单横模光子晶体微腔激光器的研究

对单横模激射的光子晶体垂直腔面发射激光器的设计具有指导作用。把单横模光子晶体光纤理论用于光子晶体微腔,分析有效归一化频率随晶格常数和填充比的变化关系;采用时域有限差分方法计算二维空气孔型三角结构光子晶体的完全带隙。利用上述计算结果,选取合适的光子晶体结构参数,实现单横模激射。从载流子数面密度和光子数面密度的速率方程出发,分析了光子晶体的引入对激光阈值的影响。     

二维光子晶体对面发射激光器横模控制研究

垂直腔面发射激光器的单模输出特性在光网络数据传输光互连、光存储和激光打印中有重要的应用.传统的氧化限制型垂直腔面发射半导体激光器由于串联电阻大、发热严重而很难工作在单模状态.二维光子晶体结构可以有效地控制垂直腔面发射激光器的横向模式,使器件工作在单模状态下.从理论上系统研究了光子晶体垂直腔面发射半导体激光器的单模条件,成功设计了一组单模光子晶体垂直腔面发射半导体激光器,并通过常规工艺制作出功率0.6 mW、边模抑制比大于30 dB、阈值电流4 mA、远场发散角8.4°、不受电流注入影响的单模光子晶体垂直腔面发射半导体激光器.实验证明:光子晶体可有效地进行横模控制.     

光子晶体垂直腔面发射激光器的研究进展

单模垂直腔面发射激光器(VCSEL)具有低功耗、小发散角、高调制带宽和易于二维集成等优点,在光互连、光存储、高速激光打印和长波通讯等方向有着很好的应用前景。调节VCSEL顶部和底部反射层的结构可以很容易地实现单纵模条件,然而要实现横向单模输出,就要同时对出射光加以横向限制。在VCSEL的顶部反射层刻蚀出二维光子晶体结构构成的光子晶体VCSEL实现了稳定的单横模激光输出。介绍了光子晶体VCSEL的基本结构、工作原理、研究进展和应用领域,并探讨了如何使光子晶体VCSEL获得更高的出光功率、控制激光偏振特性和减小发散角等问题。最后评述了光子晶体VCSEL的国内研究现状,并对未来的研究做了展望。     

质子注入型光子晶体垂直腔面发射激光器制备

在光子晶体垂直腔面发射激光器中采用质子注入工艺,使台面工艺变成纯平面工艺,降低了光子晶体结构制备难度,简化了器件制备,提高了器件的均匀性。质子注入型光子晶体垂直腔面发射激光器中的光子晶体结构,在电流限制孔小于光子晶体缺陷孔时,仍能控制器件光束及模式特性,该结果可用于优化器件阈值电流,制备高性能低阈值电流基横模器件。实验所设计制备的器件,在注入电流小于12.5 mA时,阈值电流2.1 mA,出光功率大于1 mW,远场发射角小于7,有效验证了光子晶体结构在质子注入型面发射激光器中的光束改善及模式控制作用。     

光子晶体垂直腔面发射激光器特性研究

本文介绍了光子晶体垂直腔面发射激光器的制备工艺、工作原理、基本特性和研究进展,重点评述了光子晶体垂直腔面发射激光器的优良特性及应用前景.我们认为光子晶体垂直腔面发射激光器是一种新型的半导体激光器,它具有大出光孔径、较高的出光功率、稳定的单模、多芯传输等特点,而且具有优良的热特性和高速调谐特性,可在二维光信息处理的GaAs基近红外波段激光器、面阵集成等方面具有很大的应用潜力.     

狄拉克光子晶体在面发射激光器中的应用

光子晶体由于具有可设计、可调谐以及对光的超 常调控等优异性能,近年已成为重 要的光学拓扑态研究平台。狄拉克(Dirac)锥型线性色散的奇异特性可实现丰富的物理现 象,诸如Dirac振荡、拓扑边缘态、零折射率等,更是凝聚态拓扑现象的物理根源。本文重 点对近年Dirac光子晶体在面发射激光器中的应用进行了详细介绍,指出将Dirac光子晶 体引入到半导体激光器中,可 实现大面积超低阈值、高亮度、单纵模和单横模的拓扑腔面发射激光器(topological cavity surface emitting lasers,TCSELs),同时对基于Dirac光子晶体原理发展出的TCSELs进行了总结与展望。     

光子晶体使面发射量子级联激光器成为可能

将光子晶体共振腔内置到量子级联激光器中，美国的研究人员已开发出一种小型的面发射激光器。这种激光器将在化学传感、光谱分析及成像中具有潜在的应用。美国新泽西州默里希尔的贝尔试验室和帕萨迪纳州的加利福尼亚工学院的科研小组共同研制的中红外激光器可作为研究光子晶体及微腔作用的样机系统。     

光子晶体垂直腔表面发射激光器及最佳化设计

单基模垂直腔表面发射激光器(VCSEL)在光网络数据传输、光互连、光存储和激光打印中有潜在的应用前景。光子晶体垂直腔表面发射激光器(PC-VCSEL)已成为备受关注的研究课题。介绍了PC-VCSEL的结构、最佳化设计及特性。     

氧化限制结构940 nm垂直腔面发射激光器

为研究氧化限制结构孔径对940 nm垂直腔面发射激光器（VCSEL）特性的影响,制备了不同氧化孔径的940 nm VCSEL,并进行了测试分析。通过PICS3D软件对不同量子阱势垒材料的增益进行仿真计算,选取具有较高有源区材料增益的InGaAs/AlGaAs作为量子阱,并开展了增益-腔模失配设计。在设计优化的基础上,制备了6种氧化孔径的940 nm VCSEL,对其光电输出特性进行测试。结果表明：氧化孔径为4μm的VCSEL,室温下斜率效率为0.93 W/A,最大功率转换效率为40.1%;氧化孔径为7μm的VCSEL,室温下最大输出功率为12.24 mW;氧化孔径为2μm的VCSEL,室温下最大基横模功率为2.67 mW。该器件在2 mA连续驱动电流下,在10～80℃的范围内均可实现边模抑制比大于45 dB的基横模输出。     

Micro-fluidic photonic crystal vertical cavity surface emitting laser

The first monolithic micro-fluidic photonic crystal vertical cavity surface emitting laser (VCSEL), wherein the horizontal and vertical micro-fluidic channels lie within the VCSEL, is reported. The micro-fluidic photonic crystal VCSEL is created with two principal steps after fabrication of the VCSEL. The first step is integrating the two-dimensional photonic crystal with the VCSEL structure. The photonic crystal creates singlemode operation, and acts as the vertical micro-channels. After creating the photonic crystal pattern in the VCSEL, the oxide layer is selectively wet etched to form the horizontal channel. Preliminary results obtained from the introduction of fluid into the micro-channels are presented.     

Coupled-defect photonic crystal vertical cavity surface emitting lasers

Photonic crystal patterns containing two defects were fabricated within a large gain area in vertical cavity surface emitting lasers. By designing effective refractive index changes in the region between the defects through cavity shifts caused by photonic crystals, it was possible to coherently couple laser light output from the defects. This enables a novel way to fabricate coherently coupled laser arrays.     

Single fundamental mode photonic crystal vertical cavity surface emitting laser with 9 GHz bandwidth

A record 9 GHz small signal modulation in a single fundamental mode photonic crystal vertical cavity surface emitting laser is demonstrated for the first time. The device is designed by incorporating etched photonic crystal holes in the top distributed Bragg reflector for optical confinement. Emission spectra measured during small signal modulation confirms single fundamental mode operation.     

Tunable doped-fibre vertical cavity surface emitting laser

A simple way to improve the output power of singlemode tunable VCSELs is demonstrated. It is based on a master oscillator power amplifier (MOPA)-like embodiment of a fibre-VCSEL. The reported device, operating at 1.55 μm, uses a single pump source to photoexcite both a semiconductor structure and a doped fibre without compromise in compactness. Initial results show continuous tunability over 11 nm and fibre-coupled output power of 3.1 mW. It is noted that this approach can be extended to any part of the spectrum for which rare-earth doped optical fibres are available.     

表面光栅垂直腔面发射激光器偏振特性研究

研究了表面光栅结构对垂直腔面发射激光器(VCSEL)的偏振控制作用。引入表面光栅后,对不同刻蚀深度下的偏振相关的镜面损耗进行了仿真,结果表明表面光栅刻蚀深度在44~130 nm范围内均可实现稳定偏振,具有较大的工艺容差。表面光栅VCSEL在基横模工作状态下偏振抑制比(Orthogonal Polarization Suppression Ratio, OPSR)超过20 dB,偏振光谱峰间偏振抑制比达到40 dB,且在多横模状态也实现了有效的偏振控制。为了进一步验证光栅对偏振控制的效果,制作了方向互相垂直的两种表面光栅,具有这两种方向光栅的VCSEL的OPSR均达20 dB以上。测试分析表明表面光栅是VCSEL实现稳定偏振的一种有效手段。     

Spin controlled optically pumped vertical cavity surface emitting laser

It is shown that the output polarisation of optically pumped vertical cavity surface emitting lasers (VCSELs) can be unambiguously controlled by the pump polarisation. The degree of the output polarisation is higher than that of the pump polarisation. It is concluded that the polarisation of VCSELs with spin polarised electrical pumping can be controlled even with low spin injection efficiencies.     

Passively modelocked vertical extended cavity surface emitting diode laser

Passive modelocking of a surface emitting diode laser is demonstrated using an extended cavity concept which permits the incorporation of a saturable Bragg reflector mirror into a device designed for large aperture operation as a high-power 980 nm InGaAs multiple quantum-well vertical cavity source.     

Blue-green optically pumped GaN-based vertical cavity surface emitting laser

Blue-green GaN-based vertical cavity surface emitting lasers (VCSELs) were fabricated with two dielectric Ta₂O₅/ SiO₂ distributed Bragg reflectors. Lasing action was observed at a wavelength of 498.8 nm at room temperature under optical pumping. Threshold energy density and emission linewidth were 189 mJ/cm² and 0.15 nm, respectively. The result demonstrates that blue-green VCSELs can be realised using III-nitride semiconductors.     

垂直腔表面发射激光器的研究

垂直腔表面发射激光器(VCSEL)是一种应用于光纤通信系统的低成本、高性能的特定波长光源,它具有测试简单、易耦舍以及易形成阵列等独特优势,已在光并行互连及高密度光存贮等领域得到大规模应用.文章介绍了VCSEL的结构和当前的制造工艺水平,阐述了各波段VCSEL的发展和应用现状,探讨了VCSEL在不同领域中的应用范围并指出了VCSEL的发展前景.