Bound States and the Third Harmonic Generation in an Electric Field Biased Semi-parabolic Quantum Well

Within the framework of the compact density matrix approach, the third-harmonic generation (THG) in an electric-field-biased semi-parabolic quantum well (QW) has been deduced and investigated. Via variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field have also been obtained and discussed. Numerical results on typical GaAs material reveal that, electric fields and confined potential frequency of semi-parabolic QW have obvious influences on the energy levels of electronic states and the THG in the semi-parabolic QW systems.     

施加电场的半抛物量子阱中的电光效应

利用量子力学中的紧致密度矩阵方法，研究了施加电场的半抛物量子阱中的电光效应。通过位移谐振子变换，得到了系统中的电子态的精确解。对典型的GaAs材料进行数值计算的结果表明，随着电场强度的增加，电光效应系数几乎线性随之增加；但是随着半抛物量子阱受限势频率的增加，电光效应系数单调地减小；而且在同样的电场强度及抛物束缚势频率作用下，半抛物量子阱模型中的电光效应系数比抛物量子阱模型中的值大两个数量级，这是由于我们所选模型本身的非对称性以及电场进一步使这种非对称性增强的缘故。     

Optical properties of AlxGa1−xAs/GaAs Woods–Saxon quantum well in the presence of hydrostatic pressure and applied electric field

The third harmonic generation (THG), linear and nonlinear optical absorption coefficients (OACs), and refractive index changes (RICs) are investigated in a Woods–Saxon quantum well (QW) modulated by the hydrostatic pressure and applied electric field. The effect of non-uniform aluminum doping (position-dependent effective mass (PDEM)) on the mass of the system is discussed, and further to explore the influence of PDEM on the nonlinear THG, OACs, and RICs of the Woods–Saxon QW. These nonlinear optical properties above are obtained using the compact-density matrix formalism. The electron states in a Woods–Saxon QW under the constant effective mass (CEM) and PDEM are calculated by solving the Schrödinger equation via the finite difference technique. The contributions from competing effects of the hydrostatic pressure and applied electric field to the nonlinear optical properties with CEM and PDEM are reported, as well as the comparison with each other. The observations reveal that the regulation of external fields and the influence of PDEM play an important role in the photoelectric properties of QW.     

Studies on the Second-Order Nonlinear Optical Properties of Parabolic and Semi-parabolic Quantum Wells with Applied Electric Fields

Within the framework of compact density matrix approach and iterative procedure, a detailed procedure for the calculation of the second-harmonic generation (SHG) susceptibility tensor is given in the electric-field-biased parabolic and semi-parabolic quantum wells (QWs). The simple analytical formula for the SHG susceptibility in the systems is also deduced. Numerical results on typical AlGaAs/GaAs materials show that, for the same effective width, the SHG susceptibility in semi-parabolic QW is larger than that in parabolic QW due to the self-asymmetry of the semi-parabolic QW, and the applied electric field can make the SHG susceptibilities in both systems enhance remarkably. Moreover, the SHG susceptibility is also related to the parabolic confinement frequency and the relaxation rate of the systems.     

施加电场的半抛物量子阱中的二阶非线性光学极化率

利用量子力学中的紧致密度矩阵方法,研究了施加电场的半抛物量子阱中的二阶非线性光学极化率(光整流系数),得到了此系统的光整流系数的解析表达式.数值计算的结果表明,随着电场强度的增加,光整流系数几乎线性随之增加,而且在同样的电场强度及抛物束缚势频率作用下,半抛物量子阱模型中的光整流系数比抛物量子阱模型中的值大一个数量级,这是由于我们所选模型本身的非对称性以及电场进一步使这种非对称性增强的缘故.     

Static and dynamic study of magnetic properties in FeNi film on flexible substrate, effect of applied stresses

The influence of an external electric field on the binding energies of the ground state and excited states with the third-harmonic-generation (THG) coefficient for spherical quantum dot (QD) with parabolic confinement is investigated theoretically. The energy levels and wave functions of electronic states in the QDs are calculated using by variational method within the effective-mass approximation. The numerical results demonstrate that the THG coefficient very sensitively depends on the magnitude of the electric field and the radius of the QDs. In addition, the THG coefficient also depends on the relaxation rate of the spherical QD with parabolic confinement and the position of impurity.     

Dependence of third-order nonlinear susceptibility on strain induced piezoelectric field in InxGa1-xN/GaN quantum well

The third-order susceptibility of InxGa1-xN/GaN quantum well (QW) has been investigated by taking into account the strain-induced piezoelectric (PZ) field, and the effective-mass SchrSdinger equation is solved numerically. It is shovn that the third-order susceptibility for third harmonic generation (THG)of InxGa1-x,N/GaN QW is related to indium content in QW and the intensity of the PZ field. The characteristics ofX(3)THG(-3ω,(3) ω, ω,ω) as the function of the wavelength of incident beam, well width and indium content, have been analyzed.     

Donor impurity states in direct-gap SiGe quantum well: Applied electric field and quantum size effects

Within the framework of the effective-mass approximation and variational procedure, competition effects between applied electric field and quantum size on donor impurity states in the direct-gap Ge/SiGe quantum well (QW) have been investigated theoretically. Numerical results show that the applied electric field (quantum size) dominates electron and impurity states in direct-gap Ge/SiGe QW with large (small) well width. Moreover, the competition effects also induce that the donor binding energies show obviously different behaviors with respect to electric field in the QW with different well widths. In particular, when the impurity is located at left boundary of the QW, the donor binding energy is insensitive to the variation of well width when well width is large for any electric field case.     

Angle-resolved photoemission study for double Ag nanofilm structures

We have carried out an angle-resolved photoemission study for Ag/Cu/Ag/Cu(1 1 1) system in order to investigate the electronic coupling between the two quantum-well (QW) states in the double Ag nanofilm structures. It is found that the outer nanofilm thickness dependence of QW state in double Ag nanofilm structures can be explained as the electronic coupling through the thin Cu barrier layer between the QW states in the inner and outer Ag nanofilms. It is also found that the coupling strength depends on the Cu barrier thickness. From these results, we discuss the electronic coupling between the two QW states in the double Ag nanofilm structures.     

Calculation of Linear and Nonlinear Intersubband Optical Absorptions in Electric-Field-Biased Semiparabolic Quantum Wells

By using the compact density matrix approach and iterative procedure, a detailed procedure for the calculation of the linear and nonlinear intersubband optical absorption coefficients is given in the electric-field-biased semi-parabolic quantum wells (QWs). The simple analytical formulas for the linear and nonlinear optical absorption coefficients in the systems are also deduced. Numerical result on typical GaAs materials shows that, the linear and nonlinear optical absorption coefficients sensitively depend on the applied electric field and the confined potential frequency of the semiparabolic QW systems as well as the incident optics beam intensity.     

Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well

Based on the effective-mass approximation, the competition effects between the laser field and applied electric field on impurity states have been investigated variationally in the ZB GaN/AlGaN quantum well (QW). Numerical results show that for any laser field, the electric field makes the donor binding energy present asymmetric distribution with respect to the center of the QW. Moreover, when the laser field is weak, the electric field effects are obvious on the donor binding energy; however, the electric field effects are insensitive to the variation of donor binding energy in the ZB GaN/AlGaN QW with strong laser field.     

Field-induced expansion deformation in Pb islands on Cu(111): evidence from energy shift of empty quantum-well states

We use scanning tunneling microscopy and spectroscopy to measure the energy shift of empty quantum-well (QW) states in Pb islands on the Cu(111) surface. It is found that, with an increase of the electric field, the behavior of the energy shift can be grouped into two different modes for most QW states. In the first mode, the state energy moves toward high energy monotonically. In the second mode, the state energy shifts to a lower energy initially and then turns around to a higher energy. Moreover, we have observed that the QW states of higher energy behave in preference to the first mode, but they gradually change to the second mode as the Pb island becomes thicker. This thickness-dependent behavior reflects the existence of local expansion in the Pb islands, due to the electric field, and that the expansion is larger for a thicker island. QW states can thus be used for studying the localized lattice deformation in the nanometer scale.     

施加电场的半抛物量子阱中束缚态的能级结构

采用位移谐振子与数值求解相结合的方法,研究和讨论了施加电场的半抛物量子阱中束缚态的能级结构,得到了体系的本征能量与本征函数的表达式．数值结果显示,随着电场强度的增大,束缚态的能量几乎线性地下降,电场对半抛物束缚势频率较低的系统以及系统的高能级的影响较大,相邻能级间隔也随着电场强度的增大而减小,这与施加电场的抛物量子阱中的情况明显不同．     

An exciton in a quantum well in the presence of crossed electric and magnetic fields

An analytical approach to the problem of the Wannier–Mott exciton in a semiconductor quantum well (QW) in the presence of external magnetic and electric fields is developed. The magnetic field is taken to lie in the heteroplanes while the electric field is directed perpendicular to the heteroplanes. Explicit dependencies of the energy levels and wave-functions of the exciton on the magnitudes of the fields for a wide range of the width of the QW are obtained. For the narrow QW, the results are valid for arbitrary electron and hole effective masses. In the case of intermediate and wide QWs, the adiabatic approximation implying the extreme difference of the electron and hole masses is used. In the intermediate QW, the states of the relative motion are the standard Coulomb states affected by the external fields while the states of the centre of mass are the size-quantized states in the QW. We focus particularly on the delocalized states caused by the external electric field and the motion of the excitons centre of mass in the magnetic field. These states are localized far away from the Coulomb centre. A strong influence of the boundaries of the wide QW on the delocalized exciton states is found to occur. Estimates of the expected values are made using typical parameters associated with GaAs QW.     

Optical properties of narrow high quality GaAs/AlGaAs quantum wells grown by MOVPE

We report optical characterization of high quality quantum well (QW) structures grown by metal-organic vapour-phase epitaxy (MOVPE). Thin QW layers of GaAs of thicknesses between 20 Å and 80 Å inserted between Al_0.36Ga_0.64 As confining layers as well as nominally 20 Å QW's in Al_xGa_1−xAs with varying x have been studied. Exciton confinement energies exceeding 250 meV and a FWHM of 6 meV for the thinnest QW have been observed. The photoluminescence (PL) data allows the observation of monolayer fluctuations in the QW widths and indicates an interface abruptness of about one atomic layer. Photoluminescence excitation spectroscopy allows electronic excited states to be seen.     

Tuning third harmonic generation of impurity doped quantum dots in the presence of Gaussian white noise

We perform a broad exploration of profiles of third harmonic generation (THG) susceptibility of impurity doped quantum dots (QDs) in the presence and absence of noise. We have invoked Gaussian white noise in the present study. A Gaussian impurity has been introduced into the QD. Noise has been applied to the system additively and multiplicatively. A perpendicular magnetic field emerges out as a confinement source and a static external electric field has been applied. The THG profiles have been pursued as a function of incident photon energy when several important parameters such as electric field strength, magnetic field strength, confinement energy, dopant location, Al concentration, dopant potential, relaxation time and noise strength assume different values. Moreover, the role of the pathway through which noise is applied (additive/multiplicative) on the THG profiles has also been deciphered. The THG profiles are found to be decorated with interesting observations such as shift of THG peak position and maximization/minimization of THG peak intensity. Presence of noise alters the characteristics of THG profiles and sometimes enhances the THG peak intensity. Furthermore, the mode of application of noise (additive/multiplicative) also regulates the THG profiles in a few occasions in contrasting manners. The observations highlight the possible scope of tuning the THG coefficient of doped QD systems in the presence of noise and bears tremendous technological importance.     

Effects of hydrostatic pressure and temperature on the nonlinear optical properties of semiparabolic plus semi-inverse squared quantum wells

In this study, the effects of hydrostatic pressure and temperature on nonlinear optical rectification(OR), second-harmonic generation(SHG), third-harmonic generation(THG) and the linear,nonlinear, and total optical absorption coefficients(OACs) of a semiparabolic plus semi-inverse squared quantum well(QW) are theoretically investigated. The results show that hydrostatic pressure and temperature have significant effects on the optical properties of semiparabolic plus semi-inverse squared QWs, and that the energy levels and magnitudes of the resonant peaks of OR, SHG, THG, and the total OACs vary according to the shape of the limiting potential, the hydrostatic pressure, and the temperature. It is easily seen that the peak positions of the resonant peaks of OR, SHG, THG, and the total OACs in the semiparabolic plus semi-inverse squared QW show a red shift with increasing hydrostatic pressure, but a blue shift with increasing temperature. Therefore, the magnitude and position of the resonant peaks of OR, SHG, THG,and the total OACs can be adjusted by changing the hydrostatic pressure and the temperature,which promise a new degree of freedom in the tunability of various electro-optical devices.     

Exciton states in wurtzite InGaN/GaN quantum wells: Strong built-in electric field and interface optical-phonon effects

Considering the strong built-in electric field (BEF) effects and large exciton–phonon interactions, we investigate the exciton states confined in an InGaN/GaN single quantum well (QW) by using the Lee–Low–Pines variational method. We find that the exciton state modification caused by the exciton–phonon interactions is remarkable. The exciton energy shift due to exciton–phonon interactions increases monotonically if the well width increases. With increasing the In fraction, the exciton energy shift firstly increases to a maximum, then decreases. The BEF has a significant influence on the exciton states in a QW with large well width. The physical reasons have been analyzed in detail. Good agreement for the zero-phonon peak energies and the Huang–Rhys factor has been obtained between our numerical results and the corresponding experimental measurements.     

Calculation of Binding Energies of the Ground and Excited States of a Donor in Quantum Wells: A Functional Variational Approach

The calculations of the ground and a few low-lying excited states of impurity in the quantum wells (QW's) are presented by making use of a functional variational approach. A new trial wave function is proposed. It is taken by the product of the exact subband state in the Q W and the state of two-dimensional (2D) hydrogenic-like donor with an effective charge distribution along the z-direction (perpendicular to the well interfaces). The variation of binding energies of the donor states in the QW with the well-width is calculated. The calculated result is compared with that obtained by the earlier variational method. The functional variational approach proposed here has some benefits such as, to bring a great flexibility and to apply to a relatively large species of trial wave functions.     

Kinetic limitations in electronic growth of Ag films on Fe(100)

Quantum well (QW) resonances are identified in Ag films on an Fe(100) surface and are used in low energy electron microscopy to monitor film morphology during annealing and growth. We find that Ag films thermally decompose to thicknesses that are stabilized by QW states at the Gamma point. Novel growth morphologies are also observed that highlight the competition between kinetic limitations and the QW state energetics that promote electronic growth. These combined observations help to explain the unusual bifurcation mode of thermal decomposition that was reported previously for this system.