Anisotropic profile decay on perturbed Au(111) vicinal surfaces

The anisotropy of the surface free energy has a large influence on the decay rate of periodic surface profiles at temperatures below the roughening temperature. This has been demonstrated by a study of the periodic surface profiles that were etched into vicinal Au(111) crystals in two orientations: with their wavevector parallel (ψ = 0) and perpendicular (ψ = π/2) to the intrinsic step direction of the vicinal surface. Due to this modulation, steps become either oscillatory in shape or remain straight, with their average separation modulated. Accordingly, profile decay is driven primarily by step self-energy (ψ = 0) or step interaction energy (ψ = π/2). The rate of decay was measured under ultra-high vacuum conditions at 750°C using a scanning tunneling microscope for imaging. A large anisotropy of decay was observed on two vicinal crystals of 1.5 and 5° miscut, with the ψ = 0 decay being much faster than with ψ = π/2). The results are evaluated and discussed in the framework of recent theory.     

Reconstruction behaviour of fcc(110) transition metal surfaces and their vicinals

The fcc(110) surfaces are well known for their strong tendency to missing-row (MR) type reconstructions either in the clean state (Au, Pt) or driven by adsorbates (Ni, Cu, Pd, Ag). The present knowledge on the different reconstruction behaviour of flat (110) surfaces is reviewed. The survey focuses on recent scanning tunneling microscopy (STM) studies, which for the first time also elucidate the dynamics of the reconstruction process for the various systems. An overview of our recent STM and low energy electron diffraction studies on vicinal Au(110) and Ni(110) surfaces is given, aiming for a deeper understanding of the influence of steps on reconstruction behaviour of fcc(110) surfaces on the one hand, and on the stability of reconstructing vicinal surfaces on the other. Finally, we report on the reconstruction behaviour of Ir(110), which stabilizes in the clean state by formation of mesoscopic (331) facets and dereconstructs to the (1×1) phase upon oxygen adsorption at 700–900 K.     

Observation of sputtering damage on Au(111)

The morphology of a Au(111) surface has been observed with the STM (scanning tunneling microscope) after ion bombardment with 2.5 keV Ne⁺ ions at about 400 K. Mostly triangular and hexagonal shaped vacancy islands are seen in the STM topographs. They are bounded by monatomic steps, oriented along the closed packed 110 directions. The general morphology confirms the conclusions inferred from TEAS (thermal energy atom scattering) measurements on ion bombarded Pt(111) surfaces. The observation of a propensity for the formation of {100} microfacetted 110 ledges is discussed.     

The role of surface steps in the asymmetric surface dislocation nucleation in vicinal heterostructures with compressive and tensile stresses

The surface nucleation of misfit dislocations in vicinal (001)-oriented heterostructures is discussed. It is shown that beside the asymmetrical stressing of opposite dislocation slip planes due to the vicinal substrate, the surface steps have a similar effect. The effect of the steps has the same-sign asymmetry for a compressive stressed epilayer, but is opposite in the tensile case. The effect on dislocation nucleation energy is calculated. For miscut angles used normally, the step energy contribution exceeds that due to the vicinal substrate. The effect on epilayer tilting is also discussed.     

The surface and interface nucleation of misfit dislocations as a possible source of asymmetric strain relaxation in vicinal heterostructures

The surface nucleation of misfit dislocations in vicinal (001) oriented heterostructures with compressive and tensile stresses is discussed. It is shown that beside the asymmetrical stressing of opposite dislocation slip planes due to the vicinal substrate, the surface steps have a similar effect. The effect of the steps has the same-sign asymmetry for a compressive stressed epilayer, but opposite for the tensile case. The effect on dislocation nucleation energy is calculated. For miscut angles used normally, the step energy contribution exceeds that of due to the vicinal substrate. The extension to interface nucleation is treated qualitatively.     

Steps and facets on annealed LaAlO3{100} and {110} surfaces

Lanthanum-aluminate (LaAlO₃) is one of the optimum substrates for epitaxic growth of thin oxide films. In this paper, the structures of the {100} and {110} surfaces of annealed LaAlO₃ are studied using reflection electron microscopy (REM). 010 steps have been observed on {100}, these are the lowest energy steps. The {100} surface is atomically flat, but the {110} surfaces exhibit high-density fine structures distributed on large surface terraces. These fine structures correspond to the formation of small width (100) and (010) facets on the (110) surface. A growth model is given to interpret the formation of large steps and large terraces on the {110} surfaces.     

Self-organized nanoscale pattern formation on vicinal Si(111) surfaces via a two-stage faceting transition

We demonstrate a self-organized pattern formation on vicinal Si(111) surfaces that are miscut toward the [2;11] direction. All the patterns, consisting of a periodic array of alternating (7 x 7) reconstructed terraces and step-bunched facets, have the same periodicity and facet structure, independent of the miscut angle, while the width of the facets increases linearly with miscut angle. We attribute such unique pattern formation to a surface faceting transition that involves two transition stages: the first stage forms a stress-domain structure defining the universal periodicity; the second stage forms the low-energy facets controlling the facet width.     

Atomistic structure of stepped surfaces

Atomistic computer simulation with embedded atom method (EAM) interatomic forces was used to study the structure of surface steps on the {111} unreconstructed surface in fcc metallic materials. The energetics and local atomic relaxation behavior of ledges parallel to the 110 direction were studied using a potential describing lattice properties of Au. The vacancy formation energies in the stepped surfaces was also studied, and it was found that the energy of formation of a vacancy in a terrace is the same as that in the perfect unstepped surface. This value is 30% lower than that of the bulk. The vacancy formation energy in the ledge is reduced by a factor of two with respect to that of the terraces. The structure of the “up ledge” (A step) is different from the “down ledge” (B step). These differences do not significantly affect the energy of the ledges, although they do affect the vacancy formation energies in sites in the second surface layer near the ledge. The implications of the results for the formation of kinks and the general structure of high index surfaces are discussed.     

Atomic and electronic structure of steps and kinks on MgO(100) and MgO(110)

The electronic and atomic structure of vicinal MgO surfaces are studied using a quantum self-consistent method associated with a geometry optimization code. 10n, (n + 1)0n and n1n surfaces, with periodic monoatomic steps separating {001} or {101} terraces, are considered. Diatomic steps along the {10n} orientation and periodic kinks on the {3 1 10} surface are also modelled. We assign most electronic peculiarities of stepped surfaces to the values of the Madelung potential acting on the under-coordinated atoms, which is a function of their first and second coordination numbers. An analytical model is proposed to explain the bond contractions around these atoms. Finally the microscopic contributions to the step energy are discussed, together with the strength of the step interaction as a function of their separation.     

High-temperature morphology of stepped gold surfaces

Molecular dynamics simulations with a classical many-body potential are used to study the high-temperature stability of stepped non-melting metal surfaces. We have studied in particular the Au(111) vicinal surfaces in the (M + 1,M− 1,M) family and the Au(100) vicinals in the (M,1,1) family. Some vicinal orientations close to the non-melting Au(111) surface become unstable close to the bulk melting temperature and facet into a mixture of crystalline (111) regions and localized surface-melted regions. On the contrary, we do not find high-temperature faceting for vicinals close to Au(100), also a non-melting surface. These (100) vicinal surfaces gradually disorder with disappearance of individual steps well below the bulk melting temperature. We have also studied the high-temperature stability of ledges formed by pairs of monatomic steps of opposite sign on the Au(111) surface. It is found that these ledges attract each other, so that several of them merge into one larger ledge, whose edge steps then act as a nucleation site for surface melting.     

Local Au coverage as driving force for Au induced faceting of vicinal Si(0 0 1): a LEEM and XPEEM study

Adsorption of Au at 850°C on a regular stepped 4° vicinal Si(0 0 1) surface results in a dramatic change of the step morphology: the surface decomposes into areas which are perfectly flat with a (0 0 1) orientation and (1 1 9) facets. Low energy electron microscopy shows the dynamics of the faceting process in real space while X-ray photoemission electron microscopy (XPEEM) allows a spatially resolved determination of the Au coverage at different stages of the faceting process. At a critical Au coverage of ≈1/3 ML (0 0 1) terraces are formed which extend anisotropically along the step edges of the surface. The steps in between the terraces bunch and form step bands in order to conserve the macroscopic miscut of the sample. Driving force for this morphological transformation is a complex (5×3.2) reconstruction formed on the (0 0 1) terraces. XPEEM shows this phase separation also for the Au coverage: on the (0 0 1) terraces the Au coverage is up to 40% higher compared to the step bands. With further increasing Au coverage the width of the Au rich terraces increases while the step bands become steeper. In a second step Au adsorbs on the step bands transforming them into well defined and smooth (1 1 9) facets.     

Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy

Surfaces of 6H-SiC(0001) homoepitaxial layers deposited on vicinal (3.5° off (0001) towards [11 0]) and on-axis 6H---SiC wafers by chemical vapour deposition have been investigated using ultra-high vacuum scanning tunneling microscopy. Undulating step configurations were observed on both the on-axis and the vicinal surfaces. The former surface possessed wider terraces than the latter. Step heights on both surfaces were 0.25 nm corresponding to single bilayers containing one Si and one C layer. After annealing at T>1100°C for 3–5 min in UHV, selected terraces contained honeycomb-like regions caused by the transformation to a graphitic surface as a result of Si sublimation. A model of the observed step configuration has been proposed based on the observation of the [ 110] or [1 10] orientations of the steps and energetic considerations. Additional deposition of very thin (2 nm) SiC films on the above samples by gas source molecular beam epitaxy was performed to observe the evolution of the surface structure. Step bunching and growth of 6H---SiC layers and formation of 3C---SiC islands were observed on the vicinal and the on-axis surfaces, respectively, and controlled by the diffusion lengths of the adatoms.     

Unidirectional hexagonal rare-earth disilicide nanowires on vicinal Si(100)-2×1

Rare-earth disilicide nanowires grown on vicinal Si(100) with a miscut of 2–2.5° toward the [110] azimuth at 600 °C were studied by scanning tunneling microscopy and compared with those grown on flat Si(001). In contrast to rare-earth disilicide nanowires grown on flat Si(100) surfaces, the nanowires grow unidirectionally along the [01̄1] direction of the vicinal Si(100) surface. Rare-earth disilicide nanowires form bundles composed of single nanowire units on both flat and vicinal surfaces. Yet, on the vicinal surface, the bundle width is comparable to the width of the terrace. The average nanowire length on the vicinal substrate is longer than that on the flat substrate. Scanning tunneling spectroscopy shows that the rare-earth disilicide nanowires have metallic properties. PACS 81.07.Vb; 81.16.Dn; 68.65.La; 68.37.Ef     

Impact of the growth on the stability–instability transition at Si (111) during step bunching induced by electromigration

The central result of this work is the definite proof that the mechanisms of the direct current induced step bunching in the middle and high temperature domains are different. We used the recently developed technique for reflection electron microscopy (REM) observation of Si surfaces during equilibrium and during crystal growth to document the impact of the growth on the process of step bunching induced by direct current heating of an Si crystal. We found completely different effects of crystal growth on the stability of the vicinal surfaces in the two temperature domains 1160–1240°C and 1260–1320°C. In the high temperature domain step bunching takes place at step-down direction of the electric current during sublimation, equilibrium and growth; whereas in the 1160–1240°C domain bunching takes place at step-up current during sublimation and at step-down current during growth. These findings support the concept of local mass transport in the high temperature domain — the surface migration of adatoms is effectively interrupted at each step by a high rate exchange between the adlayer and the crystal phase. At 1160–1240°C the mass transport is global — adatoms easily cross the steps without taking part in the crystal–adlayer exchange. Since earlier studies of other researchers support the concept of local mass transport in the low temperature domain, 900–1050°C, a difficult question arises — why do the properties of the steps, with respect to the mass transport over the crystal surface, have a temperature dependence which is not monotonous? To explain the transition from local mass transport in the low temperature domain to global mass transport in the middle temperature domain we advance a hypothesis for a transition from a low temperature state of adsorption (Takayanagi-like adatoms, existing above the (7×7)↔(1×1) transition) to a high temperature state of adsorption (adatom with three dangling bonds) with much lower activation energy for desorption.     

ARPES and STS investigation of noble metal Shockley states: Confinement in vicinal Au(1 1 1) surfaces and self-organized nanostructures

Spectroscopic effects associated with the superperiodic surface structure have been observed in Au(1 1 1) vicinal surfaces and nanostructured systems. In the vicinal Au(23 23 21) surface, high resolution angle resolved photoemission spectroscopy shows the opening of several gaps in the surface band structure, whereas scanning tunneling spectroscopy reveals the energy dependence of the electronic density. These combined spectroscopic data allow to determine the reconstruction potential by deducing their first Fourier components. We also demonstrate that due to the peculiar growth on this Au vicinal surface, we can obtain a self-assembled superlattice of triangular Ag islands. The high ordering of the nanostructures leads to homogenous electronic properties.     

Comment on the “cross-channel diffusion mechanism on the Pt(110) surface” BY S.H. Garofalini and T. Halicioglu

It is known that the Pt(110) surface exhibits in its stable state a 1 × 2 reconstruction. It seems therefore not appropriate to compare theoretical surface diffusion coefficients calculated for the regular, non-reconstructed Pt(110) surface with the experimental data obtained by field ion microscopy. In particular, the process of cross-channel diffusion by atom exchange which is observed on the regular (110) surface by molecular dynamics simulations may have no relationship to the experimental findings of cross-channel adatom diffusion on reconstructed Pt(110) and Ir(110) surfaces. An alternate mechanism for easy cross-channel adatom diffusion on reconstructed (110)?1 × 2 surfaces of Pt and Ir is proposed.     

Energy barriers of single-adatoms diffusion on unreconstructed and reconstructed (110) surfaces

The present paper is aimed mainly to investigate theoretically the diffusion of Ag, Cu, Au and Pt adatoms on the (1 × 1) unreconstructed geometry for Ag, Cu and Pt (110), and reconstructed geometries ((1 × 2), (1 × 3) and (1 × 4)) for Pt and Au (110) surfaces. We consider the single adatom diffusion when additional atoms are deposited in adjacent row. For this study, we have used the molecular statics simulations combined with the embedded atom method. For several systems, we have calculated the activation barriers for hopping mechanism. For the diffusion on the unreconstructed surfaces, the trends for the activation barriers are the same for all considered systems except for Cu/Ag (110) system, where the activation barrier do not change. Further, our results indicate that additional atoms lead to a small decreasing of activation barriers for diffusion on reconstructed surfaces for some systems, while for other systems; the activation barrier remains practically unchanged.     

Au(110)表面结构和氧原子吸附的第一性原理研究

用密度泛函理论(DFT)研究了金属Au(110)表面结构以及氧原子的吸附状态.计算得到Au(110)-(1×2)缺列再构表面原子的弛豫分别是-15.0%(Δd₁₂/d₀)和-1.1%(Δd₂₃/d₀),表面能为52.7 meV/²,功函数Φ=5.00 eV;Au(110)-(1×3)缺列再构表面的Δd_{1 关键词： 缺列再构Au(110)表面 STM图像 氧原子吸附}     

Co chemisorption on PtCu surfaces III. CO on PtCu(111)

Selected thermal desorption and valence band photoemission data on the chemisorption of CO on PtCu(111) surfaces are presented. The main objective is to make a comparison with CO chemisorption on an annealed (1 × 3) reconstructed Pt_0.98Cu_0.02(110) surface. The (111) alloy surfaces are unreconstructed (1 × 1) surfaces, with average near-surface Cu concentrations ranging from ? 7.5% to ? 20% as indicated by the Cu 920 eV Auger signal. It is observed that the effect of alloying Pt(111) with Cu is to progressively lower the desorption peak temperature and hence the free energy of CO desorption from Pt sites. A second observation is that the energy distribution of the Cu 3d-derived states is little affected by CO adsorption on Cu sites at 155 K. Both these results offer a contrast to the results for CO/Pt_0.98Cu_0.02(110) reported earlier.     

An AFM study of the processing of hydrogen passivated silicon(1 1 1) of a low miscut angle

We present atomic force microscopy (AFM) measurements from a passivated silicon crystal miscut by 0.1° and show the etching regime to be significantly different from surfaces with a larger miscut angle. A simple kinetic model is developed to explain the results and is used to derive the optimal etching conditions for nominally flat Si(1 1 1)–(1×1)H. We show that small changes in miscut angle can alter the kinetic steady state and promote the formation of deep etch pits, even on the least stable, miscut surface. Collisions of steps with these pits result in arrays of stable, self-aligned ‘etch hillocks' over micron dimensions. Following preparation, we use AFM to observe the initial growth of native oxide on the Si(1 1 1)–(1×1)H surface, and demonstrate that AFM is a sensitive probe to surface oxidation in the sub-monolayer regime.