浸没式光刻照明系统的照明模式变换器

研究了NA1.35浸没式光刻照明系统中照明模式变换模块的设计和测试。采用衍射光学元件实现包括传统照明、二极照明、四极照明的照明模式变换系统的设计和分析。给出了不同照明模式的衍射光学元件的设计结果,并对设计结果进行了模拟分析和实验分析,证明了设计的可行性。研究结果表明:当输入光场被分割的阵列数为2020单元时,二极和四极照明模式下衍射元件台阶数为32,传统照明模式下台阶数为128的情况下,衍射光学元件作为照明模式变换器的均匀性及衍射效率都能够满足设计要求。从原理、实验上验证衍射光学元件激光模式变换器设计的正确性及可行性。研究结果能够应用于浸没式光刻照明系统中照明模式变换结构中,具有一定的理论价值和工程意义。     

浸没式光刻技术的研究进展

浸没式光刻技术是将某种液体充满投影物镜最后一个透镜的下表面与硅片之间来增加系统的数值孔径,可以将193nm光刻延伸到45nm节点以下。阐述了浸没式光刻技术的原理,讨论了液体浸没带来的问题,最后介绍了浸没式光刻机的研发进展。     

浸没式光刻技术

综合叙述了浸没式光刻技术的基本工作原理和相对于157nm干式光刻技术的优势,简要介绍了当前的研发动态并对其具体实现的问题进行探讨。     

离轴照明对ArF浸没式光刻的影响

研究了离轴照明对65nm分辨率ArF漫没式光刻的影响。在3／4环形照明和3／4四极照明方式下,研究65nm线宽的密集线条、半密集线奈、孤立线条在较大曝光系统参数范围内的光刻性能,并对不同照明方式的光刻性能进行了比较。结果表明,在可用焦深(depth of foeus,DOF)范围内,满足光刻性能要求可以有较大范围的曝光系统参数配置。离轴照明的焦深比传统照明提高100％～150％,采用四极照明对孤立线条进行曝光,可以获得更好的光刻性能。     

分辨力增强技术在65 nm浸没式ArF光刻中的应用

首次利用自主研发的光刻辅助设计软件MicroCruiser结合Prolith8.0.2,研究了分辨力增强技术在65nm浸没式ArF光刻中的应用,研究表明,相移掩模结合传统照明可以获得较大的工艺窗口,但是,引起的曝光图形偏移较大。而传统掩模结合离轴照明可以获得较大的工艺窗口,但是,引起的曝光图形偏移较小。因而,通过对单个像差的控制和进行的不同Zernike系数组合,可以大大减少曝光图形的偏移。     

193nm浸没式光刻技术发展现状及今后难点

2002年之后,浸没式技术迅速成为光刻技术中的新宠.因为此种技术的原理清晰及配合现有的光刻技术变动不大,获得了人们的极大赞赏.     

浸没式ArF光刻最新进展

简单概述了浸没式ArF的发展历史、特点和面临的科学技术问题,在跟踪报道国内外最新研究进展的同时,介绍前沿光刻技术的研发特点和研究手段,强调协同设计研究的重要地位,并揭示浸没式ArF光刻不是干式ArF光刻的简单移置和延续。     

193 nm ArF浸没式光刻技术PK EUV光刻技术

2006年11月英特尔决定采用193nm ArF浸没式光刻技术研发32nm工艺。2007年2月IBM决定在22nm节点上抛弃EUV光刻技术,采用193nm ArF浸没式光刻技术。对于32nm/22nm工艺,193nm ArF浸没式光刻技术优于EUV光刻技术,并将成为主流光刻技术。     

浸没式光刻向22nm挺进

简述了光学光刻技术在双重图形曝光、高折射率透镜材料及浸没介质、32nm光刻现状及22nm浸没式光刻技术的进展,指出了光学光刻技术的发展趋势及进入22nm技术节点的前景。     

浸没式光刻系统中光束传输系统的设计

为实现浸没式光刻照明系统掩模面上高均匀照明性和不同照明模式,对照明系统中的光束传输系统进行了研究。浸没式光刻照明系统中的激光光束传输系统是光刻机中的重要组成部分,直接影响光刻机性能。针对浸没式光刻照明系统特点,提出了采用球面镜和柱面镜组合的光学结构,进行了激光准直扩束系统的光学设计与仿真分析。此外,对设计的准直扩束系统进行了公差分析,以保证在加工和装调完成后光束的发散角和口径均满足设计要求。最后,在系统完成的基础上对不同位置处的光斑尺寸进行测量。设计结果表明,系统能够满足光束在5~20 m传输光路范围内,不需要进行透镜间隔的调节,实现光斑大小和发散角满足设计要求,保证目标光束口径在(28.5±0.5)mm范围内,X方向发散角为1.2 mrad,Y方向发散角为1.84 mrad。通过分析发现,设计结果能够很好地满足指标的精度要求,具有重要的应用价值和实用意义。     

光刻照明系统中复眼透镜的设计及公差分析

在超大规模集成电路中,为了实现NA=1.35,波长193 nm处分辨率达到45 nm的目标,需要对影响光刻照明均匀性的误差源进行详细分析最终确定公差范围。复眼透镜是使光束在系统掩膜面上形成矩形均匀照明区域的关键元件。采用CODE V软件设计了复眼透镜对引起照明不均匀性的因素进行分析,结合复眼透镜组的设计方案和实际加工能力,给出X和Y向复眼曲率公差为±10%,后组曲率公差为±5%,前后组间隔公差为±50 μm,位置精度偏心公差为±1 μm,装配精度公差为±3 μm。制定公差合理、可行,满足了浸没式光刻照明系统高均匀性、高能量利用率的要求。     

光刻照明系统中新型均匀性补偿器的设计

在超大规模集成电路中,为了满足波长193 nm数值孔径为1.35的45 nm节点紫外光刻曝光光学系统对高分辨率的要求,设计了一种新型的均匀性补偿器件,用于提高照明系统的出射光均匀性从而实现光刻线条的高度均一性。该照明均匀性补偿器的主要功能是实现对照明视场的能量分布进行微调,从而减小系统的残余不均匀性,保证系统在掩膜面及硅片面上的能量分布均匀性达到更高指标的要求。此外,使用CODE V软件对该照明系统的均匀性进行仿真分析,研究发现采用新型均匀性补偿器可以在传统照明和离轴照明模式下同时的光刻照明系统对掩膜面的非均匀性均低于0.5%。与传统匀光单元相比,该新型均匀性补偿器在不增加光刻照明系统机械设计和控制难度的基础上可明显提高光刻照明系统的均匀性,故该器件具有更好的应用价值和实用意义。     

智能照明控制系统在地铁中的应用

文章讨论了目前地铁中常用的几种智能照明控制系统应用方案,介绍了不同智能照明控制系统的概念,比较了不同控制方案的特点,讨论了各种控制方案的适用范围,并以此为基础提出了工程建议。     

Leaching mechanisms in immersion lithography with or without top coat

The main difference between dry and immersion lithography lies in the interactions between the immersion medium and photoresist. For example, it has been shown that resists components as PAG or base additive can leach into water. Such leaching could degrade the resist performances and the optical elements such as scanner lens. Moreover, it could be involved in new defectivity mechanisms as watermark formation. That’s why immersion dedicated resists with low leaching rate or top coat protective layers have been designed for immersion lithography. However, they do not permit to prevent all leaching and there is always some residual amount of PAG extracted through the barrier layer. Even if leaching phenomena is now well understood for conventional resists, some questions are still present concerning PAG leaching through top coats. In this paper, we present a study of PAG leaching mechanisms through top coats. It is based on leaching kinetics analysis by HPLC/MS. As described in the literature, PAG leaching from dry resists into a static water volume has been shown to follow a first order kinetics model, however, in the case of a top coat stack, we observed a very different behaviour. A new model, taking into account both resist and top coat surface leaching has been developed to fit the experimental data. It illustrates the presence of two leaching mechanisms: a fast one from the top coat surface and a slow one from an embedded interface. This model also provides interesting data about the leaching process on immersion dedicated resists.     

Application of UV depth lithography in micro system technology

This letter reports on new types of photo resists allowing UV-light exposure of thick layers. Optimized processes Cthat for the positive resist AZ 9260 and the negative resist Epon SU-8 have been developed enabling the fabrication of high aspect ratio metallic and polymer micro components. The high potential of this technology will be demonstrated on the basis of two examples, a variable reluctance micro motor with compensated attractive force and an optical microphone developed for application in electro-magnetic interference environments.     

CPLD在智能感应照明控制系统中的应用

针对传统LED照明开关控制模糊等缺陷,设计了CPLD智能照明控制系统。首先介绍采用CPLD进行智能感应照明控制系统的工作原理,分析软硬件设计思路以及遇到的问题。实验表明,智能控制系统改善了传统控制开关的缺陷,能够可靠工作,实现照明的智能控制。     

Investigation on the critical velocity for liquid loss in immersion lithography

Immersion lithography seeks to extend the resolution of optical lithography by filling the gap between the final optical element and the wafer with a liquid characterized by a high index of refraction. The semiconductor industry demands high throughput, leading to relatively large wafer scanning velocities and accelerations. For higher scanning velocities, an issue that has been identified is the deposition of the immersion liquid while confining a relatively small amount of liquid to the under-lens region. Liquid loss occurs at the receding contact line that forms when a substrate is withdrawn from a liquid, which potentially leads to defects on printed patterns. There has been substantial prior work relative to understanding and building semi-empirical correlations and numerical models to investigate this behavior of the receding three-phase contact line. In the current work, a new liquid injection and collection model with analytic solutions is presented and compared with experimental results, in which the critical velocity for liquid loss is mainly a function of the vacuum degree, the injection flow rate, the properties of the immersion liquid. This correlation allows the critical velocity to be predicted with a given gap height between wafer and lens using only a measurement of the injection speed and knowledge of the fluid properties. Experimentally, glycerin–water mixtures of varying viscosities and different injection flow rates were tested, with variable outlet vacuum degree and inlet speed, showing a mean average error within 12%. This correlation represents a useful tool that can serve to approximately guide the development of fluid control for immersion systems as well as to evaluate alternative immersion fluid candidates to minimize liquid deposition while maximizing throughput.