Enhanced luminance of MEH-PPV based PLEDs using single walled carbon nanotube composite as an electron transporting layer

An efficient electron transporting layer (ETL) based on single walled carbon nanotube (SWCNT) composites has been developed for poly [2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) based orange polymer light emitting diodes (PLEDs) and its effect on the performance of PLEDs has been examined. It is observed that with increase in SWCNT concentration, in ETL, the luminance and luminous efficiency of the PLEDs increase (about 5 times increase in luminance is observed at 5% w/w SWCNT concentration). The SWCNTs present in the MEH-PPV ETL boost the mobility of electrons injected from the cathode towards the emissive layer by establishing highly conducting percolation paths. This balances the concentration of holes and electrons in the emissive layer, which leads to enhanced emission from the PLEDs.     

Enhanced quantum efficiency in polymer electroluminescence devices by inserting an ultrathin PMMA layer

We report an increase of electroluminescence (EL) efficiency by about two times for poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV) based polymer light-emitting diodes (PLED) while employing an ultrathin layer of poly(methyl methacrylate) (PMMA) between a hole injection layer, polyethylenedioxythiophenne:polystyrenesulfonate (PEDOT:PSS) and an emitting layer, MEH-PPV. The peak power efficiency of the control device (ITO/MEH-PPV/LiF/Al) was 0.42 lm/W with a current efficiency of 0.66 cd/A. The device with the optimized thickness of PMMA interface layer shows the highest power efficiency of 1.15 lm/W at a current efficiency exceeding 1.83 cd/A. The significant improvement in the device performance is attributed to the decrease of holes injection and the promotion of electrons injection, which cause the balance of the carriers within the emitting layer.     

Enhancement of efficiency of multilayer polymer light-emitting diodes by inserting blocking layers

In this study, the electroluminescence efficiency of the blue-green polymer light-emitting diodes (PLEDs) is enhanced by the insertion of blocking layers. PLEDs are multilayered structures prepared with spin-coating and thermal evaporation. Blue host is doped with green guest to form a single emission layer. Poly(9-vinylcarbazole) (PVK) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) are used as materials for the blocking layers. The optimal thicknesses of the PVK and BCP layers are 10 and 0.2 nm, respectively. PVK plays an important role of blocking holes and electrons, and BCP not only confines holes in the emission layer but also enhances the injection of electrons from Alq₃ to the emission layer. The efficiency of a PLED with a dual-blocking layer is 2.37 times higher than that of a PLED without a blocking layer prepared because of the improved carrier balance and the enhanced carrier recombination.     

聚合物发光二极管面光源的光热特性

运用传输矩阵法及MATLAB软件模拟计算了以MEH-PPV为发光材料的PLED面光源出光率,分析了发光层、PEDOT层、ITO层对器件出光率的影响.模拟分析了玻璃表面半球形、圆台形、圆锥形3种微形貌对器件出光率的影响.仿真结果表明,玻璃表面为圆锥形微散射层对提高器件出光率最有利,且出光均匀性最好.最后分析了PLED面光...     

Performance improvement of MEH-PPV:PCBM solar cells using bathocuproine and bathophenanthroline as the buffer layers

In this work, bathocuproine (BCP) and bathophenanthroline (Bphen), commonly used in small-molecule organic solar cells (OSCs), are adopted as the buffer layers to improve the performance of the polymer solar cells (PSCs) based on poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV): [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) bulk heterojunction. By inserting BCP or Bphen between the active layer and the top cathode, all the performance parameters are dramatically improved. The power conversion efficiency is increased by about 70% and 120% with 5-nm BCP and 12-nm Bphen layers, respectively, when compared with that of the devices without any buffer layer. The performance enhancement is attributed to BCP or Bphen (i) increasing the optical field, and hence the absorption in the active layer, (ii) effectively blocking the excitons generated in MEH-PPV from quenching at organic/aluminum (Al) interface due to the large band-gap of BCP or Bphen, which results in a significant reduction in series resistance (Rs), and (iii) preventing damage to the active layer during the metal deposition. Compared with the traditional device using LiF as the buffer layer, the BCP-based devices show a comparable efficiency, while the Bphen-based devices show a much larger efficiency. This is due to the higher electron mobility in Bphen than that in BCP, which facilitates the electron transport and extraction through the buffer layer to the cathode.     

掺杂DCJTB聚合物电化学池（LEC）的发光性质

通过在聚合物电化学池(LEC)发光器件的发光材料MEH-PPV中掺杂红光染料DCJTB,对LEC器件的发光性质进行研究。基于器件结构为ITO/MEH-PPV PEO LiCF3SO3/Al的薄膜LEC器件,其电致发光峰在570nm左右,通过在MEH-PPV与PEO的混合膜中掺杂不同比例的红光染料DCJTB,随着掺杂比例的增加,器件的发光峰由570nm向红光波段移动,通过控制DCJTB的掺杂比例制备了发光峰在570~650nm连续变化的LEC电致发光器件。对其分析认为从LEC主体发光聚合物MEH-PPV到染料DCJTB间发生了良好的能量传递。     

有机薄膜晶体管驱动聚合物发光二极管研究

研究了有机薄膜晶体管(OTFT)与聚合物发光二极管(PLED)集成制备技术和相关物理问题.OTFT结构为栅极钽(Ta)/绝缘层五氧化二钽(Ta2O5)/有源层并五苯(Pentacene)/源漏极金(Au);PLED器件结构为ITO/PEDOT:PEO(polyethylene oxide)/P-PPV或MEH-PPV/Ba/Al.PEDOT:PEO,P-PPV和MEH-PPV薄膜层均采用丝网印刷技术,实现了OTFT与PLED器件集成发光.其中OTFT器件的阈值电压为-7V,迁移率为0.91cm2/(V.s),并通过OTFT驱动得到以P-PPV和MEH-PPV为发光层的PLED器件的发光亮度分别达到124和26cd/m2,电流效率分别为12.4和1.1cd/A.利用丝网印刷技术可以有效控制高分子薄膜的沉积区域,实现功能器件的集成.     

Increased luminance of MEH-PPV and PFO based PLEDs by using salmon DNA as an electron blocking layer

The effect of salmon DNA-CTMA as an electron blocking layer (EBL) has been examined on the performance of MEH-PPV and PFO-based light emitting diodes. Though the turn-on voltage increases with incorporation of EBL, a significant increase in luminance and luminous efficiency for both the devices is observed. The EBL improves the device performance by blocking electrons at the EBL-polymer interface, thereby increasing the recombination probability of electrons and holes. The luminance of the MEH-PPV based Bio-LED increases to 100 cd/m² from 30 cd/m² while a corresponding increase for the PFO based LED is to 160 cd/m² from 80 cd/m² with and without EBL, respectively.     

Influence of small-molecule material on performance of polymer solar cells based on MEH-PPV:PCBM blend

In this work,the influence of a small-molecule material,tris(8-hydroxyquinoline) aluminum (Alq 3),on bulk het-erojunction (BHJ) polymer solar cells (PSCs) is investigated in devices based on the blend of poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) and [6,6]-phenyl-C 61-butyric acid methyl ester (PCBM).By dop-ing Alq 3 into MEH-PPV:PCBM solution,the number of MEH-PPV excitons can be effectively increased due to the energy transfer from Alq 3 to MEH-PPV,which probably induces the increase of photocurrent generated by excitons dissociation.However,the low carrier mobility of Alq 3 is detrimental to the efficient charge transport,thereby blocking the charge collection by the respective electrodes.The balance between photon absorption and charge transport in the active layer plays a key role in the performance of PSCs.For the case of 5 wt.% Alq 3 doping,the device performance is deteriorated rather than improved as compared with that of the undoped device.On the other hand,we adopt Alq 3 as a buffer layer instead of commonly used LiF.All the photovoltaic parameters are improved,yielding an 80% increase in power conversion efficiency (PCE) at the optimum thickness (1 nm) as compared with that of the device without any buffer layer.Even for the 5 wt.% Alq 3 doped device,the PCE has a slight enhancement compared with that of the standard device after modification with 1 nm (or 2 nm) thermally evaporated Alq 3.The performance deterioration of Alq 3-doped devices can be explained by the low solubility of Alq 3,which probably deteriorates the bicontinuous D-A network morphology;while the performance improvement of the devices with Alq 3 as a buffer layer is attributed to the increased light harvesting,as well as blocking the hole leakage from MEH-PPV to the aluminum (Al) electrode due to the lower highest occupied molecular orbital (HOMO) level of Alq 3 compared with that of MEH-PPV.     

聚合物发光二极管中的负电容效应

采用交流阻抗谱技术,研究了以共轭聚合物(poly［2-methoxy,5-(2′-ethylhexoxy)-1,4-phenylenevinylene］)(MEH-PPV)为发光层,以带有胺基的聚芴共聚物poly［(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)］ (PF-NR₂)为电子传输层的发光二极管的交流响应特性. 对于结构为ITO/P 关键词： 2')" href="#">PF-NR₂ 聚合物发光二极管 交流阻抗谱 负电容效应     

含新型噁二唑类电子传输层的有机发光二极管性能研究

含吡啶基的噁二唑类材料(PDPyDP)作为一种新型的电子传输层被有效地应用于可溶性聚对苯乙炔(MEHPPV)为发光层的双层结构的有机发光二极管器件中,并将其光电性能与MEHPPV的单层结构器件及分别含苯环(PDPDP)和反1,2亚乙烯基(PDVDP)的另外两种二唑类电子传输层的双层结构器件进行比较.EL光谱测量表明,它们的发光均来自于MEHPPV层,而它们相似的器件电流和光输出随驱动电场变化的规律表明这些器件中相似的电荷转移过程,但电致发光阈值电场对于双层结构器件来说低于单层结构器件,而插入PDPyDP层的器件,其阈值电场最低.在电流密度为50mA/cm²时,单层器件及各插入PDVDP、PDPDP和PDPyDP的双层器件的外量子效率相对值分别为3×10^-3%,5×10^-3%,2×10^-2%和0.1%.并分析了插入PDPyDP使器件发光性能提高最为明显的原因.通过将此类器件的结构等作进一步优化,其最佳量子效率可高达1.44%.     

ZnSe(ZnS)纳米晶与MEH-PPV的共掺有机电致发光器件

采用水相法合成核壳结构ZnSe/ZnS 纳米晶,经X射线衍射(XRD)分析和透射电子显微镜(TEM)表征,证实所制备的样品为立方晶型闪锌矿结构ZnSe/ZnS量子点。按照一定的质量比将ZnSe/ZnS 纳米晶和有机聚合物MEH-PPV(poly ) 共掺并将其作为发光层,分别制备单层和多层有机电致发光器件,结构为ITO/MEH-PPV∶ZnSe(ZnS)(50 nm)/Al和 ITO/PEDOT∶PSS(70 nm)/ MEH-PPV∶ZnSe(ZnS)(50 nm)/BCP(15 nm)/Alq₃(12 nm) /LiF(0.5 nm)/Al。实验结果表明,多层发光器件的发光特性与单层器件不同,工作电压的增大使其发光峰发生了明显的蓝移。     

ZnO纳米棒在聚［2-甲氧基-5-（2-乙基-己氧基）-1，4-苯撑乙烯撑］固态阴极射线发光器件中的应用研究

利用ZnO纳米棒阵列场发射电极,以SiO₂做为电子加速层制备了固态阴极射线器件,发光层为聚［2-甲氧基-5-（2-乙基-己氧基）-1,4-苯撑乙烯撑］（MEH-PPV）,在交流驱动下得到了MEH-PPV的固态阴极射线发光,探测到了长波峰和短波峰的发射,并和无电子加速层的器件做了比较,证明混合激发模式下的器件在长波长的发光亮度更大. 关键词： 固态阴极射线 ZnO纳米棒阵列 电子加速 电致发光     

Photovoltaic characteristics of hybrid MEH-PPV-nanoparticles compound

Organic solar cell research has vastly developed in recent years. These organic solar cells however are still limited to low power conversion efficiencies. This has led to the generation of photovoltaic cells based on hybrid nanoparticle-organic polymer materials. The hybrid solar cell has the potential of bridging the efficiency gap which is present in organic and inorganic semiconductor materials. This paper focuses on characterization of fabricated hybrid active layer consisting of organic polymer infused with semiconductor nanoparticles. The active layer was deposited on the substrate using the spin coating technique. Materials used in the active layer are poly (2-methoxy, 5-(2-ethyl hexyloxy) p-phenyl vinylene) MEH-PPV, cadmium telluride (CdTe) and cadmium sulphide (CdS). The fabricated solar cells with active layer of MEH-PPV only were found to have a power conversion efficiency of 0.1% for 1 W, hybrid cell with active layer of MEH-PPV/CdTe has power conversion efficiency of 0.15% for 1 W and hybrid cell with active layer of MEH-PPV/CdTe/CdS has power conversion efficiency of 0.18% for 1 W.     

Organic/inorganic heterostructures for enhanced electroluminescence

In this work, organic/inorganic heterostructure electroluminescence devices are fabricated, in which the inorganic layers (ZnO, ZnS) act as the electron transfer layer and the hole blocking layer. Compared to single-organic-layer (MEH-PPV) devices, the heterostructure devices have a significantly enhanced luminous efficiency. The influences of the electric field and the barrier potential on the improvements in performance are analyzed in detail. The results are: (i) the introduction of the inorganic layer makes the injection of electrons easier; (ii) the hole current density is enhanced by the increase of the electric field in the organic layer due to a high dielectric constant of the inorganic layer and accumulation of electrons at the inorganic/organic interface; (iii) the electron-hole current density balance is improved.     

不同加速层材料对固态阴极射线发光的影响

在固态阴极射线发光中,过热电子碰撞激发有机材料而发光,因此加速层对电子的加速能力是影响器件发光亮度的关键因素之一.分别以SiO2和ZnO作为加速层.制备出两种固态阴极射线发光器件A:ITO/MEH-PPV/SiO2/Al和B:ITO/MEH-PPV/ZnO/Al.通过理论计算比较了电子从电极注入到加速层的隧穿电流密度以及SiO2层与ZnO层的电场强度,计算结果表明:在相同驱动电压下,SiO2作为电子加速层时隧穿电流的密度要大于ZnO层的隧穿电流的密度,并且SiO2层的电场强度比ZnO层的电场强度大.实验结果表明:SiO2作为加速层的器件的发光强度高于以ZnO为电子加速层器件的发光强度.     

SiO2厚度对类阴极射线发光中电子加速的影响

研究了有机 /无机复合结构ITO/SiO2 /MEH PPV/SiO2 /Al器件的类阴极射线发光性质 ,电子经过SiO2层加速后 ,激发MEH PPV层发光。发光除了MEH PPV激子发光峰外 ,还有一个带间复合的能量更高的短波发光峰。通过 2个发光峰随SiO2 层的厚度的变化规律 ,研究了SiO2 对电子的加速能力。     

Growth of single wall carbon nanotubes using PECVD technique: An efficient chemiresistor gas sensor

In this work, the uniform and vertically aligned single wall carbon nanotubes (SWCNTs) have been grown on Iron (Fe) deposited Silicon (Si) substrate by plasma enhanced chemical vapor deposition (PECVD) technique at very low temperature of 550 °C. The as-grown samples of SWCNTS were characterized by field emission scanning electron microscope (FESEM), high resolution transmission electron microscope (HRTEM) and Raman spectrometer. SWCNT based chemiresistor gas sensing device was fabricated by making the proper gold contacts on the as-grown SWCNTs. The electrical conductance and sensor response of grown SWCNTs have been investigated. The fabricated SWCNT sensor was exposed to ammonia (NH₃) gas at 200 ppm in a self assembled apparatus. The sensor response was measured at room temperature which was discussed in terms of adsorption of NH₃ gas molecules on the surface of SWCNTs. The achieved results are used to develope a miniaturized gas sensor device for monitoring and control of environment pollutants.     

Electrical and optical characteristics of various PPV derivatives (MEH-PPV, CzEH-PPV, OxdEH-PPV)

To investigate the electrical characteristics of polymer based light emitting diode (LED) devices, we fabricated the hole transport device (HTD) and the electron transport device (ETD). The ITO and Au with high work function were used as electrodes for the HTD, and the Al and Li:Al with low work function were used for the ETD. The active layer materials were poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-(N-carbazolyl)-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (CzEH-PPV), and poly[2-(4-tert-butylphenyl)-5-phenyl-1,3,4-oxadiazole-5(2-ethylhexoxy)-1,4-phenylene vinylene] (OxdEH-PPV). We measured the current density–applied field (J–E) characteristics of the HTD and ETD with various thickness at different temperatures. The results of the J–E curves were analyzed by using tunneling model, space charge limited conduction (SCLC) model, etc. In the SCLC model, the mobility of the hole and the electron of MEH-PPV is 10⁻⁶ and 10⁻⁸ cm²/Vs, respectively. For CzEH-PPV and OxdEH-PPV, the hole mobility is similar to the value of the electron mobility with 10⁻¹⁰ cm²/Vs. The luminescent efficiency of CzEH-PPV or OxdEH-PPV is higher than that of MEH-PPV. The results of photoconductivity of the systems qualitatively agrees with the result of the electrical measurement. We analyze that the balance of the electron and the hole mobility plays an important role for the efficiency of the LEDs.     

Enhanced performance of bi-layer Nb2O5 coated TiO2 nanoparticles/nanowires composite photoanode in dye-sensitized solar cells

Dye sensitized solar cells (DSSCs) were fabricated based on coumarin NKX-2700 dye sensitized bi-layer photoanode and quasi-solid state electrolyte sandwiched together with cobalt sulfide coated counter electrode. A novel bi-layer photoanode has been prepared using composite mixtures of 90 wt.% TiO₂ nanoparticles + 10 wt.% TiO₂ nanowires (TNPWs) as active layer and Nb₂O₅ is coated on the active layer, which acts as scattering layer. Hafnium oxide (HfO₂) was applied over the TNPWs/Nb₂O₅ photoanode film, as a blocking layer. TiO₂ nanoparticles (TNPs), TiO₂ nanowires (TNWs) and TNPWs/Nb₂O₅ were characterized by X-ray diffractometer (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM). The sensitizing organic dye coumarin NKX-2700 displayed maximum absorption wavelength (λ_max) at 525 nm, which could be observed from the UV–vis spectrum. DSSC-1 fabricated with composite bi-layer photoanode revealed enhanced photo-current efficiency (PCE) as compared to other DSSCs and illustrated photovoltaic parameters; short-circuit current J_SC = 18 mA/cm², open circuit voltage (V_OC) = 700 mV, fill factor (FF) = 64% and PCE (η) = 8.06%. The electron transport and charge recombination behaviors of DSSCs were investigated by electrochemical impedance spectra (EIS) and the results illustrated that the DSSC-1 showed the lowest charge transport resistance (R_tr) and the longest electron lifetime (τ_eff). Therefore, in the present investigation, it could be concluded that the novel bi-layer photoanode with blocking layer increased the short circuit current, electron transport and suppressed the recombination of charge carriers at the photoanode/dye/electrolyte interface in DSSC-1.