共查询到18条相似文献,搜索用时 171 毫秒
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在高温高压条件下,用hBN-LiH和hBN-Li3N-B为初始材料均可以合成出黑色cBN晶体。拉曼光谱测试结果表明,cBN晶体颜色变黑的原因是晶体中多余B原子的存在造成的。在hBN-Li3N-B体系中,晶体内部有明显的三角形阴影形成,表明从晶体表面的中心到顶角间B原子的含量较多,从表面中心到棱边B原子的含量逐渐减少。而在hBN-LiH体系中所得到的晶体颜色从黑色透明直接变成黑色不透明状态,晶体内部没有出现三角形阴影,表明晶体中作为杂质的B原子分布比较均匀。此两种情况说明,B作为杂质原子进入cBN晶体中可以有两种分布情况,一是居中对称分布,二是均匀分布,从晶体的生长环境和自身的排杂能力方面分析了晶体为什么会出现上述现象。 相似文献
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引入调节剂是一种改善立方氮化硼生长环境的重要手段. 本文中,我们研究了在Li3NhBN体系中引入调节剂对合成立方氮化硼的影响. 研究发现,调节剂的引入对立方氮化硼成核有明显的影响,并且通过光学显微镜可以明显发现调节剂曾有溶融的迹象,认为是调节剂在高温高压下发生溶解,改变了立方氮化硼生长溶液的性质,为立方氮化硼的生长提供了良好的生长环境,改变了立方氮化硼的生长速度,使晶体形貌得到了明显的改善. 通过电镜分析,发现调节剂含量的不同给晶体带来了不同的缺陷. 相似文献
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氮化硅在常态下的两种已知物相(α和β相)均为六方结构,最近新发现第3种具有立方尖晶石结构的氮化硅(以下称立方氮化硅或γ-Si3N4)可通过高温高压条件合成得到,是继金刚石、立方氮化硼之后的又一种超硬材料。各国学者在合成立方氮化硅的研究中开展了积极的工作,然而,目前所用的技术手段仅能合成出极少量的γ-Si3N4粉体样品,无法进一步开展其块体材料的研究,并制约了该新材料在工业技术中的应用。 相似文献
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以X射线衍射分析作参比,分析了高度三维有序到近乱层结构的9种六方氮化硼的红外和拉曼光谱,并进行了立方氮化硼的高温高压合成。光谱分析表明,随着晶性的降低,六方氮化硼的低频红外吸收峰的位置及拉曼谱线等基本振动光谱发生明显的特征性的变化,并伴随出现各自不同的次级光谱结构。合成结果表明,在触媒作用下,立方氮化硼的形成需要六方氮化硼原料有一定的结晶度,但立方氮化硼合成效果与六方氮化硼结晶度并非是简单的单调关系。对振动光谱和合成试验的结果进行了讨论。 相似文献
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较系统地研究了不同衬底材料对制备氮化硼薄膜的影响。用热丝增强射频等离子体CVD法,以NH3,B2H6和H2为反应气体,在Si,Ni,Co和不锈钢等衬底材料上,成功生长出高质量的立方氮化硼薄膜,还用13.56MHz的射频溅射系统将c-BN薄膜沉积在Si衬底上,靶材为h-BN(纯度为99.99%),溅射气体为氩气和氮气的混合气体,所得到的氮化硼薄膜中立方相含量高于90%,用X射线衍射谱和傅里叶变换红谱对样品进行了分析表明,衬底材料与c-BN的晶格匹配情况,对于CVD生长立方氮化硼薄膜影响很大,而对溅射生长立方氮化硼薄膜影响不大。 相似文献
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Abstract Transformation kinetics from hBN to cBN has been studied at 6 GPa with changing reaction temperature and content of catalyst mixed with hBN powder. At lower catalyst content (3–10 wt %), rate of transformation was extraordinary rapid between 1300 and 1350 C. At higher catalyst content (30–50 wt %), rate of transformation was decreased. Normal nucleation kinetics was observed at about 1500 C. The rapid transformation temperature region correlates characteristic behavior of the sintering process. 相似文献
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Qingping Dou Haitao Ma Gang Jia Zhanguo Chen Kun Cao Tiechen Zhang 《Optics & Laser Technology》2007,39(3):647-651
The cubic boron nitride (cBN) is a kind of artificial electro-optic (EO) crystal, and we have not found any relative reports so far. Because the artificial synthetic cBN wafers are very small and hard, the wafers cannot be cut into rectangular slabs. The polarizer-sample-λ/4 retardation plate (compensator)-analyzer (PSCA) transverse EO modulator has to be adjusted to the minute irregular octahedron of cBN wafers. When the applied voltage is along [1 1 1] direction of the wafer, due to refraction, the angle between the incident beam direction and the (1 1 1) plane (top or bottom plane) of the wafer should be 25.4°, and the angle between the polarization direction of the polarizer and the plane of incidence should be 50.8° by calculation, respectively. The half-wave voltage of the cBN sample was obtained for the first time, by means of detection of the output optic signals from the modulator with and without an applied electric field on the sample, respectively. Furthermore, the linear EO coefficient was obtained, . The analysis of the experimental resulting error was carried out. 相似文献
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A new structural phase of MgV2O6 was obtained by a high-pressure,high-temperature(HPHT) synthesis method.The new phase was investigated by the Rietveld analysis of X-ray powder diffraction data,showing space group Pbcn(No.60) symmetry and a = 13.6113(6) (1 = 0.1 nm),b = 5.5809(1) ,c = 4.8566(3) ,V = 368.93(2) 3(Z = 4).High pressure behavior was studied by Raman spectroscopy at room temperature.Under 22.5 GPa,there was no sign of a structural phase transition in the spectra,demonstrating stability of the HPHT phase up to the highest pressure. 相似文献
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描述了碳硅石压腔的结构和特点。碳硅石压腔主要包括碳硅石压砧、支撑加压系统、加热系统和金属垫片等部分。合成碳硅石的硬度高、热导性好、膨胀系数小、热稳定性好,并且它的晶体颗粒大,透明度好,价格也很便宜,因此是一种很好的压砧材料。还介绍了应用碳硅石压腔对Na2CO3溶液、Na2SO4溶液、水的拉曼光谱进行高温高压原位测量的实例。 相似文献
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Abstract In the pressure range from 0.3 to 1.4 GPa, the onset temperatures of cBN-to-hBN transformation have been found by quenching method on high-purity single crystals of cubic boron nitride. From the experimental data with allowances made for the kinetics of solid-phase transformation. the hBN?cBN equilibrium line has been calculated, which fits well with the equilibrium phase p, T-diagram of boron nitride. 相似文献