Crystal structure,NMR study,dielectric relaxation and AC conductivity of a new compound [Cd3(SCN)2Br6(C2H9N2)2]n

The crystal structure, the ¹³C NMR spectroscopy and the complex impedance have been carried out on [Cd₃(SCN)₂Br₆(C₂H₉N₂)₂]_n. Crystal structure shows a 2D polymeric network built up of two crystallographically independent cadmium atoms with two different octahedral coordinations. This compound exhibits a phase transition at (T=355±2 K) which has been characterized by differential scanning calorimetry (DSC), X-rays powder diffraction, AC conductivity and dielectric measurements. Examination of ¹³C CP/MAS line shapes shows indirect spin–spin coupling (¹⁴N and ¹³C) with a dipolar coupling constant of 1339 Hz. The AC conductivity of this compound has been carried out in the temperature range 325–376 K and the frequency range from 10⁻² Hz to 10 MHz. The impedance data were well fitted to two equivalent electrical circuits. The results of the modulus study reveal the presence of two distinct relaxation processes. One, at low frequency side, is thermally activated due to the ionic conduction of the crystal and the other, at higher frequency side, gradually disappears when temperature reaches 355 K which is attributed to the localized dipoles in the crystal. Moreover, the temperature dependence of DC-conductivity in both phases follows the Arrhenius law and the frequency dependence of σ(ω,T) follows Jonscher's universal law. The near values of activation energies obtained from the conductivity data and impedance confirm that the transport is through the ion hopping mechanism.     

Dielectric relaxation in single crystal NH4H2PO4 in the high-temperature regime

The dispersion curves of the dielectric response in single crystal NH₄H₂PO₄ were obtained in the radio frequency range and below the high-temperature transition at T_p−160 °C. The results reveal dielectric relaxation at low frequency, which is about 10⁵ Hz at 70 °C, and it shifts to higher frequencies (∼3×10⁶ Hz) as the temperature increases. The relaxation frequency was determined from the peak obtained in the imaginary part of the permittivity as well as from the derivative of the real part of the permittivity. The activation energy E_a=0.55 eV, obtained from the relaxation frequency is very close to that derived from the dc conductivity. We suggest that this dielectric relaxation could be due to the proton jump and phosphate reorientation that cause distortion and change the local lattice polarizability inducing dipoles like      

Electrical properties of SrBi2(Nb0.5Ta0.5)2O9 ceramics

Aurivillius SrBi₂(Nb_0.5Ta_0.5)₂O₉ (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. Scanning electron microscopy was applied to investigate the grain structure. The XRD studies revealed an orthorhombic structure in the SBNT 50/50 with lattice parameters a=5.522 Å, b=5.511 Å and c=25.114 Å. The dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material. Its occurrence was ascribed to the presence of ionized space charge carriers such as oxygen vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. The temperature dependence of various electrical properties was determined and discussed. The thermal activation energy for the grain electric conductivity was lower in the high temperature region (T>303.6 °C, E_a−ht=0.47 eV) and higher in the low temperature region (T<303.6 °C, E_a−lt=1.18 eV).     

Dielectric and AC ionic conductivity investigations in K3H(SeO4)2 single crystal

Optical observation under the polarizing microscope and DSC measurements on K₃H(SeO₄)₂ single crystal have been carried out in the temperature range 25-200 °C. It reveals a high-temperature structural phase transition at around 110 °C. The crystal system transformed from monoclinic to trigonal. Electrical impedance measurements of K₃H(SeO₄)₂ were performed as a function of both temperature and frequency. The electrical conduction and dielectric relaxation have been studied. The temperature dependence of electrical conductivity indicates that the sample crystal became a fast ionic conductor in the high-temperature phase. The frequency dependence of conductivity follows the Jonscher's universal dynamic law with the relation σ(ω)=σ(0)+Aωⁿ, where ω is the frequency of the AC field, and n is the exponent. The obtained n values decrease from 1.2 to 0.1 from the room temperature phase to fast ionic phase. The high ionic conductivity in the high-temperature phase is explained by the dynamical disordering of protons between the neighboring SeO₄ groups, which provide more vacant sites in the crystal.     

Ionic to electronic dominant conductivity in Al2(WO4)3 at high pressure and high temperature

Electrical conduction and crystal structure of Al₂(WO₄)₃ at 400 °C have been studied as a function of pressure up to 5.5 GPa using impedance methods and synchrotron radiation X-ray diffraction, respectively. AC impedance spectroscopy and DC polarization measurements reveal an ionic to electronic dominant transition in electrical conductivity at a pressure as low as 0.9 GPa. Conductivity increases with pressure and reaches a maximum at 4.0 GPa, where the conductivity value is 5 orders of magnitude greater than the 1 atm value. Upon decompression, the conductivity retains the maximum value until the sample is cooled at 0.5 GPa. The high pressure-temperature X-ray diffraction results show that the lattice parameters decrease as pressure increases and the crystal structure undergoes an orthorhombic to tetragonal-like transformation at a pressure ∼3.0 GPa. The change of conduction mechanism from ionic to electronic may be explained by means of pressure-induced valence change of W⁶⁺→W⁵⁺, which results in electron transfer between W⁵⁺-W⁶⁺ sites at high pressure.     

Growth, thermal and spectroscopic characterizations of BaNd2(MoO4)4 crystal

A new crystal, BaNd₂(MoO₄)₄, has been grown from the flux melt based on Li₂Mo₃O₁₀ by a spontaneous nucleation method. The phase structure of the obtained crystals was determined by X-ray powder diffraction. The result shows that the as-grown crystals are well crystallized and indexed in a monoclinic crystal system with space group B2/b. The specific heat of BaNd₂(MoO₄)₄ crystal at 20 °C is 0.485 J/g K. Absorption and fluorescence spectra were also measured at room temperature. There are several strong and broad absorption peaks from 200 to 1200 nm and three emission transition bands located at 890, 1060, and 1334 nm are detected.     

Electrical conductivity and amorphization of Sc2(WO4)3 at high pressures and temperatures

Impedance spectroscopy measurements and synchrotron X-ray diffraction studies of Sc₂(WO₄)₃ at 400°C have been carried out as a function of pressure up to 4.4 GPa. Ionic conductivity shows normal decrease with increase in pressure up to 2.9 GPa, but then increases at higher pressures. The XRD results show that Sc₂(WO₄)₃ undergoes pressure-induced amorphization at pressures coincident with the reversal in conductivity behavior. The loss of crystal structure at high pressure is consistent with growing evidence of pressure-induced amorphization in negative thermal expansion materials, such as Sc₂(WO₄)₃. The increase in conductivity in the amorphized state is interpreted as the result of an increase in structural entropy and a concomitant reduction of energy barriers for ionic transport.     

Magnetic properties of xNi0.53Cu0.12Zn0.35Fe1.88O4+(1−x)BaTiO3 nanocomposites

The nanocrystalline Ni_0.53Cu_0.12Zn_0.35Fe_1.88O₄ and BaTiO₃ powders were prepared using Microwave-Hydrothermal (M-H) method at 160 °C/45 min. The as synthesized powders were characterized using the X-ray diffraction (XRD) and Transmission Electron Microscope (TEM). The size of the powders that were synthesized using M-H system was found to be ∼30 and ∼50 nm for ferrite phase and ferroelectric phases, respectively. The powders were densified using microwave sintering method at 900 °C/30 min. The ferrite and ferroelectric phases were observed from XRD and morphology of the composites was observed with the Scanning Electron Microscope (SEM).The magnetic hysteresis loops were recorded using the Vibrating Sample Magnetometer (VSM).The frequency dependence of real (μ′) and imaginary (μ″) parts of permeability was measured in the range of 1 MHz-1.8 GHz. The permeability decreases with an increase of BaTiO₃ content at 1 MHz. The transition temperature (T_C) of ferrite was found to be 245 °C. The T_C of composite materials decreases with an increase in BaTiO₃ content.     

Dielectric relaxation and ac conductivity of double perovskite oxide Ho2ZnZrO6

Double perovskite oxide holmium zinc zirconate Ho₂ZnZrO₆ (HZZ) is synthesized by solid state reaction technique under a calcination temperature of 1100 °C. The crystal structure has been determined by powder X-ray diffraction, which shows monoclinic phase at room temperature. The variation of dielectric constant (ε′) and loss tangent (tan δ) with frequency is carried out assuming a distribution of relaxation times. The frequency corresponding to loss tangent peak is found to obey an Arrhenius law with activation energy of 89.7 meV. The frequency-dependant electrical data are analyzed in the framework of conductivity and electric modulus formalisms. Both these formalisms show qualitative similarities in relaxation times. The scaling behaviour of imaginary electric modulus shows the temperature-independent nature of the distribution of relaxation times. Nyquist plots are drawn to identify an equivalent circuit and to know the bulk and interface contributions.     

Structural,magnetic and electrical properties of Co1−xZnxFe2O4 synthesized by co-precipitation method

Nanoparticles of Co_1−xZn_xFe₂O₄ with stoichiometric proportion (x) varying from 0.0 to 0.6 were prepared by the chemical co-precipitation method. The samples were sintered at 600 °C for 2 h and were characterized by X-ray diffraction (XRD), low field AC magnetic susceptibility, DC electrical resistivity and dielectric constant measurements. From the analysis of XRD patterns, the nanocrystalline ferrite had been obtained at pH=12.5–13 and reaction time of 45 min. The particle size was calculated from the most intense peak (3 1 1) using the Scherrer formula. The size of precipitated particles lies within the range 12–16 nm, obtained at reaction temperature of 70 °C. The Curie temperature was obtained from AC magnetic susceptibility measurements in the range 77–850 K. It is observed that Curie temperature decreases with the increase of Zn concentration. DC electrical resistivity measurements were carried out by two-probe method from 370 to 580 K. Temperature-dependent DC electrical resistivity decreases with increase in temperature ensuring the semiconductor nature of the samples. DC electrical resistivity results are discussed in terms of polaron hopping model. Activation energy calculated from the DC electrical resistivity versus temperature for all the samples ranges from 0.658 to 0.849 eV. The drift mobility increases by increasing temperature due to decrease in DC electrical resisitivity. The dielectric constants are studied as a function of frequency in the range 100 Hz–1 MHz at room temperature. The dielectric constant decreases with increasing frequency for all the samples and follow the Maxwell–Wagner's interfacial polarization.     

Synthesis process and the luminescence properties of rare earth doped NaLa(WO4)2 nanoparticles

Rare earth doped NaLa(WO₄)₂ nanoparticles have been prepared by a simply hydrothermal synthesis procedure. The X-ray diffraction (XRD) pattern shows that the Eu³⁺-doped NaLa(WO₄)₂ nanoparticles with an average size of 10-30 nm can be obtained via hydrothermal treatment for different time at 180 °C. The luminescence intensity of Eu³⁺-doped NaLa(WO₄)₂ nanoparticles depended on the size of the nanoparticles. The bright upconversion luminescence of the 2 mol% Er³⁺ and 20 mol% Yb³⁺ codoped NaLa(WO₄)₂ nanoparticles under 980 nm excitation could also be observed. The Yb³⁺-Er³⁺ codoped NaLa(WO₄)₂ nanoparticles prepared by the hydrothermal treatment at 180 °C and then heated at 600 °C shows a 20 times stronger upconversion luminescence than those prepared by hydrothermal treatment at 180 °C or by hydrothermal treatment at 180 °C and then heated at 400 °C.     

Preparation and physical properties of CuxWO3

We report on the study of WO₃ doped with Cu using sol-gel (Cu_xWO₃^d) and impregnation (Cu_xWO₃ⁱ) methods. All materials are well crystallized and exhibit single phases whose crystallite size ranges from 17 to 100 nm depending on Cu amount and the preparation technique. The conductivity dependence on temperature demonstrates semiconductor behavior and follows the Arrhenius model, with activation energies, E_σ, commonly in the range 0.4-0.6 eV. Moreover, the thermopower study shows that Cu_xWO₃^d is mainly of p-type conductivity, whereas Cu_xWO₃ⁱ is n-type. The mechanism of conduction is attributed to a small polaron hopping. The doping process is found to decrease the interband transition down to 520 nm depending on the preparation conditions. The photoelectrochemical characterization confirms the conductivity type and demonstrates that the photocurrent J_ph increases with Cu-doping. Taking into consideration the activation energy, the flat band potential and the band gap energy, the band positions of each material are proposed according to the preparation method and Cu amount.     

Phase transitions and molecular motions in [Zn(NH3)4](BF4)2 studied by nuclear magnetic resonance, infrared and Raman spectroscopy

Middle infrared absorption, Raman scattering and proton magnetic resonance relaxation measurements were performed for [Zn(NH₃)₄](BF₄) in order to establish relationship between the observed phase transitions and reorientational motions of the NH₃ ligands and BF₄⁻ anions. The temperature dependence of spin-lattice relaxation time (T₁(¹H)) and of the full width at half maximum (FWHM) of the bands connected with ρ_r(NH₃), ν₂(BF₄) and ν₄(BF₄) modes in the infrared and in the Raman spectra have shown that in the high temperature phase of [Zn(NH₃)₄](BF₄)₂ all molecular groups perform the following stochastic reorientational motions: fast (τ_R≈10⁻¹² s) 120° flips of NH₃ ligands about three-fold axis, fast isotropic reorientation of BF₄⁻ anions and slow (τ_R≈10⁻⁴ s) isotropic reorientation (“tumbling”) of the whole [Zn(NH₃)₄]²⁺ cation. Mean values of the activation energies for uniaxial reorientation of NH₃ and isotropic reorientation of BF₄⁻ at phases I and II are ca. 3 kJ mol⁻¹ and ca. 5 kJ mol⁻¹, respectively. At phases III and IV the activation energies values for uniaxial reorientation of both NH₃ and of BF₄⁻ equal to ca. 7 kJ mol⁻¹. Nearly the same values of the activation energies, as well as of the reorientational correlation times, at phases III and IV well explain existence of the coupling between reorientational motions of NH₃ and BF₄⁻. Splitting some of the infrared bands at T_C2=117 K suggests reducing of crystal symmetry at this phase transition. Sudden narrowing of the bands connected with ν₂(BF₄), ν₄(BF₄) and ρ_r(NH₃) modes at T_C3=101 K implies slowing down (τ_R?10⁻¹⁰ s) of the fast uniaxial reorientational motions of the BF₄⁻ anions and NH₃ ligands at this phase transition.     

Enhanced ferroelectric property of (Pb0.95Ca0.05)(Nb0.02Zr0.80Ti0.20)O3 thin films prepared by RF magnetron sputtering

(Pb_0.95Ca_0.05)(Nb_0.02Zr_0.80Ti_0.20)O₃ [PCNZT] thin films were deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by RF magnetron sputtering with and without a LaNiO₃ [LNO] buffer layer. Ca and Nb elements in PZT films enhance the ferroelectric property, LaNiO₃ buffer layer improves the crystal quality of the PCNZT thin films. PCNZT thin films possess better ferroelectric property than that of PZT films for Ca and Nb ion substitution, moreover, PCNZT thin films with a LNO buffer layer possess (1 0 0) orientation and good ferroelectric properties with high remnant polarization (P_r = 38.1 μC/cm²), and low coercive field (E_c = 65 kV/cm), which is also better than that of PCNZT thin films without a LNO buffer layer (P_r = 27.9 μC/cm², E_c = 74 kV/cm). The result shows that enhanced ferroelectric property of PZT films can be obtained by ion substitution and buffer layer.     

Electrical investigations in the normal and incommensurate phases of [N(CH3)4]2ZnCl4 single crystals

The dielectric permittivity (?) of TMA-ZC single crystals was measured along the mean crystallographic axes a, b and c, in a temperature range from 273 to 340 K. The ?-T relationship exhibited peak values at T_i=296 K and T_c1=279 K for the three axes. These peaks are attributed to the contribution of discommensurations. The d.c. and a.c. electrical conductivity showed anomalous variation at the same transition temperatures, with a remarkable change in the value of the activation energy around the transition temperatures. The j-E characteristic indicates different types of electrical conduction. The mechanism of the phase transition and the electrical process were discussed on the basis of Shottky and Frenkel conduction mechanisms.     

Impedance spectroscopy study and ground state electronic properties of In(Mg1/2Ti1/2)O3

The complex perovskite oxide In(Mg_1/2Ti_1/2)O₃ (IMT) is synthesized by a solid state reaction technique. The X-ray diffraction of the sample at 30 °C shows a monoclinic phase. The dielectric properties of the sample are investigated in the temperature range from 143 to 373 K and in the frequency range from 580 Hz to 1 MHz using impedance spectroscopy. An analysis of the dielectric constant ε′ and loss tangent (tan δ) with frequency is performed assuming a distribution of relaxation times. The Cole-Cole model is used to explain the relaxation mechanism in IMT. The scaling behavior of imaginary part of electric modulus (M″) shows that the relaxation describes the same mechanism at various temperatures. The electronic structure and hence the ground state properties of IMT is studied by X-ray photoemission spectroscopy (XPS). The valence band XPS spectrum is compared with the electronic structure calculation. The electronic structure calculation indicates that the In-5s orbital introduces a significant density of states at the Fermi level, which is responsible for a high value of conductivity in IMT.     

Synthesis and ion conductivity of (Bi2O3)0.75(Dy2O3)0.25 ceramics with grain sizes from the nano to the micro scale

Using (Bi₂O₃)_0.75(Dy₂O₃)_0.25 nano-powder synthesized by reverse titration co-precipitation method as raw material, dense ceramics were sintered by both Spark Plasma Sintering (SPS) and pressureless sintering. According to the predominance area diagram of Bi-O binary system, the sintering conditions under SPS were optimized. (Bi₂O₃)_0.75(Dy₂O₃)_0.25 ceramics with relative density higher than 95% and an average grain size of 20 nm were sintered in only 10 min up to 500 °C. During the pressureless sintering process, the grain growth behavior of (Bi₂O₃)_0.75(Dy₂O₃)_0.25 followed a parabolic trend, expressed as D² − D₀² = Kt, and the apparent activation energy of grain growth was found to be 284 kJ mol^− 1. Dense (Bi₂O₃)_0.75(Dy₂O₃)_0.25 ceramics with different grain sizes were obtained, and the effect of grain size on ion conductivity was investigated by impedance spectroscopy. It was shown that the total ion conductivity was not affected by the grain size down to 100 nm, however lower conductivity was measured for the sample with the smallest grain size (20 nm). But, although only the δ phase was evidenced by X-ray diffraction for this sample, a closer inspection by Raman spectroscopy revealed traces of α-Bi₂O₃.     

Theoretical investigation on thermal lensing effects of Yb:KY(WO4)2 in diode-pumped lasers

Based on the features of laser diode end-pumped lasers, a thermal model of Yb:KY(WO₄)₂(Yb:KYW) with square cross-section was established. Considering the heat transfer on side faces, the anisotropic of thermal conductivity and the latest reports about thermo-optic coefficient, thermal expansion coefficient and thermal conductivity, temperature distribution, end-pumped face distortion and thermal lens focal length of Yb:KYW were more precisely obtained using finite difference method to solve Poisson equation in a rectangular Cartesian coordinate for the first time. At the pump power of 14 W, the highest temperature located at the center of end-pumped face was 243.8 °C, the highest distortion was 0.28 μm, and the thermal lens focal length was 5.4 cm along z-axis and −4.9 cm along x-axis. The results show that thermal lensing effects in the b-cut Yb:KYW were mainly determined by the anisotropic thermal expansion of Yb:KYW, and further present thermal lensing effects become weaker after considering the heat transfer. This work is significant for compensating the thermal lensing effect and improving the resonator stability of diode-pumped anisotropy crystal lasers.     

Structure and dielectric studies of nano-composite Fe2O3: BaTiO3 prepared by sol-gel method

Nano-structure pure barium titanate (BaTiO₃) and that was doped with iron oxide (Fe₂O₃), have been prepared by sol-gel method, using barium acetate (Ba(Ac)₂) and titanium butoxide (Ti(C₄H₉O)₄), as precursors. The as-grown prepared samples by sol-gel technique were found to be amorphous, which crystallized to the tetragonal phase after synthesized at 750 °C in air for 1 h as detected from the XRD patterns. The XRD data were confirmed by transmission electron microscope (TEM). The dielectric properties namely; dielectric constant (ε′) and loss tangent (tan δ) in the frequency range between 42 Hz and 1 MHz, at range of temperature 25-250 °C were investigated. The temperature dependence of ε′ and tan δ for the undoped and doped materials, at 1 kHz, was also investigated. As a result, tan δ increased rapidly with decreasing temperature below 125 °C (Curie temperature) while above this temperature, tan δ shows temperature independent. As a result, below and above Curie temperature, ferroelectric phase and paraelectric phase of BaTiO₃ can be obtained, respectively.