Cathodoluminescence Depth Profiling in SiO2:Ge Layers

 For investigation of the luminescent center profile cathodoluminescence measurements are used under variation of the primary electron energy E ₀ = 2…30 keV. Applying a constant incident power regime (E ₀·I ₀ = const), the depth profiles of luminescent centers are deduced from the range of the electron energy transfer profiles dE/dx. Thermally grown SiO₂ layers of thickness d = 500 nm have been implanted by Ge⁺-ions of energy 350 keV and doses (0.5–5)10¹⁶ ions/cm². Thus Ge profiles with a concentration maximum of (0.4 – 4) at% at the depth of d_m≅240 nm are expected. Afterwards the layers have been partially annealed up to T _a = 1100 °C for one hour in dry nitrogen. After thermal annealing, not only the typical violet luminescence (λ = 400 nm) of the Ge centers is strongly increased but also the luminescent center profiles are shifted from about 250 nm to 170 nm depth towards the surface. This process should be described by Ge diffusion processes, precipitation and finally Ge nanocluster formation. Additionally, a Ge surface layer is piled-up extending to a depth of roughly 25 nm.     

X-Ray Microanalysis of Thin Surface Films and Coatings

 The paper gives an overview of the present knowledge in the field of X-ray analysis of surface films and more generally stratified specimens. The aim of the paper is not to report the details and formulas of the available quantitative procedures, but to concentrate on the general ideas and orders of magnitude illustrating the capability and limits of the method, and on the optimal adaptation of the operating conditions to every particular problem. The various specific pitfalls which can be encountered are pointed out, in particular the fluorescence effects when using high-energy X-ray lines, or the anomalies due to chemical bonding, absorption uncertainties, and contamination effects when soft radiations are employed.     

Effect of Oxide Coverage on the Growth of Amorphous Al2Pt Phase on an Al Surface

 In the present experiments the high temperature successive deposition (HTSD) of Al and Pt and the half shadowing technique producing wedge shaped area with increasing quantity of deposited Pt are applied for studying the initial stages of solid phase reaction producing amorphous Al₂Pt phase. The nucleation of Al₂Pt phase results in a decoration pattern which could be related to the characteristic local oxide coverage of the Al crystal surface developing by kinetic segregation of oxygen species during the Al film deposition. In the area of larger amount of deposited Pt, where the Al₂Pt phase is continuous Kirkendall voids are present. The samples were investigated in plane by transmission electron microscopy (TEM) and selected area electron diffraction (SAED) and analysed by energy dispersive X-ray spectroscopy (EDX).     

Solid State Analysis with the New Leipzig High-Energy Ion Nanoprobe

 The high-energy ion nanoprobe LIPSION at the University of Leipzig has been operational since October 1998. The ultrastable single ended 3.5 MV SINLETRON^TM accelerator supplies the H⁺ or He⁺ ion beam. A magnetic scanning system moves the focused beam across the sample. At present, a resolution of 150 nm in the low current mode and 300 nm at 5 pA could be achieved. The UHV grade experimental chamber is equipped with electron-, energy dispersive X-ray-, and particle detectors. They can be used simultaneously to analyse the sample by means of PIXE (particle induced X-ray emission), RBS (Rutherford backscattering) and in the case of thin samples STIM (scanning transmission ion microscopy). A goniometer allows the application of channeling measurements in single crystals in combination with these methods. The detection limits depend on the elements to be analysed and range from (1000⋯1) μg/g relative and (1⋯0.01) pg absolute. The analysis is nondestructive, but the sample has to be vacuum resistant. Applications of the nanoprobe in the field of semiconductor research, biomedicine, and archaeology will be described.     

SIMS Profiling and TEM of CVD Films on Multi-Filament Samples

 A suitable fibre coating is essential to obtain optimal fibre-matrix interaction in fibre-strengthened composite materials. Thin films (∼100 nm) of silicon carbide, turbostratic carbon, and boron nitride were deposited by CVD as single or double layers on commercial multi-filament fibres in a continuous process. The fibre material itself may be carbon, alumina, silicon carbide, or a quaternary ceramic of SiCBN. The application of MCs⁺-SIMS enables one to determine the composition (including impurities of H and O) of various fibre coating materials with an accuracy of at least 20% relative. Due to the special geometry of the multi-filament samples the depth resolution of the SIMS depth profiles is limited, nevertheless, layered structures and some details of the interface between coating and fibre can be studied. The depth calibration of the SIMS depth profiles is derived from sputter rates established on flat samples with a composition similar to that of the fibre coating material. However, the obtained film thicknesses are not extremely different from the values derived from TEM on cross sections of coated fibres.     

Data Preprocessing in Peak Shape Analysis of Auger Electron Spectra

 Factor analysis is an established method of peak shape analysis in Auger electron spectrometry. The influence of different commonly used data preprocessing tools onto the results of factor analysis is demonstrated on AES depth profiles of multilayers and implantation profiles. For the analysis of Auger electron spectra it has been traditional to differentiate spectra by Savitzky and Golay’s method to remove background and to elucidate changes in peak shape. For phosphorus implanted in titanium it is shown that background removal works not ideal so that inelastic losses of the Ti(LMM) Auger peak can affect the result of factor analysis for the P(LVV) peak located at ca. 250 eV lower in kinetic energy. The contribution of such losses to the background can be corrected by shifting the spectra so that the high energy side above the peak equals zero. Numerical differentiation can introduce correlated error into the data set. To diminish edge effects the reduction of filter width at the edges and cutting off the outermost data points is recommended. The precision of spectrum reproduction is considered as a crucial test for the number of principal components. The reliability factor is investigated as a measure for the goodness of spectrum reproduction.     

Depth Profile Analysis on the Nanometer Scale by a Combination of Electron Probe Microanalysis (EPMA) and Focused Ion Beam Specimen Preparation (FIB)

Electron probe microanalysis (EPMA) offers high sensitivity and high accuracy in quantitative measurements of chemical compositions and mass coverages. Owing to the low detection limits of the wavelength-dispersive technique, monolayers with mass coverages of about 0.05µgcm^–2 can be detected. Assuming a density of 5gcm^–3 this corresponds to a thickness of 0.1nm. With these advantages in mind, EPMA was extended to depth profile analysis in the sub-micron range using a surface removal technique.The present paper shows how depth profile analysis can be improved by combining EPMA and the focused ion beam (FIB) technique. The focused ion beam system uses a Ga⁺ ion beam. The ion beam allows the milling of defined geometries on the nanometer scale, so that very shallow bevels with exactly defined angles in relation to the surface can be obtained. Low surface damage is expected due to low sputtering effects. Calibrated WDX measurements along the bevel deliver quantitative concentration depth profiles. First results obtained with this new combination of methods will be presented for a multilayered sample used in optical data storage.     

EPMA and Quantitative MCs+-SIMS of Metal-DLC Coating Materials

 Compositional characterization of metal-DLC (metal-containing diamond-like carbon) hard coatings is carried out by (WDS)-EPMA and MCs⁺-SIMS. EPMA enables accurate (± 5% relative) quantitative analysis including minor concentrations (0.1–10 at%) of N, O and Ar. Under conditions of “near-surface” EPMA (E₀ < 10 keV) the influence of surface oxide films on “pure” metal standards may be a limiting factor in respect of accuracy. Depth profiling of sufficiently “thick” layered structures (film thickness ≥ 2 μm) is carried out by EPMA-line scans along mechanically prepared bevels. The depth resolution is about 0.2 μm. SIMS in the MCs⁺-mode enables high resolution (< 20 nm) depth profiling of metal-DLC layered structures including the determination of H (1–20 at%). MCs⁺-SIMS, i.e. employing Cs⁺ primary ions and monitoring MCs⁺ molecular secondary ions (M is the element of interest) is presented as a promising route towards sufficiently accurate (10–20%) SIMS-quantification. Matrix-independent relative sensitivity factors for MCs⁺-SIMS are derived from homogeneous coating materials defined by EPMA. EPMA proves to be also useful to detect problems related to SIMS of Ar in metal-DLC materials. The combination EPMA-SIMS is demonstrated as an effective analytical strategy for quality control in industrial production and to support the development of metal DLC layered structures with optimum tribological properties.     

Study of Thin Oxide Films by Electron, Ion and Synchrotron Radiation Beams

 Titanium oxide and zirconium oxide thin films deposited on silicon substrates were characterised using electron probe microanalysis (EPMA), Rutherford backscattering spectroscopy (RBS), time-of-flight elastic recoil detection analysis (TOF-ERDA) and scanning photoelectron microscopy (SPEM). The composition and mass thickness of the films were determined and the results of different methods compared. It was revealed that the synchrotron radiation used for SPEM studies caused considerable modification of zirconia films grown at low temperatures.     

Examination of the Spatial Distribution of Dyes and Polymers in Thin Films by Two-Photon Microscopy

Summary.  Two-photon absorption induced fluorescence microscopy was used as a tool for the examination of the spatial distribution of a thin dye film. The two-photon absorption induced fluorescence signal is essentially the same as that produced by excitation with a single photon of equivalent energy. When femtosecond pulses are focused into a sample there is an intrinsic spatial selectivity of the two-photon emission signal, since it is dependent upon the square of the light intensity. This has tremendous implications in fluorescence microscopy. Since two-photon absorption is confined in a small region at the focal waist of an objective lens, photodamage and photobleaching of the sample are significantly reduced. In addition, the two-photon signal has inherent z-axis spatial resolution, which facilitates the construction of 3-D images. In the present work an application of this technique to a thin film of a dye is presented. The method can generally be applied to thin films made from photonic polymers. Received June 23, 2000. Accepted (revised) July 31, 2000     

XRF Analysis of Microsamples of Semiconductor Type Multielement Materials by the Thin Layer Method. Determination of Cr, Co, Ni, Cu, Zn, Ga, Se, Sb, Yb

 A simple and quick method of durable samples preparation by the thin layer method through direct digesting of the analysed material on the substrate has been presented. Four- and three-component mono- and polycrystals have been analysed. Standards have been used in calibration containing: Cr, Co, Ni, Cu, Zn, Ga, Se, Sb, Yb. To improve the correlation between the concentration and the fluorescent radiation models of mathematical corrections have additionally been used: multiple linear regression, Lucas-Tooth-Pyne model (L. T. P.) and de Jongh model (d. J.). Statistical parameters: detection limits for 0.5 mg samples: Cr–0.041%, Co–0.034%, Ni–0.042%, Cu–0.053%, Zn–0.054%, Ga–0.057%, Se–0.057%, Sb–0.113%, Yb–0.077%. Correlation coefficients: simple regression 0.9946–0.9997, multiple regression 0.9974–1.0000, L. T. P. 0.9993–1.0000, d. J. 0.9995–1.0000. Received August, 1, 1998. Revision March 25, 1999.     

The Effect of Surface Terminations on the Initial Stages of TiO2 Deposition on Functionalized Silicon

As atomic layer deposition (ALD) emerges as a method to fabricate architectures with atomic precision, emphasis is placed on understanding surface reactions and nucleation mechanisms. ALD of titanium dioxide with TiCl₄ and water has been used to investigate deposition processes in general, but the effect of surface termination on the initial TiO₂ nucleation lacks needed mechanistic insights. This work examines the adsorption of TiCl₄ on Cl−, H−, and HO− terminated Si(100) and Si(111) surfaces to elucidate the general role of different surface structures and defect types in manipulating surface reactivity of growth and non-growth substrates. The surface sites and their role in the initial stages of deposition are examined by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Density functional theory (DFT) computations of the local functionalized silicon surfaces suggest oxygen-containing defects are primary drivers of selectivity loss on these surfaces.     

Nanometer-Scale Chemical Surface Analysis by Scanning (Tunnelling) Atom Probes

 An overview is given of the developments in the area of chemical surface analysis on the nanometer scale by ion mass spectrometry. Two main types of instrumentation are described. In one (the ‘scanning atom probe’, SAP), an extraction electrode with a small aperture ( < 10 μm) is scanned at a short distance ( < 10 μm) from a rough surface. Field evaporation of atoms or small clusters from natural or artificial microtips at the surface and time-of-flight (ToF) analysis reveal the surface composition. In the other type (the ‘scanning tunnelling atom probe’, STAP), atoms or small clusters are transferred from a surface of a specimen to an STM tip. Subsequent field desorption from the tip and ToF analysis reveal the transferred particle’s identity. First applications of constructed S(T)AP instruments show the capabilities and limitations of this new technique. Various designs and applications are described and factors that steer maturation and further developments are discussed. These factors are either intrinsic to the technique (e.g., surface diffusion, field evaporation, material transfer, etc.) or related to general developments in the science of small objects or thin films. The final goal is chemical analysis of single atoms or molecules from specific atomic surface sites.     

Influence of Residual Polyesterification Catalysts on the Curing of Polyesters

 Unsaturated polyesters are synthesized by means of polyesterification, often with catalysts like strong acids, metal oxides and metal-organic salts. Most often, the catalysts used cannot be separated from the bulk of the polyester. Also, some organic or inorganic additives – called fillers – which are used with the polyester in order to decrease cost, affect the curing of the polyester. In this work the effect of residual catalyst on the curing of unsaturated polyester is studied. Unsaturated polyesters were prepared using propylene glycol with a 10% molar excess over stoichiometry and a mixture of dicarboxylic acids, namely maleic acid (unsaturated) adipic acid (saturated) and phthalic anhydride (saturated) at a molar ratio 1:2:2. Lead dioxide, p-toluenesulfonic acid and zinc acetate were used as catalysts, at 0.1% w/w. After the polyesterification, the polymers were diluted with styrene at a proportion of 100:30 w/w. The resins were cured by using MEKP (methylethylketone peroxide) as initiator and CoNp (cobalt naphthenate) as accelerator. Catalysts affect the final color of the polyester. The kinetics of curing of the resins was studied by DSC analysis based on the exothermic peak due to the double bonds breaking to give crosslinked macromolecules. The heat released ΔH is decreased by the presence of catalyst, while activation energy, the frequency factor and the order of reaction are increased.     

Characterization of Defects in Glasses and Coatings on Glasses by Microanalytical Techniques

 The most relevant defects in glasses and thin films on glasses are categorized and investigated by the appropriate microanalytical techniques. Knots, which are local glassy inclusions, are described in greater detail. The combination of EPMA/EDX and LA-ICP-MS allow the determination of element concentrations in the defect down into the low ppm range, thus finally enabling the identification of a special source of the defect from otherwise non distinguishable refractories. The results of analysis of stones and striae are reported and defect sources are discussed. Local defects in thin films are characterized which can be explained by high intrinsic compressive stress in the films. Typical glass and thin film defects are used to illustrate the problem-solving process in industrial labs.     

A New Method to Examine Interfacial Reactions of a Multilayered System NiAl–Hf–hBN on a Sapphire Fibre

Fibre reinforced NiAl offers new possibilities for the development of high strength structural materials of low density applicable in gas turbines at high operating temperatures. The properties of composite materials are strongly influenced by the strength of the fibre–matrix interface. In addition, if fibre and matrix differ in their thermal expansion coefficients, a well controlled interface reaction at high temperature changes is demanded. Therefore, two layers consisting of BN and Hf were embedded between a sapphire fibre and NiAl and heated at 1350 °C to find a compromise between adhesion and ductility. The control and characterization of the reaction zone is essential for the development of these new materials. Especially, the characterization of the fibre-coating interface is a challenge. The different hardness of fibre and coating makes it nearly impossible to use a conventional cross-section preparation. Further, the small dimension of the reaction zone requires the use of analytical techniques providing high lateral resolution. In order to accomplish these requirements, a newly developed technique FIB (Focused Ion Beam)-EPMA (Electron Probe Microanalysis) was combined with XRD (X-ray diffraction). XRD was performed for the identification of the phases. The reaction zone was exposed by a special FIB preparation technique and examined by surface-sensitive EPMA. This allowed to determine the spatial distribution of the different phases.     

Applications of Electron Microbeam Analysis in the Earth Sciences

 Naturally formed geological materials are not constrained in the number of elements which may be present and a wide range of concentrations can be expected. Oxides are a frequent component and water may be present. The particular problems posed for quantitative analysis in some representative applications are described and solutions suggested. Critical testing of the results for consistency with mineral formulae and for repeatability provides confidence in those results. Examples of applications of quantitative analysis of minerals are used to show the variety of problems encountered in electron microbeam analysis and how the analytical results can be used to determine the conditions (time, pressure, temperature) of the minerals or the rocks in which they occur.     

Application of Sputter-Assisted EPMA to Depth Profile Analysis

 A common problem in depth profile measurement is the calibration of the depth scale. The new technique of sputter assisted electron probe microanalysis offers the possibility of calculating the composition as well as the depth scale solely from the acquired X-ray intensity data without further information, e.g. sputter rates. To achieve a depth resolution that is smaller than the depth of information of the electron probe, i.e. 0.1–1 μm, special deconvolution algorithms must be applied to the acquired data. To assess the capabilities of this new technique it was applied to a Ti/Al/Ti multilayer on Si under different measurement conditions. Quantitative depth profiles were obtained by application of a deconvolution algorithm based on maximum entropy analysis. By comparison of these profiles with AES depth profiles and AFM roughness measurements, it was shown that the limiting factor to the achievable depth resolution is the occurrence of surface roughening induced by the sputtering process rather than the relatively large depth of information of the electron probe. We conclude that for certain applications sputter-assisted EPMA can be regarded as a valid depth profiling technique with a depth resolution in the nm range.     

Understanding the History of Rocks by the Use of Microbeam Analysis Techniques

 In order to understand the physical and chemical processes that occur in complex systems such as geological materials, one needs to look at the minerals involved on as fine a scale as possible; studying the mutual relationships among the different phases in terms of texture, chemical composition, zonation, etc., in the original petrographic context. This paper reports how the study of a rock through microanalysis can be done. The potentialities of the various microanalytical techniques such as electron microprobe analysis (EMPA), cathodoluminescence (CL), particle-induced X-ray emission (PIXE), secondary ion mass spectrometry (SIMS) and accelerator mass spectrometry (ASM) are presented. Each of them has its own characteristics and limits. And only through a multiple-technique approach it is possible to investigate the various components of the rock system and from this, unravel its history.     

Influence of Al2O3 Nanoparticles on the Thermal Stability of Ultra-Fine Grained Copper Prepared by High Pressure Torsion

Summary.  Ultra-fine grained (UFG) Cu (grain size 80 nm) containing 0.5 wt.% Al₂O₃ nanoparticles (size 20 nm) was prepared by high pressure torsion (HPT). Positron lifetime spectroscopy was employed to characterize the microstructure of this material, especially with respect to types and concentration of lattice defects. The evolution of microstructure with increasing temperature was studied by positron lifetime spectroscopy and X-ray diffraction measurements. The thermal stability of the Cu + 0.5 wt.% Al₂O₃ nanocomposite was compared with that of pure UFG Cu prepared by the same technique. The processes taking place during thermal recovery of the initial nanoscale structure in both studied materials are described. Received October 5, 2001. Accepted (revised) December 20, 2001