超薄层AlGaAs样品的光调制反射谱研究

用调制光谱的方法对分子束外延（MBE）生长在GaAs（100）衬底上的一组超薄层本征型Al_xGa_1-xAs层进行了原位的研究．对厚度在35nm以下的一组样品观察到了若干个跃迁峰，而对厚度在100nm的样品只观察到了一个跃迁峰．观察到的各峰随厚度的改变而变化．用台阶势模型很好地解释了实验结果 关键词：     

大功率短波长InAlGaAs/AlGaAs量子点超辐射发光管

为了满足超辐射发光管的短波长应用,采用InAlGaAs/AlGaAs量子点有源区和干法刻蚀工艺制备了短波长弯曲波导超辐射发光管。在1.6A脉冲电流注入下,器件峰值输出功率为29mW,中心波长为880nm,光谱半高宽为20.3nm。比较了干法刻蚀工艺和湿法腐蚀工艺对超辐射发光管器件性能的影响。在1.6A脉冲电流注入下,湿法腐蚀制备的器件峰值输出功率仅为7mW。与湿法腐蚀相比,干法刻蚀可以精确控制波导形状和参数,降低波导损耗,有效增大器件输出功率。     

GaAs/AlGaAs多量子阱光生电压谱研究

在18—300K温度范围内,研究了用半绝缘体GaAs作为衬底的GaAs/AlGaAs多量子阱的光生电压谱.共观测到11H,11L,22H,22L,33H,33L,13H和31H等多种允许和禁戒的激子吸收峰.低温下的光生电压谱清晰地反映了多量子阱台阶式的状态密度分布.认为光生电压谱也可以作为一种判断多量子阱和超晶格外延生长质量的方法.还讨论了光生电压随温度的变化和光生电压效应的机理. 关键词：     

GaAs／GaAlAs定向耦合器型行波调制器II.实验

在理论分析设计的基础上，进行了ＧａＡｓ／ＧａＡｌＡｓ定向耦合器型波调制器试验，建立了器件行波电极微波特性的测试系统，由此系统进行实验确定器件最佳结构参数，完成器件的制作，器件采用共平面波电极，击穿电压２８Ｖ。用１．０６μｍＹＡＧ激光器进行测试，开关电压８．５Ｖ。由微波网络分析仪测试器件行波电极的微波特性，测得电极中微波与波导中光波间的速率失配小于３％，且在３０ＧＨｚ下，微波传输损耗小于３０ｄＢ表明     

集成双波导半导体光放大器光开关实现波长转换的理论研究

建立了基于集成双波导半导体光放大器的光开关(ITG-SOA-Switch)的理论分析模型.与半导体光放大器(SOA)的特性相比较表明，由于ITG-SOA-Switch合并了多种物理效应，故其静态增益饱和曲线在饱和功率点附近具有大幅度陡峭下降的独特性质.理论分析和10 Gbit/s波长转换模拟结果显示，恰当地选择输入抽运光的功率范围，ITG-SOA-Switch波长转换器输出转换光的消光比特性较之输入抽运光会有显著的改善. 关键词： 波长转换 半导体光放大器 集成双波导半导体光放大器 光开关     

利用超连续谱光源产生超短光脉冲

利用光纤中的各种非线性效应,获得了重复频率为２．５ＧＨｚ、光谱宽度达６０ｎｍ的超连结续谱超短光脉冲源。利用两个带宽分别为０．４ｎｍ及１．２ｎｍ的可调谐滤波器,从超连续光谱的不同波长处获得了脉宽为５．７ｐｓ及３．６ｐｓ的超短光脉中。由实验规律发现,在多种非线性效应中,四波混步效应对超连续光谱的形成有重要作用。     

大功率掺Yb双包层光纤宽带超荧光光源

利用波长为976nm的半导体激光器抽运掺Yb双包层光纤,制成了大功率光纤宽带超荧光光源,最大超荧光输出功率为54.11mW;此时斜率效率为69．35％,中心波长为1082nm,3dB带宽为17．2nm。     

基于类噪声脉冲抽运的平坦超连续谱光源

设计了一种由类噪声脉冲抽运的全光纤结构平坦超连续谱光源.在色散管理掺铒光纤激光器中通过调节腔内偏振态,在泵浦功率为450 mW时,实现了稳定的类噪声脉冲锁模,锁模脉冲的中心波长为1600 nm,脉冲宽度为303 fs.在最大泵浦功率为1 W时,谐振腔直接输出功率为8.6 mW.较低的功率无法有效拓展超连续谱宽度,为此设...     

AlGaAs:Sn中DX中心电子俘获势垒的精细结构

采用定电容电压法,测量了n型Al0.26Ga0.74As:Sn中DX中心电子热俘获瞬态,以及不同俘获时间后的电子热发射瞬态;并对瞬态数据进行数值Laplace变换,得到其Laplace缺陷谱（LDS）。通过分析LDS谱,确定了电子热俘获和热发射LDS谱之间的对应关系,从而得到热俘获系数对温度依赖关系,以及与Sn相关的DX中心部分电子热俘获势垒的精细结构;通过第一原理赝势法计算表明,Sn附近的Al/Ga原子的不同配置是电子热俘获势垒精细结构产生的主要原因。     

超辐射发光二极管抗反射膜的设计

分析了设计超辐射发光二极管抗反射膜的光导纳法,介绍了有效折射率的概念。选用TiO2和SiO2两种材料给出了中心波长为850 nm时的设计实例。结果表明设计时要考虑有效折射率,才能获得好的性能。     

A Novel Wavelength Division Multiplexing Passive Optical Network Based on Self-Seeding Light Source and Doubling Wavelength-Utilized Rate

Abstract

A wavelength-utilized rate-doubled wavelength division multiplexing passive optical network based on a self-seeding light source is proposed. The effect of distributed fiber length and power division ratio on the upstream-signal power is analyzed; the result indicates that raising the power division ratio can increase the upstream-signal power when it is lower than 0.86. The power difference between upstream signals caused by the length difference of distributed fibers is also expanded with power division ratio; thus, the power division ratio should be decreased to a proper level to reduce the power difference when the length difference is too large.     

半导体超辐射发光管自发发射因子的估算

自发发射因子β是半导体光电器件的重要参数,在以往对超辐射发光管的特性分析,特别是应用速率方程对超辐射器件的光强进行估算时,多沿用与超辐射发光器件相应结构激光器的β因子,由于两者的光输出特性不同,这种沿用不仅会造成β因子物理意义上的混乱,而且也给超辐射器件光电特性的分析带来了较大的误差。对超辐射发光管的自发发射因子β进行了讨论,提出了平均自发发射因子的概念,并对增益导引及折射率导引的β因子进行了估算     

MOVPE Growth and Fabrication of 1.3μm High Power InGaAsP-InP Polarization-Insensitive Superluminescent Diodes with Complex Strained Quantum Wells

High power polarization-insensitive InGaAsP-InP multiple quantum well (MQW) superluminescent diodes (SLD's) emitting at 1.3μm were investigated. A combination of tensile strained and compressively strained quantum wells called complex strained MQW were used in a single active layer in order to obtain polarization insensitivity. Low-pressure metalorganic chemical vapor phase epitaxy was used for crystal growth. High resolution X-ray diffraction and photoluminescence spectra showed excellent crystal quality. The SLD's were fabricated to ridge waveguide structure with 7° tilted cavity, the two facets were coated with two layers anti-reflection TiO₂/SiO₂ films, residual facet reflectivity was found to be less than 0.04%. The SLD's exhibited a up to 18.8 mW optical output power and less than 1 dB polarization dependence of output power with a less than 0.5 dB optical spectra modulation at 250 mA.     

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.     

Si杂质扩散诱导InGaAs/AlGaAs量子阱混杂的研究（英文）

光学灾变损伤(COD)常发生于量子阱半导体激光器的前腔面处,极大地影响了激光器的出光功率及寿命。通过杂质诱导量子阱混杂技术使腔面区波长蓝移来制备非吸收窗口是抑制腔面COD的有效手段,也是一种高效率、低成本方法。本文选择了Si杂质作为量子阱混杂的诱导源,使用金属有机化学气相沉积设备生长了InGaAs/AlGaAs量子阱半导体激光器外延结构、Si杂质扩散层及Si 3 N 4保护层。热退火处理后,Si杂质扩散诱导量子阱区和垒区材料互扩散,量子阱禁带变宽,输出波长发生蓝移。退火会影响外延片的表面形貌,而表面形貌则可能会影响后续封装工艺中电极的制备。结合光学显微镜及光致发光谱的测试结果,得到825℃/2 h退火条件下约93 nm的最大波长蓝移量,也证明退火对表面形貌的改变,不会影响波长蓝移效果及后续电极工艺。     

10 Gb/s Reconfigurable Optical Logic Gate Using a Single Hybrid-Integrated SOA-MZI

A novel reconfigurable Boolean device based on a single Mach-Zehnder interferometer with semiconductor optical amplifiers is demonstrated at 10 Gb/s using intensity return-to-zero modulated signals. The experimental results show that the device can be dynamically reconfigured to operate as a logic XOR, AND, OR, and NOT gate using optical switches. By properly adjusting the input powers, an extinction ratio higher than 10 dB may be obtained. The potential of integration of this architecture makes it an interesting approach in photonic computing and optical signal processing.     

10 Gb/s Reconfigurable Optical Logic Gate Using a Single Hybrid-Integrated SOA-MZI

Abstract

A novel reconfigurable Boolean device based on a single Mach-Zehnder interferometer with semiconductor optical amplifiers is demonstrated at 10 Gb/s using intensity return-to-zero modulated signals. The experimental results show that the device can be dynamically reconfigured to operate as a logic XOR, AND, OR, and NOT gate using optical switches. By properly adjusting the input powers, an extinction ratio higher than 10 dB may be obtained. The potential of integration of this architecture makes it an interesting approach in photonic computing and optical signal processing.