Scanning tunneling optical spectroscopy in mercury cadmium telluride and related compounds

We consider II–VI narrow gap semiconducting alloys: mercury cadmium telluride, Hg_(1−x)Cd_(x)Te (MCT), mercury zinc telluride, Hg_(1−x)Zn_(x)Te (MZT), and mercury zinc selenide, Hg_(1−x)Zn_(x)Se (MZS). MCT is emphasized for actual calculations, but a table of values needed in all calculations is presented. These materials are of interest because of their application to infrared detectors and related devices, and because they are candidates for low gravity crystal growth to improve uniformity. We present new calculations of the scanning tunneling optical spectroscopy (STOS) current from which the local energy gap, a function of x, and hence the stoichiometry (x) can be determined as a function of position with presumably high spatial resolution. The low temperature tunneling current (vs. photon frequency) has a sharper onset at the band gap than the low temperature optical absorption. This sharp onset originates from the rapid increase in the integrated transmission probabilities and is greatly enhanced by large diffusion lengths. Thus, STOS should be a competitive technique, compared to optical absorption, for determining the local stoichiometry, a property that is important for characterizing crystals.     

Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.     

Model of magnetic anisotropy in disordered semimagnetic semiconductors

We propose a model explaining the origin of cubic magnetic anisotropy in disordered semiconductor. We show that the magnetic anisotropy changes with the position of the Fermi energy in the valence band and the level of disorder in the crystal. The method is applied to Pb_1−x−ySn_yMn_xTe and Sn_1−xMn_xTe ferromagnetic semiconductor crystals.     

Optical properties of MgxZn1−xO nanowire photonic crystals

We investigate the optical properties of two-dimensional periodic arrays of well-aligned Mg_xZn_1−xO nanowires, i.e., Mg_xZn_1−xO nanowire photonic crystals. The nanowire photonic crystal can exhibit a photonic band gap in the visible range. As the mole fraction of Mg, x, increases, the edge frequencies of the band gap increase and the band gap size decreases. The characteristics of relative band gap and vacant point defect mode are also studied with varying x. From the finite-difference time-domain simulations, we show that the light extraction from nanowires can be controlled by varying the distance between optically excited nanowires and a waveguide, and the mole fraction of Mg. Controlling the light extraction from nanostructures can be useful in the implementation of nanoscale light emitting devices.     

Optical and vibrational properties of CdxHg1-x-y ZnyTe solid solutions

The lattice dynamics of Cd_xHg_1-x-y Zn_yTe solid solutions is studied theoretically and experimentally. The frequencies of the basic optical phonons of Cd_xHg_1-x-y Zn_yTe are calculated in terms of a modified random-element isodisplacement model. As a result, all basic vibrations of the crystal lattice that substantially affect the optical properties of this material in the spectral region corresponding to one-phonon resonance are identified. The optical properties of epitaxial Cd_xHg_1-x-y Zn_yTe layers grown by liquid-phase epitaxy on Cd_1-x Zn_xTe substrates are studied. The calculated and experimental spectral dependences of the dielectric function of Cd_xHg_1-x-y Zn_yTe solid solutions of various compositions are compared at 295 and 78 K, and good agreement between them is reached. The additional lattice vibrations whose frequencies in the phonon density of states are lower than that of the HgTe mode are shown to be caused by the lattice defects of the Cd_xHg_1-x-y Zn_yTe solid solutions.     

First-principles study of the structural,electronic and optical properties of the cubic triangular quaternary ZnxCdyHg1-x-yTe alloys under hydrostatic pressure

In the present computational study, we have explored the structural, electronic and optical properties of ZnTe, CdTe and HgTe binary compounds and their ternary alloys Zn_xCd_1-xTe, Zn_xHg_1-xTe and Cd_xHg_1-xTe as well as their ordered quaternary Zn_xCd_yHg_1-x-yTe alloys using the full potential linearized augmented plane wave (FP-LAPW) method based on the density functional theory. We have numerically estimated the total energies, the lattice parameters, the bulk moduli and their first pressure derivative using the generalized gradient approximation (GGA). The band structure is computed using the modified Becke-Johnson (TB-mBJ) approximation. Results of our study show a nonlinear dependence of the composition on the lattice constant, bulk modulus and band gap for the binary and ternary compounds as well as for the quaternary alloys. Additionally, the dielectric function, the refractive index and the loss energy were also reported. The pressure effect on the band gap energy and optical properties were also investigated and reported. Our results are in good agreement with experimental values and theoretical data available in the literature.     

Hg1-xCdxTe禁带以上的本征光吸收

讨论了HgCdTe三元半导体在能量大于禁带宽度范围内的本征吸收光谱。经过分析比较实验数据,Kane理论结果以及几种经验公式,指出Anderson从Kane模型获得的理论公式及褚君浩等从实验结果得出的经验公式,最符合HgCdTe禁带以上本征光吸收行为。文中还就外延薄膜样品的本征吸收进行了讨论。 关键词：     

The optical properties of CdxZn1−xS thin films on glass substrate prepared by spray pyrolysis method

A series of Cd_xZn_1−xS thin films have been deposited on glass substrates using spray pyrolysis technique. The crystallinity and microstructure of Cd_xZn_1−xS thin films have been investigated by X-ray diffraction (XRD). Based on the results of Hall measurements, the films obtained were an n-type semiconductor. The X-ray data analysis of Cd_xZn_1−xS thin films showed that the grain size of the Cd_xZn_1−xS increased with increase in Cd composition. It is observed that the band gap increases as the Cd composition decreases. The results also showed a blue shift of absorption edge of optical transmission spectra is increases as Zn ratio increases. The effects of Cd composition on the structural and optical properties of Cd_xZn_1−xS thin films were related to their grain size, stress and carrier concentration.     

Characterization of flash evaporated Hg1−xZnxTe films

Results of structural, optical and electrical properties of flash-evaporated Hg_1−xZn_xTe films. in the composition range 0.08 ⩽ x ⩽ 1, show that the films are formed by alloying HgTe and ZnTe. The optical band gap of these films increases from 0.04 to 2.26 eV with an increase in Zn concentration from 0.08 to 1.0. The band gap variation is not linear but shows a “bowing effect” familiar to pseudobinary solid solutions. An increase in resistivity with an increase in the substrate temperature can be related to larger grain size at the higher substrate temperatures in these p-type films. The films exhibit higher conductivity for the Hg-rich films which decreases linearly as the Zn concentration is increased.     

The performance of Hg1−x Zn x Te photodiodes

This paper considers the Hg_1–x Zn _x Te alloy system as a potential material for the fabrication of infrared photodiodes. The influence of different junction current components (diffusion, tunneling and depletion layer currents) on the R ₀ A product of n⁺-pHg_1–x Zn _x Te photodiodes is analysed. The upper theoretical limits of the R ₀ A product and detectivity are determined. Results of calculations are compared with experimental data reported by other authors and those measured in our laboratory. Preliminary results on related technology and the properties of Hg_1–x Zn _x Te prepared by the ion-etching technique are presented.     

NiP:Mn as a potential magnetic contacting material to Cd1−xMnxTe

Injection of spin-polarized current into spintronic devices is a challenge to the semiconductor physicists and technologists. II-VI compound semiconductors can act as the spin aligner on the top of GaAs light emitting diode. However, II-VI compound semiconductor like Cd_1−xMn_xTe is still suffering from contacting problem. Application of electroless deposited magnetic NiP:Mn contact would enhance efficient current injection into Cd_1−xMn_xTe than the standard gold contact. A technique for electroless deposition of NiP:Mn on Cd_1−xMn_xTe have been described here. The electronic and magnetic properties of the contact material NiP:Mn and the contact performance of NiP:Mn relative to evaporated gold have been evaluated. The contact fulfills the requirements of resistivity and ferromagnetism for application to Cd_1−xMn_xTe.     

The effect of growth ambient on the structural and optical properties of MgxZn1−xO thin films

Mg_xZn_1−xO (x = 0.0-0.20) thin films have been deposited by sol-gel technique on glass substrates and the effect of growth ambient (air and oxygen) on the structural, and optical properties have been investigated. The films synthesized in both ambient have hexagonal wurtzite structure. The c-axis lattice constant decreases linearly with the Mg content (x) up to x = 0.05, and 0.10 respectively for air- and oxygen-treated films, above which up to x = 0.20, the values vary irregularly with x. The change in the optical band gap values and the ultraviolet (UV) peak positions of Mg_xZn_1−xO films show the similar change with x. These results suggest that the formation of solid solution and thus the structural and optical properties of Mg_xZn_1−xO thin films are affected by the growth ambient.     

Study of one-mode,two-mode and three-mode phonon behavior in mixed zinc blende alloys

In this paper, we put forth a microscopic interpretation of the characteristics of vibrational spectra of zinc blende semiconductor alloys arising due to either difference in masses or contrast in bond lengths. Previous Raman and infrared experiments have helped in identifying two mode vibrational behaviors in mixed systems of Zn_1−xMg_xSe and Zn_1−xMg_xTe in contrast to the one-mode behavior in Zn_1−xMg_xS. Our lattice dynamics computations have elucidated that in addition to the mass of the anion, bond length anomalies, energy separation between the two sets of optical modes, and the magnitudes of the scattering cross section play an important role in the observance of one mode behavior in the S system, two mode behavior for the whole of the composition range in the Se and Te systems, and an additional Be–Te like vibrational doublet in case of Zn_1−xBe_xTe. Our calculations incorporate the treatment of disorder through a supercell approach. The calculated lattice constants for different concentrations, the bimodal bond length distribution, as well as the phonon frequencies at the Brillouin zone centre are in good agreement with the available experimental data.     

The behavior of Shubinikov-de Haas oscillations in Hg1−x−yCdxMnyTe alloys

The transverse and longitudinal magnetoresistance are measured on a quaternary semimagnetic semiconductor, n-type Hg_1−x−yCd_xMn_yTe with 0.01 < x < 0.23 and y ≈ 0.14, at different temperatures. The peaks of the Landau-spin states are assigned using the selection rules already developed for HgCdTe. The Landau-spin states are modified by an exchange interaction between the Mn²⁺ ions localized spin and the band electrons, thus it becomes possible to compare directly the extent of the spin modification between the negative gap side and the open gap side of the new alloys.     

Electrical and optical properties of a-SexTe100–x thin films

The dc electrical conductivity of as deposited thin films of a-Se_xTe_100?x (x=3, 6, 9 and 12) is measured as a function of temperature range from 298 to 383 K. It is observed that the dc conductivity increases exponentially with the increase in temperature in this glassy system. The value of activation energy calculated from the slope of ln σ_dc vs. 1000/T plot, is found to decrease on incorporation of dopant (Se) content in the Te system. On the basis of pre-exponetial factor (σ₀), it is suggested that the conduction is due to thermally assisted tunneling of the carriers in the localized states near the band edges. The optical absorption measurements show an indirect optical band gap in this system and it decreases on increasing Se concentration. The optical constants (extinction coefficient (k) and refractive index (n)) do change significantly with the photon energy and also with the dopant Se concentration. The decrease in optical band gap may be due to the decrease in activation energy in the present system. It is also found that the real and imaginary parts of dielectric constants show a significant change with the photon energy as well as with the dopant concentration. With large absorption coefficients and compositional dependence of optical band gap and optical constants (n and k), these materials may be suitable for optical disk applications.     

Ab initio calculations of structural,electronic, optical and thermodynamic properties of alkaline earth tellurides BaxSr1−XTe

Structural, electronic and thermodynamic properties of SrTe and BaTe compounds and their ternary mixed crystals Ba_xSr_1−xTe in the rock-salt structure have been studied with density functional theory (DFT), whereas the optical properties have been obtained by using empirical methods such as the modified Moss relation. The exchange-correlation potential was calculated using the generalized gradient approximation (GGA) of Perdew–Burke–Ernzerhof (PBE) and the local density approximation (LDA) of Teter–Pade (TP). In the present work, we used the virtual-crystal approximation (VCA) to study the effect of composition (x). The calculated lattice parameters at equilibrium volume and the bulk modulus for x=0 and x=1 are in good agreement with the literature data. Furthermore, the Ba_xSr_1−xTe alloys are found to be an indirect band gap semiconductor. In addition, we have also predicted the heat capacities (C_V), the entropy(S), the internal energy (U) and the Helmholtz free energy (F) of the parent compounds SrTe and BaTe.     

Investigation of nonlinear optical parameters of zinc based amorphous chalcogenide films

Third order nonlinear optical properties of amorphous Zn_x–S_y–Se_100−x−y chalcogenide films have been investigated using single beam transmission z-scan technique at 1064 nm of Nd:YAG laser. Measurement of optical properties of amorphous Zn_x–S_y–Se_100−x−y chalcogenide films prepared by thermal evaporation technique has been made. X-ray diffraction patterns of chalcogenide films confirm the amorphous nature. Optical band gap (E_g) has been estimated using Tauc's plot method from transmission spectra that is found to decrease with increase in content due to valence band broadening and band tailing the system. Nonlinear refractive index (n₂), nonlinear absorption coefficient (β) and third order nonlinear susceptibility (χ³) of chalcogenide films have been estimated. Self-focusing effect has been observed in closed aperture and reverse saturable absorption in open aperture scheme. Limiting threshold and dynamic range have been calculated from optical limiting studies. The increase in nonlinearity with increase in Zn content has been observed that is understood to be due to decrease in band gap on Zn doping. High nonlinearity makes these films a potential candidate for waveguides, fibers and two photon absorption in optical limiters.     

Crystal structures of two variants for CuPtB-type ordering in strained CdxZn1−xTe epilayers

Two variants of CuPt_B-type orderings in strained Cd_xZn_1−xTe epilayers were investigated by using transmission electron microscopy (TEM) and selected area diffraction pattern (SADP) measurements. The TEM images on the Cd_0.15Zn_0.85Te epilayers depicted strong contrast modulations along the [110] direction, and the SADP images showed superstructure reflection spots corresponding to a CuPt_B-type ordering. Possible crystal structures for the two variants of CuPt_B-type ordering in the Cd_xZn_1−xTe epilayers, which were determined from the SADP images, are presented.     

Structural, optical and electrical properties of Zn1−xCdxO thin films prepared by PLD

Ternary polycrystalline Zn_1−xCd_xO semiconductor films with cadmium content x ranging from 0 to 0.23 were obtained on quartz substrate by pulse laser deposited (PLD) technique. X-ray diffraction measurement revealed that all the films were single phase of wurtzite structure grown on c-axis orientation with its c-axis lattice constant increasing as the Cd content x increasing. Atomic force microscopy observation revealed that the grain size of Zn_1−xCd_xO films decreases continuously as the Cd content x increases. Both photoluminescence and optical measurements showed that the band gap decreases from 3.27 to 2.78 eV with increasing the Cd content x. The increase in Cd content x also leads to the broadening of the emission peak. The resistivity of Zn_1−xCd_xO films decreases evidently for higher values of Cd content x. The shift of PL emission to visible light as well as the decrease of resistivity makes the Zn_1−xCd_xO films potential candidate for optoelectronic device.     

Elasticity, band structure, and piezoelectricity of BexZn1−xO alloys

Lattice constants, elasticity, band structure and piezoelectricity of hexagonal wide band gap Be_xZn_1−xO ternary alloys are calculated using first-principles methods. The alloys' lattice constants obey Vegard's law well. As Be concentration increases, the bulk modulus and Young's modulus of the alloys increase, whereas the piezoelectricity decreases. We predict that Be_xZn_1−xO/GaN/substrate (x=0.022) multilayer structure can be suitable for high-frequency surface acoustic wave device applications. Our calculated results are in good agreement with experimental data and other theoretical calculations.