Effect of oxygen content and charge on the structure,stability and optoelectronic properties of yttrium oxide clusters

The electronic and geometrical structures of neutral and charged YOn (n=2–12) clusters have been investigated using density functional theory (DFT) with generalized gradient approximation. The oxygen atom in YOn has been found to be in oxo, peroxo and in superoxo forms. The geometrical structures and topologies of small size anionic clusters resemble that of neutral clusters. Yttrium showed higher coordination number than scandium. Computed results reveal the existence of YO₁₀ cluster to have a penta-peroxo oxygen with a homoleptic Y(η² –O₂)₅ geometrical configuration. The HOMO–LUMO gaps decrease with increasing n due to the increase in 2p orbital population of oxygen atoms. It has been shown that in these clusters bonding are predominantly ionic in nature and anions are thermodynamically more stable, due to the charge delocalization between the metal atom and oxygen ligands. YO₁₀⁺ and YO₁₂⁺ were found to be highly exothermic to release one and two oxygen molecules, while YO₁₁⁺ dissociates though the ozonide dissociation channel. Computed absorption spectra of small clusters are mainly contributed by yttrium metal d and s valence orbitals. The absorbance spectra, shifts towards lower energy with cluster size increase, while charge has no substantial effect on the absorption spectrum.     

AlSb掺Mn、Fe的电子结构和光学性质

本文基于第一性原理平面波赝势(PWP)和广义梯度近似(GGA)方法,对闪锌矿型AlSb的超晶胞、掺入杂质Mn和Fe超晶胞进行结构优化处理。计算了三种体系下AlSb超晶胞的电子结构、Mullkien电荷数和光学性质,详细研究了其能带结构、电子态密度、电荷布局分布和光学性质。结果表明：在Mn,Fe掺杂AlSb体系中,由于空穴密度的增加,禁带宽度减小,材料表现出半金属行为,且在可见光区电子跃迁明显增强。     

DFT study on the electronic structure and chemical state of Americium in an (Am,U) mixed oxide

We investigated the electronic state of an (Am,U) mixed oxide with the fluorite structure using the all-electron full potential linear augmented plane wave method and compared it with those of Am₂O₃, AmO₂, UO₂, and La_0.5U_0.5O₂. The valence of Am in the mixed oxide was close to that of Am₂O₃ and the valence of U in the mixed oxide was pentavalent. The electronic structure of AmO₂ was different from that of Am₂O₃, particularly just above the Fermi level. In addition, the electronic states of Am and U in the mixed oxide were similar to those of trivalent Am and pentavalent U oxides. These electronic states reflected the high oxygen potential of AmO₂ and the heightened oxygen potential resulting from the addition of Am to UO₂ and also suggested the occurrence of charge transfer from Am to U in the solid solution process.     

Electronic structure and magnetic properties of YbCuAl

The electronic band structure of YbCuAl has been calculated using the self-consistent full potential nonorthogonal local orbital minimum basis scheme based on the density functional theory. We investigated the electronic structure with the spin–orbit interaction and on-site Coulomb potential for the Yb-derived 4f orbitals to obtain the correct ground state of YbCuAl. The exchange interaction between local f electrons and conduction electrons play an important role in the heavy fermion characters of them. The fully relativistic band structure scheme shows that spin–orbit coupling splits the 4f states into two manifolds, the 4f_7/2 and the 4f_5/2 multiplet.     

Effect of microwave irradiation on the electronic structure of ZnO

Modifying the electronic structure may allow a bulk material to efficiently absorb radiation as well as excite and emit atomic plasma. The interaction between microwaves and metal oxides is investigated by analyzing the electronic structure of ZnO with and without microwave (MW) irradiation using absorption, photoluminescence (PL), and PL excitation (PLE) spectroscopies and utilizing an ultraviolet synchrotron light source. MW irradiation lowers the energy of the absorption edge of ZnO producing defects. Additionally, MW irradiation causes a resonantly enhanced change in the intensity and peak shift of the PL band. These phenomena indicate that the defects generated by MW irradiation change the electronic structure of ZnO and the electron transition process.     

硼氮掺杂对立方PbTiO3电子结构和光学性质影响的第一性原理研究

钛酸铅(PTO)因具有优异的铁电、压电特性及光学性质而备受关注.但B、N掺杂对顺电相PTO电子结构和光学性质的影响还不明确,因此,利用第一性原理对立方PTO开展准确的性质预测尤为必要.本文采用广义梯度近似的PBE泛函(GGA-PBE)和杂化泛函(HSE06)研究了B、N替位掺杂(B_O、N_O)和O空位(V_O)对PTO的基态性质、电子结构和光学性质的影响.研究表明：贫氧态的PTO比富氧态更容易形成杂质缺陷,且N_O缺陷最难形成.当B_O、N_O缺陷存在时,PTO的价带顶和导带底向低能量方向移动,在两者之间出现杂质能级,使其导电性能提高且含B_O的PTO为间接带隙半导体,而含N_O的PTO为直接带隙半导体. N_O体系在波长大约为230 nm处有最大吸收峰,该峰主要源于O 2p和Ti 3d之间的电子跃迁,且N_O体系对可见光的吸收能力最强,有望提高PTO的光催化能力.     

二维InSe/SnSe2范德华异质结的电子结构和光学特性研究

本文构建了三种不同堆叠形式下的二维InSe/SnSe₂范德华异质结模型,利用基于密度泛函理论的第一性原理方法综合考察了二维InSe/SnSe₂三种不同堆叠情况下的几何构型及稳定性,在此基础上选取具有最稳定性能的构型.该异质结呈现出Ⅱ型能带对齐特征,带隙值为1.118 eV,可以实现电子-空穴的有效分离.另外,相比与单层二维InSe/SnSe₂范德华异质结的光吸收能力达到明显提升,在紫外光范围内吸收系数达到10~6 cm^-1.研究结果将为相关物理实验及机理研究提供理论基础,对二维InSe/SnSe₂范德华异质结在光电器件中的应用具有重要的物理意义.     

第一性原理对SinMg(n=1-12)团簇结构、稳定性与电子性质的研究

运用密度泛函理论(DFT)的杂化密度泛函B3LYP方法,在6-311G基组水平上对 团簇进行了构型优化、频率分析与电子性质计算.同时讨论了团簇的平均结合能、能级间隙、二阶能量差分、自然电子布居、极化率.研究结果表明： 团簇的基态绝大多数为立体结构. 时,体系的基态为自旋三重度, 时,则为单重态.镁原子的掺入使得主团簇的电子性质发生了明显的变化,掺杂使体系的平均结合能降低,能隙减小,化学硬度减小,电子亲和能增大.电子总是从 原子向 原子转移.团簇中原子之间的成键相互作用随n的增大 而增强,团簇的电子结构随n的增大而趋于紧凑.     

First-principles energy band calculation for undoped and S-doped TiO2 with anatase structure

The electronic structure of S-doped TiO₂ with an optimized anatase structure was calculated within the framework of the density functional theory (DFT). For the calculation we built four kinds of supercells; type-A and B supercells consist of 12 and 48 atoms and a centered Ti atom is substituted for an S atom, while type-C and D supercells consist of 12 and 48 atoms and a centered O atom is substituted for an S atom. The supercells (type-B and D) were employed to adjust the S-concentration in TiO₂ to an experimental value of a few %. The changes of the lattice parameters are not significant in the type-A and B supercells. The phase transition from the tetragonal to the orthorhombic occurs in the type-C and D supercells. In the small supercell (type-A), S-related states are located in the range of −1.6 to 0 eV, and the S-states are band-like. In contrast, in the large supercell (type-B), S-related states appeared at about 0.9 eV above the top of the valence band, and the S-states are atomic-like. The localization of the S-related states is remarkable in the type-B supercell. In the type-D supercell, the S-related states were merged with the top of the valence band, and as a result the band-gap energy is narrowed by 0.7 eV. Despite a low S-concentration (3%) in the type-D supercell, the S-related states are somewhat band-like.     

First-principles energy band calculation for undoped and N-doped InTaO4 with layered wolframite-type structure

The electronic structures of undoped and N-doped InTaO₄ with optimized structures are calculated within the framework of the density functional theory. Calculated lattice constants are in excellent agreement with experimental values, within a difference of 2%. The valence band maximum (VBM) is located near the middle point on the ZD line and the conduction band minimum (CBM) near the middle point on the DX line. This means that InTaO₄ is an indirect-gap material and a minimum theoretical gap between VBM and CBM is ca. 3.7 eV. The valence band in the range from −6.0 to 0 eV mainly consists of O 2p orbitals, where In 4d5s5p and Ta 5d orbitals are slightly hybridized with O 2p orbitals. On the other hand, the conduction band below 5.5 eV is mainly composed of the Ta 5d orbitals and the contributions of In and O orbitals are small. The band gap of N-doped InTaO₄ decreases by 0.3 eV than that of undoped InTaO₄, because new gap states originating from N 2p orbitals appear near the top of the valence band. This result indicates that doping of N atoms into metal oxides is a useful method to develop photocatalysts sensitive to visible light.     

Atomic structure and collision dynamics with highly charged ions

The research progresses on the investigations of atomic structure and collision dynamics with highly charged ions based on the heavy ion storage rings and electron ion beam traps in recent 20 years are reviewed. The structure part covers test of quantum electrodynamics and electron correlation in strong Coulomb field studied through dielectronic recombination spectroscopy and VUV/x-ray spectroscopy. The collision dynamics part includes charge exchange dynamics in ion-atom collisions mainly in Bohr velocity region, ion-induced fragmentation mechanisms of molecules, hydrogen-bound and van de Waals bound clusters, interference, and phase information observed in ion-atom/molecule collisions. With this achievements, two aspects of theoretical studies related to low energy and relativistic energy collisions are presented. The applications of data relevant to key atomic processes like dielectronic recombination and charge exchanges involving highly charged ions are discussed. At the end of this review, some future prospects of research related to highly charged ions are proposed.     

Ti和Al共掺杂ZnS的电子结构和光学性质

基于密度泛函理论的第一性原理研究Ti和Al单掺杂和(Ti,Al)共掺杂ZnS的能带结构、电子态密度分布、介电函数、光学吸收系数,分析了掺杂后电子结构与光学性质的变化.计算结果表明:掺杂后禁带中引入了新的杂质能级,费米能级进入导带.掺杂改变了ZnS晶体的导电特性,使它表现出金属特性,导电性能增强;与纯净ZnS相比,Ti单掺杂和(Ti,Al)共掺杂ZnS的吸收边均出现明显的红移,且在1.79eV左右出现了一个新峰;而Al单掺杂ZnS的吸收边则发生明显的蓝移,且不产生新的吸收峰.     

Electronic structure and magnetic properties of BaTi1-xMnxO3

The electronic structure and magnetic properties of polycrystalline BaTi_1-xMn_xO₃ (x = 0–0.1) compounds prepared by solid-state reactions were studied. The results revealed that the increase in Mn content (x) did not change the oxidation numbers of Ba (+2) and Ti (+4) in BaTi_1-xMn_xO₃. However, there is the change in Mn valence that Mn^3+,4+ ions coexist in the samples with x = 0.01–0.04 while Mn⁴⁺ ions are almost dominant in the samples with x = 0.06–0.1. We also point out that Mn³⁺ and Mn⁴⁺ ions substitute for Ti⁴⁺ and prefer locating in the tetragonal and hexagonal BaTiO₃ structures, respectively, in which the hexagonal phase constitutes soon as x = 0.01. Particularly, all the samples exhibit room-temperature ferromagnetism. Ferromagnetic order increases with increasing x from 0 to 0.02, but decreases as x ≥ 0.04. We think that ferromagnetism in BaTi_1-xMn_xO₃ is related to lattice defects and/or exchange interactions between Mn³⁺ and Mn⁴⁺ ions.     

ZnSe小团簇结构稳定性和电子性质研究

文章研究了小尺寸的(ZnSe)n团簇(n=2-16)的结构和电子性质.通过手工搭建得到团簇结构,用DMol软件包进行结构优化和能量计算,最后分析计算结果 .研究结果表明,对于n=2-4,平面环状结构的能量最低;对于n=5,非平面环状结构的能量最低;对于n=6-12,空心笼状结构的能量最低;对于n=13,核-壳笼状结构的能量最低;对于n=14-16,依旧是空心笼状结构的能量最低.通过分析(ZnSe)_n团簇(n=2-16)的电子性质,我们可以得到,(ZnSe)_9团簇、(ZnSe)_(12)团簇具有很好的稳定性.     

Electronic properties and STM images of vacancy clusters and chains in functionalized silicene and germanene

Electronic properties and STM topographical images of X (=F, H, O) functionalized silicene and germanene have been investigated by introducing various kind of vacancy clusters and chain patterns in monolayers within density functional theory (DFT) framework. The relative ease of formation of vacancy clusters and chain patterns is found to be energetically most favorable in hydrogenated silicene and germanene. F- and H-functionalized silicene and germanene are direct bandgap semiconducting with bandgap ranging between 0.1–1.9 eV, while O-functionalized monolayers are metallic in nature. By introducing various vacancy clusters and chain patterns in both silicene and germanene, the electronic and magnetic properties get modified in significant manner e.g. F- and H-functionalized silicene and germanene with hexagonal and rectangle vacancy clusters are non-magnetic semiconductors with modified bandgap values while pentagonal and triangle vacancy clusters induce metallicity and magnetic character in monolayers; hexagonal vacancy chain patterns induce direct-to-indirect gap transition while zigzag vacancy chain patterns retain direct bandgap nature of monolayers. Calculated STM topographical images show distinctly different characteristics for various type of vacancy clusters and chain patterns which may be used as electronic fingerprints to identify various vacancy patterns in silicene and germanene created during the process of functionalization.     

Electronic and geometric structure of doped rare-gas clusters: surface, site and size effects studied with luminescence spectroscopy

The electronic and geometric structure of rare gas clusters doped with rare-gas atoms Rg = Xe, Kr or Ar is investigated with fluorescence excitation spectroscopy in the VUV spectral range. Several absorption bands are observed in the region of the first electronic excitations of the impurity atoms, which are related to the lowest spin-orbit split atomic ³P₁ and ¹P₁ states. Due to influence of surrounding atoms of the cluster, the atomic lines are shifted to the blue and broadened (“electronical cage effect”). From the known interaction potentials and the measured spectral shifts the coordination of the impurity atom in Ar_N, Kr_N, Ne_N and He_N could be studied in great detail. In the interior of Kr_N and Ar_N the Xe atoms are located in substitutional sites with 12 nearest neighbours and internuclear distances comparable to that of the host matrix. In Ne_N and He_N the cluster atoms (18 and 22, respectively) arrange themselves around the Xe impurity with a bondlength comparable to that of the heteronuclear dimer. The results confirm that He clusters are liquid while Ne clusters are solid for N≥ 300. Smaller Ne clusters exhibit a liquid like behaviour. When doping is strong, small Rg_m-clusters (Rg = Xe, Kr, Ar, m≤10 ²) are formed in the interior sites of the host cluster made of Ne or He. Specific electronically excited states, assigned to interface excitons are observed. Their absorption bands appear and shift towards lower energy when the cluster size m increases, according to the Frenkel exciton model. The characteristic bulk excitons appear in the spectra, only when the cluster radius exceeds the penetration depth of the interface exciton, which can be considerably larger than that in free Rg_m clusters. This effect is sensitive to electron affinities of the guest and the host cluster.     

Electronic and magnetic properties of beryllium oxide with 3d impurities from first-principles calculations

The ab initio VASP–PAW method with the generalized gradient approximation (GGA) has been applied to predict the electronic and magnetic properties of wurtzite-like beryllium oxide (BeO) doped with all 3d metals. Adding of 3d metal ions into BeO transforms the initial non-magnetic insulator BeO into series of magnetic and non-magnetic materials with various functional properties.     

Electronic structure and electric-field-gradients distribution in Y3Al5O12: An ab initio study

The periodic Hartree-Fock method has been applied to calculate the electronic structure of the yttrium aluminium garnet. We report on the results of the density of state calculations, the population analysis, as well as the electric-field-gradient distribution. A comparative analysis with the related structure α-Al₂O₃ was done. The calculations show that the Y₃Al₅O₁₂ crystal is more ionic than α-Al₂O₃.     

Benzene and NO on a Ru(0 0 1) surface: Electronic structure and bonding

We have theoretically studied the co-adsorption of benzene and NO on a Ru surface. The calculations were performed using the atom superposition and electron delocalisation-tight-binding (ASED-TB) method. We have modelled the Ru(0 0 1)-p(3 × 3)-4C₆D₆ + 2NO co-adsorbed layer from experimental data.We have confirmed that the more stable sites are hcp on the Ru for both benzene and NO co-adsorbates.The NO states are more stabilized in the co-adsorbed system. There is more bonding between RuN than RuC. We have described an important interaction of on H (from benzene) and the O (from a close NO). That results explain previous experimental reports and confirm suggested direct interaction.