Origin of the conductivity minimum and the negative magnetoresistance in n-type sulpho-spinels

Electrical conductivity and magnetoresistance in Ga-doped and undoped sulpho-spinels have been studied. The influence of annealing treatments on the electrical properties is discussed and results are given. It is shown, that the conductivity minimum and the negative magnetoresistance found in Ga-doped samples at temperatures near T_c, are due to impurity conductivity of the magnetic impurity state type.     

Conductivity of Ce<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Sr<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>MnO<Subscript>3</Subscript> manganites in a magnetic field within the temperature range 78–300 K

The electrical conductivity of the family of Ce _x Sr_1?x MnO₃ (x = 0.50, 0.67) alloys is studied in magnetic fields of up to 0.6 T in the temperature range 78–300 K. The semiconductor-metal phase transition is observed in unannealed samples with x = 0.5 and in both annealed and unannealed samples with x = 0.67. All samples exhibit giant negative magnetoresistance. The temperature dependence of the giant negative magnetoresistance effect, the dependence of the electrical resistivity on the magnetic field at 78 K, and the time dependence of the magnetoresistance at 78 K are measured for the first time. Some samples reveal the properties of spin glass and strong ferromagnets. The reproducibility of the data obtained for these samples depends on the prehistory of the samples, specifically on the conditions of annealing and exposure to a magnetic field.     

Connection between colossal magnetoresistance in La0.85Sr0.15MnO3 and magnetic ordering inhomogeneities of a sample

Resistive and magnetic measurements are made for La_0.85Sr_0.15MnO₃. The dependence of resistivity on the applied magnetic field (10, 20, 30, and 50 kOe) and temperature (200–310 K) is analyzed using the s-d model and the obtained experimental data. The physical features that should be contained in models proposed to explain the colossal magnetoresistance of manganites with activation-type conductivity are determined. It is shown that the proposed mechanism associating the colossal magnetoresistance effect with phase separation into ferromagnetic and paramagnetic microregions near the Curie temperature has the necessary features.     

Mechanisms of charge transfer and magnetoresistance in CuInSe<Subscript>2</Subscript>

The electrical conductivity and magnetoresistance effect of n and p types of CuInSe₂ single crystals were studied within the temperature range of 4.2–300 K and within magnetic fields of up to 6 T. It was found that the hopping mechanism of conductivity dominates in the temperature range of 4.2–100 K. A peculiarity of electrical conductivity behavior, accompanied by a change in the magnetoresistance sign in the vicinity of T ≈ 60 K, was revealed.     

La1-xCaxMnO3的巨磁电阻效应

通过测量La_2/3Ca_1/3MnO₃，La_0.6Ca_0.4MnO₃单相多晶样品的磁电阻、电阻与温度的依赖关系，发现在La_1-xCa_xMnO₃体系中随x的变化，其磁电阻峰和电阻峰都发生了位移．作者认为体系中Mn⁴⁺含量是受Ca含量调制的，正是Mn⁴⁺含量的变化，导致磁性 关键词：     

Pulsed magnetic field study of the spin gap in intermediate valence compound SmB6

In this work, we report the behavior of electrical resistivity of SmB₆ at temperatures between 2.2 and 70 K in pulsed magnetic fields up to 54 T. A strong negative magnetoresistance was detected with increasing magnetic field, when lowering the temperature in the range T<30 K. We show that the amplitude of negative magnetoresistance reaches its maximum dR/R~70% at B=54 T, in the vicinity of phase transition occurring in this strongly correlated electron system at T_C~5 K. The crossover from negative magnetoresistance to positive magnetoresistance found at intermediate temperatures at T>30 K is discussed within the framework of exciton-polaron model of local charge fluctuations in SmB₆ proposed by Kikoin and Mishchenko. It seems that these exciton-polaron in-gap states are influenced both by temperature and magnetic field.     

Influence of Se-deficiencies on the properties of In-doped CdCr2Se4 single crystals

Lattice constant, Curie temperature, and electrical conductivity of CdCr₂Se₄:In single crystals have been measured after heat treatments of the crystals in Se atmosphere and under streaming hydrogen. By these treatments, the concentration of the Se vacancies and of the charge carrier concentration is altered drastically. The lattice constant as well as the magnetic ordering temperature have been found not to be affected by these heat treatments.Since the Se vacancies act as doubly changed donors, the electrical conductivity is strongly dependent on the concentration of the Se vacancies. A resistivity anomaly and large magnetoresistance are observed only in crystals with considerable Se deficiency. From these results it is concluded that the magnetoresistance is caused by hopping conduction between donor sites partly emptied by compensating A-site vacancy acceptors. Large magnetoresistance is found in samples with considerable Se deficit because only in this case the conduction at lower temperatures is dominated by the impurity band.     

Electrical and magnetic properties of manganites La1 ? xAgxMnO3 (x = 0.05, 0.1, and 0.2) at 77 K < T < 300 K

The electrical conductivity, magnetization, and magnetoresistance of manganites La_{1 − x} Ag _x MnO₃ have been investigated in the temperature range 78–300 K. The samples have been synthesized by the sol-gel method. At room temperature, the magnetic field of 0.6 T has no effect on the electrical conductivity. As the temperature decreases, an abrupt jump is observed in the magnetization curve due to the semiconductor-metal phase transition. This transition hardly affects the temperature dependence of the resistance.     

Magnetoresistive effect in RCu<Subscript>3</Subscript>Mn<Subscript>4</Subscript>O<Subscript>12</Subscript> perovskite-like oxides

The electrical properties of and the magnetoresistive effect in RCu₃Mn₄O₁₂ (R=rare-earth ion or Th) are studied. In all compounds of this series, the magnetoresistive effect amounts to 20% at liquid nitrogen temperature in the presence of a field of 0.9 T. An increase in the magnetoresistance with decreasing temperature and a high sensitivity to weak magnetic fields at low temperatures point to the intergranular nature of the effect. The magnetoresistance shows a peak in the vicinity of the Curie temperature T_C. Based on the dependences of the magnetoresistance on an external magnetic field, it is assumed that the magnetoresistance peak near T_C is related to the charge carrier scattering by magnetic inhomogeneities as in substituted orthomanganites. We believe that the magnetoresistance value near the magnetic ordering temperature depends on the synthesis conditions and the effect of the intergranular spacer on the transport properties of these compounds.     

Electrical conductivity, magnetoresistance, and specific heat of oxygen-deficient La0.67Ca0.33MnO3−α(0≤α<0.4)

This paper reports on a first study of the effect of oxygen content in La_0.67Ca_0.33MnO_3?α on the electrical conductivity, magnetoresistance, and specific heat within a broad range of oxygen deficiency variation, 0≤α<0.4. Preparation of a large quantity of stable samples with an easily controllable oxygen deficiency was made possible by using a “soft” hydrogen treatment (870 K, 1–2 kPa). The properties of samples with 0≤α≤0.06 are shown to differ from those with α≥0.1. For instance, samples studied in the semiconducting phase at 300 K revealed, on the average, E _g=0.28 eV in the first group and E _g=0.43 eV in the second, and only samples of the first group exhibit giant negative magnetoresistance and specific-heat anomalies in the range 150–200 K. The latter anomalies correlate with magnetoresistance peaks observed in all samples of the first group (with α≤0.06). The metal-semiconductor transition was found to disappear abruptly for α>0.006. The effects of a variation in the cation composition and the oxygen content on the physical properties are compared.     

Field Confinement Energy at a Nonlinear Interface between Nonlinear Defocusing Media

The dependences of the resistance of the layered quasi-one-dimensional semiconductor TiS₃ on the direction and magnitude of the magnetic field B have been measured. The anisotropy and angular dependences of the magnetoresistance indicate the two-dimensional character of the conductivity at T < 100 K. Below T₀ ≈ 50 K, the magnetoresistance for the directions of the field in the plane of the layers (ab plane) increases sharply, whereas the transverse magnetoresistance (B ∥ c) becomes negative. The results confirm the possibility of an electron phase transition to a collective state at T₀. The negative magnetoresistance (at B ∥ c) below T₀ is explained by the magnetic-field-induced suppression of two-dimensional weak localization. The positive magnetoresistance (at B ∥ ab) is explained by the effect of the magnetic field on the spectrum of electronic states.     

Resonant magnetoresistance in the vicinity of a phase transition

The change in the electrical conductivity of manganite films upon microwave pumping in the magnetic resonance conditions is investigated. The temperature dependence of the effect correlates with the temperature variation of colossal magnetoresistance (CMR), passing through a maximum at the Curie point. The results are interpreted using a model that assumes a decrease in the absolute value |M| of the magnetic moment of the sample under the action of magnetoresonant saturation, which leads to an increase in resistance in accordance with the CMR mechanism. Theoretical analysis based on the Landau-Lifshitz-Bloch equation confirms the correctness of this model and ensures good agreement with experiment.     

Acoustic and magnetic properties of La<Subscript>0.825</Subscript>Sr<Subscript>0.175</Subscript>MnO<Subscript>3</Subscript> lanthanum manganites

This paper reports on measurements of the acoustic, magnetic, and electrical properties and on an x-ray microprobe analysis of a La_0.825Sr_0.175MnO₃ single-crystal sample. The acoustic studies were made with a pulsed acoustic spectrometer operating on a 770-MHz carrier. The studies revealed anomalies in the damping coefficients and sound velocity near 300, 200 K, and the Curie temperature T_C (283 K) where the colossal magnetoresistance occurs. The effect of a magnetic field on the magnetic texture of lanthanum manganites cooled below T_C, observed earlier in samples of other composition, is confirmed. In addition, a region was found wherein the magnetic susceptibility of an unclamped sample behaves anomalously. The electrical resistivity was observed to decrease substantially below T_C; this effect exhibits a hysteretic pattern in the interval 200–180 K.     

Two types of magnetoresistance in amorphous germanium

The magnetoresistance ot sputtered films of a-germanium has been measured in the temperature region 78–450 K in magnetic fields up to 25 kG. Two types of dependences of the magnetoresistance on the magnetic field and the temperature have been found. Differences between these two types are ascribed to the influence of deep impurity levels on the electrical conductivity in amorphous Ge.We are grateful to Mr. J.Zemek for preparation of the germanium samples.     

Lattice,electrical, and magnetic effects in lanthanum manganites La1−x Sr x MnO3 (x = 0.125, 0.150, 0.175)

The temperature dependences of the velocities of transverse and longitudinal hypersound in lanthanum strontium manganites of the composition La_1−x Sr _x MnO₃ (x = 0.125, 0.150, 0.175) have been measured at frequencies of 0.5–0.7 GHz. The structural phase transitions have been revealed, and their positions have been confirmed by data on the electrical resistance and magnetic measurements performed using the same samples. The results obtained have been analyzed in the framework of the model of competing Jahn-Teller distortions and magnetic ordering. The anomalies observed in the behavior of the velocities of longitudinal hypersound have been attributed to the local Jahn-Teller distortions, and their suppression due to the magnetic ordering has been considered a possible factor responsible for the colossal magnetoresistance.     

Magnetotransport effects in paramagnetic Gd x Mn1 − x S

The electrical resistance of Gd _x Mn_{1 ? x} S solid solutions with x = 0.1, 0.15, and 0.2 has been measured at magnetic field H = 0.8 T and at zero magnetic field within the 100 K < T < 550 K temperature range. The magnetoresistance peak is observed above room temperature. On heating, the composition with x = 0.2 exhibits the change of magnetoresistance sign from positive to negative and the magnetoresistance peak near the transition to the magnetically ordered state. The experimental data are interpreted in the framework of the model involving the orbital ordering of electrons and the arising electrical polarization leading to the changes in the spectral density of states for electrons in the vicinity of the chemical potential in the applied magnetic field.     

Spin-controlled negative magnetoresistance resulting from exchange interactions

We studied conductivity of AlGaAs–GaAs quantum well structures (where centers of the wells were doped by Be) at temperatures higher than 4 K in magnetic fields up 10 T. Throughout all the temperature region considered the conductivity demonstrated activated behavior. At moderate magnetic fields 0.1 T < H < 1 T, we observed negative isotropic magnetoresistance, which was linear in magnetic field while for magnetic field normal with respect to the plane of the wells the magnetoresistance was positive at H > 2T. To the best of our knowledge, it was the first observation of linear negative magnetoresistance, which would be isotropic with respect to the direction of magnetic field. While the isotropic character of magnetoresistance apparently evidences role of spins, the existing theoretical considerations concerning spin effects in conductance fail to explain our experimental results. We believe that such a behavior can be attributed to spin effects supported by exchange interactions between localized states.     

Transport properties of n-type ferromagnetic semiconductor HgCr2−xInxSe4(x = 0.100)

Measurements of the electrical conductivity, magnetoresistance, and Hall effect were performed on a n-type ferromagnetic semiconductor HgCr_2?xIn_xSe₄(x = 0.100) single crystal from 6.3 to 296 K in magnetic fields up to 1.19×l0⁶A/m. The conductivity decreases rapidly near the Curie temperatureT_c (≈120 K) as the temperature is raised. A large peak in the magnetoresistance is observed near T_c. The Hall effect measurements indicate that the temperature dependence of the conductivity and the magnetoresistance are due mostly to a change in electron mobility. The electron mobility is 1.2 × 10^?2 m²/V · s at 6.3 K, and decreases rapidly near T_c with the rise in temperature. Then it increases slowly from 5.5 × 10^?4 m²/V · s at 160 K to 7.5 × 10^?4 m²/V · s at 241 K. This temperature dependence of the electron mobility can be explained in terms of the spin-disorder scattering which takes into account the exchange interaction between charge carriers and localized magnetic moments.     

Large negative magnetoresistance in thiospinel CuCrZrS4

We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS₄. The electrical resistivity increased with decreasing temperature according to the exp(T₀/T)^1/2, an expression derived from variable range hopping with strong electron-electron interaction. The resistivity under a magnetic field was expressed by the same form with the characteristic temperature T₀ decreasing with increasing magnetic field. Magnetoresistance ratio ρ(T,0)/ρ(T,H) is 1.5 for H=90 kOe at 100 K and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. A possible mechanism of the large magnetoresistance is discussed.