Second-harmonic generation in three-well and bound-to-continuum GaAs-based quantum-cascade lasers

We present efficient second-harmonic generation in state of the art GaAs-based quantum-cascade lasers with nonlinear output powers up to 100 μW. The nonlinear output was significantly improved by applying an AlGaAs waveguide structure, which guides both, the fundamental and nonlinear light. We further show the influence of the doping in the active region on the nonlinear light generation by comparing two similar structures with different doping levels. PACS 42.55.Px; 42.65.Ky; 81.05.Ea     

Comparative study of continuous wave Tm<Superscript>3+</Superscript>-doped silica and fluoride fiber lasers

We compare Tm³⁺-doped silica and fluoride fiber lasers in continuous wave operation using the same experimental setup. For incident pump powers of up to 50 W, the fluoride fiber is shown to have higher output power and efficiency compared to silica and reaches a maximum output power of 20 W at 1.94 μm. A slope efficiency of 49% (41%) and a maximum optical-to-optical efficiency of 45% (35%) at an incident pump power of 25 W (37 W) were determined for the fluoride (silica) fibers, respectively. These optical-to-optical efficiencies are the highest reported for directly diode-pumped Tm³⁺-based fiber lasers. We establish that in free-running mode, fiber lasers using fluoride glass are temporally more stable than fiber lasers using a silica host. PACS 42.55.Wd; 42.55.Xi; 42.60.Mi; 42.70.Hj     

Continuous-wave high power laser operation and tunability of Yb:LaSc3(BO3)4 in thin disk configuration

We report power scaling of the Yb³⁺:LaSc₃(BO₃)₄ (Yb:LSB) laser material in thin disk configuration. Employing a 300-μm thick Yb(25 at. %):LSB crystal, the continuous-wave output power around 1.0 μm wavelength reaches 40 W for 95 W of pump power at 974 nm; the overall optical-to-optical efficiency and the slope efficiency are 0.43 and 0.48, respectively. Preliminary experiments show continuous tuning of the laser output between 991 nm and 1085 nm. PACS 42.55.Xi; 42.60.Fc; 42.55.Rz     

Thermal lensing, thermal management and transverse mode control in microchip VECSELs

Finite-element analysis is used to explore the practicalities and power-scaling potential of quasi-monolithic microchip vertical-external-cavity surface-emitting lasers: thermal lensing and its implications for transverse mode control are emphasised. A comparison is made between the use of sapphire and diamond heat spreaders. The experimental characterisation of an InGaAs/sapphire microchip VECSEL is presented as an exemplar system and the factors affecting slope efficiency, threshold and output power roll-over are examined. By comparing experimental measurements with the finite-element model, the key role of thermal lensing in transverse mode control is demonstrated. PACS 42.55.Xi; 42.55.Rz; 42.55.Px     

Power scaling of a continuous-wave and passively Q-switched Yb:KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript> laser end-pumped by a high-power diode

The power scaling capacity of a diode end-pumped Yb:KLu(WO₄)₂ laser, operating in the continuous-wave (cw) and passively Q-switched regimes, has been investigated. A cw output power of 11.5 W was achieved with an optical-to-optical efficiency of 41% with respect to the incident pump power, while the slope efficiency amounts to 60%. The passively Q-switchedoperation yielded an average output power of 4.3 W at the fundamental wavelength of 1031.7 nm, and 1.15 W of Raman radiation at 1139.3 nm. The total slope efficiency for Q-switched operation was 40%. The highest pulse energy, duration, and peak power were 170 μJ, 2.2 ns, and 77.3 kW for the fundamental radiation, and 51 μJ, 2.3 ns, and 22.2 kW for the Raman radiation. PACS 42.55.Rz; 42.55.Xi; 42.55.Ye     

高功率梯度掺杂增益光纤温度特性理论研究

在高功率光纤激光器中, 增益光纤的热效应是限制激光功率进一步提高的重要因素之一. 为了降低增益光纤的最高温度, 提出了一种通过改变增益光纤的掺杂浓度分布, 分散光纤激光的热效应, 从而提高激光输出功率的方法. 基于速率方程模型和热传导模型, 在光纤激光放大器输出功率大致相当的情况下, 对几种不同掺杂方式下增益光纤中的热分布和放大器的输出功率进行了数值模拟. 研究结果表明: 增益光纤的梯度掺杂可以优化光纤中的温度分布并提高光纤熔接点的稳定性; 同时兼具提高输出光束的光束质量、抑制光纤中非线性效应和模式不稳定的效果, 是提高光纤激光放大器输出功率切实可行的办法. 研究结果可以为高功率光纤激光器中增益光纤的设计提供一定的参考.     

Effect of ytterbium concentration on cw Yb:YAG microchip laser performance at ambient temperature – Part I: Experiments

The microchip laser performance of Yb:YAG crystals doped with different ytterbium concentrations (C_Yb=10, 15, and 20 at. %) has been investigated at ambient temperature without active cooling of the gain media. Efficient laser oscillation for a 1-mm-thick YAG doped with 10 at. % Yb³⁺ ions was achieved at 1030 and 1049 nm with slope efficiencies of 85% and 81%, correspondingly. The laser performance of heavy-doped Yb:YAG crystals was limited by the thermal population at terminated lasing level and thermal lens effect at room temperature without sufficient cooling of the samples. The laser emitting spectra of Yb:YAG microchip lasers with different Yb concentrations and output couplings are addressed with the local temperature rise, due to the absorption of the pump power inside the gain media under different pump levels. PACS 42.55.Xi; 42.70.Hj; 42.55.Rz     

Comparison of laser performance of Yb:YCa4O(BO3)3 crystals cut along the principal optical axes

Efficient high-power continuous-wave laser operation is demonstrated with Yb:YCa₄O(BO₃)₃ crystals cut along the X, Y, and Z principal axes, end pumped by a high-power diode. Highest output powers of 6.3–7.3 W are generated, with slope efficiencies in the range of 73–83%. The standard behavior characterized by fixed linear polarization of the output and decreasing oscillation wavelength when increasing the output coupling was observed only for the X-cut crystal; the Y-cut crystal led to the polarization state changing and coexistence, while the Z-cut crystal resulted in dual-band laser operation with a fixed polarization state. PACS 42.55.Rz; 42.55.Xi     

All-solid-state continuous-wave yellow laser based on intracavity frequency-doubled self-Raman laser action

We report continuous-wave yellow emission from a compact Nd:YVO₄ self-Raman laser with intra-cavity frequency-doubling in LBO, pumped by a 4.5 W high-brightness diode laser. A maximum yellow output of 140 mW was observed with an overall optical (diode-to-yellow) conversion efficiency of 4.4%, and with a high beam quality (M²∼1.2). A variety of different resonator configurations were investigated in order to achieve low threshold, highest output powers and efficiency, and to investigate amplitude stability. PACS 42.55.Xi; 42.55.Ye; 42.65.Ky     

Actively mode-locked Tm-Ho:LiYF<Subscript>4</Subscript> and Tm-Ho:BaY<Subscript>2</Subscript>F<Subscript>8</Subscript> lasers

We report on the generation of mode-locking pulse trains with high average output powers from diode-pumped Tm-Ho:LiYF₄ and Tm-Ho:BaY₂F₈ lasers emitting at around 2 μm. The highest output power of 365 mW was obtained with the Tm-Ho:YLF₄ laser, whereas the shortest pulse duration of 120 ps and the widest tunability range of 59 nm was achieved with the Tm-Ho:BaY₂F₈ laser. PACS 42.55.Xi; 42.60.Fc; 42.72.Ai; 42.55.Rz; 42.70.Hj     

Diode-pumped lasers for ultra-high peak power

The generation of the highest laser peak intensities at a high degree of system compactness can be achieved by combining modern diode-pump technologies with the chirped pulse amplification technique. In principle, the spectroscopic properties of the gain medium determine the scaling laws of both high output pulse energy and short pulse duration. Here we introduce a novel criterion classifying laser materials with respect to their ability to generate pulses of highest peak power in a diode-pumped solid state laser system. Furthermore, amplified spontaneous emission as well as laser damage issues affecting the efficiency and compactness of a laser amplifier system are discussed. PACS 42.55.Ah; 42.55.Xi; 42.70.Hj     

High-power ultrafast thin disk laser oscillators and their potential for sub-100-femtosecond pulse generation

Ultrafast thin disk laser oscillators achieve the highest average output powers and pulse energies of any mode-locked laser oscillator technology. The thin disk concept avoids thermal problems occurring in conventional high-power rod or slab lasers and enables high-power TEM₀₀ operation with broadband gain materials. Stable and self-starting passive pulse formation is achieved with semiconductor saturable absorber mirrors (SESAMs). The key components of ultrafast thin disk lasers, such as gain material, SESAM, and dispersive cavity mirrors, are all used in reflection. This is an advantage for the generation of ultrashort pulses with excellent temporal, spectral, and spatial properties because the pulses are not affected by large nonlinearities in the oscillator. Output powers close to 100 W and pulse energies above 10 μJ are directly obtained without any additional amplification, which makes these lasers interesting for a growing number of industrial and scientific applications such as material processing or driving experiments in high-field science. Ultrafast thin disk lasers are based on a power-scalable concept, and substantially higher power levels appear feasible. However, both the highest power levels and pulse energies are currently only achieved with Yb:YAG as the gain material, which limits the gain bandwidth and therefore the achievable pulse duration to 700 to 800 fs in efficient thin disk operation. Other Yb-doped gain materials exhibit a larger gain bandwidth and support shorter pulse durations. It is important to evaluate their suitability for power scaling in the thin disk laser geometry. In this paper, we review the development of ultrafast thin disk lasers with shorter pulse durations. We discuss the requirements on the gain materials and compare different Yb-doped host materials. The recently developed sesquioxide materials are particularly promising as they enabled the highest optical-to-optical efficiency (43%) and shortest pulse duration (227 fs) ever achieved with a mode-locked thin disk laser.     

Experimental and numerical study of the switching dynamics of Raman fiber lasers

We present an experimental and numerical survey of the switching behavior of cascaded Raman fiber lasers (RFLs). When these lasers are switched on, the output power shows a pulsing behavior where the pulse powers strongly exceed the steady-state output powers. The influence of the pump-laser and fiber properties of a RFL on this dynamical behavior is investigated both experimentally and numerically, where experiments and simulations showed good qualitative agreement. PACS 42.55.Wd; 42.55.Ye; 42.60.Lh     

Power scaling potential of Yb:NGW in thin disk laser configuration

We report on efficient laser operation of Yb:NaGd(WO₄)₂ (Yb:NGW) in thin disk laser configuration. Using doping concentrations of 10.7 at. % and 15.3 at. % and disk thicknesses between 0.1 mm and 0.4 mm the optimum crystal parameters have been determined. A 0.1 mm thick, 10.7 at. % Yb:NGW disk pumped at 975 nm delivered 18.2 W of output power at 43.6 W of incident pump power with a slope efficiency of 51% and a resulting optical-to-optical efficiency of 42%. Using a 2 mm thick birefringent filter, continuous tuning from 997 nm to 1075 nm has been achieved. PACS 42.55.Rz; 42.60.Lh; 42.70.Hj     

Extracting microwave energy from a cavity by mode conversion at a coupling window

A study is made of the production of high power nanosecond rf pulses by extracting microwave energy from an oversized cavity by means of conversion, at a coupling window, of the high-Q working mode to an auxiliary mode which is strongly coupled to an external load. It is shown that microwave rf pulse compressors with copper storage cavities and energy extraction by mode conversion at a coupling window can provide gains of 5–13 dB with output signal durations of 20–150 ns and peak powers of 5–10 MW in the 3-cm band and 50–100 MW in the 10-cm band. Rf pulses lasting 30 ns with peak powers of 0.5 MW have been obtained experimentally at a frequency of 9.4 GHz with a gain of 9 dB. Zh. Tekh. Fiz. 68, 92–96 (July 1998)     

Comparative analysis of Tm-Ho:KYF4 laser crystals

A spectroscopic characterization of Tm-Ho:KYF₄ crystals with different doping levels is presented. A comparative investigation based on diode-pumped 2-μm laser experiments shows that the best trade-off in terms of cw output power characteristics and wavelength tuning ranges is obtained with 5% Tm-0.5% Ho active crystal. PACS 42.55Xi; 42.55Rz; 42.60Pk; 42.70Hj; 42.60Lh     

Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling

This work reports single-frequency laser oscillation at λ=1003.4 nm of a diode-pumped vertical external cavity surface-emitting semiconductor laser for metrological applications. A low thermal resistance of the semiconductor active component is achieved by solid-liquid interdiffusion bonding onto a SiC substrate. The spectro-temporal dynamics of the laser is theoretically studied. Experimentally, an output power of 1.7 W is demonstrated in free running operation, and up to 500 mW in a true single longitudinal mode. Furthermore, single-frequency laser emission at λ=501.7 nm is obtained by intracavity frequency doubling, resulting in a total output power as high as 62 mW. PACS 42.55.Px; 42.55.Xi; 42.62.Eh; 42.65.Ky     

Highly stable and efficient KTP-based intracavity optical parametric oscillator with a diode-pumped passively Q-switched laser

We present in this paper a highly stable and efficient KTP-based intracavity optical parametric oscillator with a diode-end-pumped Nd:YVO₄/Cr:YAG passively Q-switched laser. At the incident diode pump power of 4 W, the signal (1.57 μm) and idler (3.29 μm) average output powers up to 580 and 100 mW, respectively, have been achieved. The corresponding conversion efficiency from the input diode pump power to the output signal power is 14.5%, while that to the total OPO output (signal+idler) reaches 17%. To the best of our knowledge, these are the highest conversion efficiencies reported to date. After more than four hours of investigation, the OPO power stability better than 2% has been obtained. In addition, efficient cavity dumping of the IOPO has inevitably led to the short pulse duration (1.6 ns) and high peak power output (8.3 kW) at the signal wave. Additionally, the amplitude and repetition rate fluctuations of the signal pulses are well within 5%. PACS 42.55.Xi; 42.60.Gd; 42.60.Lh; 42.65.Yj     

Laser performance of Nd:LaB3O6 cleavage microchips passively Q-switched with a Cr4+:YAG saturable absorber

Passively Q-switched laser oscillation at 1060 nm from an unprocessed Nd:LaB₃O₆ cleavage microchip with a Cr⁴⁺:YAG saturable absorber has been demonstrated. The influence of absorbed pump power, output coupler transmission and cavity length on the output pulse characteristics has been investigated. For a plano-concave cavity with a cavity length of 28 mm, pulse with 100 mW average output power, 4.0 μJ energy, 17 ns duration, 25 kHz repetition rate, and 0.24 kW, peak power was obtained at the absorbed pump power of 1.42 W and output coupler transmission of 3.5%. For a plano-plano cavity with a cavity length of 5 mm, pulse with 85 mW average output power, 2.1 μJ energy, 2.3 ns duration, 40 kHz repetition rate, and 0.89 kW, peak power was obtained at the absorbed pump power of 1.42 W and output coupler transmission of 5.6%. Because a chopper with a 5% duty cycle was employed in the experiments to reduce the influence of pump-induced thermal loading, the above average output powers were obtained at the 5% duty cycle and extrapolated to 100%.PACS 42.55.Rz; 42.60.Gd; 42.70.Hj     

Laser operation at high repetition rate of 100 kHz in Nd:GdVO4 under 879 nm diode-laser pumping

Highly efficient continuous-wave and acousto-optically Q-switched laser emission in Nd:GdVO₄ crystal, end-pumped at 879 nm into the laser emitting level, are reported. A maximum cw output power of 13.3 W is obtained, corresponding to the slope efficiency of 74.6% in absorbed power; an average output power of 12.1 W, a pulse width of 20.3 ns and a peak power of about 6 kW are reached at 100 kHz in A-O Q-switched operation. PACS  42.55.-f; 42.55.Xi; 42.60.Gd