Synthesis,conversion and comparison of the photocatalytic and electrochemical properties of ZnSe·N2H4 and ZnSe microrods

Novel ZnSe·N₂H₄ complex microrods with ∼2 μm in length and 100∼200 nm in diameter were successfully prepared by the solvothermal method at 110°C for 10 h, employing ZnAc₂·2H₂O and Se powders as the reactants, N₂H₄·H₂O as the reductant and medium. Experiments showed that the as‐obtained complex could be further converted into pure hexagonal ZnSe in an ethanol medium at 180 °C for 10 h, and the morphology hardly changed. The as‐prepared products were characterized by X‐ray powder diffraction (XRD), Energy dispersive spectrum (EDS), IR spectrum, Thermogravimetric (TG) analysis and Field emission scanning electron microscopy (SEM). Also, their photocatalytic degradation and electrochemical property were compared. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth

Electrical properties, deep traps spectra and structural performance were studied for m-GaN films grown on m-SiC substrates by standard metalorganic chemical vapor deposition (MOCVD) and by MOCVD with lateral overgrowth (ELO) or sidewall lateral overgrowth (SELO). Standard MOCVD m-GaN films with a very high dislocation density over 10⁹ cm⁻² are semi-insulating n-type with the Fermi level pinned near E_c−0.7 eV when grown at high V/III ratio. For lower V/III they become more highly conducting, with the electrical properties still dominated by a high density (∼10¹⁶ cm⁻³) of E_c−0.6 eV electron traps. Lateral overgrowth that reduces the dislocation density by several orders of magnitude results in a marked increase in the uncompensated shallow donor density (∼10¹⁵ cm⁻³) and a substantial decrease of the density of major electron traps at E_c−0.25 and E_c−0.6 eV (down to about 10¹⁴ cm⁻³). Possible explanations are briefly discussed.     

Characterization of hydrogenated amorphous silicon thin films prepared by magnetron sputtering

Magnetron sputtered hydrogenated amorphous silicon (a-Si:H) thin films have been characterized. Hydrogen (H₂) with argon (Ar) was introduced into the sputtering chamber to create the plasma. A sudden increase in the deposition rate occurred when the hydrogen was added. The maximum hydrogen content of 16 atomic percent (at.%) was achieved and a bandgap of about 2.07 eV was determined from the spectral investigations of the hydrogenated films. The effect of radio frequency (RF) power on the deposition rate, as well as on the hydrogen content was investigated. To change the hydrogen content in the films, the hydrogen flow rate was varied while keeping the argon flow rate constant. The hydrogen content in the films increased with increasing hydrogen flow rate up to the maximum content of 16 at.% and then decreased for further increases in hydrogen flow.     

Surface morphology,structural and optical properties of polar and non-polar ZnO thin films: A comparative study

The polar and non-polar ZnO thin films were fabricated on cubic MgO (1 1 1) and (0 0 1) substrates by plasma-assisted molecular beam epitaxy. Based on X-ray diffraction analysis, the ZnO thin films grown on MgO (1 1 1) and (1 0 0) substrates exhibit the polar c-plane and non-polar m-plane orientation, respectively. Comparing with the c-plane ZnO film, the non-polar m-plane ZnO film shows cross-hatched stripes-like morphology, lower surface roughness and slower growth rate. However, low-temperature photoluminescence measurement indicates the m-plane ZnO film has a stronger 3.31 eV emission, which is considered to be related to stacking faults. Meanwhile, stronger band tails absorbance of the m-plane ZnO film is observed in optical absorption spectrum.     

Microstructure and dielectric properties of La2O3 films prepared by ion beam assistant electron-beam evaporation

Ultrathin La₂O₃ gate dielectric films were prepared on Si substrate by ion assistant electron-beam evaporation. The growth processing, interfacial structure and electrical properties were investigated by various techniques. From XRD results, we found that the La₂O₃ films maintained the amorphous state up to a high annealing temperature of 900 °C for 5 min. From XPS results, we also discovered that the La atoms of the La₂O₃ films did not react with silicon substrate to form any La-compound at the interfacial layer. However, a SiO₂ interfacial layer was formed by the diffusion of O atoms of the La₂O₃ films to the silicon substrate. From the atomic force microscopy image, we disclosed that the surface of the amorphous La₂O₃ film was very flat. Moreover, the La₂O₃ film showed a dielectric constant of 15.5 at 1 MHz, and the leakage current density of the La₂O₃ film was 7.56 × 10⁻⁶ A/cm² at a gate bias voltage of 1 V.     

Systematic studies of Si and Ge hemispherical concave wafers prepared by plastic deformation

Si and Ge hemispherical concave wafers can be prepared by plastic deformation using Si and Ge single- and polycrystal wafers. Deformation regions in which such Si and Ge hemispherical wafers can be obtained by high-temperature plastic deformation were systematically studied. The deformation regions in which well-shaped Si concave wafers can be obtained were studied for (1 0 0), (1 1 1), and polycrystal Si. It was found that Si (1 1 1) crystal wafers can be more easily deformed to a perfect hemispherical shape than (1 0 0) wafers because of the crystallographic symmetry. Si hemispherical wafers with a small radius of 25 mm can be perfectly deformed when 0.5-mm-thick Si (1 1 1) crystal wafers are used. Ge hemispherical wafers with a radius of 100 mm can be perfectly deformed when 0.5-mm-thick Ge crystal wafers are used. Ge hemispherical concave wafers with a perfect shape can be more easily obtained using Ge (1 1 1) wafers than (1 0 0) wafers. According to these results, the deformation behavior of Ge wafers is very similar to that of Si wafers at a normalized pressing temperature. As both the radius and the load on Si and Ge hemispherical wafers increase, thicker Si and Ge wafers can be used to obtain hemispherical wafers with a perfect shape. The dislocation density in the shaped wafers markedly decreases as the pressing temperature and hemisphere radius increase. Thus, it is suggested that Si and Ge shaped wafers are of sufficient quality and have the high potential for use as several types of lens such as those in Si and Ge X-ray monochromators.     

Preparation of single-crystalline ZnO films on ZnO-buffered a-plane sapphire by chemical bath deposition

High-quality zinc oxide (ZnO) films were successfully grown on ZnO-buffered a-plane sapphire (Al₂O₃ (1 1 2¯ 0)) substrates by controlling temperature for lateral growth using chemical bath deposition (CBD) at a low temperature of 60 °C. X-ray diffraction analysis and transmission electron microscopy micrographs showed that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. Rocking curves (ω-scans) of the (0 0 0 2) reflections showed a narrow peak with full width at half maximum value of 0.50° for the ZnO film. A reciprocal space map indicated that the lattice parameters of the ZnO film (a=0.3250 nm and c=0.5207 nm) were very close to those of the wurtzite-type ZnO. The ZnO film on the ZnO-buffered Al₂O₃ (1 1 2¯ 0) substrate exhibited n-type conduction, with a carrier concentration of 1.9×10¹⁹ cm⁻³ and high carrier mobility of 22.6 cm² V⁻¹ s⁻¹.     

Improvement in crystallinity and optical properties of ZnO epitaxial layers by thermal annealed ZnO buffer layers with oxygen plasma

ZnO epitaxial layers with treated low-temperature (LT) ZnO buffer layers were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on p-type Si (1 0 0) substrates. The LT-ZnO buffer layers were treated by thermal annealing in O₂ plasma with various radio frequency (RF) power ranging from 100 to 300 W before the ZnO epilayers growth. Atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD), and room-temperature (RT) photoluminescence (PL) were carried out to investigate their structural and optical properties. The surface roughness measured by AFM was improved from 2.71 to 0.59 nm. The full-width at half-maximum (FWHM) of the rocking curve observed for ZnO (0 0 2) XRD and photoluminescence of the ZnO epilayers was decreased from 0.24° to 0.18° and from 232 to 133 meV, respectively. The intensity of the XRD rocking curve and the PL emission peak were increased. The XRD intensity ratio of the ZnO (0 0 2) to Si substrates and PL intensity ratio of the near-band edge emissions (NBEE) to the deep-level emissions (DLE) as a function of the RF power was increased from 0.166 to 0.467 and from 2.54 to 4.01, respectively. These results imply that the structural and optical properties of ZnO epilayers were improved by the treatment process.     

Optical properties of Ag nanocrystals in Sc and O sequentially implanted silica

The implantation of Sc and O results in the modification of the silica with polarizable Sc³⁺ ions. During annealing the Sc ions are incorporated with the O in the network to form a Sc-O-silicate layer. Subsequent implantation of Ag into this layer results in the formation of Ag metal nanocrystals with significantly modified optical properties compared to samples without the Sc ions. The size distribution of the Ag nanocrystals narrowed with increasing Sc concentration, due to the gradual elimination of a band of large Ag clusters. The incorporation of the Sc results in a shift in the wavelength of the surface plasmon resonance of the Ag nanocrystals and a change in the magnitude of the surface plasmon resonance absorption. The results are interpreted using effective medium theory.     

The effect of implanting nitrogen on the optical absorption and electron paramagnetic resonance spectra of silica

Silica samples (type III, Corning 7940) were implanted with N using multiple energies to produce a layer ∼600 nm thick in which the concentration of N was constant to within ±5%. The optical absorption spectra of the samples were measured from 1.8 to 6.5 eV. Electron paramagnetic resonance (EPR) measurements were made at ∼20.3 and 33 GHz for sample temperatures ranging from 77 K to 100 K for most measurements. The components identified in the EPR spectra, based on comparison with reported parameters, were due to E′ centers and peroxy radicals. By comparing the changes in the optical absorption at 5.85 eV with the changes in the concentrations of the various EPR components and with the reports in the literature, we conclude that there is an additional band at 5.7-5.9 eV other than the E′ center band. We conclude that the bands between 2 and 6.5 eV and the EPR spectral components produced by implantation of N are due to radiation damage processes; neither optical bands nor EPR components related to N are detected.     

Structure of potassium germanophosphate glasses by X-ray and neutron diffraction: 2. Medium-range order

Characteristics of the medium-range order (MRO) of K₂O-GeO₂-P₂O₅ (KGP) glasses are obtained from X-ray and neutron scattering data. The behavior of the MRO is expressed in changes of pre-peaks and smooth contributions in the structure factors, S(Q), for Q < 12 nm^-1. Peaks at Q = (7.5 ± 0.5) nm^-1 (Q - magnitude of the scattering vector) are the outstanding features and reach maximum intensity for a glass of ∼25/50/25 mol% K₂O/GeO₂/P₂O₅. The pre-peaks are explained by a structural model in which K-rich and Ge-rich regions are separated by PO₄ units. The distance of repetition of similar regions (∼1 nm) is responsible for the pre-peak at ∼7.5 nm^-1. The intensity of this pre-peak is reduced and finally eliminated for glass compositions approaching the binary GeO₂-P₂O₅ system. The pre-peak is changed to a smooth scattering contribution and finally shifted to ∼9 nm^-1 for glass compositions approaching the binary K₂O-GeO₂ system. The strong tendency of the PO₄ units to coordinate K⁺ and Ge neighbors at their four corners is the source for the special MRO of the KGP glasses.     

Structural analysis of Cd-Te-O films prepared by RF reactive sputtering

Crystalline and microcrystalline Cd-Te-O samples have been obtained by RF reactive sputtering from a CdTe target using N₂O as oxidant. The growth conditions were substrate temperatures of 323 K, 573 K and 773 K and cathode voltage of −400 V, corresponding to 30 W of forward power. The samples were studied by micro-Raman spectroscopy, X-ray diffraction and optical transmittance. The films are remarkably transparent in the visible range, with transmittances about 88% at 400 nm and band gap energies above the absorption edge of the glass substrates. Although only the samples prepared at 773 K present defined diffraction peaks, the analysis of the Raman spectra indicate that samples prepared at 323 K and 573 K have a defined microstructure indeed. The spectra fitting performed by comparison with pattern compounds demonstrate that Cd-Te-O films are formed of Te-O units similar to those present in metal oxide-doped tellurite glasses, such as TeO₃ and TeO_3 + 1 linked through Cd-O bonds. As the substrate temperature increases the microstructure evolves from a γ-TeO₂ richer state to Cd_xTe_yO_z. In the crystalline sample the main phase identified was CdTeO₃ even though evidence of other phases was observed.     

The effect of thermal annealing on the structural and mechanical properties of a-C:H thin films prepared by the CFUBM magnetron sputtering method

a-C:H films were prepared by closed-field unbalanced magnetron (CFUBM) sputtering on silicon substrates using argon (Ar) and acetylene (C₂H₂) gases, and the effects of post-annealing temperature on structural and mechanical properties were investigated. Films were annealed at temperatures ranging from 300 °C to 700 °C in increments of 200 °C using rapid thermal annealing equipment in vacuum ambient. Variations in microstructure were examined using Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Surface and mechanical properties were investigated by atomic force microscopy (AFM), nano-indentation, residual stress tester, and nano-scratch tester. We found that the mechanical properties of a-C:H films deteriorated with increased annealing temperature.     

Properties of gallium- and aluminum-doped bulk ZnO obtained from single-crystals grown by liquid phase epitaxy

Bulk properties of gallium (Ga)- and aluminum (Al)-doped zinc oxide (ZnO) were studied using bulky single-crystalline thick films grown by liquid phase epitaxy (LPE). The highest possible dopant concentration was 1×10¹⁹ cm^–3 for LPE growth at around 800 °C. The electron concentration was nearly same to the Ga and Al concentrations. The donor binding energy decreased to nearly zero with an increase in dopant concentration, and electron mobility of the sample with relatively high dopant concentration (1×10¹⁹ cm^–3) was more than 60 cm² V^–1 s^–1 at room temperature. The LPE technique is a potential solution for the production of ZnO for optical applications because the well-defined excitonic luminescence could be seen from the LPE-grown-doped single-crystals.     

Optical and structural properties of lead iodide thin films prepared by vacuum evaporation method

Thermally processed lead iodide (PbI₂) thin films were prepared by the vacuum evaporation method in a constant ambient. Measured thickness of the film was verified analytically from the optical transmittance data in a wavelength range between 300 and 1600 nm. From the Tauc relation for the non‐direct inter band transition, the optical band gap of the film was found to be 2.58 eV for film thickness 300 nm. X‐ray diffraction analysis confirmed that PbI₂ films are polycrystalline, having hexagonal structure. The low fluctuation in Urbach energy indicates that the grain size is quite small. The present findings are in agreement with the other results. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of InN films and nanostructures by MOVPE

Since a few years, a lot of research efforts have been devoted to InN, the least known of the semiconducting group-III nitrides. Most of the samples available today have been grown using the molecular beam epitaxy technique, and fewer using the metal organic vapor phase epitaxy (MOVPE) method. Whatever the method, the growth of InN is extremely challenging, in particular due to the fact that no lattice matched substrate is available.     

Synthesis,characterization and optical properties of ZnO nanoparticles with controlled size and morphology

Zinc oxide monodispersed nanoparticles were synthesized using a modified polyol process without any requirement to use a catalyst or calcination step at high temperature. The morphology and the size of the resulting oxide particles were adjusted by using several synthesis parameters (temperature, alkaline ratio, hydrolysis ratio, etc.). The increasing of the alkaline ratio results in a great change of the elaborated particles morphology that evolved from irregular and anisotropic forms (conical, nanorod-like and elliptical) to spherical one. A growth mechanism of these particles was proposed on the basis of zincite crystal structure and the morphology evolution as a function of the synthesis parameters. The photoluminescence spectra show UV-excitonic and visible emission bands. The strongest intensity of the visible emission was observed in nanorod-like particles, which implies an increased fraction of oxygen vacancies in this sample. The rod-like particles with 1 μm length show the dominant UV-emission, which evidences their improved stoichiometry.     

Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications

A comparative study of cathodoluminescence ultraviolet photon yields and decay times of large area GaN and zinc oxide (ZnO) layers grown for scintillator applications by metalorganic vapor phase epitaxy is presented. Silicon-doped GaN and non-intentionally-doped ZnO yield up to 1.4±0.2 photons/kVe⁻ and 1.3±0.2 photons/kVe^– at room-temperature, respectively. For GaN the decay times scatter between 0.4 and 0.9 ns, and for ZnO between 2.5 and 3.0 ns. The GaN and the ZnO absorption coefficients, α, internal efficiencies, η_i, and radiative constants, B, are determined. The characteristics of thin-film scintillators based on these materials are compared with commercially available granular scintillators.     

Growth and characterization of N-polar and In-polar InN films by RF-MBE

The structural and electrical properties of N- and In-polar InN films grown directly on substrates were investigated. The twist contribution of directly grown InN films, which was defined by the estimated X-ray rocking curve's full-width at half-maximum (XRC's FWHM) of InN (1 01¯ 0) reflection, varied considerably by at least 40 arcmin for both N- and In-polar InN films, depending on growth conditions. In contrast, the tilt contribution, defined by the XRC's FWHM of InN (0 0 0 2) reflection, was roughly fixed at 1.5–2.5 arcmin for N-polar InN films and 8–12 arcmin for In-polar InN films. For samples with the same twist contribution, In-polar InN films had larger tilt contribution than N-polar InN films. Nevertheless, electrical properties of In-polar InN had much better properties than those of N-polar InN films.     

Influence of Si doping on the optical and structural properties of InGaN films

Influence of Si doping on the optical and structural properties of InGaN epilayers with different Si concentrations was investigated in detail by means of high-resolution X-ray diffraction (HRXRD), scanning electron microscope (SEM), Cathodoluminescence (CL) and photoluminescence (PL). It was found that a small amount of Si doping in InGaN could enhance luminescence intensity, improve the crystal quality of InGaN and suppress the formation of V-defects in InGaN. Further investigation by CL showed that V-defects act as nonradiative center, which lower the luminescence efficiency of InGaN. Based on above-mentioned results, one possible mechanism of influence of Si doping on the formation of V-defects in InGaN was also proposed in this paper.