Free carrier concentration and conductivity in chlorine doped lead telluride

Plasma resonance in the IR reflection spectra is used to measure the concentration and relaxation time of free charge carriers along with the conductivity in PbTe_{1 − x} Cl _x solid solutions. It is found that with increasing the chlorine concentration, the electron concentration and conductivity increase and reach saturation at x = 0.03 (n = 5.5 × 10¹⁹ cm⁻³, σ = 3750 Ohm⁻¹ · cm⁻¹). The relaxation time decreases with increasing the chlorine concentration and reaches the minimum value of 2.2 × 10⁻¹⁴ s at x = 0.03; then, it almost does not change.     

Experimental and computational study of the passage of an electron beam through the curvilinear element of the Drakon stellarator system in a tenuous plasma

Results are presented from the first stage of studies on the passage of an electron beam with energy 100–500 eV in a magnetic field of 300–700 Oe through the curvilinear solenoid of the KRéL unit, the latter being a prototype of the closing segment of the Drakon stellarator system, in the plasma-beam discharge regime. The ion density at the end of the curvilinear part of the chamber, n _i ≈8×10⁸–10¹⁰ cm⁻³, the electron temperature T _e ≈4–15 eV, and the positions at which the beam hits the target for different distances from it to the electron source are determined experimentally. The motion of the electron beam is computationally modeled with allowance for the space charge created by the beam and the secondary plasma. From a comparison of the experimentally measured trajectories and trajectories calculated for different values of the space charge, we have obtained an estimate for the unneutralized ion density of the order of 5×10⁷ cm⁻³. Zh. Tekh. Fiz. 69, 22–26 (February 1999)     

Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ − SR method

The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×10¹³ cm⁻³) and antimony (Sb: 2×10¹⁸ cm⁻³) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center _μ A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998)     

Emission of axions by a hydrogen-like atom in an ultrastrong magnetic field

The resonance effect of emission of axions by a hydrogen-like atom in an ultrastrong magnetic field B ≫ B ₀ = m ²/e = 4.41 × 10¹³ Gs, which is induced by polarization of electron-positron vacuum, is considered. The emission probability and the radiation intensity are on the order of (B/B ₀) × 10⁻¹² of electromagnetic radiation characteristics, which exceeds the conventional ratio by many orders of magnitude. It is shown that, at the temperature of early Universe ≲(Zα)² m, the contribution from the resonance mechanism prevails. However, the relation between the concentrations of relic photons and axions cannot explain the origin of cold dark matter. The axion energy density in “our epoch” is 10⁻⁴(B/B ₀) eV/cm³.     

Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures

The electroluminescent characteristics of an InGaAsSb/GaAlAsSb heterostructure LED emitting at 1.85 μm are studied in the temperature range 20–200°C. It is shown that the emission power exponentially drops as P ≅ 0.4exp(2.05 × 10³/T) with a rise in temperature primarily because of an increase in the Auger recombination rate. It is found that band-to-band radiative recombination goes in parallel with recombination through acceptor levels, the latter causing the emission spectrum to broaden. With a rise in temperature, the activation energy of the acceptor levels decreases by the law ΔE≅ 32.9 − 0.075T and the maximum of the LED’s emission spectrum shifts toward the long-wavelength range (hν _max = 0.693 − 4.497 × 10⁻⁴ T). Based on the dependence E _g = hν _max − 0.5kT and experimental data, an expression is derived for the temperature variation of the bandgap in the In_0.055Ga_0.945AsSb active area, E _g ≅ 0.817 − 4.951 × 10⁻⁴ T, in the range 290 K < T < 495 K. The resistance of the heterostructure decreases exponentially with rising temperature as R ₀ ≅ 5.52 × 10⁻²exp(0.672/2kT), while cutoff voltage U _cut characterizing the barrier height of a p−n junction decreases linearly with increasing temperature (U _cut = −1.59T + 534). It is found that the current through the heterostructure is due to the generation-recombination mechanism throughout the temperature interval.     

Spin-spin interaction of Ni2+ ions in ZnSiF6·6H2O

The angular dependences of the electron spin resonance spectrum of 1% Ni²⁺ ions in a ZnSiF₆·6H₂O matrix are investigated experimentally at 36 GHz and 4.2 K. Besides the main spectrum of the isolated ion, we observed a spectrum due to interacting pairs of Ni²⁺ ions, located in the first (nn) and second (2n) coordination spheres and coupled by, besides the magnetic dipole-dipole interaction, isotropic exchange: J _nn = (−197±1)×10⁻⁴, J _2nα = (−5±1)×10⁻⁴, and J _2nβ = (3±2)×10⁻⁴ cm⁻¹. Lines due to other isolated Ni²⁺ ions, which have a different initial splitting D, are also present in the spectrum with intensity comparable to the pair spectrum. Low-symmetry distortions of the crystal field are observed, caused by a pair of impurity ions located close to one another. It is shown that the previously proposed interpretation is incorrect. Fiz. Tverd. Tela (St. Petersburg) 41, 1602–1608 (September 1999)     

Raman-gain, linewidth, and effective g -value with spin-flip-Raman scattering in inSb

In this paper we report on measurements of spin-flip-Raman gain inn-InSb as a function of the magnetic field. The measurements were carried out at temperatures of 1.8 K and 4.2 K and at a carrier concentration of 1.35×10¹⁵ cm⁻³. The Raman cross sections obtained from these results, e.g. 1.25×10⁻²⁰ cm²/sr at a magnetic field of 10 kG and a pump frequency of 1884.35 cm⁻¹, agree very well with those theoretically predicted by Wherrett and Wolland. Furthermore, these measurements yield line shapes and linewidths of the spontaneous scattering (100–1500 MHz) and allow the determination of the effectiveg-value with an accuracy known from ESR-investigations. These results are discussed in terms of already published theoretical investigations.     

Near IR laser light visualizators using nonlinear GaSe and other layered crystallites

Two methods of preparation of the devices for visualization of pulsed and continuous near-IR (near infrared) are described and the results of conversion of pulsed and continuous IR (800–1360 nm) laser radiation into the visible range of spectra (400–680 nm) by using a transparent substrate covered with the particles (including nanoparticles) of effective nonlinear materials of GaSe _x S_{1 − x} (0.2 ≤ x ≤ 0.8) are presented. Converted light can be detected in transmission or reflection geometry as a visible spot corresponding to the real size of the incident laser beam. Developed device structures can be used for checking if the laser is working or not, for optical adjustment, for visualization of distribution of laser radiation over the cross of the beam and for investigation of the content of the laser radiation. Low energy (power density) limit for visualization of the IR laser pulses with 2–3 ps duration for these device structures are: between 4.6–2.1 μJ (3 × 10⁻⁴−1 × 10⁻⁴ W/cm²) at 1200 nm; between 8.4–2.6 μJ (4.7 × 10⁻⁴−1.5 × 10⁻⁴ W/cm²) at 1300 nm; between 14.4–8.1 μJ (8.2 × 10⁻⁴–4.6 × 10⁻⁴ W/cm²) at 1360 nm. Threshold damage density is more than 10 MW/cm² at λ = 1060 nm, pulse duration τ = 35 ps. The results are compared with commercially existing laser light visualizators.     

Thermo-optic coefficients of monoclinic KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

The three thermo-optic coefficients of the biaxial laser host KLu(WO₄)₂ are measured at 633 nm by a deflection method. Their values at 300 K amount to ∂ n _g /∂ T=−7.4×10⁻⁶ K⁻¹; ∂ n _m /∂ T=−1.6×10⁻⁶ K⁻¹ and ∂ n _p /∂ T=−10.8×10⁻⁶ K⁻¹. Nearly athermal propagation directions are found for polarizations along the N _m and N _p dielectric axes.     

Quantum oscillations of the resistivity and hall coefficient and the quantum limit in Bi<Subscript>0.93</Subscript>Sb<Subscript>0.07</Subscript> alloys in a magnetic field along the trigonal axis

The dependences of the electrical resistivity ρ and the Hall coefficient R on the magnetic field have been measured for single-crystal samples of the n-Bi_0.93Sb_0.07 semiconductor alloys with electron concentrations in the range 1 × 10¹⁶ cm⁻³ < n < 2 × 10¹⁸ cm⁻³. It has been found that the measured dependences exhibit Shubnikov-de Haas quantum oscillations. The magnetic fields corresponding to the maxima of the quantum oscillations of the electrical resistivity are in good agreement with the calculated values of the magnetic fields in which the Landau quantum level with the number N intersects the Fermi level. The quantum oscillations of the Hall coefficient with small numbers are characterized by a significant spin splitting. In a magnetic field directed along the trigonal axis, the quantum oscillations of the resistivity ρ and the Hall coefficient R are associated with electrons of the three-valley semiconductor and are in phase with the magnetic field. In the case of a magnetic field directed parallel to the binary axis, the quantum oscillations associated both with electrons of the secondary ellipsoids in weaker magnetic fields and with electrons of the main ellipsoid in strong magnetic fields (after the overflow of electrons from the secondary ellipsoids to the main ellipsoid) are also in phase. In magnetic fields of the quantum limit ħω _c /2 ≥ E _F, the electrical conductivity increases with an increase in the magnetic field: σ₂₂(H) ∼ H ^k . A theoretical evaluation of the exponent in this expression for a nonparabolic semiconductor leads to values of k close to the experimental values in the range 4 ≤ k ≤ 4.6, which were obtained for samples of the semiconductor alloys with different electron concentrations. A further increase in the magnetic field results in a decrease of the exponent k and in the transition to the inequality σ₂₂(H) ≤ σ₂₁(H).     

Trap-centers of self-interstitials in silicon

Deep-level profiles were measured radially acrossn-type FZ silicon wafers containing A-swirl defects by applying DLTS to an array of Schottky contacts. The trapparameters were obtained very accurately using a computer-fit procedure for the full DLTS peaks. Two acceptor levels atE _c −0.49 eV (σ _n =6.6×10⁻¹⁶cm²) andE _c −0.07 eV (σ _n =4.6×10⁻¹⁶cm²) were observed, which varied oppositely to the A-swirl defect density. At short ranges (1–2mm) the trap concentration-profile was smeared out and did not follow the strong fluctuations in the etch pattern. Both levels were measured together with the same concentration. The profiles indicate outdiffusion. A level atE _c −0.14 eV (σ _n =1.1×10⁻¹⁶cm²) was not related to A-swirl defects. A level atE _c −0.11 eV (σ _n =1.1×10⁻¹⁵cm²) was only detected in one ingot. The properties of the deep level atE _c −0.49 eV are discussed in the light of published DLTS results reported for γ-irradiation, laser annealing after self-implantation, annealing under pressure and oxidation of silicon samples. It is concluded, that this level is related to interstitial silicon rather than to an impurity.     

Effects of linking chain length and magnetic field on the kinetics of photoprocesses in covalently bonded porphyrin—viologen dyads

The formation and decay kinetics of chain linked triplet radical pairs derived from photo-induced electron transfer reactions in a series of 21 zinc porphyrin-flexible spacer-viologen (ZnP-Sp _n -Vi²⁺) dyads containing 2–138 atoms (n) in the spacer, have been examined by nanosecond laser flash photolysis techniques in an external magnetic field. In non-viscous polar solvents (acetone and CHCl₃ plus CH₃OH = 1:1 v/v), the effect of the spacer length on the rate constant of forward electron transfer can be described by the equation: k _et = k ⁰ _et(n + 6)^?1.5, with k ⁰ _et = 3 × 10¹⁰ s^?1 and 1.2 × 10¹⁰ s^?1 for electron transfer from the singlet and triplet states of ZnP, respectively. In zero magnetic field, the value of the triplet radical pair recombination rate constant, k _r(0) = 0.7 × 10⁶-8 × 10⁶ s^?1, is significantly smaller than k _et. The dependence of k _r(0) on n has an extremum with the maximum near n = 20. In a strong magnetic field (B = 0.21 T), significant retardation of triplet radical pair recombination is observed. In strong magnetic fields the effect of the chain length on triplet radical pair recombination rates is rather small and k _r(B) may vary in the range 0.3 × 10⁶-1 × 10⁷ s^?1. The phenomena observed are discussed in terms of the interplay of molecular and spin dynamics in the limits of slow and fast encounters, taking into account the exchange-interaction.     

Nuclear Spin-Lattice Relaxation of 82BrFe

The field dependence of the nuclear spin-lattice relaxation (SLR) of cold implanted ⁸²Br (T ≤ 25 mK) in α-Fe single crystals was investigated with nuclear magnetic resonance of oriented nuclei (NMR/ON) at low temperatures as experimental technique. The SLR at the lattice sites with the hyperfine fields found by earlier NMR/ON experiments was measured as a function of the applied external magnetic field B _ext parallel to the three principle axes [100], [110] and [111] of the iron single crystal. The data were evaluated with the full relaxation formalism in the single impurity limit and for comparison also with the often employed model of a single exponential function with an effective relaxation time T ₁′. With a phenomenological model the high field values of the relaxation rates r _{∞, [100]′} = 6.6(2) · 10⁻¹⁵ T²sK⁻¹, r _{∞, [110]} = 5.4(2) · 10⁻¹⁵ T²sK⁻¹ and r _{∞, [111]} = 5.2(1) · 10⁻¹⁵ T²sK⁻¹ were obtained.     

Structure,thermal properties,conductivity and electrochemical stability of di-urethanesil hybrids doped with LiCF<Subscript>3</Subscript>SO<Subscript>3</Subscript>

Variable chain length di-urethane cross-linked poly(oxyethylene) (POE)/siloxane hybrid networks were prepared by application of a sol-gel strategy. These materials, designated as di-urethanesils (represented as d-Ut(Y′), where Y′ indicates the average molecular weight of the polymer segment), were doped with lithium triflate (LiCF₃SO₃). The two host hybrid matrices used, d-Ut(300) and d-Ut(600), incorporate POE chains with approximately 6 and 13 (OCH₂CH₂) repeat units, respectively. All the samples studied, with compositions ∞ > n ≥ 1 (where n is the molar ratio of (OCH₂CH₂) repeat units per Li⁺), are entirely amorphous. The di-urethanesils are thermally stable up to at least 200 °C. At room temperature the conductivity maxima of the d-Ut(300)- and d-Ut(600)-based di-urethanesil families are located at n = 1 (approximately 2.0 × 10⁻⁶ and 7.4 × 10⁻⁵ Scm⁻¹, respectively). At about 100 °C, both these samples also exhibit the highest conductivity of the two electrolyte systems (approximately 1.6 × 10⁻⁴ and 1.0 × 10⁻³ Scm⁻¹, respectively). The d-Ut(600)-based xerogel with n = 1 displays excellent redox stability.     

Low-temperature mobility of surface electrons and ripplon-phonon interaction in liquid helium

The low-temperature dc mobility of the two-dimensional electron system localized above the surface of superfluid helium is determined by the slowest stage of the longitudinal momentum transfer to the bulk liquid, namely, by the interaction between the surface and volume excitations of liquid helium, which decreases rapidly with the temperature. Thus, the temperature dependence of the low-frequency mobility is μ_dc ≈ 8.4 × 10⁻¹¹ n _e T ^−20/3 cm⁴ K^20/3/(V s), where n _e is the surface electron density. The relation T ^20/3 E_⊥⁻³ ≪ 2 × 10⁻⁷ between the pressing electric field (in kilovolts per centimeter) and temperature (in Kelvins) and the value ω ≲ 10⁸ T ⁵ K⁻⁵ s⁻¹ of the driving-field frequency have been obtained, at which the above effect can be observed. In particular, E _⊥ ≃ 1 kV/cm corresponds to T ≲ 70 mK and ω/2π ≲ 30 Hz.     

Magnetically stabilized electron-hole liquid in indium antimonide

Luminescence spectra of sufficiently pure n-type indium antimonide crystals (N _D−N _A=(1–22)·10¹⁴ cm⁻³) in a magnetic field of up to 56 kOe, at temperatures of 1.8–2 K, and high optical pumping densities (more than 100 W/cm²) have been studied. More evidence of the existence of electron-hole liquid stabilized by magnetic field has been obtained, and its basic thermodynamic parameters as functions of magnetic field have been measured. When the magnetic field increases from 23 to 55.2 kOe, the liquid density increases from 3.2·10¹⁵ to 6.7·10¹⁵ cm⁻³, the binding energy per electron-hole pair rises from 3.0 to 5.2 meV, and the binding energy with respect to the ground exciton level (work function of an exciton in the liquid) rises from 0.43 to 1.2 meV. Zh. éksp. Teor. Fiz. 111, 737–758 (February 1997)     

In-plane propagation of millimeter waves in periodic magnetoactive semiconductor structures

Non-transmission bands of electromagnetic waves propagating along the layers in periodic structures are studied in the steady magnetic field perpendicular both to the uniaxis and the direction of propagation. The band control range (36÷75 GHz) inn-InSb/Al₂O₃ structures with the carrier densities 4 10¹³ ≤n ≤ 8 10¹⁴ cm⁻³ in magnetic fieldsB _o ≤ 2 T at temperatures 77 ≤T ≤ 200 K is found to agree with the calculated in the effective medium approximation. Attenuation down to −50 dB within the band is observed. The band lineshape is found to indicate additional effects related to the finite layer thickness and periodicity termination predicted by a more rigorous theory of dispersion.     

Magnetostriction of Fe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>S (<Emphasis Type="Italic">x</Emphasis> = 0.27) crystals

The magnetostriction of Fe _x Mn_{1 − x} S (x = 0.27) single crystals in strong magnetic fields up to 120 kOe has been investigated. It has been found that the magnetostriction reaches colossal values (±3 × 10⁻⁴) atypical of compounds of 3d elements. It has been found that the magnetostriction changes sign when varying temperature and magnetic field; this behavior indicates an important role of the spin-phonon interactions in the formation of the magnetic order in solid solutions of iron-manganese sulfides.     

The nonlinear optical property and photoinduced anisotropy of?a?novel azobenzene-containing fluorinated polyimide

A novel azobenzene-containing fluorinated polyimide was synthesized. The nonlinear optical property and photoinduced birefringence of a polyimide thin film were investigated. Large third-order nonlinear refraction (n ₂=−4.49×10⁻¹¹ cm²/W) was observed in the polyimide thin film by carrying out Z-scan measurement. The polyimide thin film exhibited larger nonlinear refraction than that of a mono-azo dye doped PMMA thin film (n ₂=−1.63×10⁻¹² cm²/W). The photoinduced birefringence of the polyimide thin film (▵ n∼10⁻²) under different pump intensities was investigated; it was much larger than that of the mono-azo dye doped PMMA thin film (▵ n∼10⁻³). Moreover, the time constants for birefringence growth and relaxation processes were determined.     

Sub-THz radiation room temperature sensitivity of long-channel silicon field effect transistors

Room temperature operating n-MOSFETs (n-type metal-oxide silicon field effect transistors) used for registration of sub-THz (sub-terahertz) radiation in the frequency range ν = 53−145 GHz are considered. n-MOSFETs were manufactured by 1-μm Si CMOS technology applied to epitaxial Si-layers (d ≈15 μm) deposited on thick Si substrates (d = 640 μm). It was shown that for transistors with the channel width to length ratio W/L = 20/3 μm without any special antennas used for radiation input, the noise equivalent power (NEP) for radiation frequency ν ≈76 GHz can reach NEP ∼6×10⁻¹⁰ W/Hz^1/2. With estimated frequency dependent antenna effective area S_est for contact wires considered as antennas, the estimated possible noise equivalent power NEP_pos for n-MOSFET structures themselves can be from ∼15 to ∼10³ times better in the specral range of ν ∼55–78 GHz reaching NEP_pos ≈10⁻¹² W/Hz^1/2.