段化(A/B)m复合纳米线阵列的矫顽力机理

基于球链模型的对称扇形转动机理，考虑了段间的界面交换耦合作用，对利用电化学沉积方法制备的段化复合磁性纳米线六角阵列的磁滞回线进行了系统的研究，提出了矫顽力随复合段数m的变化规律.指出在这种段化复合纳米线阵列中，段间的交换耦合作用对磁化反转起着重要的影响. 关键词： 球链模型 复合纳米线 矫顽力 交换耦合     

纳米复合永磁材料的有效各向异性与矫顽力

研究了纳米Nd2Fe14B/α-Fe复合永磁材料中晶粒交换耦合相互作用对有效各向异性的影响和变化规律.结果表明：晶粒之间的交换耦合作用使材料的有效各向异性Keff随晶粒尺寸的减小而下降、随软磁性相成分的增加而降低. 当晶粒尺寸 减小到4nm时，Keff值减小为其各自通常各向异性常数值的1/3—1/4.有效各向异性的变化特点与矫顽力的变化规律基本相同.纳米复合永磁材料矫顽力的降低主要由于有效各向异性的减小而引起. 关键词： 纳米复合永磁材料 交换耦合相互作用 有效各向异性 矫顽力     

NiFe2O4纳米线阵列的制备与磁性

在氧化铝模板的纳米孔洞中, 用电化学的方法沉积铁镍合金纳米线，经过550℃30h氧化处理 , 成功制备出 NiFe2O4纳米线阵列. 分别用扫描电子显微镜 (SEM) 、透射电 子显微镜 (TEM) 、x射线衍射仪 (XRD) 和振动样品磁场计 (VSM) 对样品的形貌、晶体结构 和磁学性质进行了表征测试. SEM和TEM观察结果显示氧化铝模板的孔洞分布均匀，孔心距约 为110nm; 纳米线的直径约为70nm. XRD显示纳米线阵列的物相结构为NiFe2O4; VSM测试结果表明，NiFe2O4纳米线阵列膜的易磁化方向垂直于膜面. 当垂直 磁化时磁滞回线的矩形比约为05，矫顽力为41×103A/m，比氧化处理前的铁镍合金 纳米线阵列都有显著提高. 关键词： 纳米线 Ni Fe2O4 矫顽力     

NiFe2O4纳米线阵列的制备与磁性

在氧化铝模板的纳米孔洞中, 用电化学的方法沉积铁镍合金纳米线,经过550℃30h氧化处理, 成功制备出 NiFe2O4纳米线阵列. 分别用扫描电子显微镜 (SEM) 、透射电子显微镜 (TEM) 、x射线衍射仪 (XRD) 和振动样品磁场计 (VSM) 对样品的形貌、晶体结构和磁学性质进行了表征测试. SEM和TEM观察结果显示氧化铝模板的孔洞分布均匀,孔心距约为110nm; 纳米线的直径约为70nm. XRD显示纳米线阵列的物相结构为NiFe2O4; VSM测试结果表明,NiFe2O4纳米线阵列膜的易磁化方向垂直于膜面. 当垂直磁化时磁滞回线的矩形比约为0.5,矫顽力为41×103A/m,比氧化处理前的铁镍合金纳米线阵列都有显著提高.     

纳米晶复合永磁材料的交换耦合相互作用和磁性能

本介绍了纳米磁性材料晶粒交换耦合相互作用的有关理论。采用不同模型讨论了晶粒交换耦合相互作用对纳米单相软磁材料、永磁材料及双相复合永磁材料磁性能的影响。简述了用δM（H）曲线和不可逆磁导率的变化研究晶粒交换耦合相互作用及反磁化过程的方法。讨论了合金分配比、添加元素、制备及热处理工艺对磁体硬磁性能的影响。从理论和实验两方面分析、研究了纳米复合永磁材料的反磁化过程和矫顽力机制。     

高矫顽力的Co70Cu30合金纳米线阵列的制备及磁性研究

利用直流电化学沉积法, 在多孔阳极氧化铝模板中首次制备出了具有[220]取向的单晶 面心立方结构的CoCu固溶体合金纳米线阵列, 其Co含量高达70%.透射电子显微镜显示纳米线均匀连续, 具有较高的长径比, 约为300. 磁性测量表明所制备的Co₇₀Cu₃₀ 合金纳米线具有超高的矫顽力H_c//=2438 Oe(1 Oe=79.5775 A/m)和较高的矩形比S//=0.76, 远高于以往报道的CoCu合金纳米线的磁性, 分析表明磁性好的主要原因是由于较高Co含量和高形状各向异性. 通过磁性测量和模型计算, 得到Co₇₀Cu₃₀ 合金纳米线阵列在反磁化过程中遵从对称扇型转动的球链模型, 并从结构的角度分析了Co₇₀Cu₃₀合金纳米线阵列的反磁化行为.     

碳纳米管-硅纳米线复合结构的形成和热稳定性

通过分子动力学方法模拟了在碳纳米管内填充一定数目的半导体元素硅形成碳纳米管-硅纳米线复合结构的过程,并采用Lindemann指数研究了这种复合结构的热稳定性．计算结果表明,当考虑碳纳米管和硅纳米线轴向方向的周期性边界条件之后,在C（13,0）和C （14,0）碳纳米管内能够形成亚稳结构的硅纳米线Si₁₆NW和Si₂₀NW,从而获得一种碳纳米管-硅纳米线的新型复合结构．通过计算这种复合结构的Lindemann指数,可以看到由于碳纳米管的保护作用,碳纳米管包裹的硅纳 关键词： 复合结构 纳米线 碳纳米管 分子动力学     

纳米晶复合永磁材料的交换耦合相互作用和磁性能

本文介绍了纳米磁性材料晶粒交换耦合相互作用的有关理论。采用不同模型讨论了晶粒交换耦合相互作用对纳米单相软磁材料、永磁材料及双相复合永磁材料磁性能的影响。简述了用δM(H)曲线和不可逆磁导率的变化研究晶粒交换耦合相互作用及反磁化过程的方法。讨论了合金成分配比、添加元素、制备及热处理工艺对磁体硬磁性能的影响。从理论和实验两方面分析、研究了纳米复合永磁材料的反磁化过程和矫顽力机制。     

相分布和晶粒尺寸对Nd2Fe14B/ɑ-Fe纳米复合永磁材料矫顽力的影响

本文采用统计平均方法研究了软、硬磁性晶粒尺寸及相分布对Nd2Fe14B/α-Fe纳米复合永磁材料矫顽力的影响。计算结果表明：对于单相纳米硬磁材料，磁体矫顽力随着硬磁性晶粒尺寸的减小而降低；对于软、硬两磁性相组成的Nd2Fe14B/a-Fe纳米复合永磁材料，两相的随机分布将导致磁体矫顽力随硬磁性晶粒尺寸的减小呈现极大值。本文的计算结果还表明当硬磁性晶粒尺寸大于软磁性晶粒的最佳尺寸时(15nm)，具有多层膜结构的Nd2Fe14B/a-Fe纳米复合永磁材料将比两相随机分布时具有更大的矫顽力。     

CoxCu1-x复相纳米线阵列的制备及其磁性的研究

利用电化学沉积方法在同一种富Co²⁺溶液Co²⁺/Cu²⁺=10∶1中,利用不同的沉积电位成功地制备了一系列不同成分(x=0.38—0.87)和复合相结构的Co_xCu_1-x纳米线阵列.发现随着纳米线中Cu含量的变化,Co_xCu_1-x纳米线的复相结构随之发生规律的变化,最终导致纳米线的磁性也随之规律的变化.随着纳米线中Cu含量的不断增加,一部分Cu与Co形成面心立方结构(fcc)的CoCu固溶体,减弱了磁晶各向异性与形状各向异性的竞争,从而提高样品的方形度;一部分Cu以fcc结构的Cu单质的形式存在于纳米线中,并随着Cu颗粒大小的不同分别起到破坏磁晶各向异性和钉扎畴壁的作用,从而增加纳米线的方形度和矫顽力.对比不同成分的样品,发现Co_xCu_1-x纳米线的方形度和矫顽力的最大值分别出现在Co₇₅Cu₂₅和Co₆₀Cu₄₀中,并且由于其特殊的复相结构致使它们的值要好于相同直径的单相结构的结果. 关键词： 纳米线 电化学沉积 磁性     

Coercivity mechanism of Sm(Co, Cu)5

The mechanism of the high intrinsic coercivity of the Sm(Co_1−xCu_x)₅ (0≦x<1) system was studied by relating the coherency between the lattice constants of hexagonal Sm(Co, Cu)₅ and hcp Co to the coercive force. It was found analytically that the intrinsic coercive force reaches a maximum in the composition range from x=0.6 to 0.8, where the lattice mismatch approaches zero, so that there is a strong correlation between lattice matching and coercive force. When a Sm ion was located within a Sm(Co, Cu)₅ grain and in the outmost edge of the a and c planes of its grain surrounded or not surrounded by the coherent Co phase, the crystal field parameter at each Sm³⁺ site was calculated using a point charge model under the assumption that the Co and Cu atoms located in a grain and the hcp Co atoms situated at the interface uniformly have a charge of 3/5−. The results indicated that the Co phase precipitated coherently along the grain boundaries effectively enhances the magnetocrystalline anisotropy of Sm ions located in the outmost edges of the a and c planes of a Sm(Co, Cu)₅ grain.     

Growth mechanism studies of ZnO nanowire arrays via hydrothermal method

Well-controlled ZnO nanowire arrays have been synthesized using the hydrothermal method, a low temperature and low cost synthesis method. The process consists of two steps: the ZnO buffer layer deposition on the substrate by spin-coating and the growth of the ZnO nanowire array on the seed layer. We demonstrated that the microstructure and the morphology of the ZnO nanowire arrays can be significantly influenced by the main parameters of the hydrothermal method, such as pH value of the aqueous solution, growth time, and solution temperature during the ZnO nanowire growth. Scanning electron microscopy observations showed that the well oriented and homogeneous ZnO nanowire arrays can be obtained with the optimized synthesis parameters. Both x-ray diffraction spectra and high-resolution transmission electron microscopy (HRTEM) observations revealed a preferred orientation of ZnO nanowires toward the c-axis of the hexagonal Wurtzite structure, and HRTEM images also showed an excellent monocrystallinity of the as-grown ZnO nanowires. For a deposition temperature of 90 °C, two growth stages have been identified during the growth process with the rates of 10 and 3 nm/min, respectively, at the beginning and the end of the nanowire growth. The ZnO nanowires obtained with the optimized growth parameters owning a high aspect ratio about 20. We noticed that the starting temperature of seed layer can seriously influence the nanowire growth morphology; two possible growth mechanisms have been proposed for the seed layer dipped in the solution at room temperature and at a high temperature, respectively.     

COxCu1-x复相纳米线阵列的制备及其磁性的研究

利用电化学沉积方法在同一种富Co2 溶液Co2 /Cu2 =10:1中.利用不同的沉积电位成功地制备了一系列不同成分(x=0.38-0.87)和复合相结构的CoxCu1-x纳米线阵列.发现随着纳米线中Cu含量的变化,CoxCu1-x纳米线的复相结构随之发生规律的变化,最终导致纳米线的磁性也随之规律的变化.随着纳米线中Cu含量的不断增加,一部分Cu与Co形成面心立方结构(fcc)的CoCu固溶体,减弱了磁晶各向异性与形状各向异性的竞争,从而提高样品的方形度;一部分Cu以fcc结构的Cu单质的形式存在于纳米线中,并随着Cu颗粒大小的不同分别起到破坏磁晶各向异性和钉扎畴壁的作用,从而增加纳米线的方形度和矫顽力.对比不同成分的样品,发现CoxCu1-x纳米线的方形度和矫顽力的最大值分别出现在Co75Cu25和Co60Cu40中,并且由于其特殊的复相结构致使它们的值要好于相同直径的单相结构的结果.     

Platinum passivation of self-assembled erbium disilicide nanowire arrays on Si(001)

Self-assembled ErSi_2-x nanowires were grown on Si(001) substrates with an average nanowire width of 2.8 nm. Submonolayer coverage of platinum was deposited on the Si(001) surface post ErSi_2-x growth. Scanning tunneling microscopy and reactive ion etching showed that platinum preferentially deposited on the nanowire surface versus the Si surface. Reactive ion etching of ErSi_2-x nanowires with and without platinum on the surface demonstrated that platinum acted as a more resistant etch mask than ErSi_2-x. Pt/ErSi_2-x nanowires are air stable whereas ErSi_2-x nanowires decompose after exposure to ambient for five weeks. PACS 81.16.Dn; 68.37.Ef; 68.43.Hn; 68.65.Hb; 68.65.La     

Coercivity mechanism in nanophase (Nd–Pr)–Fe–B melt spun alloys

The nucleation mechanism to predict coercivity values in melt-spun exchange-coupled (Nd_1−xPr_x)_yFe_94−yB₆ alloys for various Nd:Pr ratios x, and Fe:RE ratios y, was tested using the dependence of the anisotropy constant K₁ on Pr content x for the minimum nucleation field H_N^min in the modified Brown's equation. Very good agreement was found between experimental data and theoretical values, confirming the predominance of the nucleation of reverse domains over the wall pinning process in the coercivity mechanism of melt spun REFeB alloys.     

AlN纳米线宏观阵列的制备

借助二次模板法成功的合成了AlN纳米线宏观阵列,并进行了表征.主要研究CVD法制备有一定取向,直径均匀的AlN纳米线宏观阵列的过程.通过气相沉积法和利用PS球自组装模板制备了金属纳米颗粒模板;再以模板上的金属纳米颗粒作为催化剂,利用化学气相沉积在模板上合成AlN纳米线宏观阵列.借助SEM,TEM观察所得样品,AlN纳米线阵列面积约为0.3 mm×0.2 mm,直径和长度分布均匀,平均直径约为41 nm,平均长度为1.8 μm左右,分散密度和覆盖率大的六角结构AlN纳米线宏观阵列.得到了可控制备AlN纳米线 关键词： AlN纳米线阵列 模板法 CVD法 SEM     

Transport properties of InSb nanowire arrays

Single-crystalline InSb nanowire arrays were prepared by pulsed electrochemical deposition into anodic alumina membranes, and subjected to characterization using X-ray diffraction, field emission scanning electron microscope and transmission electron microscopy. A nonlinear I–V characteristic and a decreased resistance with temperature were observed in InSb nanowire arrays. The mechanisms of the different temperature dependencies of the resistance of InSb nanowires with different diameters were discussed. PACS 67.55.Hc; 73.63.Bd; 61.82.Fk     

Growth of self-assembled ZnO nanowire arrays

This paper reports on ZnO nanowires arrays synthesized using Sn as a catalyst. The Sn particles were produced from the reduction of SnO₂ powders via a vapour-solid growth process. Control of growth conditions led to the formation of ZnO nanowire arrays, radial nanowire ‘flowers’ and uniaxial fuzzy nanowires. ZnO nanowire–nanobelt junctions were also grown by changing the growth direction. As-grown nanowire arrays could be fundamental materials for investigating physical and chemical properties at nano-scale dimensions.