Top-emitting organic light-emitting device with weak viewing angle-dependence

In this study, a top-emitting organic light-emitting device (TEOLED) with high efficiency and near angle-independence was fabricated on silicon substrate. The blue-shift of the resonant wavelength (RW) with increasing view angles was nearly negligible. The theoretical simulation was described by a model based on the Fabry-Perot microcavity structure. The maximum current efficiency of the fabricated device is 11.5 cd/A at 12 V.     

Flexible white top-emitting organic light-emitting diode with a MoO_x roughness improvement layer

In this paper, an MoOx film is deposited on a polyethylene terephthalate （PET） substrate as a buffer layer to improve the surface roughness of the flexible PET substrate. With an optimized MoOx thickness of 100 nm, the surface roughness of the PET substrate can be reduced to a very small value of 0.273 nm （much less than 0.585 nm of the pure PET）. Flexible white top-emitting organic light-emitting diodes （TEOLEDs） with red and blue dual phosphorescent emitting layers are constructed based on a low-reflectivity Sm/Ag semi-transparent cathode. The flexible white emission exhibits the best luminance and current injection characteristics with the 100-nm-thick MoOx buffer layer and this result indicates that a smooth substrate is beneficial to the enhancement of device electrical and electroluminescence performances. However, the white TEOLED with a 50-nm-thick MoOx buffer layer exhibits a maximum current efficiency of 4.64 cd/A and a power efficiency of 1.9 lm/W, slightly higher than those with a 100-nm MoOx buffer layer, which is mainly due to an obvious intensity enhancement but limited current increases in 50-nm MoOx-based white TEOLED. The change amplitudes of the Commission International de l’Eclairage （CIE） chromaticity coordinates are less than （0.016, 0.005） for all devices in a wide luminance range over 100 cd/m2, indicating an excellent color stability in our white flexible TEOLEDs. Additionally, the flexible white TEOLED with an MoOx buffer layer shows excellent flexibility to withstand more than 500 bending times under a curvature radius of approximately 9 mm. Research demonstrates that it is mainly attributed to the high surface energy of the MoOx buffer layer, which is conducible to the improvement of the surface adhesion to the PET substrate and the Ag anode.     

非周期微纳结构增强有机发光二极管光耦合输出的研究进展

有机发光二极管（OLED）具有功耗低、重量轻、色域宽、响应时间快及对比度高等优点,在全彩平板显示和固态照明等领域均显现出巨大的应用潜力,受到人们的广泛关注.然而,较低的光输出效率使得器件的外量子效率远低于内量子效率,这严重制约了OLED器件的发展和应用.因此如何提高OLED器件的光耦合输出效率已成为备受关注的研究课题.本文主要介绍了采用非周期微纳结构提高OLED器件光耦合输出效率的最新研究进展,对随机微纳透镜结构、光散射介质层、聚合物多孔散射薄膜、随机凹凸波纹结构及随机褶皱结构等多种对器件亮度分布和光谱稳定性无明显影响的光耦合输出技术进行了总结和讨论.最后,对提高OLED器件光耦合输出研究做了总结和展望.     

有机发光二极管光取出技术研究进展

有机发光二极管(OLED)在通信、信息、显示和照明等领域均显现出巨大的商业应用前景,十几年来一直是光电信息领域的研究热点之一.但是,OLED的外量子效率远低于内量子效率,极大程度地制约了其发展和应用.本文主要介绍了多种有效提高器件效率的光取出技术,对微透镜、光子晶体结构、纳米图案和纳米多孔膜以及微腔技术等多种OLED修饰方法进行了回顾和讨论.在此基础上,对一些光取出技术的研究做了展望.     

聚合物发光二极管面光源的光热特性

运用传输矩阵法及MATLAB软件模拟计算了以MEH-PPV为发光材料的PLED面光源出光率,分析了发光层、PEDOT层、ITO层对器件出光率的影响.模拟分析了玻璃表面半球形、圆台形、圆锥形3种微形貌对器件出光率的影响.仿真结果表明,玻璃表面为圆锥形微散射层对提高器件出光率最有利,且出光均匀性最好.最后分析了PLED面光...     

利用氧等离子体处理阳极银实现高效率顶发射有机电致发光

主要报道在器件结构为玻璃衬底/Ag(阳极)/NPB(空穴传输层)/Alq3(电子传输及发光层)/Sm(半透明阴极)/Alq3的顶发射有机电致发光器件中,利用氧等离子体对阳极银的表面进行处理来降低阳极和空穴传输层(Ag/NPB)界面处的空穴注入势垒,提高顶发射有机电致发光器件的性能。主要研究了氧等离子体处理时间对阳极银和顶发射有机电致发光器件光电特性的影响。紫外光电子能谱表明,氧等离子体处理能有效降低Ag/NPB界面处的空穴注入势垒。通过优化处理时间获得最佳器件性能,优化后的器件最大效率可达6.14cd/A。     

可弯曲式有机电玫发光器件的出光率

基于几何光学模型及其原理,推导出在不同弯曲情况下可弯曲式有机电致发光器件的出光率表达式,分析了器件出光率受基板曲率、厚度及有机层折射率的影响,并与平整有机电致发光器件的出光情况作了比较.结果表明:当器件向外弯曲时,出光率随着基板曲率与基板厚度的增大而增大,随着有机层折射率的增大而减小;当器件向内弯曲时,出光率随着基板曲率与基板厚度的增大而减小,随着有机层折射率的增大而减小.对于平整器件,其出光率随有机层折射率的增大而减小.     

Efficient top-emitting white organic light emitting device with an extremely stable chromaticity and viewing-angle

In this paper,we report on the fabrication of a top-emitting electrophosphorescent p-i-n white organic lightemitting diode on the basis of a low-reflectivity Sm/Ag semi-transparent cathode together with a thickness-optimized ZnS out-coupling layer.With a 24-nm out-coupling layer,the reflectivity of the cathode is reduced to 8% at 492 nm and the mean reflectivity is 24% in the visible area.By introducing an efficient electron blocking layer tris(1phenylpyrazolato,N,C2 ’)iridium(III)(Ir(ppz) 3) to confine the exciton recombination area,the current efficiency and the colour stability of the device are effectively improved.A white emission with the Ir(ppz) 3 layer exhibits a maximum current efficiency of 9.8 cd/A at 8 V,and the Commission Internationale de L’Eclairage(CIE) chromaticity coordinates are almost constant during a large voltage change of 6 V-11 V.There is almost no viewing angular dependence in the spectrum when the viewing angle is no more than 45,with a CIE x,y coordinate variation of only(±0.0025,±0.0008).Even at a large viewing angle(75),the CIE x,y coordinate change is as small as(±0.0087,±0.0013).     

超低效率滚降顶发射白光有机电致发光器件

利用Ag/tris-（8-hydroxyquinoline） aluminum（Alq₃）/Ag/Alq₃/Ag这一金属/有机半导体多层结构作为阳极,实现了超低效率滚降的顶发射白光器件。在该器件中,我们在蓝光和橙光发光单元之间引入一个薄的4,4′-bis（9-carbazolyl）-2,2′-biphenyl（CBP）层,从而减少橙光发光层与蓝光发光层的Dexter能量传递,用以改善白光器件发光光谱及效率。通过优化微腔设计,实现了对橙光磷光材料发射的调控。最终,我们获得了在60 000 cd/m²亮度下效率滚降仅为17%的顶发射白光器件。在效率方面,虽然顶发射白光器件与底发射白光器件不相上下,但由于微腔效应的存在,顶发射白光器件的效率滚降却远低于底发射白光器件的效率滚降。     

Angle-stable top-emitting white organic light-emitting devices employing a down-conversion layer

Angle-stable white top-emitting organic light-emitting devices (WTEOLEDs) by the combination of a blue TEOLED with a down-conversion (DC) layer are demonstrated. The DC layer is composed of red fluorescent dye doped in a host of tris (8-hydroxy-quinolinato) aluminum. The TEWOLED shows a CIE coordinates of (0.240, 0.332) and a maximum current efficiency of 3.95 cd/A. Furthermore, the WTEOLED shows excellently angle-stable characteristic, the CIE coordinates at 20 mA/cm² only shift by (0.023, −0.007) from 0° to 60°. It can be attributed to the angle-stable blue TEOLED based on the Ag/Ge/Ag transparent cathode.     

High-contrast top-emitting organic light-emitting devices

In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer.The contrast-enhancement stack consists of a thin metal anode layer,a dielectric bilayer,and a thick metal underlayer.The resulting device,with the optimized contrast-enhancement stack thicknesses of Ni(30 nm)/MgF 2(62 nm)/ZnS(16 nm)/Ni(20 nm) and the 25-nm-thick ZnS anti-reflection layer,achieves a luminous reflectance of 4.01% in the visible region and a maximum current efficiency of 0.99 cd/A(at 62.3 mA/cm 2) together with a very stable chromaticity.The contrast ratio reaches 561:1 at an on-state brightness of 1000 cd/m 2 under an ambient illumination of 140 lx.In addition,the anti-reflection layer can also enhance the transmissivity of the cathode and improve light out-coupling by the effective restraint of microcavity effects.     

Analytical treatment of light extraction from textured surfaces using classical ray optics

Regular periodic textures e.g., microlens arrays, micro-pyramids, and cones on substrate surface have been used to enhance light out-coupling in light emitting devices. Photon randomization, often associated with surface roughening, has been suggested as the mechanism for out-coupling enhancement. This article analytically investigates the ray dynamics in a light emitting device when periodic texture is used as an external out-coupler. An attempt has been made to understand the relationship between enhancement in out-coupling and the surface inclination of these structures using classical ray optics.     

GaN基蓝光LED中光子晶体对提取效率及发光偏振态的影响

为了提高氮化镓基蓝光发光二极管的发光提取效率,在其电流扩展层上生长光子晶体.讨论了光子晶体结构周期、刻蚀深度和占空比参数与提取效率的关系,并采用时域有限差分法进行模拟计算.结果表明在晶格周期为300nm、占空比为60%和刻蚀深度为200nm的条件下,生长光子晶体结构后,氮化镓基蓝光发光二极管的提取效率提升了27.93%.研究了激励源在光子晶体晶格周期内位置变化对提取效率的影响,拟合得到更符合实际物理意义的氮化镓基蓝光发光二极管发光提取效率函数.利用等效折射率理论和法布里-珀罗薄膜干涉模型解释了氮化镓基蓝光发光二极管中TE模和TM模偏振之间提取效率的差异,数值仿真得到最大差异值为1.442倍,从而获得高偏振对比度光源.用该结构参数制备的发光二极管器件应用于液晶显示背光源,可提高液晶显示的能耗效率.     

具有穿插界面结构的高效绿光有机电致磷光器件

以传统有机电致磷光器件ITO/NPB/CBP∶Ir(ppy)₃/BAlq/Alq₃/LiF/Al为研究对象,在NPB/CBP∶Ir(ppy)₃、CBP∶Ir(ppy)₃/BAlq及BAlq/Alq₃界面处构造交互穿插结构。器件的光电性能测试表明:交互穿插结构一方面能够降低电流密度,减少高电流密度下磷光猝灭中心的形成;另一方面能增加载流子复合界面面积,从而分散界面三线态激子,降低三线态-三线态激子的猝灭。此外,界面凸起的存在还有利于器件的光耦合输出。实验结果表明:当穿插厚度为10 nm,器件的最大电流效率达到34.0 cd/A,与传统器件的电流效率18.7 cd/A相比,提高了55%。     

Novel transparent Yb-based cathodes for top-emitting organic light emitting devices with high performance

We have studied three kinds of transparent low-work-function Yb-based cathodes for the top-emitting organic light emitting devices (TEOLEDs) with a structure of ITO/NPB/Alq₃/cathodes and compared them with each other. For the Yb/Au cathodes, a series of Yb layers with various thicknesses have been tested and it is found that the Yb layer with a thickness of 4 nm is the optimum one. The Yb:Au (19 nm) and Yb:Ag (19 nm) co-evaporation cathodes possess very high transmittance but relative poor electron injection; whilst the Yb (4 nm)/Au (15 nm) cathode possess a little lower transmittance but much improved electron injection and the TEOLED with this cathode has the highest power efficiency among the TEOLEDs with the three kinds of Yb-based cathodes mentioned above.     

多层结构的阴极修饰层对有机电致发光器件的性能改善

为提高有机电致发光器件（OLEDs）的阴极电子注入效率,我们设计了新型的阴极杂化修饰层,其结构为Bphen∶LiF/Al/MoO₃,将其应用到器件ITO/NPB/Alq₃/Al中,参考器件的电子注入层选用传统材料LiF。实验研究表明,与传统的阴极修饰层LiF相比,基于这种杂化结构的阴极修饰层非常有效。测试了器件的电致发光光谱（EL谱）,其峰值位于534 nm,发光来自于Alq₃,实验中我们可以观察到明亮的绿色发光。将其与传统参考器件的EL谱进行对比,在电流密度40 mA·cm-2下,两个器件的电致发光光谱是一致的。在0～100 mA·cm-2范围内,对器件的EL谱进行了测试。实验结果表明,随着电流密度的增加,器件的发光增强,但是EL谱的形状和谱峰的位置是固定不变的。与参考器件对比,基于杂化修饰层的器件的发光性能更好。研究表明,杂化修饰层的最佳参数为Bphen∶LiF(5 nm; 6%)/Al(1 nm)/MoO₃(5 nm),在测试范围内,器件的最大电流效率和最大功率效率分别为4.28 cd·A-1和2.19 lm·W-1,相比参考器件提高了25.5%和23.7%。器件的电流密度-电压特性曲线表明阴极杂化修饰层可以增强电子的注入,使器件中的载流子更加平衡,从而提高了器件的发光性能。从两个角度对器件效率的增强进行了理论方面的论证。一方面利用阴极杂化修饰层的作用机制来解释。在HML中,LiF能填充Bphen的电子陷阱,增强电流的注入,同时HML也能限制空穴的传输,减小空穴电流。另一方面从电荷平衡因子的角度,HML增强了电子的注入,使得器件的电荷平衡因子增大,空穴和电子的平衡性更好。实验研究表明,阴极杂化修饰层很好地增强了器件的效率。     

Investigation on the escaped and trapped emission in organic light-emitting devices

The escaped and trapped emission of small molecule based bottom emission organic light-emitting diodes was investigated by using an integrating sphere and a fiber spectrometer and a glass hemisphere. It was found that the maximum external coupling ratio r_ext, namely the ratio of escaped emission to the emission of escaped and trapped in the substrate, is 56%. We also extended the “half-space” dipole model by taking dipole radiation pattern into account, which agreed well with our experiments. Our experimental and theoretical results will benefit the optimization of device structures for the higher out-coupling efficiency.     

利用p型掺杂技术制备的高效有机电致发光器件

利用氧化钼(MoO_x)作为p型掺杂剂,以掺杂层4,4'-bis(carbazol-9-yl)biphenyl(CBP):MoO_x作为空穴注入层,制备了一种结构为ITO/MoO_x/CBP:MoO_x/CBP/CBP:tris(2-phenylpyridine)iridium(III)(Ir(ppy)₃)/4,7-diphenyl-1,10-phenanthroline(Bphen)/LiF/Al的有机电致发光器件.器件中CBP同时作为空穴注入层、空穴传输层以及发光层母体材料,这种结构具有结构简单同时能有效降低空穴注入势垒等优点.研究发现,随着空穴注入层厚度的增加,器件的电流密度增加,表明p型掺杂层的引入能够有效增强空穴的注入;通过优化器件空穴注入层与空穴传输层厚度,器件性能有所提高,最大电流效率为29.8 cd/A,可以认为合理的优化空穴注入层和空穴传输层的厚度,使载流子在发光层中的分布更加平衡是提高器件发光效率的主要原因.值得指出的是,从电流效率最大值到亮度为 20 000 cd/m²时,优化后器件的效率衰减仅为17.7%,而常规器件的效率衰减则为62.1%,优化后器件效率衰减现象得到了明显的改善.分析认为优化后的器件中未掺杂的CBP有助于展宽激子形成区宽度,进而减弱了三线态-三线态湮灭、三线态-极化子淬灭现象,激子形成区的展宽是改善效率衰减的主要原因.     

一种高电流密度下效率不降低的绿光有机电致发光器件

为了提高有机电致发光器件(OLED)在高电流密度下的发光效率, 在以C545T掺杂Alq₃为发光层的有机小分子绿光器件中的发光层与电子传输层之间插入超薄LiF绝缘层.结果表明, 器件的外量子效率随着电流密度的增加始终没有降低, 直至600 mA/cm²时达到最大值 4.79%, 是相同电流密度下的参考器件的外量子效率的7倍.     

背照射和正照射p-i-n结构GaN紫外探测器的i-GaN和p-GaN厚度设计

研究了i-GaN和p-GaN厚度对背照射和正照射p-i-n结构GaN紫外探测器响应光谱的影响。模拟计算发现:对于背照射结构, 适当地减小i-GaN厚度有利于提高探测器的响应, 降低i-GaN层的本底载流子浓度也有利于提高探测器的响应;p-GaN的欧姆接触特性好坏对探测器的响应影响不大, 适当地增加p-GaN厚度可以改善探测器性能。而正照射结构则不同, i-GaN厚度对探测器的响应度影响不大, 但欧姆接触特性差将严重降低探测器的响应, 适当地减小p-GaN厚度可以大幅度改善探测器的响应特性。能带结构和入射光吸收的差别导致了正照射和背照射探测器结构中i层和p层厚度的选择和设计不同。