PHOTOLUMINESCENCE STUDY OF InAs/GaAs SELF-ORGANIZED QUANTUM DOTS WITH BIMODAL SIZE DISTRIBUTION

We have investigated the temperature dependence of the photoluminescence (PL) spectrum of self-organized InAs/GaAs quantum dots. A distinctive double-peak feature of the PL spectra from quantum dots has been observed, and a bimodal distribution of dot sizes has also been confirmed by scanning tunneling microscopy image for uncapped sample. The power-dependent PL study demonstrates that the distinctive PL emission peaks are associated with the ground-state emission of islands in different size branches. The temperature-dependent PL study shows that the PL quenching temperature for different dot families is different. Due to lacking of the couple between quantum dots, an unusual temperature dependence of the linewidth and peak energy of the dot ensemble photoluminescence has not been observed. In addition, we have tuned the emission wavelength of InAs QDs to 1.3 μm at room temperature.     

Visualization of space charge field effect on excitons in a GaAs quantum dot by near-field optical wavefunction mapping

Near-field photoluminescence (PL) imaging spectroscopy was used to investigate multi-exciton and charged-exciton states confined in a single GaAs interface fluctuation quantum dot. We determined the origin of peaks in the PL spectra by employing a wavefunction mapping technique. We observed distortion of the exciton wavefunction due to the electric field produced by an excess electron at a nearby confined state. Near-field wavefunction mapping was demonstrated to be a powerful tool for visualizing the local environment, which affects the emission properties of quantum dots.     

Temperature dependence of photoluminescence spectra in n-type modulation-doped quantum dot arrays

Temperature dependence of photoluminescence (PL) spectra of an electrostatically prepared modulation-doped quantum dot array is investigated. We report a strong temperature dependence of the enhanced PL near the Fermi energy between 0.4 and 4.2 K under a negative bias condition, where an interconnected quantum dot array is formed. This strong temperature dependence suggests that the Fermi-surface-mediated many-body interaction between a photo-created hole and the electron-gas plays an important role in the observed enhanced PL near the Fermi energy.     

电场调谐InAs单量子点的发光光谱

采用稳态和时间分辨发光光谱,研究了生长在p-i-n二极管结构内的InAs单量子点发光光谱的电场调谐特性.随着电场强度的增加,观察到量子点中激子发光的Stark 效应.通过选择不同波长的激光线激发量子点样品,发现随着电场强度的增加导致量子点发光强度的减弱,这是由于量子点俘获载流子概率的减小所致,而激子寿命的增加源于电场导致激子的Stark效应. 关键词： InAs单量子点 Stark效应 电子-空穴分离     

Splitting and storing excitons in strained coupled self-assembled quantum dots

We present a novel self-assembled quantum dot structure designed to spatially separate and store photo-generated electrons and holes in pairs of strain coupled quantum dots. The spatial separation of electron–hole pairs into quantum dots and strain-induced quantum dots has been investigated and verified by photoluminescence experiments. Results from time-resolved PL demonstrates that at low temperatures (3 K) the electron–hole pair can be stored for several seconds.     

Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer

Room temperature 1.3 μm emitting InAs quantum dots (QDs) covered by an In_0.4Ga_0.6As/GaAs strain reducing layer (SRL) have been fabricated by solid source molecular beam epitaxy (SSMBE) using the Stranski–Krastanov growth mode. The sample used has been investigated by temperature and excitation power dependent photoluminescence (PL), photoluminescence excitation (PLE), and time resolved photoluminescence (TRPL) experiments. Three emission peaks are apparent in the low temperature PL spectrum. We have found, through PLE measurement, a single quantum dot ground state and the corresponding first excited state with relatively large energy spacing. This attribute has been confirmed by TRPL measurements which allow comparison of the dynamics of the ground state with that of the excited states. Optical transitions related to the InGaAs quantum well have been also identified. Over the whole temperature range, the PL intensity is found to exhibit an anomalous increase with increasing temperatures up to 100 K and then followed by a drop by three orders of magnitude. Carrier’s activation energy out of the quantum dots is found to be close to the energy difference between each two subsequent transition energies. PACS 68.65.Ac; 68.65.Hb; 78.67.Hc     

Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots

We have observed an unusual temperature sensitivity of the photoluminescence (PL) peak energy for InAs quantum dots grown on InAs quantum wires (QDOWs) on InP substrate. The net temperature shift of PL wavelength of the QDOWs ranges from 0.8 to −4 Å/°C depending upon the Si doping concentration in the samples. This unusual temperature behavior can be mainly ascribed to the stress amplification in the QDOWs when the thermal strain is transferred from the surrounding InAs wires. This offers an opportunity for realizing quantum dot laser devices with a temperature insensitive lasing wavelength.     

Photoluminescence of charged magneto-excitons in InAs single quantum dots

We calculated the photoluminescence spectra of charged magneto-excitons in single two-dimensional parabolic quantum dots, using an unrestricted Hartree–Fock method. The calculated luminescence spectra explain well the observed red shifts of transition energies of InAs/GaAs single quantum dot by additional electron capture in a dot. The magnetic-field-induced transition of the ground state configuration of trapped electrons causes drastic change in the photoluminescence spectra. The dependence of photoluminescence intensities of charged excitons on the excess energies of photogenerated carriers above the bulk GaAs energy gap is studied phenomenologically, by calculating the steady state electron population probability in a dot.     

Insight into optical properties of strain-free quantum dot pairs

Self-assembled GaAs/AlGaAs quantum dot pairs (QDPs) are grown by molecular beam epitaxy using high temperature droplet epitaxy technique. A typical QDP consists of dual-size quantum dots as observed based on atomic force microscopy image. The average height of quantum dot is 5.7 nm for the large quantum dots and 4.6 nm for the small ones. The average peak-to-peak distance of the two dots is about 75 nm. The optical properties of GaAs QDPs are studied by measuring excitation power-dependent and temperature-dependent photoluminescence. Unique photoluminescence properties have been observed from both excitation power-dependent and temperature-dependent measurements. Excitation power-dependent as well as temperature-dependent PL measurements have suggested lateral exciton transfer in the QDPs.     

InGaAs/GaAs量子链的光学特性研究

研究了InGaAs/GaAs量子链的稳态和瞬态光谱特性,特别是载流子的动力学过程.实验发现荧光寿命有很强的探测能量依赖关系,荧光寿命随发光能量的增加而减小;实验还发现,当激发功率较小时,荧光寿命随激发功率增大而增大,当激发功率足够大时,荧光寿命趋于饱和.这些结果清楚地表明,在量子链结构中,参与发光的载流子之间存在明显的耦合和输运现象,进一步分析表明,这种输运主要是由于载流子沿量子链方向的耦合造成的.发光的偏振特性研究进一步证实了载流子沿量子链方向输运过程. 关键词： InGaAs/GaAs 量子点 量子链     

The effect of the excitation and of the temperature on the photoluminescence circular polarization of AlInAs/AlGaAs quantum dots

In this paper, we present a study of photoluminescence (PL) from AlInAs/AlGaAs quantum dots (QDs) structures grown by molecular beam epitaxy. Specifically, we describe the effects of the temperature and of the excitation density on the photoluminescence circular polarization. We have found that the circular polarization degree depends on temperature. On the other hand, the study of the excitation density dependent circular polarization PL degree shows that the last increases in the case of the sample of weak dot density. However, in the case of large dot density, it is almost constant in the excitation density range from 0.116 W cm⁻² to 9 W cm⁻².     

Optical properties of individual GaAs quantum dots embedded into AlGaAs nanowires

The photoluminescence (PL) spectra of semiconductor structures, namely, Al_0.3Ga_0.7As-based quasi-one-dimensional cylindrical nanowires (nanowhiskers), are measured. The diameter of a typical nanowire is 20–50 nm, and its length was 0.5–1.0 μm. Samples containing one or several GaAs-based quantum dots at the center of the quantum wire are studied. The dot thickness is 2 nm, and the dot diameter is 15–40 nm. Individual nanowhiskers, several nanowhiskers (3–4), and ensembles consisting of many nanowhiskers are studied. The PL spectra are measured for different optical-excitation intensities and in magnetic fields of up to 11 T.     

Temperature dependent growth of InGaN/GaN single quantum well

InGaN/GaN single quantum well (SQW) structures under various InGaN growth temperatures have been grown by metal organic chemical vapor deposition (MOCVD), the surface morphologies and optical properties are investigated. The radius of the typical V-pits on the SQW surface is affected by the InGaN well-temperature, and the surface roughness decreased as the well-temperature reduced. Room-temperature photoluminescence (PL) and cathode luminescence (CL) shows the quantum well and quantum dot (QD)-like localized state light emission of the SQWs grown at 700 and 690 °C, respectively, whereas the samples grown at 670 and 650 °C present hybrid emission peaks. Excitation power dependent PL spectra indicates the QD-like localized state emission dominates at low excitation power and the quantum well emission starts to take over at high excitation power.     

Role of nitrogen and oxygen in emission of Si quantum dots formed by pulse laser

Silicon quantum dots fabricated by nanosecond pulsed laser in nitrogen, oxygen or air atmosphere have enhanced photoluminescence (PL) emission with the stimulated emission observed at about 700 nm. It is difficult to distinguish between the photoluminescence peaks emitted from samples prepared in different atmospheres. The reason for the appearance of similar peaks may be the similar distribution of the localised states in the gap for different samples when silicon dangling bonds of quantum dots are passivated by nitrogen or oxygen. It is revealed that both the kind and the density of passivated bonds on quantum dot surface prepared in oxygen or nitrogen have a strong influence on the enhancement of PL emission.     

基于InAs单量子点的单光子干涉

利用分子束外延生长 InAs 单量子点样品,测量了温度为 5 K 时单量子点的荧光(PL)光谱.采用时间关联光子强度测量(HBT)验证了 PL 光谱具有单光子发射特性.单光子通过马赫曾德尔 (MZ) 干涉仪,验证了单光子自身具有干涉特性.测量了当 MZ 干涉仪两臂偏振方向的夹角改变时对应的单光子干涉及条纹可见度的变化. 关键词： 量子点单光子源 反群聚效应 马赫曾德尔干涉     

Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers.By measuring the exciton decay time as a function of the monitored emission energy at different temperatures,we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 12OK. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results.     

Optical transition pathways in type-II Ga(As)Sb quantum dots

We present results of room temperature photoreflectance (PR) and photoluminescence (PL) measurements of molecular-beam epitaxy (MBE)-grown GaAsSb/GaAs quantum dot structures: one with an In_0.14Ga_0.86As capping quantum well and one without it. PL was used to determine the structures’ ground-state transition energies. This result was employed in an 8-band k·p Hamiltonian to achieve a band structure of the structures, which have different electron confinement. The dot emission energies suggest a large amount of As incorporation into the dots, which is due to enhanced adatom mixing at a higher than normal growth temperature of 510 °C. Our calculations indicate a dot composition of 25-50% Sb gives the best fit to experiment. This uncertainty in composition arises due to the fact that different bowing parameters of the ternary alloy could be applied in the calculations. The theoretical analysis accounts well for the main feature in the PR spectra of both samples.     

Photostability of single-photon emission from a single quantum dot in the 650-nm wavelength band at room temperature

The photoluminescence correlation from a single CdSe nanocrystal under pulsed excitation is studied, and a single photon is realized at wavelength 655 nm at room temperature. The single colloidal CdSe quantum dot is prepared on a SiO₂/silicon surface by a drop-and-drag technique. The long-term stability of the single-photon source is investigated; it is found that the antibunching effect weakens with excitation time, and the reason for the weakening is attributed to photobleaching. The lifetimes of photoluminescence from a single quantum dot are analyzed at different excitation times. By analyzing the probability distribution of on and off times of photoluminescence, the Auger assisted tunneling and Auger assisted photobleaching models are applied to explain the antibunching phenomenon.     

Luminescent silicon nanocrystal dots fabricated by SiCl4/H2 RF plasma-enhanced chemical vapor deposition

Luminescent nanocrystalline Si dots were fabricated directly on thermally grown SiO₂ at 120°C by conventional RF plasma-enhanced chemical vapor deposition using tetrachlorosilane, SiCl₄ and H₂. As-deposited Si dot exhibits photoluminescence (PL) in the visible region, consisting of two broad bands corresponding to photon energies of 1.38 and 1.48 eV. Storage in air enhances PL and shifts the PL peak energy to higher wavelengths for dots of diameter less than 10 nm. Fourier transform attenuated total reflection absorption spectroscopy (FTIR-ATR) study reveals that the spontaneous oxidation proceeds until saturation after 70 h at dot sizes of 3–5 nm. The relationship between PL intensity, blueshift of PL peak energy, and surface termination species during oxidation indicates that these changes are attributed to the increased density of radiative centers at the Si nanocrystal dot/SiO₂ interface and enhancement of the quantum confinement effect.     

Temperature Dependence of Photoluminescence from Single and Ensemble InAs/GaAs Quantum Dots

We investigate the temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots systematically. As temperature increases, the exciton emission peak for single quantum dot shows broadening and redshift. For ensemble quantum dots, however, the exciton emission peak shows narrowing and fast redshift. We use a simple steady-state rate equation model to simulate the experimental data of photoluminescence spectra. It is confirmed that carrier-phonon scattering gives the broadening of the exciton emission peak in single quantum dots while the effects of carrier thermal escape and retrapping play an important role in the narrowing and fast redshift of the exciton emission peak in ensemble quantum dots.