The structure and optical properties of GeO2-GeS2 glasses

Oxy-chalcogenide glasses with compositions of xGeO₂-(100 − x)GeS₂, where 0 ? x ? 100 mol%, have been prepared and studied in terms of their structures and optical properties. X-ray fluorescence spectroscopy shows that Ge:S ratio can deviate from GeS₂ by ∼10 at.%, depending critically upon the preparation conditions. Raman scattering spectroscopy suggests that stoichiometric GeO₂-GeS₂ glasses have a heterogeneous structure in the scale of 1-100 nm. The optical gaps are nearly constant at 3.0-3.5 eV for glasses with 0 ? x ? 80 mol% and abruptly increase to ∼6 eV in GeO₂. This dependence suggests that the optical gap is governed by GeS₂ clusters, which are isolated and/or percolated. Composition-deviated glasses appear as orange and brown, and these glasses seem to have more inhomogeneous structures.     

Preparation and characterization of glasses in the Ag2S + B2S3 + GeS2 system

The glass forming range of the Ag₂S + B₂S₃ + GeS₂ ternary system was investigated for the first time and a wide range of ternary glasses were obtained. The Archimedes’ method was used to determine the densities of the Ag-B-Ge glasses. The thermal properties of these thioborogermanate glasses were studied by DSC and TMA. The Raman, IR and NMR spectroscopy were used to explore the short-range order structure of the binary (Ag-B) and (Ag-Ge) and ternary (Ag-B-Ge) glasses. The results show the presence of bridging sulfur tetrahedral units, GeS_4/2 and AgBS_4/2, and trigonal units, BS_3/2, in the ternary glasses. Non-bridging sulfur units, AgSGeS_3/2 and Ag₃B₃S₃S_3/2 six membered rings, are also observed in these glasses at higher Ag₂S modification levels because the further addition of Ag₂S results in the degradation of the bridging structures to form non-bridging structures. The NMR studies show that Ag₂S goes into the GeS₂ subnetwork to form Ag₃S₃GeS_1/2 groups before going to the B₂S₃ subnetwork. In doing so, it is suggested that B₁₀S₂₀ supertetrahedra exist in Ag₂S + B₂S₃ and Ag₂S + B₂S₃ + GeS₂ glasses. Significantly B-S-Ge bonds form in the B₂S₃ + GeS₂ glasses, whereas they appear to be absent in the ternary glasses. From these observations, a structural model for these glasses has been developed and proposed.     

Three-dimensional structure of fast ion conducting 0.5Li2S + 0.5[(1 − x)GeS2 + xGeO2] glasses from high-energy X-ray diffraction and reverse Monte Carlo simulations

A high-energy X-ray diffraction study has been carried out on a series of 0.5Li₂S + 0.5[(1 − x)GeS₂ + xGeO₂] glasses with x = 0.0, 0.1, 0.2, 0.4, 0.6 and 0.8. Structure factors were measured to wave vectors as high as 30 Å⁻¹ resulting in atomic pair distribution functions with high real space resolution. The three dimensional atomic-scale structure of the glasses was modeled by reverse Monte Carlo simulations based on the diffraction data. Results from the simulations show that at the atomic-scale 0.5Li₂S + 0.5[(1 − x)GeS₂ + xGeO₂] glasses may be viewed as an assembly of independent chains of (Li^+-S)₂GeS_2/2 and (Li^+-O)₂GeO_2/2 tetrahedra as repeat units, where the Li ions occupy the open space between the chains. The new structure data may help understand the reasons for the sharp maximum in the Li⁺ ion conductivity at x ∼ 0.2.     

Ge and Ga K-edge EXAFS analyses on the structure of Ge-Ga-S-CsBr glasses

The local structure of Ge and Ga ions in (1 − x)(Ge_0.25Ga_0.10S_0.65)-xCsBr glasses (x = 0.00, 0.05, 0.10 and 0.12) were investigated using extended X-ray absorption fine structure (EXAFS) spectroscopy. CsBr formed [GaS_3/2Br]⁻ structural units in glass while Ge ions remained in GeS_4/2 tetrahedra, unaffected by CsBr addition. Rare-earth ions can be surrounded by Br ions only when CsBr/Ga ratio in glass became larger than unity.     

Investigation of near constant loss contribution to conductivity in lithium bismo-silicate glasses

Glasses having compositions 20Li₂O · (80 − x)Bi₂O₃ · xSiO₂ (x = 55, 60, 65, 70 mol%) were investigated using impedance spectroscopy in the frequency range from 20 Hz to 1 MHz and in the temperature range from 543 to 663 K. The ac and dc conductivities, activation energy of the dc conductivity and relaxation frequency are extracted from the impedance spectra. The increase in conductivity with increase in SiO₂ content is attributed to the change in the structural units of bismuth. Both electric modulus and the conductivity formalism have been employed to study the relaxation dynamics of charge carriers in these glasses. A single ‘master curve’ for normalized plots of all the modulus isotherms observed for a given composition indicates the temperature independence of the dynamic processes for ions in these glasses. Similar values of activation energy for dc conduction and for conductivity relaxation time indicates that the ions overcome same energy barrier while conducting and relaxing. The observed conductivity spectra follows power law with exponent ‘s’ which increases regularly with frequency and approaches unity at higher frequencies. Near constant losses (NCL) characterize this linearly dependent region of conductivity spectra. A deviation from ‘super curve’ for various isotherms of conductivity spectra was also observed in high frequency region and at low temperatures, which supports the existence of different dynamic processes like NCL in addition to the ion hopping processes in the investigated glass system.     

Structure and properties of lithium thio-boro-germanate glasses

Structural studies of the ternary xLi₂S + (1 − x)[0.5B₂S₃ + 0.5GeS₂] glasses using IR, Raman, and ¹¹B NMR show that the Li₂S is not shared proportionately between the GeS₂ and B₂S₃ sub-networks of the glass. The IR spectra indicate that the B₂S₃ glass network is under-doped in comparison to the corresponding composition in the xLi₂S + (1 − x)B₂S₃ binary system. Additionally, the Raman spectra show that the GeS₂ glass network is over-modified. Surprisingly, however, the ¹¹Boron static NMR gives evidence that ∼80% of the boron atoms are in tetrahedral coordinated. A super macro tetrahedron, B₁₀S₁₈⁻⁶ is proposed as one of the structures in these glasses in which can account for the apparent low fraction of Li₂S present in the B₂S₃ sub-network while at the same time enabling the high fraction of tetrahedral borons in the glass.     

Short-range order evolution in S-rich Ge-S glasses by X-ray photoelectron spectroscopy

The structure of binary Ge_xS_100 − x chalcogenide glasses (10 < x < 30) is determined by high-resolution X-ray photoelectron spectroscopy (XPS). On the basis of compositional dependence of fitting parameters for Ge and S core level XPS spectra, the ratio between edge- and corner-shared tetrahedra is determined. It is shown that short-range order of these glasses includes fragments of high-temperature crystalline form of GeS₂. When subjected to X-irradiation, the structure of investigated glasses appears to become more homogeneous than that of the as-prepared samples.     

The comparative structure, properties, and ionic conductivity of LiI + Li2S + GeS2 glasses doped with Ga2S3 and La2S3

The well known and characterized fast ion conducting (FIC) LiI + Li₂S + GeS₂ glass-forming system has been further optimized for higher ionic conductivity and improved thermal and chemical stability required for next generation solid electrolyte applications by doping with Ga₂S₃ and La₂S₃. These trivalent dopants are expected to eliminate terminal and non-bridging sulfur (NBS) anions thereby increasing the network connectivity while at the same time increasing the Li⁺ ion conductivity by creating lower basicity [(Ga or La)S_4/2]⁻ anion sites. Consistent with the finding that the glass-forming range for the Ga₂S₃ doped compositions is larger than that for the La₂S₃ compositions, the addition of Ga₂S₃ is found to eliminate NBS units to create bridging sulfur (BS) units that not only gives an improvement to the thermal stability, but also maintains and in some cases increases the ionic conductivity. The compositions with the highest Ga₂S₃ content showed the highest T_gs of ∼325 °C. The addition of La₂S₃ to the base glasses, by comparison, is found to create NBS by forming high coordination octahedral LaS₆³⁻ sites, but yet still improved the chemical stability of the glass in dry air and retained its high ionic conductivity and thermal stability. Significantly, at comparable concentrations of Li₂S and Ga₂S₃ or La₂S₃, the La₂S₃-doped glasses showed the higher conductivities. The addition of the LiI to the glass compositions not only improved the glass-forming ability of the compositions, but also increased the ionic conductivity glasses. LiI concentrations from 0 to 40 mol% improved the conductivities of the Ga₂S₃ glasses from ∼10⁻⁵ to ∼10⁻³ (Ω cm)⁻¹ and of the La₂S₃ glasses from ∼10⁻⁴ to ∼10⁻³ (Ω cm)⁻¹ at room temperature. A maximum conductivity of ∼10⁻³ (Ω cm)⁻¹ at room temperature was observed for all of the glasses and this value is comparable to some of the best Li ion conductors in a sulfide glass system. Yet these new compositions are markedly more thermally and chemically stable than most Li⁺ ion conducting sulfide glasses. LiI additions decreased the T_gs and T_cs of the glasses, but increased the stability towards crystallization (T_c − T_g).     

Raman spectra of GeSbS system glasses in the S-rich region

Raman spectra of the Ge_xSb_yS_z glasses with sulfur concentration ?65 at.% are given and discussed. From the obtained Raman spectra it is concluded that the presence of small concentrations of Ge atoms of more than the (GeS₂)_1?x(Sb₂S₃)_x compositions results in the formation of S₃GeGeS₃ structural units. On the other hand the presence of small concentrations of excess sulfur results in replacing some individual bridging S atoms by ?SS? bridging groups. At higher concentrations of the excess sulfur the S atoms form S₈ ring molecules which are dissolved in the network structure of the glass composed of GeS₄ tetrahedra and SbS₃ pyramids interconnected by one or two sulfur atoms.     

Microstructure and thermal properties of the GeS2–In2S3–CsI glassy system

A new series of chalcohalide glasses in the GeS₂–In₂S₃–CsI pseudo-ternary system were prepared by conventional melt-quenching method. The glass-forming region was determined and it is mainly situated in the GeS₂-rich domain. The glasses have relatively high glass transition temperatures (T_g ranges from 335 to 405 °C) and good thermal stabilities. Based on the Raman spectra, it can be speculated that the glassy net is mainly constituted by [GeS₄] and [InS_4?xI_x] tetrahedra, which are interconnected by the bridging sulfur atoms. And the ethane-liked structural units [S₃Ge–GeS₃] can be formed because of the lacking of sulfur. Cs⁺ ion, which was added from CsI, exists as the nearest neighbor of I^? ion.     

Laser-induced crystallization of β′-RE2(MoO4)3 ferroelectrics (RE: Sm, Gd, Dy) in glasses and their surface morphologies

The glasses with the compositions of 21.25RE₂O₃-63.75MoO₃-15B₂O₃ (RE: Sm, Gd, Dy) were prepared and the formation of β′-RE₂(MoO₄)₃ ferroelectrics was confirmed in the crystallized glasses obtained through a conventional crystallization in an electric furnace. The features of the glass structure and crystallization behavior were clarified from measurements of Raman scattering spectra. Continuous-wave Nd:YAG laser with a wavelength of 1064 nm (laser power: 0.6-0.9 W, laser scanning speed: S = 1-16 μm/s) was irradiated to 10.625Sm₂O₃-10.625Gd₂O₃ (or Dy₂O₃)-63.75MoO₃-15B₂O₃ glasses, and the structural modification was induced at the glass surface. At the scanning speed of S = 10 μm/s, crystal lines consisting of β′-Gd_2−xSm_x(MoO₄)₃ or β′-Dy_2−xSm_x(MoO₄)₃ crystals were patterned on the glass surface. It was found that those crystal lines have the surface morphology with periodic bumps. At S = 1 μm/s, it was found that crystal lines consist of the mixture of paraelectric α-Gd_2−xSm_x(MoO₄)₃ and ferroelectric β′-Gd_2−xSm_x(MoO₄)₃ crystals, indicating the phase transformation from the β′ phase to the α phase during laser irradiation. Homogeneous crystal lines with β′-RE₂(MoO₄)₃ ferroelectrics have not been written in this study, but further research is continuing.     

Signatures of an extended rigidity percolation in the photo-degradation behavior and the composition dependence of photo-response of Ge-Te-In glasses

Time dependent photocurrent measurements have been undertaken on bulk Ge₁₅Te_85−xIn_x (1 ? x ? 11) series of glasses. It is found that samples with x < 3 do not exhibit any photo-degradation whereas a decrease in photo-conductivity under illumination is observed in samples with x ? 3. Further, the photosensitivity of Ge₁₅Te_85−xIn_x glasses is found to reveal specific signatures at compositions x = 3 and 7. The observed composition dependent photo-degradation behavior and photo-response of these glasses have been understood on the basis of an extended rigidity percolation and its influence on network related properties.     

Non-Debye excess heat capacity and boson peak of binary lithium borate glasses

The non-Debye excess heat capacities of binary lithium borate glasses with different Li₂O compositions of x = 8, 14 and 22 (mol%) are investigated to understand origin of the boson peak. The low-temperature heat capacities are measured between 2 and 50 K by a relaxation calorimeter. The experimental non-Debye heat capacities with x = 14 is successfully reproduced using the excess vibrational density of states measured by inelastic neutron scattering. This finding indicates that the non-Debye heat capacities of lithium borate glasses originate from the excess vibrational density of states measureable by inelastic neutron scattering. Moreover, it is demonstrated that all of the excess heat capacity spectra lie on a single master curve by the scaling using boson peak temperature and intensity.     

Crystal/glass phase change in K1−xRbxSb5S8 (x = 0.25, 0.50, 0.75) studied through thermal analysis techniques

K_1−xRb_xSb₅S₈ (x = 0.25, 0.5, 0.75) is a well-defined single-phase system that undergoes a reversible phase-change. We determined the activation energy of glass transition and crystallization, respectively, for the three compositions using the Kissinger and Ozawa-Flynn-Wall equations. The results have shown that for K_0.25Rb_0.75Sb₅S₈ the crystallization mechanism could be interpreted in terms of a single-step reaction. For the other two compositions the glass-to-crystal transformation is a process of increasing mechanistic complexity with time and it involves simultaneously several different nucleation and growth events. The slope of the lines in the Avrami plots was observed to be independent of heating rate for K_0.25Rb_0.75Sb₅S₈ and the mean value of the activation energy was found to be 262 ± 6 kJ/mol. For the other two compositions, the slope varies with the heating rate. In the K_0.25Rb_0.75Sb₅S₈ glasses, bulk nucleation with three-dimensional crystal growth appears to dominate the phase-change process.     

Compositional dependence of the optical properties of amorphous Sb2Se3−xSx thin films

Thin films of Sb₂Se_3−xS_x solid solutions (x = 0, 1, 2, and 3) were deposited by thermal evaporation of presynthesized materials on glass substrates held at room temperature. The films compositions were confirmed by using energy dispersive analysis of X-rays (EDAX). X-ray diffraction studies revealed that all the as-deposited films as well as those annealed at T_a < 423 K have amorphous phase. The optical constants (n, k) and the thickness (t) of the films were determined from optical transmittance data, in the spectral range 500-2500 nm, using the Swanepoel method. The dispersion parameters were determined from the analysis of the refractive index. An analysis of the optical absorption spectra revealed an Urbach’s tail in the low absorption region, while in the high absorption region an indirect band gap characterizes the films with different compositions. It was found that the optical band gap energy increases quadratically as the S content increases.     

Far infrared transmission and structure of PbGeS semiconducting glasses

Lead sulfide has been found to form stable glasses with GeS₂ in the presence of GeS. Far-infrared transmission spectra of the glassy compositions x = 0.46, 0.23 and 0.115 in the pseudoternary (PbS)_x (GeS₂)_0.70?x (GeS)_0.30 and of the stoichiometric crystalline composition Pb₂GeS₄ have been observed for the first time. The results indicate a two optical mode behaviour of the compounds. The presence of the heavy lead atom in the GeS network seems to appreciably affect the bond bending modes of the GeS₄ molecular unit without significantly disturbing its bond stretching vibrations. The presence of S₃GeGeS₃ molecular units in the amorphous compositions and their absence in Pb₂GeS₄ are indicated.     

The presence of a thermally reversing window in Al-Te-Si glasses revealed by alternating differential scanning calorimetry and electrical switching studies

Alternating differential scanning calorimetric (ADSC) studies and electrical switching experiments have been undertaken on Al₁₅Te_85−xSi_x (2 ? x ? 12) system of glasses. These glasses are found to exhibit two crystallization reactions (T_c1 and T_c2), for compositions with x < 8. Above x = 8, a single-stage crystallization is seen. Further, a trough is seen in the composition dependence of non-reversing enthalpy (ΔH^NR), based on which it is proposed that there is a thermally reversing window in Al₁₅Te_85−xSi_x glasses, in the composition range 4 ? x ? 8. Electrical switching studies indicate that Al₁₅Te_85−xSi_x glasses exhibit a threshold type electrical switching at ON state currents less than 2 mA. Further, the switching voltages are found to increase with the increase in silicon content. It is interesting to note that the start (x = 4) and the end (x = 8) of the thermally reversing window are exemplified by a kink and a saturation in the composition dependence of switching voltages, respectively.     

Structure and properties of glasses in the MI + M2S + (0.1Ga2S3 + 0.9GeS2), M = Li, Na, K and Cs, system

The structure and properties of glasses in the MI + M₂S + (0.1Ga₂S₃ + 0.9GeS₂), M = Li, Na, K and Cs, system were studied using Raman, IR spectroscopy, DSC and density measurements to help better understand the ionic transport in these glasses. The glass forming ranges of these ternary glasses were compared to those of the binary alkali sulfide and germanium sulfide systems. The more extensive glass forming range in the Na₂S system was used to examine the more extensive changes of structure and properties of these glasses as a function of Na₂S content. As expected, non-bridging sulfurs (NBS) form with the addition of alkali sulfide. Unlike their oxide counterparts, however, the alkali sulfide doped glasses appear to support longer-range super-structural units. For example, evidence that the adamantine-like structure exists in the K₂S and Cs₂S modified glasses is found in the Raman spectra of the glasses. The structural role of the alkali iodide addition was also explored since the addition of alkali iodide helps to improve the conductivity. For most of these glasses, as observed in many other oxide glasses, the added MI dissolves interstitially into the glass structure network without changing the alkali sulfide network structure. In 0.6Na₂S + 0.4(0.1Ga₂S₃ + 0.9GeS₂) glasses, however, the added NaI may affect the glass structure as it causes systematic changes in the frequency of the Ge-S network mode as seen in the Raman spectra.     

Ion conductive chalcohalide glasses in LiI–Ga2S3–GeS2 system

The electric properties of LiI containing chalcohalide glasses in the system Ga₂S₃–GeS₂ were studied by means of impedance spectroscopy and potentiostatic chronoamperometry. Two sets of the samples were prepared by direct synthesis from elements and compounds in evacuated quartz ampoules. The prepared glasses were as follows: xLiI–xGa₂S₃–(100?2x)GeS₂, x = 15, 20, 25 and 20LiI–xGa₂S₃–(80?x)GeS₂, x = 0, 5, 10, 15 and 20. In the first set the concentration of LiI increased and the second set was prepared to study the influence of Ga₂S₃ on the properties of the glasses. Additional aim of this work was to compare the electric properties of LiI containing Ga₂S₃–GeS₂ glasses with analogous AgI containing Ga₂S₃–GeS₂ glasses recently studied by us. The conductivity of the LiI containing glasses in the Ga₂S₃–GeS₂ system was higher and the activation energy was lower than in the analogous AgI containing system. The residual electronic (hole) conductivity remained similar in both systems being almost negligibly low. Raman spectroscopy proved the influence of LiI as well as Ga₂S₃ on glass structure, however interpretation of Raman spectra of these glasses is complicated due to small mass difference between gallium and germanium.     

Structural study of AsS2–Ag glasses over a wide concentration range

(As_0.33S_0.67)_100-xAg_x (0 ≤ x ≤ 28) bulk glasses showing micro-phase separation in a wide concentration range have been studied by X-ray diffraction, neutron diffraction and extended X-ray absorption fine structure measurements. The AsAgS₂ composition, which forms a homogeneous glass, is modeled with the reverse Monte-Carlo simulation technique. It is established that Ag prefers the environment of S; Ag―As bonding cannot be observed. Similarly to the AsAgS₂ crystalline modifications smithite and trechmannite, the main structural units of the glass are AsS₃ pyramids. The covalent network of As and S atoms becomes fragmented in the glassy AsAgS₂ unlike in the glassy AsS₂. The environment of Ag atoms in the AsAgS₂ glass differs from that in the crystalline state. In average, each Ag atom has four nearest neighbors, three of them being S and one being Ag.