基于Ge-As-Se硫系玻璃的高灵敏度光纤光栅温度传感器

采用真空熔融淬冷法制备了Ge₃₃As₁₂ Se₅₅和Ge₂₂As₂₀Se₅₈硫系玻璃,测试结果表明该玻璃在中红外 波段具有宽红外透过范围、高折射率和高折射率温度系数。以此材料为基质,设计了在中红 外波段的硫系 光纤光栅温度传感器。采用传输矩阵法和耦合模方程模拟计算了光纤光栅透射谱和温度传感 特性。研究发 现,设计的光纤光栅温度传感器的中心波长漂移量与温度变化有良好的线性关系。当工作波 长从近红外增 加到中红外波段后,光纤光栅的温度传感灵敏度可以得到极大的提升。计算结果表明,Ge- As-Se硫系布拉 格光纤光栅和长周期光纤光栅在1.55μm的温 度传感灵敏度分别达到了0.123nm/℃ 和0.292nm/℃,是石英基质光纤光栅在该波段的10和 24倍。     

硫系玻璃红外光纤的特性和应用研究

本文综述了硫系玻璃红外光纤的材料特性和应用研究,并展望了该材料的发展前景。     

硫系玻璃Ge28Sb12Se60薄膜光学非线性增强色散特性

采用真空热蒸发以及退火工艺制备了支持局域表面等离激元的微纳结构薄膜,在此薄膜上蒸镀了硫系玻璃Ge₂₈Sb₁₂Se₆₀薄膜。应用Z-扫描技术,在飞秒激光脉冲激发下研究其光学非线性增强的色散特性,在650 nm和850 nm波段观察到了非线性吸收增强;非线性折射率随着波长的增加由负变正。通过扫描电子显微镜和透过光谱表征和分析了硫系玻璃Ge₂₈Sb₁₂Se₆₀薄膜非线性吸收增强的原理,非线性吸收随着波长的增加由单光子吸收为主逐渐转变为双光子吸收为主;银膜的微纳结构导致硫系玻璃薄膜的共振中心频率发生了偏移。实验制备的用于增强硫系玻璃非线性的微纳结构制作简单,无需复杂光刻工艺,为非线性光子学器件的设计提供了新的思路。     

用非线性光纤连接的长周期光栅对的光开关特性

提出用一根掺铒光纤连接两个对称的长周期光纤光栅(EDF-LPFG)对构成的新型全光开关.数值模拟了在交叉相位调制下对应于不同抽运功率的信号光的透射谱;还研究了在不同光栅的有效折射率调制幅度和光纤吸收系数下,信号光透射率随抽运光功率的变化.导出了器件的阈值开关功率公式.EDF-LPFG对光开关的阈值开关功率比单LPFG光开关的开关功率降低了5个数量级,不到25 mW.     

基于As40Se60硫系玻璃的长波红外增透膜研制

As₄₀Se₆₀硫系玻璃基底沉积红外光学薄膜存在牢固性不足的缺点,以膜层牢固性为研究对象来解决膜层附着力问题。首先选择了合适的膜层材料,完成了膜系的设计及优化;然后以沉积温度为影响因素进行单因素实验,研究了ZnS连接层的镀制工艺和残余应力,采用无离子源辅助的办法降低了连接层的残余应力,提高了膜层附着力;最终解决了较高温度下的薄膜脱膜问题,研制了一种透过波段为8～12μm的红外增透膜,并确定了镀制工艺运用于实际生产。所制备的薄膜平均透过率为98%、平均反射率为0.6%,附着力、高低温、湿热实验满足GJB2845—1995标准中的要求。     

表面增强硫系玻璃Ge28Sb12Se60薄膜非线性吸收（特邀）

文中利用热蒸发以及退火等工艺制备了支持局域表面等离子体激元（LSP）的微纳结构,来增强硫系玻璃Ge₂₈Sb₁₂Se₆₀ (GSS)薄膜的非线性吸收效应;搭建了Z-scan光路,实现了对样品非线性折射与吸收的测量;通过对样品透射光谱的分析,揭示了GSS非线性吸收增强效应的原理。并研究了该微纳结构对不同厚度GSS非线性吸收的增强规律。文中用到的LSP微纳结构制作简单,无需复杂光刻工艺,可为增强材料光学非线性研究提供重要参考。     

用于红外激光传输的硫系玻璃光纤研究进展

随着红外光学的不断发展,国防安全、生物医疗、先进制造等领域对红外激光传输的需求越来越迫切,基于非氧化物玻璃的红外传能光纤日益受到重视。硫系玻璃作为一种优秀的红外材料,具有透过范围广、物化性能稳定、易于成纤等特点,是制备红外传能光纤的理想材料之一。介绍了国内外有关红外激光传输用硫系光纤(包括阶跃型光纤和微结构光纤)的最新研究进展,分析了目前存在的问题,指出了下一步的发展方向。     

硫系玻璃超快光子晶体光开关特性研究

利用熔融淬冷法制备了GeSbSe硫系玻璃,并用Z 扫描法测试了其三阶非线性特性。以制备的硫系玻璃作为基质材料设计了通信波段的光子晶 体光开关器件,采用平面波展开法优化了光子晶体结构的带隙,利用时域有限差分(FDTD)法 分析了所设计的光子晶体光开关结 构的传输特性,通过调整晶格常数与点缺陷的半径,获得了在超短激光脉冲诱导下的硫系玻 璃超快光子晶 体光开关。数值计算表明,对于1550 nm通 信波段,通过调节泵浦光强并使微腔处折射率改变,可以 实现对光波的导通与截止。分析结果显示,本文光开关的 阈值功率密度为7.7×10⁹W/cm²,开关消光比为25.48dB,品质因子达到10⁴。     

高强度硫系玻璃微结构光纤研究

针对硫系玻璃微结构光纤缺少有效制备方法的问题 ,本文选用可塑性较好的Ge₂₀Sb₁₅Se₆₅硫系玻璃,利用自制的硫系玻璃挤压机制备了多孔硫系玻 璃微结构光纤(CGMOF)。利用红外热像仪以及傅里叶红外光谱仪测试了挤压前后玻璃的红外 透过性能、根据不同厚度玻璃片的透过谱,计算了挤压后玻璃的光学损耗特性。利用扫描电 子显微镜观察拉制光纤的横截面,测试了光纤的直径。分析结果表明,挤压后的硫系玻璃的 红外透过 率和损耗较挤压前没有显著的变化。挤压前后的硫系玻璃在10μm处的光学损耗分别为0.25dB/cm和0.27dB/cm。利用与硫系玻璃具有相近软化点的塑料(PES)聚合物作 为 光纤的保护层,光纤的抗拉强度是标准石英光纤的1.45倍,显著提高了CGMOF的强度。     

As2Se3硫系玻璃非球面镜片的精密模压成型

硫系玻璃镜片是新型温度自适应红外光学系统的重要组件之一。随着红外热成像民用市场的日益成熟,对硫系玻璃镜片的产业化技术需求越来越迫切。文中进行了As2Se3硫系玻璃非球面镜片的精密模压实验,研究并优化出口径21 mm硫系镜片的模压工艺参数。通过模具的补偿修正,获得了完全满足镜片设计要求（PV值小于0.7 m）的模压镜片。此外,研究了模压处理对As2Se3玻璃物理性质的影响,发现模压后As2Se3玻璃的密度、硬度和玻璃转变温度Tg降低,最大透过率提高。通过拉曼光谱测试,分析并讨论了造成这种反常现象的微观结构原因。为今后较大口径非球面硫系镜片的批量制造提供了科学数据和参考。     

Fabrication of low-loss IR-transmitting Ge30As10Se30Te30 glass fibers

Improved purification and processing techniques have been utilized to fabricate Ge₃₀As₁₀Se₃₀Te₃₀ glass fibers with a minimum loss of O.11 dB/m at 6.6 μm. This is the lowest loss reported for any telluride glass fiber in the infrared region. Furthermore, the fibers exhibit less than 1 dB/m loss between 5.25 and 9.5 μm     

Amorphous-fcc transition in Ge2Sb2Te5

In this paper we discuss some major aspects on the physics of the phase transition from the amorphous to the face-centered-cubic (fcc) polycrystal in Ge₂Sb₂Te₅ at low temperature. We follow the phase transformation by using structural techniques such as TEM, XRD, and electrical resistivity measurements by using the 4-point-probe technique. The results are interpreted in the framework of a quantitative model.     

Patterning of Ge2Sb2Te5 phase change material using UV nano-imprint lithography

DRAM is the most commonly used memory due to many advantages such as high speed and easy manufacturability owing to its simple structure, but is volatile. On the other hand, flash memory is non-volatile, but has other disadvantages such as slow speed, short lifetime, and low endurance for repetitive data writing. Compared to DRAM and flash memory, PRAM (Phase-change Random Access Memory), which is a non-volatile memory using a reversible phase change between amorphous and crystalline state, has many advantages such as high speed, high sensing margin, low operating voltage, and is being pursed as a next generation memory. Being able to pattern and etch phase change memory in nanometer scale is essential for the integration of PRAM. This study uses the Nano-Imprint Lithography (NIL) for patterning the PRAM in nanometer scale which is believed to be a future lithography technology that will replace the conventional Photo Lithography. Si wafers coated with SiO₂ were used as substrates, and Ge₂Sb₂Te₅ (GST) films with the thicknesses of 100 nm were deposited by RF sputtering. Poly-benzylmethacrylate based polymer patterns were formed using NIL on the surface of GST films, and the GST films were etched using Cl₂/Ar plasma in an Oxford ICP (inductively coupled plasma) etcher.     

Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material

Phase-change nonvolatile memory cell elements composed of Sb₂Te₃ chalcogenide have been fabricated by using the focused ion beam method. The contact size between the Sb₂Te₃ phase change film and electrode film in the cell element is 2826 nm² (diameter: 60 nm). The thickness of the Sb₂Te₃ chalcogenide film is 40 nm. The threshold switching current of about 0.1 mA was obtained. A RESET pulse width as short as 5 ns and the SET pulse width as short as 22 ns for Sb₂Te₃ chalcogenide can be obtained. At least 1000 cycle times with a RESET/SET resistance ratio >30 times is achieved for Sb₂Te₃ chalcogenide C-RAM cell element.     

软抛光垫条件下非晶态Ge2Sb2Te5的化学机械抛光

Chemical mechanical planarization（CMP） of amorphous Ge₂Sb₂Te₅（a-GST） is investigated using two typical soft pads（politex REG and AT） in acidic slurry.After CMP,it is found that the removal rate（RR） of a-GST increases with an increase of runs number for both pads.However,it achieves the higher RR and better surface quality of a-GST for an AT pad.The in-situ sheet resistance（R_s） measure shows the higher R_s of a-GST polishing can be gained after CMP using both pads and the high R_s is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads,the surface morphology and characteristics of both new and used pads are analyzed,it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad,and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST,which results in the high RR of a-GST due to enhanced chemical reaction.     

溅射参数为Ge2Sb2Te5薄膜光学常数的影响

研究了溅射参数对Ge2Sb2Te5薄膜的光学常数随波长变化关系的影响。结果表明：（1）当浅射功率一定时,随溅射氩气气压的增加Ge2Sb2Te5薄膜的折射率先增大后减小,而消光系数先减小后增大。（2）当溅射氩气压一定时,对于非晶态薄膜样品,在500nm波长以下,折射率随溅射功率的增加先增加后减小,消光系数则逐渐减小;在500nm以上,折射率随溅射功率的增加逐渐减少,消光系数先减小后增加。 对于晶态薄膜样品,在整个波长范围折射率随溅射功率的增加先减小后增加,消光系数则逐渐减少。（3）薄膜样品的光学常数都随波长的变化而变化,在长波长范围变化较大,短波长范围变化较小,探讨了影响Ge2Sb2Te5薄膜光学常数的机理。     

Reactive-ion etching of Ge2Sb2Te5 in CF4/Ar plasma for non-volatile phase-change memories

Etching of Ge₂Sb₂Te₅ (GST) is a critical step in the fabrication of chalcogenide random access memories. In this paper, the etch characteristics of GST films were studied with a CF₄/Ar gas mixture using a reactive-ion etching system. We observed a monotonic decrease in etch rate with decreasing CF₄ concentration indicating its importance in defining the material removal rate. Argon, on the other hand, plays an important role in defining the smoothness of the etched surface and sidewall edge acuity. We have studied the importance of gas mixture and RF power on the quality of the etched film. The smoothest surfaces and most vertical sidewalls were achieved using a CF₄/Ar gas mixture ratio of 10/40, a background pressure of 80 mTorr, and power of 200 W.