Up and down conversion fluorescence studies on combustion synthesized Yb/Yb: MO-Al2O3 (M=Ca, Sr and Ba) phosphors

The ytterbium ions doped MO-Al₂O₃ (M=Ca, Sr and Ba) phosphors have been synthesized through combustion technique and their up and down conversion fluorescence properties have been studied and compared. The samples were calcinated at different temperatures and their FTIR and XRD spectra have shown a close relationship. With 976 nm excitation all these phosphors show cooperative upconversion emission at 488 nm from the pairs of two Yb³⁺ ions along with an unexpected broad upconversion band in the blue green region and has been assigned to arise from the defect centers. Contrary to this upconversion emission, calcium aluminate phosphor exhibits bright and very broad down-conversion fluorescence (FWHM≈160 nm) upon UV (266 nm) excitation due to Yb²⁺ ions. The inter-conversion between the 3+ and 2+ valence states of Yb ion has been observed on calcinations of samples in open atmosphere and has been correlated to the emission properties. The Yb²⁺ ions containing calcium aluminate phosphor has been found suitable for producing broad band light in the visible region (white light). Lifetime of the emitting states of Yb³⁺ and Yb²⁺ ions have also been measured and discussed.     

Pulsed laser deposited Er,Yb:YVO4 waveguiding films on MgO/Si substrates

Erbium, and erbium and ytterbium co-doped YVO₄ waveguiding films were deposited on MgO/Si substrates by PLD. The samples were post-annealed at two different temperatures in air atmosphere. The influence on the crystalline structure and waveguiding properties of the films at these annealing temperatures for two dopant concentrations was investigated. Layers annealed up to 900 °C are polycrystalline. The dominant fraction of YVO₄ crystallites exhibited preferred orientation of the (0 0 1) zone axes parallel to the substrate surface. The polycrystalline samples show difference in the refractive indexes Δn (Δn = n_TE − n_TM) for TE and TM polarizations.     

Multilayer Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3/Bi1.5Zn1.0Nb1.5O7 thin films for tunable microwave applications

Bi_1.5Zn_1.0Nb_1.5O₇/Ba_0.6Sr_0.4TiO₃/Bi_1.5Zn_1.0Nb_1.5O₇ tunable multilayer thin film has been fabricated by pulsed laser ablation and characterized. Phase composition and microstructure of multilayer films were characterized by X-ray diffraction, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The film has very smooth surface with RMS roughness of 1.5-2 nm and grain size of 100-150 nm. Total film thickness has been measure to be 375 nm. The BZN thin films at 300 K, on Pt(1 1 1)/SiO₂/Si substrate showed zero-field dielectric constant of 105 and dielectric loss tangent of 0.002 at frequency of 0.1 MHz. Thin films annealed at 700 °C shows the dielectric tunability of 18% with biasing field 500 kV/cm at 0.1 MHz. The multilayer thin film shows nonferroelectric behavior at room temperature. The good physical and electrical properties of multilayer thin films make them promising candidate for tunable microwave device applications.     

Influence of Yb doping concentration on upconversion luminescence of Er in Lu2O3 phosphor

Cubic phase Lu₂O₃:Er³⁺/Yb³⁺ nanocrystal phosphors were prepared by sol–gel method. Fourier transform infrared (FT-IR) spectra were measured to evaluate the vibrational feature of the samples. Green and red radiations were observed upon 980 nm diode laser excitation. Laser power and Er³⁺ or Yb³⁺ doping concentration dependence of upconversion luminescence were studied to understand upconversion mechanisms. Excited state absorption, cross relaxation and energy transfer processes are the possible mechanisms for the visible emissions.     

Competition between green and infrared emission in Er:YLiF4 upconversion lasers

The competition between two laser transitions in Er:YLiF₄ (⁴S_3/2 → ⁴I_15/2 at 551 nm and ⁴S_3/2 → ⁴I_13/2 at 850 nm) is studied using a model based on rate equations. The laser emission is pumped by upconversion at 795 nm; for comparison, we also discuss upconversion pumping by another mechanism, at 970 nm. The conditions that favor laser emission in various regimes on these two transitions are found.     

Vanadium-Al2O3 nanostructured thin films prepared by pulsed laser deposition: Optical switching

The formation and optical response of VO_x nanoparticles embedded in amorphous aluminium oxide (Al₂O₃) thin films by pulsed laser deposition is studied. The thin films have been grown by alternate laser ablation of V and Al₂O₃ targets, which has resulted in a multilayer structure with embedded nanoparticles. The V content has been varied by changing the number of pulses on the V target. It is found that VO_x nanoparticles with dimensions around 5 nm have been formed. The structural analysis shows that the vanadium nanoparticles are oxidized, although probably there is not a unique oxide phase for each sample. The films show a different optical response depending on their vanadium content. Optical switching as a function of temperature has been observed for the two films with the highest vanadium content, at transition temperatures of about −20 °C and 315 °C thus suggesting the presence of nanoparticles with compositions V₄O₇ and V₂O₅, respectively.     

Infrared-to-visible upconversion emission of Er3+/Yb3+-codoped SrMoO4 phosphors as wide-range temperature sensor

Er³⁺/Yb³⁺-codoped SrMoO₄ phosphors were prepared by a high-temperature solid-state reaction method. At room temperature, all the as-prepared samples exhibited strong upconversion properties and the emission intensity increased dramatically with the increase of Yb³⁺ ion concentration, reaching its maximum value when the concentration was 5 mol%. The dependence of emission intensity on the pump power suggested that the upconversion emission was a two-photon process. Furthermore, the optical temperature sensing properties based on green upconversion emissions of the SrMoO₄:0.01Er³⁺/0.05Yb³⁺ phosphor were studied. It is found that the SrMoO₄:0.01Er³⁺/0.05Yb³⁺ phosphor can be operated over a very wide temperature range of 93–773 K with a maximum sensitivity of ∼0.0128 K⁻¹, indicating that low- and high-temperature thermometry can be simultaneously realized in this phosphor.     

Preparation and characterization of upconversion luminescent LaF3:Yb,Er/LaF3 core/shell nanocrystals

LaF₃:Yb³⁺,Er³⁺/LaF₃ core/shell nanocrystals were successfully synthesized using solvothermal method. The crystal structure, morphology and photoluminescence properties of as-prepared nanocrystals were investigated in detail. XRD patterns show that the obtained LaF₃:Yb³⁺,Er³⁺ core and LaF₃:Yb³⁺,Er³⁺/LaF₃ core/shell nanocrystals exhibit hexagonal structure. The average particle size is about 9.3 nm and 11.4 nm for core and core/shell nanocrystals, respectively. Compared with LaF₃:Yb³⁺,Er³⁺ nanocrystals, both the upconversion emission intensity and the lifetime increase in LaF₃:Yb³⁺,Er³⁺/LaF₃ core/shell nanocrystals. The enhancement can be attributed to the LaF₃ shell which can eliminate the nonradiative centers on the surface of LaF₃:Yb³⁺,Er³⁺ nanocrystals.     

Thickness effect in Pb(Zr0.2Ti0.8)O3 ferroelectric thin films grown by pulsed laser deposition

Epitaxial Pb(Zr_,Ti)O₃ (PZT) thin films with thicknesses in the range of 50-200 nm and with 0.2 Zr/(Zr + Ti) ratio, were grown by pulsed laser deposition (PLD).The substrates used for PLD deposition are single crystalline 0.5% Nb-doped (1 0 0) SrTiO₃ (STON). SrRuO₃ (SRO) thin films were deposited as bottom and top electrodes in order to have minimum structural misfit, to insure on one side high quality growth, and on the other side to minimize the influence of the extended structural defects. Structural and electrical characterization was performed. The epitaxial PZT films are c-axis oriented and have an average roughness of 0.4 nm. The ferroelectric behavior was proved in all investigated films by the presence of the hysteresis loops and by the butterfly shape of the capacitance-voltage (C-V) characteristics. The ferroelectricity was present even in the samples with relative high leakage currents, down to a thickness of 50 nm. These results are essential when small thickness is needed for miniaturization of ferroelectric devices using PZT.     

Facile synthesis of well-dispersed SrF2:Yb/Er upconversion nanocrystals in oleate complex systems

Well oil-dispersible SrF₂:Yb³⁺/Er³⁺ upconversion (UC) nanocrystals (NCs) were easily synthesized in the water-ethanol-oleic acid-sodium oleate complex systems. The as-prepared NCs all show size-uniformity, and their sizes, morphologies can be controlled by varying the solvent and reaction time, and rectangular SrF₂:Yb³⁺/Er³⁺ nanosheets with the sizes of 5-25 nm can be obtained. The possible mechanism on the nucleation and growth of nanocrystals occurred at the oleic acid/sodium oleate interface was also discussed. The size and morphology dependent UC luminescence behaviors have been observed in SrF₂:Yb³⁺/Er³⁺ NCs, and their UC luminescence transitions were proposed. The as-prepared UC nanocrystals are expected to fulfill the demand for biological applications.     

Lead-free ferroelectric BaTiO3 doped-(Na0.5Bi0.5)TiO3 thin films processed by pulsed laser deposition technique

The difficulties in synthesizing phase pure BaTiO₃ doped-(Na_0.5Bi_0.5)TiO₃ are known. In this work, we reporting the optimized pulsed laser deposition (PLD) conditions for obtaining pure phase 0.92(Na_0.5Bi_0.5)TiO₃-0.08BaTiO₃, (BNT-BT_0.08), thin films. Dielectric, ferroelectric and piezoelectric properties of BNT-BT_0.08, thin films deposited by PLD on Pt/TiO₂/SiO₂/Si substrates are investigated in this paper. Perovskite structure of BNT-BT_0.08 thin films with random orientation of nanocrystallites has been obtained by deposition at 600 °C. The relative dielectric constant and loss tangent at 100 kHz, of BNT-BT_0.08 thin film with 530 nm thickness, were 820 and 0.13, respectively. Ferroelectric hysteresis measurements indicated a remnant polarization value of 22 μC/cm² and a coercive field of 120 kV/cm. The piezoresponse force microscopy (PFM) data showed that most of the grains seem to be constituted of single ferroelectric domain. The as-deposited BNT-BT_0.08 thin film is ferroelectric at the nanoscale level and piezoelectric.     

Effect of oxygen pressure on structure and properties of Bi1.5Zn1.0Nb1.5O7 pyrochlore thin films prepared by pulsed laser deposition

The Bi₂O₃-ZnO-Nb₂O₅ (BZN) cubic pyrochlore thin films were prepared on Pt/TiO₂/SiO₂/Si(1 0 0) substrates by using pulsed laser deposition process. The oxygen pressure was varied in the range of 5-50 Pa to investigate its effect on the structure and dielectric properties of BZN thin films. It is found that oxygen pressure during deposition plays an important role on structure and other properties of BZN films. The BZN films deposited at temperature of 650 °C and at O₂ pressure of 5 Pa have an amorphous BZN and Nb₂O₅ phases but exhibits a cubic pyrochlore structure with a preferential (2 2 2) orientation when the oxygen pressure increases to 10 Pa. Dielectric constant and loss tangent of the films deposited at 10 Pa are 185 and 0.0008 at 10 kHz, respectively. The dielectric tunability is about 10% at a dc bias field of 0.9 MV/cm.     

Pulsed laser deposition and characterization of nitrogen-substituted SrTiO3 thin films

Nitrogen-substituted cubic perovskite-type SrTiO₃ thin films were deposited in a one-step process using pulsed reactive crossed beam laser ablation (PRCLA) and RF-plasma assisted pulsed laser deposition (RF-PLD). Both techniques yield preferentially oriented films on SrTiO₃(0 0 1), LaAlO₃(0 0 1) and MgO(0 0 1) substrates with the unit cell parameters within 0.390(5) < a < 0.394(9) nm. The nitrogen content is higher in films deposited by PRCLA (0.84-2.40 at.%) as compared to films deposited by RF-PLD with nitrogen plasma (0.10-0.66 at.%). PRCLA with an ammonia gas pulse leads to a higher nitrogen content compared to the films grown with a nitrogen gas pulse, while films deposited by RF-PLD with ammonia plasma reveal only minor nitrogen contents (<0.10 at.%). The amount of the incorporated nitrogen can be tuned by adjusting the deposition parameters. Films deposited by PRCLA have a lower roughness of 1-3 nm compared to 12-18 nm for the films grown by RF-PLD. PRCLA yields partially reduced films, which exhibit electronic conductivity, while films deposited by RF-PLD are insulating. There is also a pronounced influence of the substrate material on the resistivity of the films deposited by PRCLA: films grown on SrTiO₃ substrates exhibit a metallic-like behaviour, while the corresponding films grown on MgO and LaAlO₃ substrates reveal a metal-to-semiconductor/insulator transition. Nitrogen incorporation into the SrTiO₃ films results in an increased optical absorption at 370-500 nm which is associated with N(2p) localized states with the energy about 0.7 eV higher than the valence band energy in strontium titanate. The optical band gap energies in the studied N-substituted SrTiO₃ films are 3.35-3.40 eV.     

Pulsed laser deposition of Bi2Te3 thermoelectric films

Bi₂Te₃ is one of the most used materials for thermoelectric applications at ambient temperature. An improvement of thermoelectric performances through a suitable modification of electron and phonon transport mechanisms is predicted for low dimensional or nanostructured systems, but this requires a control of the material structure down to the nanoscale. We show that pulsed laser deposition provides control on film composition, phase and structure, necessary for a comprehension of the relationship between structure and thermoelectric properties. We have explored the role of deposition temperature, background inert gas type and pressure, laser fluence and target-to-substrate distance and we found the experimental condition ranges to obtain crystalline films containing the Bi₂Te₃ phase only, by comparing energy dispersive X-ray spectroscopy, Raman spectroscopy and X-ray diffraction analysis. Variations of substrate temperature and deposition gas pressure prove to be crucial also for the control of film morphology and crystallinity. Substrate type has no influence on film stoichiometry and crystallinity, but highly oriented growth can be achieved on mica due to van der Waals epitaxy.     

Morphology-dependent upconversion luminescence of ZnO:Er nanocrystals

Morphology impact on the upconverted luminescence of ZnO:Er³⁺ nanocrystals was studied with controllable morphology of nanorod, prickly sphere-like, column-like, branch rod, prism-like, and grain-like, prepared via the cetyltrimethylammonium bromide (CTAB)-assisted hydrothermal process. The upconversion emission of Er³⁺ with 980 nm excitation demonstrated morphology sensitivity which was related with the local environments of Er³⁺ ions in ZnO and doping efficiency. Under ultraviolet (UV) direct excitation, where exciton and defect emissions of ZnO appeared, morphology sensitivity was discussed in terms of surface-to-volume ratios.     

Structural and optical properties of pulsed laser deposited SrBi2Nb2O9 thin films

SrBi₂Nb₂O₉ (SBN) thin films were prepared on fused quartz substrates at room temperature by pulsed laser deposition. The influence of deposition parameters such as target-to-substrate distance, oxygen pressure and annealing temperature on film crystallization behavior was investigated by X-ray diffraction. Results indicated that the films grown at the optimum processing conditions have polycrystalline structure with a single layered perovskite phase. The optical transmittance of the films prepared at various oxygen pressures was measured in the wavelength range 200–900 nm using UV–vis spectrophotometer. The results showed that there is a red shift in the optical absorption edge with a rise in the oxygen pressure. Refractive index as a function of wavelength and optical band gap of the films were determined from the optical transmittance spectra. The results indicated that the refractive index increases with increasing oxygen pressure at the same incident light wavelength, while the band gap reduces from 4.13 to 3.88 eV. It may be attributed to an increase in packing density and grain size, and decrease in oxygen defects.     

Structural and optical properties of ZnO thin films deposited on quartz glass by pulsed laser deposition

ZnO thin films with typical c-axis (0 0 2) orientation were successfully deposited on quartz glass substrates by pulse laser ablation of Zn target in oxygen atmosphere at a relatively low temperature range of 100-250 °C. The structural and optical properties of the films were studied. In photoluminescence (PL) spectra at room temperature, single ultraviolet emission (without deep-level emission) was obtained from ZnO film deposited at the temperature of 200 °C. This was attributed to its low intrinsic defects.     

La0.67Ba0.33MnO3薄膜的激光辐照效应研究

利用脉冲激光沉积技术在LaAlO₃（00l）单晶衬底上制备了La_067Ba_033MnO₃薄膜,研究了CO₂激光辐照对La_067Ba_033MnO₃薄膜的微结构和磁电性能的影响.结果表明,经激光辐照后,La_067Ba_033MnO₃薄膜的结晶性增强,薄膜应变减小;薄膜表面形貌由“岛状”结构变为“平原"结构,且粗糙度大大降低;同时,薄膜的饱和磁化强度、铁磁居里温度、金属—绝缘态转变温度和磁电阻增大,而矫顽场和电阻率减小.根据对传统退火效应的分析和理论计算,认为激光辐照导致的表面微结构的变化以及薄膜的氧含量和均匀性的提高对La_067Ba_033MnO₃薄膜的磁电性能的改善与优化密切相关. 关键词： 庞磁电阻 激光辐照 脉冲激光溅射沉积     

Preparation and upconversion emission properties of TiO2 :Yb, Er inverse opals

Inverse opal photonic crystals of Y b³⁺, Er³⁺ co-doped TiO₂ (TiO₂:Yb, Er) were prepared by a self-assembly technique in combination with a sol-gel method. Upconversion (UC) luminescence properties of the inverse opals were investigated. The results show that photonic bandgap has significant influence on the upconversion emission of the TiO₂:Yb, Er inverse opal photonic crystals. Significant suppression of the upconversion emission was detected if the photonic bandgap overlapped with the Er³⁺ ions emission band.     

Crystallization and surface segregation in CuIn0.7Ga0.3Se2 thin films on Cu foils grown by pulsed laser deposition

This work reports unexpected crystallization and segregation behavior of CuIn_0.7Ga_0.3Se₂ (CIGS) thin films deposited on flexible Cu foils by pulsed laser deposition. A composite-type microstructure containing nanometer-scaled CIGS crystallites embedded in amorphous Cu-rich matrix is observed even at the high temperature of 500 °C. The findings are attributed to very fast condensation of the ablated species and random nucleation induced from the amorphous matrix. Cu-rich particulates tend to precipitate on the film surface, and their average size, shape, number density and composition exhibit a strong dependence on the substrate temperature up to 500 °C. The similar crystallization properties of the films on Cu foils and glass substrates are noticeable to the use of Cu foils for flexible solar cells.