也有利于光催化性能的提高。     

LiNbO3不同晶面的光催化产氢性能

研究了LiNbO₃（001）、（100）和（110）晶面的光催化产氢性能。（001）、（100）和（110）3个晶面光催化产氢性能之比为7.8：1.3：1.0。LiNbO₃[001]晶向存在电偶极矩和自发极化,有利于增加光生电子和空穴的分离效率,减少光生电子和空穴的复合,提高LiNbO₃（001）面的光催化活性。LiNbO₃（001）面的空穴有效质量最小,有利于光生空穴的迁移,从而减少光生电子和空穴的复合,也有利于光催化性能的提高。     

NO2在Ag/Pt(110)双金属表面上的吸附和分解

利用俄歇电子能谱(AES)和程序升温脱附谱(TDS)研究了NO₂在Ag/Pt(110)双金属表面的吸附和分解.室温下NO₂ 在Ag/Pt(110)双金属表面发生解离吸附, 生成NO(ads)和O(ads)表面吸附物种. 在升温过程中NO(ads)物种发生脱附或者进一步分解. 500 K时NO₂在Ag/Pt(110)双金属表面发生解离吸附生成O(ads)表面吸附物种. Pt 向Ag传递电子, 从而削弱Pt－O键的强度, 降低O(ads)从Pt 表面的并合脱附温度. 发现能够形成具有稳定组成的Ag/Pt(110)合金结构, 其表现出与Pt(110)-(1×2)相似的解离吸附NO₂能力, 但与O(ads)的结合明显弱于Pt(110)-(1×2). 该AgPt(110)合金结构是可能的低温催化直接分解氮氧化物活性结构.     

Simultaneous SIMS/AES Measurements for the Characterization of Multilayer Systems

The interface region of silicon dioxide layers deposited on indium phosphide was investigated by simultaneous secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) depth profile measurements. The results of such measurements depend strongly on the ion species used for sputtering. With Ar⁺ primary ions an enhancement of the P- and In-SIMS signals occurs in the mixing zone at the interface. This effect can be explained by an increase of the ionization yield of In and P in the presence of oxygen from the SiO₂. The use of O₂ ⁺ as sputter ions enlarges the phosphorus peak at the interface while the enhancement of the In-signal diminishes. The simultaneously measured AES spectra give clear evidence of oxygen bonded In and P at the interface. Additionally, preferential sputtering of phosphorus occurs. The understanding of these effects which complicate the interpretation of SIMS and AES depth profile measurements of the system SiO₂/InP allows us to investigate the silicon dioxide layers and the interface region in order to optimize the SiO₂ deposition process, e.g. for surface passivation or MIS structures.