Structure and topography modifications of austenitic steel surfaces after friction in sliding contact

Friction experiments between two austenitic stainless steel (AISI 304L) surfaces in sliding contact were carried out under very low loads in two liquid environments, namely demineralized water and methanol, in order to study the correlation between surface damage (wear and surface topography) and structural modifications (phase formation and microstructure). The particularity of our approach was to perform the tests under Hertzian pressures, which were several orders of magnitude lower than the elastic limit of stainless steel. The structural modifications produced during friction were analysed by X-ray diffraction and transmission electron microscopy and the surface topography was studied by scanning electron microscopy and three-dimensional (3D) profiling. Whatever the experimental conditions investigated, the morphology of the damage observed on both surfaces consisted of very fine, smooth and parallel grooves typical of an abrasive wear process of a ductile material caused by the ploughing action of hard particles. From the beginning of the tests, the transformation of austenite into martensite was observed in the superficial layers and the dominant presence of martensite was identified in the wear debris. These results suggest that, under our experimental conditions, abrasion is the dominant mechanism of material removal. Received: 12 March 2002 / Accepted: 3 May 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +33-5/4949-6692, E-mail: jean.paul.riviere@univ-poitiers.fr     

On the dynamic interaction between moving dislocations

Received: 25 August 1997/Accepted: 23 October 1997     

Atomistic simulation of the point defects in B2-type MoTa alloy

The formation and migration mechanisms of three different point defects (mono-vacancy, anti-site defect and interstitial atom) in B₂-type MoTa alloy have been investigated by combining molecular dynamics (MD) simulation with modified analytic embedded-atom method (MAEAM). From minimization of the formation energy, we find that the anti-site defects Mo_Ta and Ta_Mo are easier to form than Mo and Ta mono-vacancies, while Mo and Ta interstitial atoms are difficult to form in the alloy. In six migration mechanisms of Mo and Ta mono-vacancies, one nearest-neighbor jump (1NNJ) is the most favorable due to its lowest activation and migration energies, but it will cause a disorder in the alloy. One next-nearest-neighbor jump (1NNNJ) and one third-nearest-neighbor jump (1TNNJ) can maintain the ordered property of the alloy but require higher activation and migration energies, so the 1NNNJ and 1TNNJ should be replaced by straight [1 0 0] six nearest-neighbor cyclic jumps (S[1 0 0]6NNCJ) or bent [1 0 0] six nearest-neighbor cyclic jumps (B[1 0 0]6NNCJ) and [1 1 0] six nearest-neighbor cyclic jumps ([1 1 0]6NNCJ), respectively. Although the migrations of Mo and Ta interstitial atoms need much lower energy than Mo and Ta mono-vacancies, they are not main migration mechanisms due to difficult to form in the alloy.     

On the derivation and analysis of the “machine equation” in finite deformations

Received: 23 June 1998/Accepted: 15 July 1998     

A mobile positron-lifetime spectrometer for field applications based on β+-γ coincidence

+ -γ coincidence measurement, which has been applied to in-situ examinations of microstructural evolution processes during the fatigue of copper single crystals, is described. Since no sandwich-type geometry is required, it is applicable to all specimen geometries commonly used in materials testing and to the non-destructive testing of engineering parts in service. As a radioactive source ⁷²Se generates the positron-emitting ⁷²As, which provides two positron spectra with maximum energies of 2.5 MeV and 3.3 MeV and a prompt γ quantum of 835 keV. The positrons emitted in the direction towards the specimen pass through a fast plastic scintillator and produce a scintillation signal, thereby losing about 150 keV of their energy. This signal serves as a start signal for the positron-lifetime measurement and is measured in coincidence with the subsequent 511 keV annihilation quantum. After passage through the plastic scintillator the remaining positron energy is still high enough to penetrate deep into the material and to allow for real bulk examinations. The prompt γ quantum may serve as an on-line control of the stability of the electronic system which will be useful under non-constant service conditions in a proposed field application. Received: 8 January 1997/Accepted: 14 March 1997     

Investigation of the structural transformations in the Al-Li-Cu-Mg (8090) alloy

q =803 K) have been investigated via the Vickers microhardness measurements, scanning electron microscopy and differential scanning calorimetry. On the basis of Kissinger’s analytical equation of the DSC thermograms, the overall activation energies associated with the transformation processes are evaluated. The activation energy associated with the formation of the GPB zones and δ’ phase is determined as 82.433 kJ/mol. Whereas the energy of their dissolution is 139.78 kJ/mol. The activation energy associated with the formation of the S’ phase is determined as 106.88 kJ/mol. In addition, the microstructural examination of the samples after various aging temperatures revealed that the resultant precipitates are intergranular. Received: 27 September 1996/Accepted: 20 January 1997     

Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction

We have studied the effect of the strain relaxation on the band-edge alignments in a Pt/p-Si_1-xGe_x Schottky junction with x=0.14 by internal photoemission spectroscopy and current–voltage measurements. We have shown that the variations in the band-edge alignments can be observed directly by measuring the optical and electrical properties of a simple Schottky junction. The strain in the Si_1-xGe_x layer has been partially relaxed by thermal treatments at two different temperatures. The degree of relaxation and other structural changes have been determined by a high-resolution X-ray diffractometer. Both optical and electrical techniques have shown that the barrier height of the Pt/Si_0.86Ge_0.14 junction increases with the amount of relaxation in the Si_1-xGe_x layer. This shows that the valence-band edge of the Si_1-xGe_x layer moves away from the Fermi level of the Pt/Si_1-xGe_x junction. The band-edge movement results from the increase in the band gap of the Si_1-xGe_x layer after the strain relaxation. This result agrees with the theoretical predictions for the strain-induced effects on the Si_1-xGe_x band structure. Received: 18 October 2000 / Accepted: 19 December 2000 / Published online: 23 March 2001     

Multilayer model of interlayer spacing in graphite intercalation compounds

The elastic deformation of host layers is calculated by constructing a model where the host layers, regarded as continuous two-dimensional elastic sheets, are infinitely stacked and compressible intercalants, represented by harmonic springs, are intercalated into them. If we treat the intercalants as being rigid relative to the soft host layers in the stage-1 graphite intercalation compound, Li_xC₆ (0≤x≤1), the calculated average gallery spacing agrees well with the experiments, without using any adjustable parameter. Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 23 August 2000     

Positron lifetime study of vacancy-type defects in amorphous and polycrystalline nanometer-sized alumina

2 O₃ and nanocrystalline Al₂O₃ specimens. The short-lifetime (170±20 ps), intermediate-lifetime (410±20 ps) and long-lifetime components correspond to three different kinds of defects: monovacancy-like free volumes, microvoids, and larger voids. The appearance of lifetimes in the range 1–5 ns indicates the formation of positronium. The influence of thermal annealing from 873 K to 1373 K on positron lifetime parameters was also analyzed. The components with lifetimes τ₁=170 ps and τ₂=410 ps persisted even after the grains had grown to 100 nm in size, while the long-lifetime component declined significantly when grain sizes exceeded 10 nm. The interface characteristics of polycrystalline nano-Al₂O₃ prepared by the two methods were compared by analyzing the variations of the positron-lifetime parameters with grain growth. Received: 1 April 1997/Accepted: 13 August 1997     

Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance

54 , 2512 (1996)]. The trapping coefficient of single-negative silicon vacancies was also derived. Received: 25 August 1997/Accepted: 27 March 1998     

Surface density oscillations in disordered binary alloys: X-ray reflectivity study of Cu3Au(001)

3 Au(001) surface using Synchrotron radiation and show that the intensity distribution along the specular rod exhibits the same features as in the case of liquid metals which has been discussed in recent literature. The results are discussed within the framework of the distorted wave Born approximation which allows a straightforward easy-to-apply scheme to analyze such reflectivity data in the entire -range including the total external reflection regime. The data analysis gives a direct evidence for an oscillating average density profile which is analoguous to the socalled surface layering at liquid surfaces. The experimental values for the thermal roughness indicate that surface roughness is suppressed in the ordered phase and allowed to softly grow with temperature above the bulk order-disorder phase transition. The presented experimental and theoretical study of X-ray reflectivity from binary alloys demonstrates the potential of this technique for the study of surface roughening, surface layering and surface segregation phenomena at solid and liquid surfaces. Received: 14 August 1996/Accepted: 7 October 1996     

The critical thickness of silicon-germanium layers grown by liquid phase epitaxy

Silicon-germanium layers are grown from metallic solution on (100) and (111) silicon substrates. On (111) Si, coherently strained dislocation-free SiGe layers are obtained with thicknesses larger than predicted by the current models of misfit-induced strain relaxation. A comprehensive characterisation by imaging, diffraction, and analytical electron microscopy techniques is carried out to determine the critical thickness, study the onset of plastic relaxation, and explain the particular growth mechanisms leading to an unexpectedly high thickness of elastically strained SiGe layers. A vertical Ge concentration gradient and the formation of step edges on the layers, where lateral strain relaxes locally, explain the high critical thickness. The model of Matthews and Blakeslee is modified in order to match the experimental observations for solution-grown SiGe layers. Received: 29 July 1999 / Accepted: 29 July 1999 / Published online: 27 October 1999     

Defects in thin film silicon at the transition from amorphous to microcrystalline structure

Defects in thin film silicon with different structure all the way from amorphous to microcrystalline were investigated by electron spin resonance with emphasis on amorphous material prepared close to the transition to crystalline growth. Electron beam irradiation and stepwise annealing is used for reversible variation of the defect density over three orders of magnitude. The electron irradiation enhances mainly the native paramagnetic defects. Additional resonances are found as satellites to the central line, which anneal rapidly at temperatures below 100 °C. These features are most pronounced for the amorphous material prepared close to the transition to crystalline growth. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Estimating the sizes of surface cracks based on Hall element measurements of the leakage magnetic field and a dipole model of a crack

A method is proposed for estimating the sizes of surface cracks in magnetic materials. The method is based on applying a magnetic field, then determining the leakage magnetic field in the vicinity of a crack by moving a Hall element on the surface of the material along one or two scanning lines crossing the crack, and measuring the corresponding Hall voltage distribution. A dipole model of a crack is utilized, in which a surface crack is considered as being full of magnetic dipoles aligned parallel to the applied field, and whose density varies linearly along the depth of the crack. Analytical expressions are derived for the z-component of the intensity of the leakage magnetic field, and for the measured Hall voltage in the vicinity of a crack with an arbitrary cross-section along its long axis when it is perpendicular to the applied field. The crack sizes and the parameters of the distribution of magnetic dipoles along the crack depth are computed by crack inversion, which represents a regression for the Hall voltage distribution. A variable theoretical Hall voltage distribution is fitted to the measured Hall voltage distribution by minimizing the corresponding RMS error, which gives the unknown parameters at the end of the minimization. Hall voltage distributions are measured on ferromagnetic steel samples containing one artificial surface crack. Some crack inversions are performed for estimating the maximum crack depth and the crack width of cracks with rectangular and isosceles triangular cross-sections along the long crack axis. The accuracy of these crack inversions increases by utilizing either Hall voltage distributions measured along only one of the scanning lines, instead of along both scanning lines, or by using more precisely measured Hall voltage distributions. The fast and accurate estimation of the maximum crack depth and the crack width by such crack inversions could be important for pipeline inspection. Other crack inversions are performed for determining the cross-section along the long axis of the investigated cracks with satisfactory results. Received: 2 March 2001 / Accepted: 10 April 2001 / Published online: 25 July 2001     

Structural study on the crystallization behavior of Sb3Te2 alloy for phase change memory

The atomic crystal structure of the Sb₃Te₂ binary alloy has been investigated with high‐resolution transmission electron microscopy (HR‐TEM) and fast Fourier transform patterns. As a result, there is inconsistency between the previous theoretical model and the experimental result. But, from the calculations of lattice parameters and the number of layers in the unit cell, it is found that the Sb₃Te₂ alloy can be crystallized into the Sb₂Te structure with P m1 space group and the difference between stacking sequences of the Sb₃Te₂ and the Sb₂Te structures has been discussed with the proposed atomic arrangement model of unit cells. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Theory of solitary plastic waves

The paper deals with the dislocation dynamics of coherently propagating modes of plastic shear (Lüders bands) in single crystals oriented for single slip, in terms of a generalized Fisher-Kolmogorov equation. The role of (1) cross-slip and (2) non-axial stresses as propagation mechnisms is investigated, and the problem of propagation velocity selection is addressed. The phenomenon of slip band clustering which was observed in sufficiently thick tensile specimens is traced back to a propagative instability owing to non-axial stresses.     

Tomographic study of the three-dimensional distribution of a high-fluence implant in a polymer

6 Li⁺ ions were implanted into PMMA at high flux up to fluences of 1×10¹⁵ cm^-2 under angles of 0° to 70° towards the surface normal. The Li depth distributions were determined by means of neutron depth profiling, and compared with theoretical simulations. The three-dimensional Li distribution was reconstructed from the one-dimensional depth profiles by means of a tomographic technique. It turned out that the measured Li depth distributions can be described by a superposition of Gaussian and exponential functions. This points at considerable Li mobility during or after the ion implantation, with trapping in unsaturable traps in the ion-irradiated region which roughly follow the electronic energy transfer distribution. The Li redistribution is more pronounced along the track direction than transversely to it. The normalized Li distributions in various implantation directions were fed into our tomographic program to reconstruct the three-dimensional distribution of the deposited lithium. As expected, the lithium preferentially distributes along the ion tracks. This work is another hint that mobility of implanted ions in solids does not proceed isotropically, but is strongly influenced by the radiation-damage distributions. Received: 11 May 1998 / Accepted: 9 September 1998 / Published online: 24 February 1999     

Systematic theoretical investigations for contribution of lattice constraint to novel atomic arrangements in alloy semiconductor thin films

The atomic arrangements in zinc blende structured GaN_xAs_1−x thin films coherently grown on V-grooved substrates are theoretically investigated using empirical interatomic potentials and Monte Carlo simulation. The resultant atomic arrangements in GaN_xAs_1−x strongly depend on concentration x and substrate lattice parameter a_sub. Surface segregation of As or N is mainly found in GaN_xAs_1−x with large lattice mismatch to the substrate. On the other hand, the novel atomic arrangements such as layered segregation or ordered structure are found in GaN_xAs_1−x at the specific region such as (x, a_sub) = (0.5, 5.3), (0.3, 5.3), and (0.3, 5.1). This specific region corresponds to that with negative excess energy and with sufficient N and As atoms remaining in thin film layers even after their surface segregation. The formation of the novel atomic arrangements is discussed in terms of bond lengths in the surface layers. These results suggest that various novel atomic arrangements in alloy semiconductor thin films appear depending on x and a_sub which control degree of lattice constraint.     

The stability of homogeneous microstructure development under cascade-damage conditions

The development of microstructure, under cascade-damage conditions, in regions far away from any major sink is considered. Within the mean-field theory, a homogeneous distribution of point defects and their clusters is a pre-imposed artificial constraint on the kinetic system. The resulting excessive recombination of the vacancies and interstitials at a high density of accumulated point-defect clusters dictates a low rate of void growth. Considerations beyond the mean-field theory, by taking into account the concentration fluctuations of both the point defects and their clusters, relax the restriction of the homogeneous distribution. In this paper, we consider a system without pre-existing sinks, except the void nuclei, in which vacancies, interstitials and their clusters are continuously produced. Taking into account the mobility of small clusters and the stochastic fluctuations of the point-defect fluxes, a kinetic theory is formulated from first principles. It is rigorously shown that through the stochastic fluctuations, and the positive-feedback action of the mobility of the small clusters on the interstitial concentration, the homogeneous interstitial distribution is unstable at temperatures above stage V, leading to the formation of a spatially heterogeneous microstructure in pure metals at low irradiation doses. The characteristics of the microstructure evolution and void swelling, predicted from the theory, are found to be in good agreement with the experimental results. Received: 17 March 2000 / Accepted: 17 October 2000 / Published online: 25 July 2001