Room temperature ferromagnetism of amorphous MgO films prepared by pulsed laser deposition

Amorphous MgO thin films were prepared by pulsed laser deposition (PLD) under various oxygen pressures. The structural, magnetic, and optical properties of the films were investigated. All as-deposited samples exhibit room temperature ferromagnetism, which depend strongly on oxygen pressure. It is found that the saturation magnetization (M _s) initially increases with the oxygen pressure, the maximum M _s of 8.57 emu/cm³ is obtained for the MgO film deposited under an oxygen pressure of 2 mTorr. However, the M _s significantly reduces at higher oxygen pressures. Further X-ray photoelectron spectroscopy and photoluminescence demonstrate that the long-range magnetic order in amorphous MgO films can be attributed to the nonstoichiometry effect and the presence of Mg vacancies.     

Formation of ZnO and Zn1−xCdxO films on CdTe/CdZnTe single crystals

In this work we report on the properties of ZnO and Zn_1−xCd_xO films formed on top of CdTe and CdZnTe single crystals. The films have been obtained by thermal evaporation of Zn metal films and further oxidation in atmospheric conditions. The structural and compositional characteristics of the films have been analysed by means of scanning electron microscopy and energy-dispersive X-ray analysis. The chemical composition of the films as a function of growth parameters has been obtained. It has been possible to demonstrate by Raman spectroscopy the formation of both ZnO and Zn_1−xCd_xO films. The possible inter-diffusion effects between the films and the substrate, derived from the oxidation process, have been discussed. It has been possible to check by means of photoluminescence, the optical quality of the ZnO and Zn_1−xCd_xO films, also regarding to the presence of local changes. Differences between the optical spectra obtained from various ZnO films grown on top of CdTe and CdZnTe substrates enabled the determination of compositional differences introduced by the substrate when the deposition parameters are modified.     

Fabrication of cuprous and cupric oxide thin films by heat treatment

Cuprous oxide (Cu₂O) and cupric oxide (CuO) thin films were prepared by thermal oxidation of copper films coated on indium tin oxide (ITO) glass and non-alkaline glass substrates. The formation of Cu₂O and CuO was controlled by varying oxidation conditions such as, oxygen partial pressure, heat treatment temperature, and oxidation time. The microstructure, crystal direction, and optical properties of copper oxide films were measured with X-ray diffraction, atomic force microscopy, and optical spectroscopy. The results indicated that the phase-pure Cu₂O and CuO films were produced in the oxidation process. Optical transmittance and reflectance spectra of Cu₂O and CuO clearly exhibited distinct characteristics related to their phases. The electrical properties indicated that these films formed ohmic contacts with Cu and ITO electrode materials. Multilayers of Cu₂O/CuO were fabricated by choosing the oxidation sequence. The experimental results in this paper suggest that the thermal oxidation method can be employed to fabricate device quality Cu₂O and CuO films that are up to 200–300 nm thick.     

Effect of oxygen content and deposition temperature on the characteristics of thin silver films deposited by magnetron sputtering

Thin silver films were prepared by direct current magnetron sputtering in a single-ended in-line sputter system at various substrate temperatures and in O₂ contents in sputter gas, and their electrical, optical, structural and morphological properties together with the compositional properties were investigated. When deposited at room temperature, the electrical and optical properties of Ag films deteriorated with addition of O₂ to sputter gas. Deposition of Ag films in O₂ added sputter gas promoted the formation of Ag crystallites with (2 0 0) plane parallel to the substrate surface. The electrical resistivity and optical reflection of Ag films deposited above 100 °C were not affected by the sputtering plasma containing oxygen. X-ray photoelectron spectroscopic analysis showed that Ag films deposited above 100 °C in O₂ added sputter gas did not possess surplus oxygen in the film, and that the oxidation states of these films were almost identical to that of Ag films deposited in pure Ar gas.     

Wide transparency range and high refractive index lead–niobium-germanate glass thin films

Lead–niobium-germanate glass thin films have been produced by pulsed laser deposition in a broad O₂ pressure range (10^-6–10^-1 mbar). The cation composition in the films approaches that of the glass target for a pressure of 10^-2 mbar. The oxygen content is only close to or above that of the glass for a pressure close to 10^-1 mbar, for which a Pb enrichment is also observed. Films grown in vacuum are highly absorbing, whereas transparent films with an absorption edge shifted to the UV with respect to the bulk glass are produced for pressures higher than 10^-2 mbar. The evolution of the optical energy gap and the refractive index of the films with the oxygen pressure is correlated to the changes observed in the film composition and discussed in terms of the features of the deposition process, the role of oxygen in the formation of the glass network and the progressive increase of the oxidation state of the cations as the oxygen pressure is increased. PACS 81.05.Kf; 78.20.Ci; 81.15.Fg     

Impurity distribution and electrical characteristics of boron-doped Si1−x Ge x /Si p +/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and Gas-immersion laser doping

A two-step pulsed UV-laser process which independently controls the metallurgical and electrical junction depth of a Si_1–x Ge _x /Si heterojunction diode has been implemented. Pulsed Laser-Induced Epitaxy (PLIE) combined with Gas-immersion Laser Doping (GILD) are used to fabricate boron-doped heteroepitaxial p ⁺/N Si_1–x Ge _x /Si layers and diodes. Borontrifluoride is used as the gaseous dopant source in the GILD process step. Boron incorporation and activation are investigated as a function of laser energy fluence and the number of laser pulses using SIMS and Halleffect measurements. The dose of incorporated dopant is on the order of 10¹³ cm^–2 per pulse. The B profiles obtained are flat except for a peak at the interface resulting from segregation effects. The B and Ge distributions are compared with shifts in the turn-on voltage of p ⁺/N Si_1–x /Si heterojunction diodes produced by the process. The GILD/PLIE process is spatially selective with the resulting diodes fabricated being quasiplanar. Hole mobilities in the heavily doped Si_1–x Ge _x films are found to be slightly lower than in comparable Si films.Presently at the Oregon Graduate Institute, Beaverton, OR 97006, USA     

Microstructure and electrical conductivity of YSZ thin films prepared by pulsed laser deposition

Yttria-stabilized zirconia (YSZ) is the most common solid electrolyte material used e.g. in ceramic fuel cells. Thin films of YSZ were deposited on c-cut sapphire single crystals by pulsed laser deposition using a KrF excimer laser focused on a polycrystalline 8 mol% Y₂O₃-stabilized ZrO₂ target. Depending on the substrate temperature and the oxygen background pressure during deposition, different microstructures are obtained. XRD and high-resolution SEM revealed the formation of dense amorphous films at room temperature. At 600°C preferentially (111) oriented polycrystalline films consisting of densely agglomerated nm-sized grains of the cubic phase resulted. Grain size and surface roughness could be controlled by varying the oxygen background pressure. RBS and PIXE evidenced congruent transfer only for a low number of pulses, indicating a dynamical change of the target stoichiometry during laser irradiation. The in-plane ionic conductivity of the as-deposited crystalline films was comparable to bulk YSZ. The conductivity of initially amorphous YSZ passes a maximum during the crystallization process. However, the relative changes remain small, i.e. no significant enhancement of ionic conductivity related to the formation of a nanocrystalline microstructure is found.     

Time resolved spectra of optical and electrical transient response induced by nanosecond laser pulses in amorphous AgInSbTe films

The phase transition dynamics of amorphous Ag₈In₁₄Sb₅₅Te₂₃ (AIST) thin films induced by single nanosecond laser pulses were studied by transient optical reflectivity and electrical resistance measurements with nanosecond resolution. Phase transition driven by nanosecond laser pulses can be achieved in a proper fluence range on AIST thin films. The results show that phase transition dynamics driven by nanosecond laser pulses was a multi-stage optical evolution process involving melt, solidification, recalescence, and recrystallion. However, it was found that the real-time responses of optical and electrical signals were quite different under the same irradiated condition. The recalescence process reflected by the second rising of optical reflectivity will not result in obvious changes in electrical resistance. The dependence of saturated time determined by optical and electrical evolution curve on laser pulse fluence was compared and analyzed. A two-dimensional percolation model was employed to explain the difference between electrical and optical transient responses.     

Structure and microstructure of epitaxial Sr n Fe n O3 n −1 films

Thin films of SrFeO_{3??? x} (0?≤?x?≤?0.5) (SFO) grown on a (LaAlO₃)_0.3 (SrAl_0.5Ta_0.5O₃)_0.7 (LSAT) substrate by pulsed laser deposition have been structurally investigated by electron diffraction and high resolution transmission electron microscopy for different post-deposition oxygen treatments. During the deposition and post-growth oxidation, the oxygen-reduced SFO films accept extra oxygen along the tetrahedral layers to minimize the elastic strain energy. The oxidation process stops at a concentration SFO_2.875 and/or SFO_2.75 because a zero misfit with the LSAT substrate is reached. A possible growth mechanism and phase transition mechanism are suggested. The non-oxidized films exhibit twin boundaries having a local perovskite-type structure with a nominal composition close to SFO₃.     

Influences of oxygen partial pressure on structure and related properties of ZrO2 thin films prepared by electron beam evaporation deposition

ZrO₂ thin films were prepared by electron beam evaporation at different oxygen partial pressures. The influences of oxygen partial pressure on structure and related properties of ZrO₂ thin films were studied. Transmittance, thermal absorption, structure and residual stress of ZrO₂ thin films were measured by spectrophotometer, surface thermal lensing technique (STL), X-ray diffraction and optical interferometer, respectively. The results showed that the structure and related properties varied progressively with the increase of oxygen partial pressure. The refractive indices and the packing densities of the thin films decreased when the oxygen partial pressure increased. The tetragonal phase fraction in the thin films decreased gradually as oxygen partial pressure increased. The residual stress of film deposited at base pressure was high compressive stress, the value decreased with the increase of oxygen partial pressure, and the residual stress became tensile with the further increase of oxygen pressure, which was corresponding to the evolution of packing densities and variation of interplanar distances.     

Growth of Fe<Subscript>3</Subscript>O<Subscript>4</Subscript> films on the Si(111) surface covered by a thin SiO<Subscript>2</Subscript> layer

Magnetite polycrystalline films are grown by variously oxidizing a Fe film on the Si(111) surface covered by a thin (1.5 nm) SiO₂ layer. It is found that defects in the SiO₂ layer influence silicidation under heating of the Fe film. The high-temperature oxidation of the Fe film results in the formation of both Fe₃O₄ and iron monosilicide. However, the high-temperature deposition of Fe in an oxygen atmosphere leads to the growth of a compositionally uniform Fe₃O₄ film on the SiO₂ surface. It is found that such a synthesis method causes [311] texture to arise in the magnetite film, with the texture axis normal to the surface. The influence of the synthesis method on the magnetic properties of grown Fe₃O₄ films is studied. A high coercive force of Fe₃O₃ films grown by Fe film oxidation is related to their specific morphology and compositional nonuniformity.     

Residual gas and the optical properties of silver films

Silver films evaporated and maintained at room temperature in a variety of controlled residual gas environments are studied. Experimental techniques include: (1) precise in situ polarization-modulation ellipsometry $\text{(λ = 5461}\text{A}\text{?}\text{)}$ and dc resistivity as functions of time (after deposition) and pressure; (2) mass spectroscopy of residual gas; (3) optical spectra (1.8–3.8 eV) taken ellipsometrically on several films in situ; (4) Auger electron spectroscopy of the silver surfaces; and (5) absolute reflectance $\text{(λ = 5461}\text{A}\text{?}$ and 10.6 microm) and scattered light (5461 Å) measured after exposure of the films to air. H₂, N₂, CO, CO₂, or CH₄ present during deposition (p? 10^?5torr) shows no effects on the optical properties in the visible or infrared. Water vapor or oxygen present during deposition increases the scattered light (surface roughness) and optical absorption of the films in the visible. Films prepared in high partial pressures of O₂ (about 10^?5 torr) show significantly shorter optical and dc relaxation times and slightly enhanced infrared (λ = 10.6 microm) absorption. These results for stabilized films are understood better by considering the surface dynamical changes occurring in the films prior to stabilization. In the first few hours after deposition, the films anneal principally by surface self-diffusion. During this time the reflectance and dc conductivity increase typically by 0.4% and 10% respectively. The presence in the films of dissolved oxygen can enhance or inhibit self-diffusion depending on whether the oxygen is mobile or immobile. When dissolved oxygen diffuses to the surface, it resides there in an optically-absorbing chemisorbed state, inducing a surface state within about 2.5 eV of the Fermi level. These surface-dynamical changes often continue for more than a day before diminishing to a level beneath the sensitivity of the ellipsometer. Upon exposure to air the Ag films physisorb about 20 Å of water vapor and undergo further optically-absorbing oxygen chemisorption. All of the measurements are discussed in a consistent way to reveal further details of the mechanisms contributing to light scattering and optical absorption in the films as a function of oxygen partial pressure.     

Influence of oxygen partial pressure on structural, transport and magnetic properties of Co doped films

Pulse laser deposited (PLD) thin films of Co doped TiO₂ on silicon and quartz substrates are investigated. A mixture (1:1) of argon and oxygen with various total pressures (6.6 mPa to 53 Pa) is used to vary the oxygen content in the samples. The crystal structure and transport/ magnetic properties of Co_xTi_1−xO_2−δ (x=0.01, 0.03, 0.06) thin films are found to have strong dependence on oxygen stoichiometry. X-ray diffraction (XRD) data reveal mixed phase material containing both anatase and rutile. However, the stability of each phase depends on the amount of oxygen present in the chamber during the growth of the films. X-ray Photoelectron Spectroscopy (XPS) shows the incorporation of Co in TiO₂ and is in the 2+ oxidation state. There occurs an enhancement in electrical conductivity and magnetization due to the off stoichiometric oxygen. The resistivity data follow a simple thermal activation model, giving carriers’ activation energies in the range of 20 to 140 meV. A bound magnetic polaron model is adopted to explain the observed magnetic behavior of the films.     

Effects of laser irradiation on optical properties of a-Se100−x Te x thin films

The effect of laser irradiation on the optical properties of thermally evaporated Se_100?x Te _x (x=8, 12, 16) chalcogenide thin films has been studied. The result shows that the irradiation causes a shift in the optical gap. The results have been analyzed on the basis of laser irradiation-induced defects in the film. The width of the tail of localized state in the band gap has been evaluated using the Urbach edge method. As the irradiation time increases, the values of the optical energy gap for all compositions decrease, while tail energy width increases. It is also observed that the optical energy gap decreases with increasing Te content in the alloy. These changes are a consequence of an increment in disorder produced by laser irradiation in the amorphous structure of thin film.     

Properties of reactively sputtered Mo1−x O x films

Molybdenum oxide (Mo_1–xO_x) films were prepared by reactive rf sputtering of a Mo target in O₂/Ar plasma. The dependence of film properties on various sputtering parameters is investigated. The atomic percentage of oxygen (x) in the Mo_1–xO_x films decreases with sputtering power and increases with the partial pressure of oxygen. Mo_1–xO_x films that exhibit metallic conductivities can be obtained over a wide range of sputtering conditions. The intrinsic film stress of conducting Mo_1–xO_x is compressive. Such M_1–xO_x films were shown by backscattering spectrometry to be excellent diffusion barriers between Al and Si up to 600 °C annealing for 30 min.     

氧分压对Mg掺杂ZnO薄膜结晶质量和光学特性的影响

利用脉冲激光沉积技术,通过改变沉积过程中的氧气压力,在蓝宝石(0001)基片上制备了一系列ZnMgO合金.通过X射线衍射、反射和透射光谱以及室温和变温荧光光谱,对薄膜的结构和光学性能进行了系统地表征,分析了工作气压对ZnMgO合金薄膜的结晶质量及光学特性的影响.研究结果表明:随着沉积环境中氧气压力的增大,ZnMgO薄膜的结晶质量下降,富氧环境下,与蓝宝石晶格平行的ZnO晶粒的出现是导致薄膜结晶质量下降的主要原因;相对于本征ZnO,不同氧气环境下沉积的ZnMgO薄膜的紫外荧光峰均出现了不同程度的蓝移.随着工 关键词： ZnO Mg掺杂 脉冲激光沉积 薄膜生长 光学特性     

Radiation Effects on Optical Properties of Ethylene Vinyl Acetate Copolymer Films

The optical properties of ethylene vinyl acetate (EVA) film have been studied. The effects of gamma irradiations on the optical spectrum of EVA films have been investigated using spectrophotometric measurements of reflectance and transmittance in the wavelength range 200–1100 nm. The absorption spectra were recorded in the UV–vis region for the unirradiated and irradiated films (from 0 to 50 kGy). Optical constants such as refractive index (n), extinction coefficient (K), and complex dielectric constant have been determined, as well as the optical dispersion parameters and high frequency dielectric constants. A large dependence of the fundamental optical constants on the irradiation dose was noticed. On irradiation, a higher refractive index was obtained as compared with that for unirradiated film. The dispersion parameters, such as E ₀ (single‐oscillator energy), E _d (dispersive energy), and M _?1 and M _?3 (moments), are discussed in terms of the single‐oscillator Wemple–DiDomenico model.     

CdxHg(1−x)Te Alloy Colloidal Quantum Dots: Tuning Optical Properties from the Visible to Near‐Infrared by Ion Exchange

The energy gap between valence and conduction levels in colloidal semiconductor quantum dots can be tuned via the nanoparticle diameter when this is comparable to or less than the Bohr radius. In materials such as cadmium mercury telluride, which readily forms a single phase ternary alloy, this quantum confinement tuning can also be augmented by compositional tuning, which brings a further degree of freedom in the bandgap engineering. Here it is shown that compositional control of 2.3 nm diameter Cd_xHg_(1?x)Te nanocrystals by exchange of Hg²⁺ in place of Cd²⁺ ions can be used to tune their optical properties across a technologically useful range, from 500 nm to almost 1200 nm. Data on composition‐dependent changes in the optical properties are provided, including bandgap, extinction coefficient, emission energy and spectral shape, Stokes shift, quantum efficiency, and radiative lifetimes as the exchange process occurs, which are highly relevant for those seeking to use these technologically important QD materials.     

Thermodynamic conditions for formation of single phase in Bi-superconductor thin films

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T_sub, and ozone gas pressures, pO₃. The correlation diagrams of the BSCCO phases appearing against T_sub and pO₃ have been established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 have emerged as stable phases depending on T_sub and pO₃. From these results, the thermodynamic evaluations of ΔH and ΔS, which are related with Gibbs’ free energy change for single Bi2212 or Bi2223 phase have been performed.     

Electrical and optical percolations in PMMA/GNP composite films

Effects of graphene nanoplatelet (GNP) addition on the electrical conductivity and optical absorbance of poly(methyl methacrylate)/graphene nanoplatelet (PMMA/GNP) composite films were studied. Optical absorbance and two point probe resistivity techniques were used to determine the variations of the optical and electrical properties of the composites, respectively. Absorbance intensity, A, and surface resistivity, R_s, of the composite films were monitored as a function of GNP mass fraction (M) at room temperature. Absorbance intensity values of the composites were increased and surface resistivity values were decreased by increasing the content of GNP in the composite. Electrical and optical percolation thresholds of composite films were determined as M_σ = 27.5 wt.% and M_op = 26.6 wt.%, respectively. The conductivity and the optical results were attributed to the classical and site percolation theories, respectively. Optical (β_op) and electrical (β_σ) critical exponents were calculated as 0.40 and 1.71, respectively.