Effect of ambient temperature on electrical properties of nanostructure n-ZnO/p-Si heterojunction diode

The nanostructure n-ZnO/p-Si heterojunction diode was fabricated by sol–gel method. The structural and morphological properties of the nanostructure ZnO film have been investigated. The X-ray diffraction spectra indicated that the films are of polycrystalline nature. The scanning electron microscopy images indicate that the surface morphology of ZnO film is almost homogeneous and the ZnO film is consisted of the circular formed with coming together of the nanoparticles. The electrical characterization of nanostructure n-ZnO/p-Si heterojunction diode has been investigated by current–voltage characteristics. The ideality factor (n) of the diode was found for different ambient temperatures and the obtained 6.40 value for 296 K is higher than unity due to the interface states between the two semiconductor materials and series resistance. The values of n increased with decreasing ambient temperature. The reverse current of the diode increased with illumination intensity of 100 mW cm⁻² and the diode gave a maximum open circuit voltage V_oc of 0.19 V and short-circuits current I_sc of 8.03 × 10⁻⁸ A.     

The fabrication and photoresponse of ZnO/diamond film heterojunction diode

Boron-doped p-type freestanding diamond (FSD) films were prepared by hot filament chemical vapor deposition (HFCVD) method. The effect of B/C ratio on the electrical properties of FSD films was investigated by Hall effect measurement system. A ZnO/diamond heterojunction diode was fabricated successfully by depositing n-type ZnO films on the p-type FSD substrate by radio-frequency (RF) magnetron sputtering method. The wavelength dependent photoresponse properties of the heterojunction diode were investigated by studying the effect of light illumination on current-voltage (I-V) characteristics and photocurrent spectra at room temperature. The diode showed a significant discrimination between ultraviolet (UV) and the visible light under reverse bias conditions and photoresponse of the device was approximately linear related to the increasing reverse bias voltages.     

Electronic and interface state density distribution properties of Ag/p-Si Schottky diode

Electronic and interface state distribution properties of Ag/p-Si Schottky diode have been investigated. The diode indicates non-ideal current-voltage behavior with an ideality factor greater than unity. The capacitance-voltage (C-V) characteristic is linear in reverse bias indicating rectification behavior and charge density within depletion layer is uniform. From I-V and C-V characteristics, junction parameters such as diode ideality factor and barrier height were found as 1.66 and ?_B(I-V) = 0.84 eV (?_B(C-V) = 0.90 eV), respectively. The interface state density N_ss and relaxation time τ of the Schottky diode were determined by means of Schottky capacitance spectroscopy method. The results show the presence of thin interfacial layer between the metal and semiconductor.     

Phosphor-converted light-emitting diode based on ZnO-based heterojunction

A phosphor-converted light-emitting diode (LED) was realized by coating BaMg₂Al₁₆O₂₇:Eu²⁺·Mn²⁺ and (SrCaPO₄)·B₂O₃:Eu²⁺·Na⁺ phosphors onto an n-ZnO/i-MgO/p-GaN heterojunction diode. Two emission bands at around 450 and 520 nm were observed in the phosphor-converted LED under the injection of continuous current. By analyzing the optical properties of the heterojunction diode and phosphors, it is concluded that the emission at 450 nm comes from (SrCaPO₄)·B₂O₃:Eu²⁺·Na⁺ phosphor, while the one at 520 nm comes from BaMg₂Al₁₆O₂₇:Eu²⁺·Mn²⁺ phosphor under the excitation of the light emitted from the n-ZnO/i-MgO/p-GaN heterojunction diode. The results reported in this paper may provide a route to ZnO-based phosphor-converted LEDs for future lighting or displaying purpose.     

Electronic conduction properties of Au/C60/p-Si and C60/Au/p-Si sandwich structures: I–V and transducer characteristics

Gold-fullerite [C₆₀]-silicon (p-type) sandwich structures have been fabricated in order to investigate intrinsic cross-sectional and planar electronic conductive properties, in particular the C₆₀/p-Si p–n heterojunction. The turn-on voltage of this p–n heterojunction lies in the range 0.25–0.27 V. The I–V characteristics of the Au/C₆₀/p-Si structure are mostly defined by the bulk specific resistance of the fullerite crystal film itself (6×10⁷ Ω cm). I–V curves in the C₆₀/Au/p-Si structure are shown to be ohmic. Au/C₆₀/p-Si sandwiches irradiated with swift (300 MeV) heavy ions, (⁸⁴Kr¹⁴⁺) to a total fluence 10¹⁰ ion/cm² yield structures which are sensitive to ambient air pressure, specifically in the case of a transverse contact configuration, and if one of the contacts is located on the irradiated part of the fullerite film. The sandwich-structure sensitivity to pressure is 5×10⁻⁶ Pa⁻¹. This exceeds the sensitivity of conventional silicon pressure transducers by almost three orders of magnitude.     

Electrical characterization of p-ZnO/p-Si heterojunction

Nitrogen doped p-ZnO film, with urea as nitrogen source, is fabricated by pulsed laser deposition on well-cleaned p-type (1 0 0) Si substrates. The structural and electrical properties of the p-p heterojunction are investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. It shows a diode-like behavior with turn-on voltage of 0.5 V. The ideality factor η determined by applying positive potential in p-ZnO and negative potential along p-Si is found to be 6. Such a high value of η is attributed to lattice mismatch between ZnO and Si. and other factors responsible are thermoionic emission, minority carrier injection and recombination. C-V results indicate an abrupt interface and a band bending of 0.9 V in the silicon. Heterojunction band diagram for p-ZnO/p-Si is proposed.     

具有异质结的富勒烯C60/酞菁纳米复合材料的可见光响应光催化应用

通过再沉淀法制备了富勒烯C60/酞菁的复合纳米微粒。这种复合纳米微粒由于C60分子和酞菁分子间的-相互作用而具有电子给体-受体（donor-acceptor）结构,而且这种微粒的尺寸可通过选择再沉淀过程中使用的溶剂来进行控制。此外,这种微粒与Nafion结合后,表现出去除三甲胺的光催化性能,而且其光催化活性优于C60微粒/Nafion或酞菁微粒/Nafion复合物。该结果表明电子给体-受体结构可通过促进有机半导体的电荷分离来增强光催化的性能,从而揭示了一种新颖的基于电子给体-受体结构的有机光催化剂。     

Direct-current piezoelectric nanogenerator based on p-Si/n-ZnO heterojunction

We have demonstrated a direct-current piezoelectric nanogenerator with a novel structure of p-Si/n-ZnO heterojunction. Low resistance p-type silicon chip, with a large number of nano-concaves on the surface, was utilized as a top electrode over the n-type ZnO nanorod arrays, forming a heterojunction nanogenerator. Piezoelectric current, with average singles about 1 nA, was generated from the heterojunction nanogenerator. Rectifying behavior of the p-Si/n-ZnO heterojunction in our piezoelectric nanogenerator was analyzed from the I–V curve and the energy band structure. Furthermore, output tests of reverse connection and two devices parallel connection clearly eliminate the effects from measurement system errors and confirms that the current is generated from the nanogenerator. Our research presents an approach to integrating a new type of nanogenerator using the silicon chip directly, without expensive Pt or Au coated on the electrode surfaces.     

Photoemission intensity oscillations in the valence bands of C70 film

We have measured and analyzed the photoemission spectra (PES) of a C₇₀ film in the photon energy region from 13.4 eV to 98.4 eV. The photoelectron intensities of two C 2p π-derived features (denoted by A and B) oscillate regularly in the whole energy region with some fine structures below ∼30 eV. To obtain the detailed information of the oscillations, we have developed a sophisticated but practical procedure for intensity calculation. The procedure consists of two core concepts. The first is ascribing the PES features to their corresponding molecular orbitals with the help of density functional calculations. The second is a background subtraction algorithm. With this procedure, we obtained the oscillating behavior for individual features (A and B), which is by and large consistent with the predictions based on the spherical symmetric approximation although C₇₀ has the ellipsoidal shape. Owing to the solid state effect, the oscillating amplitudes of the A/B intensity ratios are smaller than those of gas phase C₇₀, but an orbital shift reported recently was not observed on our sample. The oscillating curve of a deeper feature, which consists of both σ and π states, are also reported.     

Scanning tunneling microscopy of surface-adsorbed fullerenes: C60, C70, and C84

Scanning tunneling microscopy (STM) is used to characterize partial monolayers of C₆₀, C₇₀, and C₈₄ adsorbed on the Au(1 1 1) surface at room temperature and under ambient conditions. A high degree of structural polymorphism is observed for monolayers of each of these fullerenes. For C₆₀, three lattice packings are observed, including a previously unreported 7 × 7 R21.8° structure that is stabilized by adjacent surface step defects. For C₇₀, two lattice packings are observed, and analysis of molecular features in STM images allows molecular binding geometry to be determined. In one of the two observed lattice structures, C₇₀ molecules align their long axis along the surface normal, while in the other, molecules align parallel to the surface and along a gold lattice direction. The parallel geometry is also preferred for isolated and loosely packed molecules on the surface. C₈₄ exhibits a large number of lattice orientations and no long-range order, and likely binds incommensurately on Au(1 1 1). Time series of images of partial C₇₀ monolayers show progressive surface modification as a result of perturbation by the STM tip; this is in contrast to the behavior of C₆₀, where alterations in surface structure at room temperature are thermally driven.     

C60/C70晶体形貌的研究

采用电弧法制备了C₆₀/C₇₀,并用光学显微镜、扫描电子显微镜和透射电子显微镜对其结晶形貌进行了研究。研究结果表明,C₆₀/C₇₀晶体依平面状长大方式生长,最终长成规则的四边形,五边形和六边形晶体。 关键词：     

Electronic and optical properties of CuGaS2: First-principles calculations

Electronic structure and optical properties of CuGaS₂ are calculated using the full potential linearized augmented plane wave plus local orbitals method. The calculated equilibrium lattice is in reasonable agreement with the experimental data. The electronic structures indicate that CuGaS₂ is a semiconductor with a direct bandgap of 0.81802 eV. Furthermore, other experiments and theory also show that this material has a direct bandgap. It is noted that there is quite strong hybridization between Ga 3d and S 3s orbitals, which belongs to the (GaS₂)⁻. The complex dielectric functions are calculated, which are in good agreement with the available experimental results.     

Electronic properties of the organic semiconductor hetero-interface CuPc/C60

We present a study of the electronic properties of the interface between the well-established molecular organic semiconductor copper phthalocyanine (CuPc) and the fullerite C₆₀ using photoelectron spectroscopy and the Kelvin-probe (KP) method. Upon deposition of CuPc on C₆₀, we found interfacial shifts of the vacuum level indicating the formation of a dipole layer, while band bending is found to be negligible. The interface dipole of 0.5 eV measured with KP is close to the difference between the work functions of bulk CuPc and C₆₀. No evidence for a chemical interaction at the interface is concluded from the absence of additional features in the core-level spectra at the earliest stages of deposition. The energy-level alignment diagram at the CuPc/C₆₀ interface is derived.     

CuInSe2电子结构与光学性质的第一性原理计算

从头计算了CuInSe₂(CIS)体相的性质，参数设定和性质计算都基于密度泛函理论，交换相关能采用GGA，泛函形式为PBE，原子间相互作用的描述采用超软赝势.计算发现CIS中存在共价键，是一种非典型的离子型晶体，在整个晶体内存在共用电子对，Cu原子和Se原子的作用大于Se原子和In原子.CIS是一种典型的直接带隙半导体，计算得到了光学性质的各项参数，包括折射指数和反射率，吸收系数以及介电函数与光子能量的关系，发现CIS的主要光吸收峰有6个，分别为：3.1，7.6，10.0，16.1，19.0，21.0eV，理论上最强吸收峰在紫外光区.     

C20分子异构体的电子态

使用量子化学从头计算方法优化了C₂₀分子三种异构体（环形、碗形和笼形）的单重和三重电子态几何结构。从优化的几何结构出发，由二阶微扰（MP2）方法得到的单点能给出了一个不符合Hund法则的结果，也就是三种异构体的能量都是单重电子态的最低。使用UHF波函数给出了三种异构体的总电荷密度和静电势，结果显示在笼形和碗形结构的中心区域存在负电荷。最后，本文分析了环形结构的成键特征。     

The oxidation of fullerene [C70] with various oxidants by ultrasonication

The reaction of C₇₀ by ultrasonication with various oxidants such as 3-chloroperoxy benzoic acid (Fluka 99%), 4-methyl morpholine N-oxide (Aldrich 97%), chromium (VI) oxide (Aldrich 99.9%), and oxone^® monopersulfate compound, at room temperature causes the oxidation of fullerene [C₇₀(O)_n] (n=1–2 or n=1). The FAB-MS, UV–visible, FT-IR spectra, and HPLC analysis confirmed that products of fullerene oxidation are [C₇₀(O)_n] (n=1–2 or n=1).     

Improved ultraviolet/visible rejection ratio using MgZnO/SiO2/n-Si heterojunction photodetectors

We report on the fabrication and characterization of MgZnO/SiO₂/n-Si structured photodetectors, for the visible-blind monitoring. The current-voltage curve of the heterojunction shows obvious rectifying behaviors. In the visible range, the photocurrent decreased rapidly. In additionally, the ultraviolet/visible rejection ratio (R340 nm/R500 nm) was about four orders of magnitude at reverse bias, indicating a high degree of visible blindness. The key role of the insulating SiO₂ layer will be discussed in terms of the band diagrams of the heterojunctions.     

The influence of substrate temperature on electrical properties of Cu/CdS/SnO2 Schottky diode

Polycrystalline CdS samples on the SnO₂ coated glass substrate were obtained by vacuum evaporation method at low substrate temperatures (T_S=200 and 300 K) instead of the commonly used vacuum evaporation at high substrate temperatures (T_S>300 K). X-ray diffraction studies showed that the textures of the films are hexagonal with a strong (0 0 2) preferred direction. Circular Cu contacts were deposited on the upper surface of the CdS thin films at 200 K by vacuum evaporation. The effects of low substrate temperature on the current-voltage (I-V) characteristics of the Cu/CdS/SnO₂ structure were investigated in the temperature range 100-300 K. The Cu/CdS (at 300 K)/SnO₂ structure shows exponential current-voltage variations. However, I-V characteristics of the Cu/CdS (at 200 K)/SnO₂ structure deviate from exponential behavior due to high series resistance. The diodes show non-ideal I-V behavior with an ideality factor greater than unity. The results indicate that the current transport mechanism in the Cu/CdS (at 300 K)/SnO₂ structure in the whole temperature range is performed by tunneling with E₀₀=143 meV. However, the current transport mechanism in the Cu/CdS (at 200 K)/SnO₂ structure is tunneling in the range 200-300 K with E₀₀=82 meV.     

富勒烯C20分子器件的电子结构和传导特性

运用基于密度泛函理论和基于非平衡格林函数的第一性原理方法研究了富勒烯C₂₀分子及连接电极构成的C₂₀分子器件的电子结构及电子输运性质.构建了三个基于C₂₀分子的嵌入K和Si原子的电子输运系统,并得到了电子透射谱和分子轨道分布.分析了三种器件的电子结构和输运性质的产生原因,说明C₂₀分子器件的电子传导主要集中在外壳.在C₂₀分子空笼中嵌入K和Si原子后,其电子输运仍然主要集中于富勒烯C₂₀的外壳. 关键词： 20分子')" href="#">富勒烯C₂₀分子 电子结构 电子传导     

Synthesis of the wheat-like CdSe/CdTe thin film heterojunction and their photovoltaic applications

We report on the fabrication of wheat-like CdSe/CdTe thin film heterojunction solar cells made using a simple electrochemical deposition method and close-spaced sublimation technology on indium tin oxide (ITO) substrates. Structural, optical, and electrical properties of the wheat-like CdSe/CdTe thin film junctions were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), energy dispersive spectrometry (EDS), ultraviolet–visible (UV–vis) absorption spectrum and Keithley 2400 analysis. A significant red-shift of the absorption edge is observed in this heterojunction. The heterostructure is composed of the wheat-like CdSe array and CdTe thin film, showing optical properties typical of type II heterostructures that are suited for photovoltaic applications. A photocurrent density of 8.34 mA/cm² has been obtained under visible light illumination of 100 mW/cm². This study demonstrates that the electrochemical deposition and the close-spaced sublimation technology, which are easily adapted to other chemical systems, are promising techniques for large-scale fabrication of low-cost heterojunction solar cells.