Inorganic Thin Films Prepared from Soluble Powders and Their Applications

Sol-gel processing has proved to be a useful method for the preparation of a wide range of inorganic thin films. However, gelation or precipitation of coating solutions and thus limited shelf-life have been drawbacks for the industrial application of this technology.Soluble powders of various compositions can be prepared from modified metal alkoxides commonly employed in sol-gel processing. Even though these powders contain a considerable amount of organic moieties they can be stored indefinitely under ambient conditions, thus diminishing shelf life problems. Redissolution in polar organic solvents, solvent mixtures or even water yields ready-to-use coating solutions. Coating solutions for the preparation of titania (TiO₂), zirconia (ZrO₂) and lead zirconate titanate (PbTi _x Zr_1–x O₃, PZT) films have been synthesized by this method. Thickness, microstructure and properties of the resulting films can be varied by modification of the solvent, the coating procedure and thermal treatment. Inorganic thin films for various applications have been prepared.     

Effect of biphase on dielectric properties of Bi-doped lead strontium titanate thin films

Pb_0.4Sr_0.6TiO₃ (PST) thin films doped with various concentration of Bi were prepared by a sol-gel method. The phase status, surface morphology and dielectric properties of these thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance analyzer, respectively. Results showed that the thin films with the maximum dielectric constant and minimum dielectric loss were obtained for x=0.15. For x<0.15, only pure PST perovskite phase were in the thin films. For 0.2<x<0.4, the PST/Bi₂Ti₂O₇ biphase were obtained. The thin films with pure Bi₂Ti₂O₇ pyrochlore phase were obtained for x=0.67. The biphase thin films had high tunability and high figure of merit (FOM). The FOM of PST/Bi₂Ti₂O₇ biphase thin film was about 6 times higher than that thin films formed with pure perovskite phase or pure pyrochlore phase.     

Preparation and Characterization of SiO2-MxOy(M = V, Sn, Sb) Thin Films from Silicic Acid and Metal Chlorides

The preparation of SiO₂-M _x O _y (M = V, Sn, Sb) binary oxide thin films by sol-gel method was investigated. The reaction of silicic acid with metal chloride (M = Sn and Sb) or oxychloride (M = V) formed homogeneous solutions. The dip-coating of slide glass and silicon wafer followed by heat treatment gave oxide films having Si—O—M bond. The changes of FT-IR spectra as a function of heat treatment temperature and molar composition confirmed the Si—O—M bonds. The sheet resistance of films increased with an increase on heat treatment temperature and decrease in the content of metal oxide M _x O _y . X-ray diffraction peaks were observed for the SiO₂-V₂O₅ films with high V₂O₅ contents and heat-treated above 250°C, while the others were amorphous. Oxide films heat treated at 500°C had a thickness between 340–470 nm.     

High sensitivity and rapid detection of KRAS and BRAF gene mutations in colorectal cancer using YbTixOy electrolyte-insulator-semiconductor biosensors

The KRAS and BRAF genes are attractive for a predictive biomarker to determine whether the colorectal cancer (CRC) patient predicts response to anti-epidermal growth factor receptor treatment. The detection of KRAS and BRAF mutation statuses has to be considered as a diagnostic and prognostic factor for the treatment of metastatic CRC patients because the targeted therapy may be expensive as well as toxic. In this work, we develop an YbTi_xO_y electrolyte-insulator-semiconductor (EIS) biosensor to detect the KRAS and BRAF gene mutations in CRC. X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and secondary ion mass spectrometry were used to explore the structural features of YbTi_xO_y films prepared under three Ti plasma power conditions. We found that the YbTi_xO_y-based EIS sensor fabricated at the 80 W condition exhibited a higher sensitivity of 69.54 mV/pH (in pH range 2–12), a lower hysteresis voltage of 1 mV (in pH loop of 7→4→7→10→7), and a smaller drift rate of 0.15 mV/h (in pH 7) than those of the other Ti plasma power conditions. Furthermore, we successfully demonstrated that the single strain DNA probe-immobilized YbTi_xO_y EIS biosensors functionalized with 3-aminopropyl triethoxysilane followed by glutaraldehyde were screened for the KRAS and BRAF gene mutations in CRC. High sensitivity and rapid detection of the YbTi_xO_y-based EIS biosensor are expected to serve as the diagnostic tool for clinical examination and screening with CRC.     

Facile Synthesis of Fe<Subscript>x</Subscript>O<Subscript>y</Subscript>/Ag Nanocomposites for Multifunctional and Efficient Catalytic Applications

In this study, the iron oxide/silver (Fe_xO_y/Ag) nanocomposite has been successfully prepared by a facile one-step method using goethite (α-FeOOH) rods as support. The diameter of the as-synthesized goethite rods was between 250 and 500 nm and the silver nanoparticles sizes were about 10–50 nm. By varying the concentrations, the Fe_xO_y/Ag nanocomposite with different Ag contents are successfully obtained. The Fe_xO_y/Ag nanocomposite was characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and energy dispersive spectroscopy, respectively. Due to the unique nanostructure, these nanocomposites can catalyze degradation of both aromatic nitro compounds and organic dyes only within a few minutes, which show high catalytic performance.     

XANES and XPS characterization of hard amorphous CSixNy thin films grown by RF nitrogen plasma assisted pulsed laser deposition

Amorphous carbon silicon nitride thin films were grown on (100) oriented silicon substrates by pulsed laser deposition (PLD) assisted by an RF nitrogen plasma source. Up to about 30 at. % nitrogen and up to 20 at. % silicon were found in the hard amorphous thin films by XPS in dependence on the composition of the mixed graphite / Si₃N₄ PLD target. The universal nanohardness was measured to be at maximum load force of 0.1 mN up to 23 GPa for thin CSi_xN_y films with reference value of 14 GPa for single crystalline silicon. X-ray photoelectron spectroscopy (XPS) of CSi_xN_y film surfaces showed a clear correlation of binding energy and intensity of fitted features of N 1s, C 1s, and Si 2p peaks to the composition of the graphite / Si₃N₄ target and to nitrogen flow through the plasma source, indicating soft changes of binding structure of the thin films due to variation of PLD parameters. Auger electron spectroscopy (AES) of Si KL₂₃L₂₃;¹D Auger transition gave a detailed view of bonding structure of Si in the CSi_xN_y films. The intensity of π* and σ* resonances at the carbon K-edge X-ray absorption near-edge structure (XANES) of the CSi_xN_y films measured at BESSY I corresponded to the nanohardness of the CSi_xN_y films, thus giving insight into chemical binding structure of superhard amorphous materials.     

Preparation of lead and tin oxide thin films by spin coating and their application on the electrodegradation of organic pollutants

In this work, lead and tin oxide films (Pb _x O _y /SnO₂) were prepared, using the spin coating technique. The influence of the temperature and duration of the thermal treatment on the final film composition were analysed. The metallic oxide films that were prepared, Pb _x O _y /SnO₂, were characterized by means of XRD, SEM/EDS and cyclic voltammetry. When different experimental preparation conditions were used different lead oxide phases were obtained. The electrochemical studies show that the films are stable and can be used as electrodes. Finally the films were tested as electrodes for the electrochemical degradation of a CHCl₃ aqueous solution.     

High dielectric constant PrYxOy sensing films electrolyte-insulator-semiconductor pH-sensor for the detection of urea

In this paper, we describe the structural and sensing properties of high-k PrY_xO_y sensing films deposited on Si substrates through reactive co-sputtering. Secondary ion mass spectrometry and atomic force microscopy were employed to analyze the compositional and morphological features of these films after annealing at various temperatures. The electrolyte-insulator-semiconductor (EIS) device incorporating a PrY_xO_y sensing membrane that had been annealed at 800 °C exhibited good sensing characteristics, including a high sensitivity (59.07 mV pH⁻¹ in solutions from pH 2 to 12), a low hysteresis voltage (2.4 mV in the pH loop 7 → 4 → 7 → 10 → 7), and a small drift rate (0.62 mV h⁻¹ in the buffer solution at pH 7). The PrY_xO_y EIS device also showed a high selective response towards H⁺. This improvement can be attributed to the small number of crystal defects and the large surface roughness. In addition, the enzymatic EIS-based urea biosensor incorporating a high-k PrY_xO_y sensing film annealed at 800 °C allowed the potentiometric analysis of urea, at concentrations ranging from 1 to 16 mM, with a sensitivity of 9.59 mV mM⁻¹.     

Photocatalytic Activity and Characterization of the Sol-Gel Derived Pb-Doped TiO2 Thin Films

Photocatalytically active Pb-doped TiO₂ thin films were prepared on a soda-lime glass substrate by sol-gel dip-coating technique using TiO₂ sols containing lead(II) nitrate. The thin films were characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), UV-VIS spectroscopy and X-ray diffraction (XRD). A shift of the UV-VIS absorption towards longer wavelengths was observed, which indicated a decrease in the band-gap of TiO₂ upon Pb doping. XRD results showed both pure and Pb-doped TiO₂ thin films were polycrystalline, anatase type, and oriented predominantly to the (101) plane. A slight shift in the d-spacing for the Pb-doped film indicated the incorporation of Pb into the TiO₂ lattice to form Pb _x Ti_1–x O₂ solid solution. AFM results showed Pb-doped TiO₂ thin films were composed of larger TiO₂ particles and had rougher surface, compared with un-doped TiO₂ thin films. XPS results showed that except for the enrichment of Pb near the surface, Pb exists in the forms of Pb _x Ti_1–x O₂ and PbO. Dimethyl-2,2-dichlorovinyl phosphate (DDVP) was efficiently degraded in the presence of the Pb-doped TiO₂ thin films by exposing the insecticide solution to sunlight. The mechanism of photocatalytic activity enhancement of the Pb-doped TiO₂ thin films was discussed.     

Study of dielectric characteristics of graded Ba<Subscript>1−x</Subscript>Ca<Subscript>x</Subscript>Zr<Subscript>0.05</Subscript>Ti<Subscript>0.95</Subscript>O<Subscript>3</Subscript> thin films grown by a sol-gel process

The compositionally graded Ba_1−xCa_xZr_0.05Ti_0.95O₃ (x = 0, 0.05, 0.10) (BCZT) thin films with compositional gradient from BaZr_0.05Ti_0.95O₃ to Ba_0.90Ca_0.10Zr_0.05Ti_0.95O₃ were deposited on Pt/Ti/SiO₂/Si substrates by sol-gel processing. The crystal structure of the thin films was determined by X-ray diffraction. Field emission scanning electron microscopy (FESEM) was used to examine crystallite size and morphology of compositionally graded thin films. The dielectric properties of compositionally graded thin films were characterized by measuring the dielectric constant and dielectric loss as a function of temperature, applied electric field and frequency. As a result, compositionally graded thin films with weak temperature dependence were realized. Dielectric constant peaks, common to a ferroelectric transition, were not observed in the temperature range from 298 to 413 K. The compositionally graded BCZT thin films with weak temperature dependence of tunability could be attractive materials for frequency and phase agile tunable microwave components such as tunable filters, tunable oscillators, and phase shifters for application in phased array antennas.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Methylammonium‐Mediated Evolution of Mixed‐Organic‐Cation Perovskite Thin Films: A Dynamic Composition‐Tuning Process

Methylammonium‐mediated phase‐evolution behavior of FA_1−xMA_xPbI₃ mixed‐organic‐cation perovskite (MOCP) is studied. It is found that by simply enriching the MOCP precursor solutions with excess methylammonium cations, the MOCPs form via a dynamic composition‐tuning process that is key to obtaining MOCP thin films with superior properties. This simple chemical approach addresses several key challenges, such as control over phase purity, uniformity, grain size, composition, etc., associated with the solution‐growth of MOCP thin films with targeted compositions.     

Mechanism of PbSe y S1 − y film formation in chemical deposition from aqueous solutions

The growth mechanism of PbSe _y S_{1 ? y} films has been studied upon chemical deposition from aqueous solutions using scanning probe microscopy. A comparative morphological analysis of layers deposited at the initial growth stages and the use of fractal formalism shows that the formation of films of PbS, PbSe, and PbSe _y S_{1 ? y} substitutional solid solutions involves cluster-cluster aggregation with self-organization elements.     

Biomimetic Approach to the Formation of Titanium Dioxide Thin Films by Using Poly(2‐(dimethylamino)ethyl methacrylate)

We demonstrate that the biomimetic method—which has been used for the formation of silica thin films—also could be applied directly to the formation of titanium dioxide (TiO₂) thin films, which are technologically important materials because of their applications to photocatalytic purifiers, photochemical solar cells, and others. After generation of poly(2‐(dimethylamino)ethyl methacrylate) (PDMAEMA) films on gold surfaces by surface‐initiated polymerization, titanium bis(ammonium lactato)dihydroxide was used as a precursor of TiO₂. The TiO₂/PDMAEMA films were successfully formed on the surfaces in aqueous solution at neutral pH (pH 6.7) and room temperature, and were characterized by X‐ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, atomic force microscopy, scanning electron microscopy, and X‐ray diffractometry. The formed TiO₂ films have an amorphous nature and large area uniformity in thickness. The degree of crystallization was controlled by annealing. We also investigated the pH effect and the phosphate incorporation in the films by using phosphate‐buffered solutions. The TiO₂ films were formed in all the employed pH values in the range of 2 to 12, but phosphate anions were found to be incorporated into the films facilely only at low pH.     

Synthesis of nanopowders of pentoxides Ta2y Nb2(1−y)O5

The processes of production of high purity nanopowders of niobium and tantalum pentoxide Ta_2y Nb_2(1–y)O₅ with a low content of fluorine and Nb₂O₅ in low-temperature polymorph were studied. Ceramic samples were prepared from a charge of solid solutions LiTa _y Nb_1–y O₃ and Li _x Na_1–x Ta _y Nb_1–y O₃ synthesized using coprecipitated pentoxide Ta_2y Nb_2(1–y)O₅. Therewith for solid solutions LixNa_1–x Ta _y Nb_1–y O₃ significantly larger values of high dielectric constant and ionic conductivity were achieved compared to the solid solutions obtained by using a mechanical mixture of Ta₂O₅ and Nb₂O₅. This converts solid solutions LixNa_1–x Ta _y Nb_1–y O₃ from acoustoelectronic and piezoelectric type of materials into the capacitor and ion-conductive type of solid materials.     

X-ray spectroscopic study of the electronic structure of boron carbonitride films obtained by chemical vapor deposition on Co/Si and CoO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/Si substrates

Boron carbonitride films are synthesized by chemical vapor deposition from a mixture of triethylamine borane and ammonia on a metallic or oxidized cobalt sublayer sprayed over Si(100) substrates. Scanning electron microscopy shows that the surface of a BC _x N _y /Co/Si sample has a homogeneous fine-grained structure; filamentous entities are found on the surface of the BC _x N _y /CoO _x /Si sample. The electronic structure of the films is investigated by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure spectroscopy (NEXAFS). An analysis of the spectra shows that BC _x N _y films are composed of graphite and hexagonal boron nitride (h-BN) regions and complex BC _x N _y O _z components with B-C, N-C, B-O, N-O, and C-O bonds. The deposition of the BC _x N _y film on the oxidized Co sublayer results in an increase in the number of C-O, N-O, B-O, and C-N bonds and a decrease of the graphite and h-BN components and in the number of C-B bonds. The XPS data are used to estimate the surface elemental composition of the BC _x N _y /CoO _x /Si sample. It is found that the film consists of 66 at.% graphite component and 3 at.% h-BN; the proportion of complex C_0.46B_0.11N_0.05O_0.38 components is 31 at.%.     

一步法制备铁氧化物/氮改性氧化石墨/碳纳米管异质结及其用于催化活化过一硫酸氢钾降解亚甲基蓝模型染料（英文）

随着较差的生物相容性和更高毒性有机染料的应用,如酚类化合物和抗生素,水污染和食品污染变得极其严重.这不仅危害人类健康,而且严重污染自然环境.过硫酸盐去污技术利用自由基活化降解过程,成为处理一系列污染物非常有效的方法;然而设计具有多功能性的高性能催化剂仍然面临着巨大的挑战.因此,本文借鉴铁基材料、氮改性石墨和碳纳米管独特的物化性质,以尿素、铁盐、氧化石墨、碳纳米管为原材料,通过一步水热法成功制备了三维多功能铁氧化物/氮改性氧化石墨/碳纳米管异质结,用作活化过一硫酸氢钾复合盐以降解有机模型污染物亚甲基甲蓝(MB),研究了高级氧化法(AOPs)作用机理和优化反应条件.XRD、红外光谱、SEM和XPS结果表明,铁氧化物通过物理静电作用力和化学键结合力已经被牢牢固定在了氮修饰的氧化石墨结构框架内.当加入了碳纳米管之后,它会与石墨形成类似于互穿聚合物网络的结构,从而具有三维材料的优点,且提升电子转移电导率,使得催化剂的结构和性能有了很大的改善.此外,优化了降解系统、PMS负载量、初始有机污染物浓度和催化剂用量等因素.结果表明,处于催化剂/PMS系统时,亚甲基蓝可以在12min之内有效地完全降解,可归结于碳、氮以及主要活性物质铁氧化物之间的协同作用.基于数据拟合分析,污染物氧化降解系统与拟一阶动力学相符合,其速率常数约为0.33 min~(-1).淬灭实验证明,硫酸根自由基和羟基自由基是主要的反应活性物种.这种同时富含铁/氮分级的多孔碳骨架异质结物质不仅可用作过渡金属催化剂,而且为制备其他异质结提供参考,以用于超级电容器、储能材料、电催化剂等领域     

Electrochemical study of spinel oxide systems with nominal compositions Ni1− x Cu x Co2O4 and NiCo2− y Cu y O4

Studies on the electrochemical behaviour of Ni_{1− x} Cu _x Co₂O₄ (x ≤ 0.75) and NiCo_{2− y} Cu _y O₄ (y ≤ 0.30) electrodes in 5 mol dm⁻³ KOH aqueous solutions are presented. The oxide layers have been prepared by thermal decomposition of aqueous nitrate solutions on nickel supports at 623 K. Powder samples were also prepared by thermal decomposition under the same conditions. The powder samples and the oxide layers were characterised by X-ray powder diffraction. The influence of the copper content on the voltammetric response of the electrodes and activity towards oxygen evolution reaction is analysed and correlated with the surface composition of the electrodes by means of X-ray photoelectron spectroscopy data. The analysis of the results reveals that the presence of Cu affects the electrode behaviour and its influence depends on which cation has been replaced. Received: 22 February 1999 / Accepted: 26 October 1999     

On the LPCVD-Formed SiO2 Etching Mechanism in CF4/Ar/O2 Inductively Coupled Plasmas: Effects of Gas Mixing Ratios and Gas Pressure

An investigation of etching mechanism of low-temperature SiO₂ thin films in CF₄/Ar/O₂ inductively coupled plasmas at constant input power (900 W) and bias power (200 W) was carried out. It was found that that the variations of Ar/O₂ mixing ratio (0–50 %) at constant 50 % CF₄ fraction as well as the change in gas pressure (4–10 mTorr) resulted in non-monotonic SiO₂ etching rates. The zero-dimensional plasma model with Langmuir probe diagnostics data provided the detailed information on formation-decay kinetics for plasma active species. The model-based analysis of etching kinetics showed that these effects were not connected with the non-monotonic change of fluorine atom density (as was found in several works for the binary CF₄/O₂ system), but resulted from the decrease in reaction probability and with the transition from neutral-flux to ion-flux-limited regimes of ion assisted chemical reaction.     

Electrodeposition of mesoporous V2O5 with enhanced lithium-ion intercalation property

Mesoporous vanadium oxide (V₂O₅) thin films were deposited electrochemically onto indium tin oxide-coated glass substrates from an aqueous solution of vanadyl sulfate using CTAB (hexadecyltrimethylammonium bromide) as a templating agent. For comparison, a control sample was electrodeposited without CTAB templating. Transmission electron microscopy and small angle X-ray diffraction indicated the presence of mesoporosity with a well-ordered lamellar phase in the electrodeposited films. The crystallinity of the V₂O₅ thin films was confirmed by X-ray diffraction. Cyclicvoltammetry and chronoamperometry were used to measure electrochemical properties of synthesized films. The mesoporous films prepared with CTAB templating had a much higher capacity and lithium-ion diffusion rate than the non-porous electrode prepared without CTAB templating.