精细调谐电增益环腔光电振荡器

为了有效实现光电振荡器(OEO)输出频率精细调谐 ,提出了一种基于电增益环腔(EGRR)的OEO。利用放大器、 滤波器和移相器构成可调谐EGRR,通过改变EGRR内信号的相位等效实现 环腔长度的改变,得到不同 频率的射频(RF)信号,RF信号与OEO产生的自由振荡信号电注入锁定,输出信号 的频率由锁定EGRR输出频 率的OEO模式决定,相位噪声由OEO决定。在简单结构实验的条件下,有 效实现了OEO输出频率精细调谐。实验结果表明,当光纤长为2km、EGRR长为0.5m时,得到 了频率为11.3GHz、边模抑制比(SMSR)为 48dB、可调谐范围为239MHz、调谐最小步长 为100kHz和相位噪声为－99dBc/Hz@10kHz的RF信号。     

基于光纤环选频特性的双环结构光电振荡器

提出并验证了一种借助于光纤环的选频特性实现辅助滤波的光电振荡器,利用偏振分束器(PBS)和偏振合束器(PBC)构成的双环路结构抑制掉部分光电振荡器的边模,同时借助于光纤环的光学梳状频率特性,对振荡器环路中的光信号模式再次进行选择,既起到边模抑制的作用,又提高了光电振荡器谐振腔的Q值.仿真结果表明:采用光纤环辅助滤波有利于光电振荡器的边摸抑制和单模输出,在保证光电振荡器输出低相位噪声和高频谱纯度微波信号的情况下,边模抑制比超过160 dB,模式间隔达到370 MHz,降低了对电域带通滤波器的性能要求,是一种新的光电振荡器设计方案.     

K波段高稳光电振荡器

介绍了一种具有高稳定性、高谱纯度、低相位噪声的双环路光电振荡器(OEO)。理论上分析了光电振荡器的基本原理,采用光域双环路的方案有效地实现了边模抑制,通过检测输出信号频率的变化来控制光纤环路的长度,从而得到了高质量的20GHz微波信号,其频谱纯度高,线宽小于1Hz,相位噪声在10kHz时为-112dBc/Hz,而且在4h观测时间内,频率的稳定性小于10-10。     

基于光电混合反馈控制的光电振荡器稳频研究

光电振荡器具有输出信号相位噪声低、频率可调的优点,已成为军民应用领域的研究热点。然而,目前光电振荡器存在输出信号频率不稳定的核心问题,这限制了其在工程中的应用和推广。基于此,文章研究了光电振荡器频率漂移机理,提出了一种基于光电混合反馈控制的光电振荡器频率稳定方法,该方法在保证光电振荡器低相噪的情况下可同时实现光电振荡器特定振荡频率的稳定输出。实验测试得到光电振荡器的稳定度达到了5.6×10-12/天,这可以满足工程中对频率稳定的应用需求。     

光电振荡器的相位噪声特性

与传统的微波振荡器相比,光电振荡器利用光纤储能,能够产生低相位噪声的微波信号.论述了光电振荡器的特点、基本结构和工作原理,推导了相位噪声的表达式,对其特性进行了理论研究,并构建了光电振荡器的实验.理论分析表明,光纤延时、激光器的相对强度噪声以及微波放大器的噪声系数会影响光电振荡器的相位噪声,为减小相位噪声提供了理论依据.实验测量了3种光纤延时下的相位噪声,并与理论分析的结果进行了对比,证明了理论分析的正确性.     

基于电移相器的频率精细可调谐光电振荡器

光电振荡器(OEO)是当前热门的一个研究问题,频率可调谐是它的一个重要性能指标。目前,频率可调谐的步长比较大,较好的也只能达125 MHz左右,还处于粗调谐水平。通过实验验证了一种基于电移相器实现的可精细调谐的OEO。该方案通过调节电移相器的偏置电压,改变环腔中振荡频率的相位,等效于改变环腔时延,最终实现环腔振荡频率的改变。由于移相器的相移量可以通过偏置电压进行细微调整,所以可以实现环腔振荡频率的精细调谐。实验中使用最大相移量为180°的电移相器实现了10.020~10.025GHz约5.5 MHz范围内步长约为70kHz的精细可调谐。     

全环形镜面利用的多程环形腔特性分析

本文分析了全环形镜面利用的多程环形腔的运行特性和输出特性。     

基于激光外调制的频率可调谐光电振荡器

为了实现光电振荡器(OEO)输出频率的可调谐,提出了一种基于外调制激光的频率可调谐光电振荡器。此方案在单环OEO的基础上增加一个由微波滤波器、电衰减器、电放大器和电移相器构成的电增益选频腔,通过调节电移相器的偏置电压可以等效改变电选频腔的腔长,从而改变其输出微波信号的频率;同时调节光延时线来改变光电振荡器的起振模式,通过电增益选频腔信号与光电振荡器自由振荡信号的电注入锁定,即可实现频率可调谐的光电振荡器,其输出信号的频率由锁定OEO模式的电增益选频腔决定。实验结果表明,本方案产生了频率调谐范围为10.05 GHz~10.09 GHz、调谐步长为400 kHz的输出信号,频率在40 MHz的范围内连续可调谐。在输出频率为10.0519 GHz时,其边模抑制比为60 dB,相位噪声为-115 dBc/Hz @10 kHz。该方案结构简单,既保留了单环OEO低相位噪声的优势,又能有效抑制边模,为实现频率可调谐OEO提供了一种新的方法。     

基于光电振荡器的光脉冲和电微波信号发生器

设计了一种基于相位调制器的用于产生光脉冲和电微波信号的光电振荡器。该方案采用直调激光器配合相位调制器产生大啁啾并由DCF压窄输出光脉冲。利用偏振分束器和合束器在不增加有源器件的基础上形成双环路结构抑制微波信号的边模。该系统可以产生9.8 GHz的重复频率,脉宽小于 12 ps的光脉冲同时输出该频率的电微波信号。测得相位噪声为-105 dBc/Hz@10 kHz,Q值大于10¹⁰。     

Microwave performance of nonlinear optoelectronic microstrip ring resonator

Difference and sum frequency generation at frequencies from 0 to 14 GHz has been obtained by mixing of a microwave local oscillator and a modulated optical carrier in a microstrip ring resonator with Schottky contacts on a semi-insulating GaAs substrate.<>     

An optoelectronic oscillator based on dual-lasers

A novel optoelectronic oscillator （OEO） based on dual-lasers is demonstrated in this paper. The oscillator takes advantage of the dual optical fiber loops with different mode separations, which induces the gain competition and leads to high sidemode suppressed ratio （SMSR）. Besides, the OEO can also suppress the random interference and the beating noise when single laser source is used. Finally, the results are as follows： the operating frequency is 4.998 GHz, the phase noise is 113 dBc/Hz at 10 kHz, the SMSR is more than 60 dB, and the time jitter is 289 fs.     

Microwave voltage tuned microstrip ring resonator oscillator

A microwave oscillator incorporating a varactor-tuned microstrip ring resonator was developed using a single packaged varactor diode which together with other required components was mounted inside the ring structure. A tuning bandwidth of ~30% was achieved with forward and reverse biasing of the varactor diode. The measured phase noise of the new oscillator was found to be better than -90 dBc kHz from the carrier     

Cryogenic opened cavity sapphire resonator for ultra-stable oscillator

A new high-Q sapphire whispering gallery mode resonator is proposed to achieve ultra-high frequency stability. It is proposed to use the sapphire resonator without metallic walls to suppress spurious modes perturbating the main resonance. Providing the azimuthal order of the chosen whispering gallery mode is sufficiently high, Q-factors better than 2/spl times/10/sup 8/ have been observed, which turn out to be sufficient to reach a high frequency stability. A first oscillator prototype operating at 12 GHz shows a relative frequency instability of 3/spl times/10/sup -14/.     

Design and simulation of optoelectronic oscillator with micro ring resonator and radio frequency amplifier modelling at 110 GHz

There is an increasing need for high performance oscillators as the faster transmission networks demand for high frequency signals. Opto-electronic oscillators (OEO) enable us to make better oscillators in terms of size, weight and power. In this paper, photonic integration is proposed for realizing the OEO with micro ring resonator (MRR) and radio-frequency (RF) amplifiers of monolithic microwave integrated circuit (MMIC), which can be used for generating 110 GHz sine wave. The OEO architecture is proposed and block diagram developed considering Silicon based MRR and three-stage RF amplifier based on GaN high-electron-mobility transistor (HEMT). A simulation model is developed according to the Klein model of MRR and is validated against the calculated performance parameters. MRR dimensions are calculated as with silicon on insulator (SOI) technology and a radius 5.27 μm for the device is derived. Free spectral range (FSR) of 48.52 nm and filter rejection ratio of 16.79 dB are obtained for this device. The proposed RF amplifier is modelled with GaN parameters derived from high frequency pinch-off model and with power amplifier considerations. The gain for this amplifier is obtained as 10.6 dB. The OEO design is developed in this project in such a way that the system can be manufactured with the existing methods.     

基于双环形谐振腔结构的二维光子晶体波分复用器

为了实现光波的波分复用功能并且提高光波的辐射效率,设计了一种基于双环形谐振腔结构的二维光子晶体波分复用器.首先,对光子晶体结构参数进行设计,通过谐振腔和微腔耦合选择不同频率的光波,设计光子晶体滤波器模型;然后,根据模式耦合理论确定主干波导与谐振腔之间的最佳耦合条件,设计波分复用器;最后,加入散射介质柱并调整两谐振腔之间...     

Novel type of fibre-optic ring resonator

A fibre-optic ring resonator with highly wavelength-selective input reflection coefficient was realised by introducing a small local reflection in the ring. The influence of the local reflectivity on the input reflection coefficient is demonstrated. Maximum values for the input reflectivity and finesse are 55% and 10, respectively, using a fibre directional coupler (FDC) with a coupling ratio of 30%/70%.     

A ring oscillator based on HIFETs

A hygroscopic insulator field-effect transistor (HIFET) ring oscillator with three inverters was built and tested under ambient laboratory conditions. An operating voltage of −2 V was used, yielding a peak-to-peak output voltage of 1.1 V and an oscillation frequency of 28 mHz. For Spice (simulation program with integrated circuit emphasis) simulation of the HIFET circuits the measured HIFET output characteristics were fitted to a DC (direct current) model and additional measurements were made to find the magnitude of the capacitive and resistive elements in the HIFET gate structure. The results indicated that HIFETs have a good potential for use in amplifier and sensor circuit applications where high operation speed is not crucial.