Stability of polymer films as a 2D system

According to classical theory of phase transition, fluctuations in systems with low dimensions are so violent that the phase boundary between unstable and metastable states would be smeared. In this experiment, we measure the growth of surface fluctuations on an unstable polymer film with a thickness, h₀ = 5.1 nm, which is much less than the spinodal thickness, h _sp (= 243 nm) thereby the film is in the very deep unstable region. We find the film to show rupturing behavior markedly different from that of an unstable film. Specifically, nucleation of holes – a characteristic rupturing feature of metastable films – is prominent, which is surprising for a film in the very deep unstable region even provision is given to thin films being two-dimensional and hence are susceptible to broadening of the phase boundary by fluctuations. Monte Carlo simulation shows that the nucleated holes can be caused by stochastic thermal fluctuations. Our result thus confirms the broadening of the phase boundary in thin films by fluctuations to be extremely large. As a consequence, the phase behavior of thin films cannot be predicted by the mean-field calculated phase boundary, which however has been the general practice so far.     

Nanoscopic size effects on martensitic transformations in shape memory alloys

The effect of the grain size and transverse film size in nano-and micrometer ranges on the parameters of martensitic transitions in shape memory alloys is theoretically considered in the framework of the theory of diffuse martensitic transitions. A quantitative analysis of the size effects is performed including not only the thermodynamic aspect of the martensitic transformation but also its kinetic aspect, which is particularly sensitive to structural and size factors. This complex approach makes it possible to explain the following three basic facts associated with the influence of a decreased grain size or transverse film size on the parameters of the martensitic transition in shape memory alloys: a decrease in the critical (characteristic) transition temperature, an increase in the transition temperature smearing, and the existence of a critical grain size or film thickness below which the martensitic transformation in alloys is blocked.     

Phase transitions in uniaxial ferromagnetic film covered by superconducting layers

The phase diagram and the single-domain uniform state for a uniaxial ferromagnetic film with the superconducting layers covering one or both sides of a ferromagnet are investigated. The superconductor is supposed to be a second-order one and the interaction between the magnetic sub-system and with the conductivity electrons in a superconductor is purely electromagnetic and the vortices in a superconductor are pinned. The critical thickness of the magnetic film for which the uniform state becomes absolutely stable is calculated when the external magnetic field is supposed to be in-plane of the film. It is shown that the critical thickness of the film from the magnetic material with the quality factor Q>1 monotonically decreases as the magnetic field increases in the range from zero value to the value of the transition field where the collinear phase transforms into the angular (canted) phase. Further the critical thickness increases with the increase of the field. The quasi-single-domain magnetic film states were considered when the film thickness was close to the critical one. It is shown that for a thin isolated magnetic film the domain period exponentially increases with the decrease of the film thickness. Such dependence, however for the film with double-side superconducting cover and close to the transition into the single domain state becomes logarithmic and for the film covered by superconductor only on the one side varies as the power series. The single-domain state existence and the asymptotic behaviour of the domain structure is explained by the features of the asymptotic behaviour of the domain walls within the system. As for isolated magnetic film and for a film with the superconductor cover layers the transition from the collinear phase to the inhomogeneous state is the second-order phase transition and the transition from the uniform angular phase to the inhomogeneous phase is the first-order transition.     

Effect of microstructure on ~3He migration in TiT_(1.9) films

Two kinds of films were prepared to study the effect of microstructure on helium migration in Ti tritides. Both films showed different release behaviors and helium bubble distributions. In the film consisting of columnar grains, a twolayered structure was observed. Inclusions with a strip feature were found at the grain boundary, and no helium bubbles were distributed in these inclusions. However, helium preferred to migrate to the boundaries of these inclusions. Bubble linkage as a ribbon-like feature developed parallel to the film surface in the film consisting of columnar grains. More cracks were developed at the grain boundaries of the film consisting of columnar grains, although the helium content in the film consisting of columnar grains was less than that in the film consisting of equiaxed grains. A surface region with a small number of bubbles, or "depleted zone", was observed near the surface. The cracks extending to the film surface were the pathways of the critical helium released from the film. The helium migration was strongly influenced by the grain microstructure.     

Instability of Epitaxially Strained Thin Films Based on Nonlocal Elasticity

We perform a linear analysis of the elastic fields and stability of epitaxially strained thin films based on nonlocal elasticity. We derive expressions of perturbed stresses to the first order of perturbation amplitude, which show that the stresses are directly proportional to the lattice mismatch and the perturbation amplitude, and decrease with an increase in the perturbation wavelength. The critical perturbation wavelength distinguishes whether the flat film for the perturbation is stable, which is inversely proportional to the square of the mismatch and decreases with the thickness of the film.     

Silicon diffusion through thin tungsten films on silicon,studied with Auger spectroscopy

Silicon out-diffusion through ? 3000 Å tungsten films deposited on silicon by r.f. sputtering was studied using Auger spectroscopy. Silicon first diffuses to the tungsten film surface by grain boundary diffusion and surface migration. The out-diffusion kinetics were most strongly dependent on the thickness of the silicon dioxide layer between tungsten and silicon, and this (native) oxide thickness varied with substrate doping. The out-diffusion rate was independent of tungsten film thickness at 540 Å and 2400 Å. For substrates from which the native oxide was removed by backsputtering just prior to tungsten deposition, no Si out-diffusion to the W film surface was observed until almost the entire film had converted to WSi².     

Diffusion coefficients of vacancies and interstitials along tilt grain boundaries in molybdenum

The diffusion coefficients of vacancies and interstitials along symmetrical tilt grain boundaries in molybdenum have been calculated using the molecular dynamics method. The migration energies of defects have been obtained. The activation energy and coefficients of grain boundary self-diffusion have been deter-mined. A comparison of the obtained results with the studies of other authors indicates that boundaries formed between particles in the powder in sintering experiments have a higher diffusion activity as compared to stable grain boundaries in polycrystals.     

Grains,growth, and grooving

We report the in situ investigation of grain growth and grain boundary migration, performed with a variable-temperature scanning tunneling microscope (STM) on a polycrystalline gold film. Atomic step resolution allowed us to identify the individual grains and, thus, also the grain boundaries. Our special, thermal-drift-compensated STM design made it possible to follow the same sample area over large temperature intervals. In this way, we have directly observed grain boundary migration and grain growth. In a first quantitative analysis we correlate the observed, unexpected changes in surface roughness with the evolution of the grain and grain boundary configuration.     

Surface effects and diffusive phase transition in ferroelectric thin films: A self-consistent approach

A self-consistent Landau phenomenological approach has been used to study the ferroelectric transition in films in the presence of various surface effects such as depolarization and strain. The polarization distribution of the film is computed and its variation with respect to temperature, thickness and strain is determined. The gradual decrease in polarization across the transition shows the diffusive behavior which is confirmed from the soft mode and the dielectric susceptibility analysis. The critical thickness below which ferroelectricity disappears is also computed. The degree of diffuseness in the transition is obtained from the susceptibility exponent which shows more and more diffusive behavior for smaller and smaller film thickness.     

Effect of thickness on the stability of transparent conducting impurity‐doped ZnO thin films in a high humidity environment

The resistivity of transparent conducting Al‐ and Ga‐doped ZnO (AZO and GZO) thin films prepared with a thickness in the range from 20 to 200 nm on glass substrates at a temperature below 200 °C was found to increase with exposure time when tested in a high humidity environment (air at 90% relative humidity and 60 °C). The resistivity stability (resistivity increase) was considerably affected by the thin film thickness. In particular, thin films with a thickness below about 50 nm were very unstable. The increase in resistivity is interpreted as carrier transport being dominated by grain boundary scattering resulting from the trapping of free electrons due to oxygen adsorption on the grain boundary surface. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of electromechanical boundary conditions on the properties of epitaxial ferroelectric thin films

The effects of internal stresses and depolarization fields on the properties of epitaxial ferroelectric perovskite thin films are discussed by employing the dynamic Ginzburg-Landau equation (DGLE). The numerical solution for BaTiO₃ film shows that internal stress and the depolarization field have the most effects on ferroelectric properties such as polarization, Curie temperature and susceptibility. With the increase of the thickness of the film, the polarization of epitaxial ferroelectric thin film is enhanced rapidly under high internal compressively stress. With the thickness exceeding the critical thickness for dislocation formation, the polarization increases slowly and even weakens due to relaxed internal stresses and a weak electrical boundary condition. This indicates that the effects of mechanical and electrical boundary conditions both diminish for ferroelectric thick films. Consequently, our thermodynamic method is a full scale model that can predict the properties of ferroelectric perovskite films in a wide range of film thickness.     

Effects of low-energy ion beam action on Ge/Si heteroepitaxy from molecular beam

The evolution of the surface morphology of a pseudomorphic Ge film on Si upon irradiation with its low-energy (230 eV) ions during heteroepitaxy from molecular beam has been studied experimentally by reflection high-energy electron diffraction. It has been found that irradiation with a continuous ion beam leads to a decrease in the critical Ge film thickness at which a transition from two-dimensional layer-by-layer to three-dimensional growth takes place. Exposure to pulsed ion irradiation (0.5 s) at instants of time that correspond to a fractional surface coverage more than 0.5 enhances the reflection intensity, which corresponds to a decrease in the roughness of the growth surface.     

Influence of coherent nanoinclusions on stress-driven migration of low-angle grain boundaries in nanocomposites

A theoretical model that effectively describes stress-driven migration of low-angle tilt grain boundaries in nanocomposites with nanocrystalline or ultrafine-grained metallic matrices containing ensembles of coherent nanoinclusions has been developed. Within this model, low-angle tilt boundaries have been considered as walls of edge dislocations that, under the influence of stress, slip in the metallic matrix and can penetrate into nanoinclusions. The dislocation dynamics simulation has revealed three main regimes of the stress-driven migration of low-angle grain boundaries. In the first regime, migrating grain boundaries are completely retarded by nanoinclusions and their migration is quickly terminated, while dislocations forming grain boundaries reach equilibrium positions. In the second regime, some segments of the migrating grain boundaries are pinned by nanoinclusions, whereas the other segments continue to migrate over long distances. In the third regime, all segments of grain boundaries (except for the segments located at the boundaries of inclusions) migrate over long distances. The characteristics of these regimes have been investigated, and the critical shear stresses for transitions between the regimes have been calculated.     

Glass transitions and dynamics in thin polymer films: dielectric relaxation of thin films of polystyrene

The glass transition temperature T(g) and the temperature T(alpha) corresponding to the peak in the dielectric loss due to the alpha process have been simultaneously determined as functions of film thickness d through dielectric measurements for polystyrene thin films supported on glass substrate. The dielectric loss peaks have also been investigated as functions of frequency for a given temperature. A decrease in T(g) was observed with decreasing film thickness, while T(alpha) was found to remain almost constant for d>d(c) and to decrease drastically with decreasing d for d相似文献   

Critical current of YBa(2)Cu(3)O(7-delta) low-angle grain boundaries

Transport critical current measurements have been performed on 5 degrees [001]-tilt thin film YBa(2)Cu(3)O(7-delta) single grain boundaries with the magnetic field rotated in the plane of the film, phi. The variation of the critical current has been determined as a function of the angle between the magnetic field and the grain boundary plane. In applied fields above 1 T the critical current j(c) is found to be strongly suppressed only when the magnetic field is within an angle phi(k) of the grain boundary. Outside this angular range the behavior of the artificial grain boundary is dominated by the critical current of the grains. We show that the phi dependence of j(c) in the suppressed region is well described by a flux cutting model.     

Structural phase transition in the mixed state of superconducting films in a parallel magnetic field

A thin film of a second-kind superconductor in a magnetic field parallel to the surface of the film is considered in the London approximation. It has been shown that if bulk pinning is absent and the suppression of super-conductivity by the magnetic field is negligible, the splitting of a vortex chain in the film occurs as a structural phase transition either of the first or second order, depending on the ratio of the thickness of the film d to the penetration depth of the magnetic field λ. The ratio d/λ, and thereby the character of the transition in the vortex lattice, can be changed by varying the temperature. The corresponding critical thicknesses of films and field ranges in which this effect can be observed experimentally have been calculated.     

On the dependence of surface undulation on film thickness

This paper investigates the dependence of surface undulation on a film thickness considerably greater than the critical value of a thin film system. It considers that surface tension and residual stress are the main cause of surface undulation. The study found that there is a critical undulation wavelength that minimizes the free energy of a thin film system, that this critical wavelength depends on the film thickness, and the effect of undulation amplitude is insignificant. The research also found that the surface undulation has a negligible influence on the residual stresses in the thin film system.     

Elastic-plastic analyses on the residual stresses and curvature of the film/substrate bilayer system

During thermal cycling, the residual stresses are often generated in the film/substrate bilayer due to the material mismatch between the substrate and the film. If the thickness of the film is relatively high, the thermal residual stresses in it may be of different signs. When the film is subjected to elastic-plastic deformation, two plastic zones with different thicknesses may be generated in the film at a significantly high temperature difference. In this paper, a theoretical model which reflects the complete history of thermal residual stresses and curvatures in the elastoplastic film/substrate bilayer system is developed. Solutions are derived to estimate the residual stresses and curvature in the film as functions of temperature difference. The case of Al/Si system is used to illustrate the implementation of this model. Results show that the critical temperature difference at which the second plastic zone near the film surface is generated near the Al film surface is dependent on the film thickness. The strain hardening of the film has an obvious influence on the magnitude of residual stresses within the film at high temperature difference.     

Influence of thickness and permeability of endothelial surface layer on transmission of shear stress in capillaries

The molecular coating on the surface of microvascular endothelium has been identified as a barrier to transvascular exchange of solutes. With a thickness of hundreds of nanometers, this endothelial surface layer(ESL) has been treated as a porous domain within which fluid shear stresses are dissipated and transmitted to the solid matrix to initiate mechanotransduction events. The present study aims to examine the effects of the ESL thickness and permeability on the transmission of shear stress throughout the ESL. Our results indicate that fluid shear stresses rapidly decrease to insignificant levels within a thin transition layer near the outer boundary of the ESL with a thickness on the order of ten nanometers. The thickness of the transition zone between free fluid and the porous layer was found to be proportional to the square root of the Darcy permeability. As the permeability is reduced ten-fold, the interfacial fluid and solid matrix shear stress gradients increase exponentially two-fold. While the interfacial fluid shear stress is positively related to the ESL thickness, the transmitted matrix stress is reduced by about 50% as the ESL thickness is decreased from 500 to 100 nm, which may occur under pathological conditions. Thus, thickness and permeability of the ESL are two main factors that determine flow features and the apportionment of shear stresses between the fluid and solid phases of the ESL. These results may shed light on the mechanisms of force transmission through the ESL and the pathological events caused by alterations in thickness and permeability of the ESL.