Low frequency dielectric relaxation in lightly doped VO2 single crystals

The relative effects of intrinsic and extrinsic defects on the dielectric relaxation of VO₂ crystals have been investigated by measurement of the dielectric parameters of undoped crystals and crystals doped with Ti, Cr and Al. Measurements have been made in the temperature range 77–250 K and the frequency range 50–100 kHz. The dielectric data is described by a Cole-Cole distribution function with a distribution parameter α ? 0.45 which decreases with increasing temperature. However, the distribution of activation energies g(E) derived from α is almost independent of temperature. The overall dielectric relaxation behaviour is determined primarily by the intrinsic defect structure of VO₂, and the effect of impurities is observed only in changes in the low frequency limiting (static) value of the dielectric constant. The same transport mechanism is found to determine the dc conductivity and the dielectric relaxation and evidence is presented that the dielectric relaxation is of dipolar origin.     

Dielectric relaxation and magnetic characteristics of the Bi0.5La0.5MnO3 ceramics

The complex permittivity ?* of ceramics of bismuth-lanthanum manganite Bi_0.5La_0.5MnO₃ has been measured in ranges of temperatures T = 10–200 K and frequencies f = 10²–10⁶ Hz. Clearly pronounced regions of the non-Debye dielectric relaxation have been revealed at low temperatures (T < 90 K). To describe them, the possible mechanisms have been proposed and discussed. The temperature dependences of magnetization, the anomalous behavior of which can be associated with the phase transition from the paramagnetic phase into the ferromagnetic phase occurring at T ～ 40–80 K, have been measured in the temperature range T = 10–120 K.     

Dielectric relaxation in vanadium phosphate glasses

An asymmetric distribution of relaxation times has been inferred from an increase in the Cole-Cole distribution parameter α with increasing values of ωτ in 62% v₂O₅–38% P₂O₂ glass. The conventional Debye type relaxation loss peaks in the frequency range 10²–10⁵ Hz are observed in this sample above 85°K. The extrapolated values of dielectric constant and relaxation time below 100°K seem unexpectedly large while the high temperature extrapolated values of ?' are close to ?_∞ as expected. Probably the conventional dielectric loss peaks are observed only above a critical temperature at which the carriers gain sufficient energy to be excited to the conduction band edge. Below this temperature hopping of carriers within kT of the Fermi level may dominate and conventional Debye type dielectric loss peaks may lose their significance as envisaged in the models of frequency dependent ac conductivity.     

巨介电常数氧化物CaCu3Ti4O12的介电和阻抗特性

采用固相烧结法合成了单相巨介电常数氧化物CaCu₃Ti₄O₁₂（CCTO）.用阻抗分析仪分析了10—420 K温度范围内的介电频谱和阻抗谱特性,并结合ZVIEW软件进行了模拟.结果表明：温度高于室温时,频谱出现两个明显的弛豫台阶,低频弛豫介电常数随温度升高而显著增大,表现出热离子极化特点;温度低于室温时,频谱表现出类德拜弛豫,且高、低平台介电常数值基本不随温度变化,表现出界面极化特点和较好的温度稳定性.频谱中依次出现的介电弛豫对应于阻抗谱中 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 介电频谱 阻抗谱 Cole-Cole半圆弧     

The Effect of Supercritical CO2 on the Macromolecules Parallel Conformation and Its Relation to the Electrical Conductivity and Dielectric Behavior of Epichlorohydrin Terpolymer

The effect of supercritical CO₂ on the electrical conductivity of poly(epichlorohydrin–Ethylene oxide–Allyl glycidal ether) terpolymer is investigated using dielectric spectroscopy. Impedance measurements were carried out in the frequency range from 100–10 MHz and the temperature range of ?35–70°C with intervals of 5°C. The experimental results of the dielectric constant and the dielectric loss were fitted with the Cole–Cole equation to obtain the maximum relaxation frequencies of the different relaxation processes. As a result of the CO₂ treatment process, enhancement in the polymer chain mobility without noteworthy change in the glass transition temperature was determined. In addition, the level of the DC conductivity and the dielectric strength were increased. These effects were attributed to improvement in the chain dynamics, which arises from enhancement in the parallel conformation of macromolecules.     

Dielectric relaxation and dc conductivity on the PVOH-CF3COONH4 polymer system

In the present paper, the ionic conductivity and the dielectric relaxation properties on the poly(vinyl alcohol)-CF₃COONH₄ polymer system have been investigated by means of impedance spectroscopy measurements over wide ranges of frequencies and temperatures. The electrolyte samples were prepared by solution casting technique. The temperature dependence of the sample’s conductivity was modeled by Arrhenius and Vogel-Tammann-Fulcher (VTF) equations. The highest conductivity of the electrolyte of 3.41×10^− 3 (Ωcm)^− 1 was obtained at 423 K. For these polymer system two relaxation processes are revealed in the frequency range and temperature interval of the measurements. One is the glass transition relaxation (α-relaxation) of the amorphous region at about 353 K and the other is the relaxation associated with the crystalline region at about 423 K. Dielectric relaxation has been studied using the complex electric modulus formalism. It has been observed that the conductivity relaxation in this polymer system is highly non-exponential. From the electric modulus formalism, it is concluded that the electrical relaxation mechanism is independent of temperature for the two relaxation processes, but is dependent on composition.     

Time relaxation of dielectric constant in the commensurate phase of TlGaSe2

The results of measurements of the time dependences of the dielectric constant of TlGaSe₂ in the commensurate ferroelectric phase are presented. From the result of the observation of the decay of ε at different stabilized temperatures below the commensurate phase transition temperature after cooling from the incommensurate phase, the presence of two different characteristic relaxation time constants with the same temperature behaviour has been revealed. This peculiarity is considered as a result of a coexistence of two polar sublattices in the temperature range below 110 K. According to these results, the previously reported dielectric anomaly at about 103 K is considered as a final lock-in phase transition accompanied by the forming of the antiferroelectric state in TlGaSe₂.     

Investigation of dielectric after-effects in poly- and single crystalline BaTiO3

Dielectric relaxation occurring in single- and polycrystalline BaTiO₃, following different polarization treatments of the specimens has been investigated in the temperature range 10 K<T<450 K. The observed relaxation phenomena are discussed in terms of polarization induced growth of extra-domains which, via corresponding enhancement of the total domain wall area, may account for the time dependence of the dielectric constant. On the basis of this relaxation model the activation parameters of the different processes are determined and discussed in terms of variations of the wall mobility within the different crystallographic phases occurring in BaTiO₃.     

Anomalous increase in the unipolarity of doped lithium niobate crystals in the temperature range 300–400 K

The lithium niobate single crystals doped with B, Zn, and Gd at a content of 0.002–0.44 wt % have been grown. Their domain structure, static and dynamic piezoelectric properties, dielectric properties, and conductivity are investigated over a wide range of frequencies. The dielectric dispersion associated with the Debye-type relaxation process and considerable anomalies in ?′₂₂(T) and conductivity are revealed in the temperature range ～300–400 K. At these temperatures, the piezoelectric modulus d ₃₃ of the initial polydomain crystals LiNbO₃: Gd jumpwise increases up to the values close to those for the undoped single-domain crystal. This increase is accompanied by a substantial change in the etch patterns due to the domain structure of the crystal. The nature of the anomalies observed in LiNbO₃ in the above temperature range is discussed.     

Metal-insulator transition investigation in V2O3 by nuclear magnetic resonance and relaxation

The high temperature metal-insulator transition in pure V₂O₃ has been investigated by nuclear magnetic resonance and relaxation. The relaxation rate in the range 160–320K was found to satisfy the Korringa relaxation and at temperature above 550K to be constant as expected for a paramagnetic insulator. In the intermediate temperature range the high field resonance line shape showed broadening which we interpret as due to the coexistence of a metallic and an insulating phase.     

Dielectric relaxation and conformation of biphenyl derivatives

Dielectric relaxation of four symmetrically substituted biphenyls 2,2′-diflourobiphenyl, 3,3′-difluorobiphenyl, 3,3′-dicyanobiphenyl in p-xylene and 2,2′-dinitrobiphenyl in mesitylene has been studied in the microwave region 1.5–10 GHz over the temperature range 293 – 323 K. Dielectric relaxation exhibits the Debye-like character. The relaxation time (τ_D) and the enegry of activation (ΔH³_E were found to increase with the moment of inertia of a molecule about the axis perpendicular to the dipole moment direction of the molecules.The linear relationship between the dielectric increment (Δε) and the reciprocal temperature together with the above mentioned correlations, indicate that in the examined systems the mechanism responsible for the dielectric relaxation is the reorientation of rigid molecules.     

Transient optical absorption induced by an electron pulse in KPb<Subscript>2</Subscript>Cl<Subscript>5</Subscript> crystals

The efficiency of formation and time evolution of radiation-induced structural defects and pulsed luminescence in KPb₂Cl₅ crystals under the action of a single electron pulse (E = 250 keV, τ = 20 ns) have been investigated. The spectra (1.1–3.8 eV) and relaxation kinetics (time interval 5 × 10^?8?5 s) of transient optical absorption and the pulsed cathodoluminescence spectra and decay kinetics (1.4–3.1 eV) have been measured in the temperature range 80–300 K. It is revealed that the induced optical density and its time evolution depend strongly on temperature, and the absorption relaxation time contains several components and reaches several seconds at T = 300 K. The decay kinetics of transient absorption and pulsed cathodoluminescence kinetics have different orders and are controlled by different relaxation processes.     

Electrical properties and conduction mechanism in the sodium nickel diphosphate

The Na_3.6Ni_2.2(P₂O₇)₂ compound was obtained by the conventional solid-state reaction. The sample was characterized by X-ray powder diffraction and vibrational and impedance spectroscopy. The AC electrical conductivity and the dielectric relaxation properties of this compound have been investigated by means of impedance spectroscopy measurements over a wide range of frequencies and temperatures, 209 kHz–1 MHz and 564–729 K, respectively. Dielectric data were analyzed using complex electrical modulus M* at various temperatures. The peak positions ω _m of M″ spectra shift toward higher frequencies with increase in temperature. The AC conductivity data fulfill the power law. Application of the correlated barrier hopping model revealed that the ionic conduction takes place by single-polaron and bipolaron hopping processes.     

Low-frequency internal friction of polycrystalline ZrO2-4 mol % Y2O3 in the temperature range 273–373 K

The specific features in the low-frequency internal friction, structure, and phase composition of polycrystalline ZrO₂-4 mol % Y₂O₃ are investigated in the temperature range 273–373 K. It is demonstrated that the low-frequency internal friction exhibits two peaks upon heating and cooling. The former peak is observed at a temperature of approximately 293 K, and the latter peak is revealed at 313 K. It is assumed that the peak observed in the low-frequency internal friction at a temperature of 293 K is attributed to relaxation dissipation of energy during motion of twin boundaries in the monoclinic phase, whereas the peak at 313 K is associated with relaxation processes due to displacement of the boundaries of tetragonal T′ domains.     

High-temperature impedance spectroscopy of BaFe0.5Nb0.5O3 ceramics doped with Bi0.5Na0.5TiO3

Bi_0.5Na_0.5TiO₃ (BNT)-doped BaFe_0.5Nb_0.5O₃ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. The high-temperature conductivity of ceramics is attributable to thermally activated second ionized oxygen vacancy.     

Influence of sintering conditions and doping on the dielectric relaxation originating from the surface layer effects in CaCu3Ti4O12 ceramics

Detailed investigations into the dielectric dispersion phenomenon in the giant dielectric constant material CaCu₃Ti₄O₁₂ (CCTO) around room temperature revealed the existence of two successive dielectric relaxations. In the temperature domain, a new dielectric relaxation was clearly observed around 250 K, in addition to the well-investigated dielectric relaxation close to 100 K. The effect of sintering and doping (La³⁺) on the strength of these dielectric relaxations were studied in detail. The sintering temperature as well as its duration was found to have tremendous influence on the dielectric relaxation that was encountered around 250 K. This Maxwell-Wagner (M-W) type of relaxation was found to be originating from the surface layer containing the Cu-rich phase, which was ascribed to the difference in the oxygen content between the surface and the interior of the sample. Interestingly, this particular additional relaxation was not observed in La_2/3Cu₃Ti₄O₁₂, a low dielectric constant member of the CCTO family, in which the segregation of Cu-rich phase on the surface was absent. Indeed the correlation between the new relaxation and the presence of Cu-rich phase in CCTO ceramics was further corroborated by the absence of the same after removing the top and bottom layers.     

EPR Spectroscopy of Impurity Thulium Ions in Yttrium Orthosilicate Single Crystals

The frequency-field and orientation dependences of the electron paramagnetic resonance (EPR) spectra are measured for impurity Tm³⁺ ions in yttrium orthosilicate (Y₂SiO₅) single crystals by stationary EPR spectroscopy in the frequency range of 50–100 GHz at 4.2 K. The position of the impurity ion in the crystal lattice and its magnetic characteristics are determined. The temperature dependences of the spin–lattice and phase relaxation times are measured by pulse EPR methods in the temperature range of 5–15 K and the high efficiency of the direct single-phonon mechanism of spin–lattice relaxation is established. This greatly shortens the spin–lattice relaxation time at low temperatures and makes impurity Tm³⁺ ions in Y₂SiO₅ a promising basis for the implementation of high-speed quantum memory based on rare-earth ions in dielectric crystals.     

Phase transitions and dielectric relaxation in (1 − <Emphasis Type="Italic">x</Emphasis>)SrTiO<Subscript>3</Subscript>-<Emphasis Type="Italic">x</Emphasis>BiFeO<Subscript>3</Subscript> (0 ≤ <Emphasis Type="Italic">x</Emphasis> ≤ 0.04)

The dielectric and acoustic properties of (1 − x)SrTiO₃-xBiFeO₃ (0 ≤ x ≤ 0.04) solid solutions have been studied in the temperature range 10–300 K. The polar state exhibiting permittivity dispersion and dielectric hysteresis loops has been revealed at temperatures of 40–100 K. At 20–40 K, we have observed one more dielectric relaxation, which is not associated with the polar state and vanishes at a concentration of the second solid-solution component x = 0.04. The antiferrodistorsive transition has been found to vary with increasing concentration x. At temperatures below the antiferrodistorsive transition point, the polar (relaxor) state has been shown to persist in all the measured solid solutions.     

Dielectric property of CaCu3Ti4O12 thin film grown on Nb-doped SrTiO3(100) single crystal

Thin film of CaCu₃Ti₄O₁₂ (CCTO) has been deposited on Nb-doped SrTiO₃(100) single crystal using pulsed laser deposition. The dielectric constant and AC conductivity of CCTO film in the metal–insulator–metal capacitor configuration over a wide temperature (80 to 500 K) and frequency (100 Hz to 1 MHz) range have been measured. The small dielectric dispersion with frequency observed in the lower temperature region (<300 K) indicates the presence of small defects in the deposited CCTO thin film. The frequency-dependent AC conductivity at lower temperature indicates the hopping conduction. The dielectric dispersion data has been analyzed in the light of both conductivity relaxation and Debye type relaxation with a distribution of relaxation times. Origin of dielectric dispersion is attributed to the distribution of barrier heights such that some charge carriers are confined between long-range potential wells associated with defects and give rise to dipolar polarization, while those carriers which do not encounter long-range potential well give rise to DC conductivity.     

Dielectric relaxation of samarium aluminate

A ceramic SmAlO₃ (SAO) sample is synthesized by the solid-state reaction technique. The Rietveld refinement of the X-ray diffraction pattern has been done to find the crystal symmetry of the sample at room temperature. An impedance spectroscopy study of the sample has been performed in the frequency range from 50 Hz to 1 MHz and in the temperature range from 313 K to 573 K. Dielectric relaxation peaks are observed in the imaginary parts of the spectra. The Cole–Cole model is used to analyze the dielectric relaxation mechanism in SAO. The temperature-dependent relaxation times are found to obey the Arrhenius law having an activation energy of 0.29 eV, which indicates that polaron hopping is responsible for conduction or dielectric relaxation in this material. The complex impedance plane plot of the sample indicates the presence of both grain and grain-boundary effects and is analyzed by an electrical equivalent circuit consisting of a resistance and a constant-phase element. The frequency-dependent conductivity spectra follow a double-power law due to the presence of two plateaus.