Photoluminescent behavior of heat-treated porous alumina films formed in malonic acid

In the present work IR spectroscopy, electron probe microanalysis (EPMA) and photoluminescence (PL) spectral measurements were applied to study the effect of treatment temperature (T) on compositional and luminescent properties of malonic acid alumina films. Our studies have shown that the heat treatment of anodic alumina films at investigated temperatures from 100 up to 700 °C changes their photoluminescence spectra considerably. An increase in T results in the PL intensity growth. When reaching its maximum at 600 °C the luminescence intensity then decreases drastically with further T growth. The films heat-treated at 500 and 600 °C demonstrate asymmetrical PL band with Gaussian peaks at 437 and 502 nm. We proved that the malonic acid species incorporated into the alumina bulk during the film formation are responsible for photoluminescence band with its peak at 437 nm.     

Nanoscale islands and color centers in porous anodic alumina on silicon fabricated by oxalic acid

Anodic oxidation of Al film on silicon substrate in oxalic acid is investigated through the j–t curves and its photoluminescence (PL). Their growth is analyzed with three typical stages according to j–t curve, which is agreed with the growth of nanoscale SiO₂ islands at the interface between Al film and Si substrate. The violet and blue peaks of PL were due to F⁺ and F centers, respectively. The evolvement from F⁺ to F centers during the late stage of anodization was revealed by the PL behavior at different stage.     

Effect of heat treatment on the structure of incorporated oxalate species and photoluminescent properties of porous alumina films formed in oxalic acid

The present work focuses on the use of IR spectroscopy and photoluminescence spectral measurements for studying the treatment temperature effect on the compositional and luminescent properties of oxalic acid alumina films. In line with the recent researches we have also found that heat treatment of porous alumina films formed in oxalic acid leads to considerable changes in their photoluminescence properties: upon annealing the intensity of photoluminescence (PL) increases reaching a maximum at the temperature of around 500 °C and then decreases. IR spectra of as-grown and heat-treated films have proved that PL emission in the anodic alumina films is related with the state of ‘structural’ oxalate species incorporated in the oxide lattice. These results allowed us to conclude that PL behavior of oxalic acid alumina films can be explained through the concept of variations in the bonding molecular orbitals of incorporated oxalate species including σ- and π-bonds.     

Effects of ordering quality of the pores on the photoluminescence of porous anodic alumina prepared in oxalic acid

Photoluminescence (PL) of the anodic alumina has been studied and related with quality of hexagonal ordering of the pores. The photoluminescence excitation (PLE) spectra have been successfully de-convoluted into primarily two sub-bands with peak positions at about 355 and 395 nm and maximum emission at about 450 and 500 nm, respectively; the former being assigned to F⁺ centers and the latter to the F-centers. A red shift in the PLE takes place, at a given anodizing voltage, when the quality of the hexagonal pore ordering deteriorates with an increase in number density of defects, i.e., pentagons and hexagons with missing pores. The metallic hills at these defects change the curvatures of the metal-oxide and the oxide-electrolyte interfaces that could affect the field distribution and hence the stress-state and other characteristics of the oxide at the defects. This allows a comparatively larger concentration of F centers (395 nm band), causing a red shift in the PLE with increase in defect density.     

Controlling surface states and photoluminescence of porous silicon by low-energy-ion irradiation

Porous silicon (PS) was irradiated by three kinds of low-energy ions with different chemical activity, namely argon ions, nitrogen ions and oxygen ions. The chemical activity of ions has significant effect on the surface states and photoluminescence (PL) properties of PS, The photoluminescence quenching after argon ions and nitrogen ions irradiation is ascribed to the broken Si-Si bonds, while the PL recovery is attributed to the oxidation of Si-H back bonds. Oxygen ions irradiation leads to the formation of a SiO_x layer with oxygen defects and PS shows different PL evolution than PS irradiated by argon ions and nitrogen ions.     

The effect of annealing on the photoluminescent and optical properties of porous anodic alumina films formed in sulfamic acid

Photoluminescent and optical properties of porous oxide films formed by two-step aluminum anodization at a constant potential of 30 V in sulfamic acid have been investigated after their annealing, ranging from room temperature up to 600 °C. X-ray diffraction reveals the amorphous nature of porous oxide films. Infrared and energy dispersive spectroscopy indicates the presence of sulfuric species incorporated in oxide films during the anodization. Photoluminescence (PL) measurements show PL bands in the range from 320 to 600 nm. There are two peaks in emission and excitation spectra. One emission peak is at constant wavelength centered at 460 nm and the other shifts from 390 to 475 nm, depending on excitation wavelength. For excitation spectra, one spectral peak is at constant wavelength at 270 nm and the other also shifts to longer wavelengths while increasing emission wavelength. Upon annealing of the as-prepared oxide films PL increases reaching maximum value at about 300 °C and then decreases. The results indicate the existence of two PL centers, one placed at surface of the pore wall, while the other positioned inside the oxide films.     

Structural, optical and electromagnetic properties of aluminum-clay nanocomposites

Aluminum pillared and exchanged bentonite particles were synthesized by the ion exchange method. The characteristics of the particles were investigated by Fourier-transform infrared spectra (FTIR), X-ray diffraction (XRD), thermal gravimetric analysis (TGA), scanning electron microscope (SEM), electron dispersive X-ray spectrometer (EDS), reflectance spectrophotometer (RS) and electromagnetic transition instrument (ETI). FTIR spectra showed a successful incorporation of Al complexes into the clay interlayer. The TGA result demonstrated an improvement in thermal stability of the Al-pillared clay compared with the untreated particles. SEM and EDX results showed the presence of aluminum aggregates on the surface of clay. It was also found that Al ions affect electromagnetic properties of the clay particles.     

Improvement of photoluminescence properties of porous silicon by silica passivation

Porous silicon (PS) was passivated by silica film using a sol-gel method; the photoluminescence (PL) properties were significantly improved; namely, PL intensity and stability increased and PL peak shifted to shorter wavelength. Scanning electron microscope (SEM) and Fourier transformed infrared spectroscope (FTIR) results indicated that silica passivation produced a compact film on the PS surface and modified the surface state of PS. The number of stable surface bonds (HSiO₃, HSiSiO₂ and H₂SiO₂) increased due to the oxidation of SiH back-bonds during the gelation process, and thus the PL intensity and stability were improved. Moreover, the blue-shift of PL peak was determined due to the increase in the ratio of SiO/SiH.     

Excitation and emission processes of Tb in porous anodic alumina

The strong photoluminescence (PL) of porous anodic alumina (PAA) with terbium deposition is reported. PAA, which has a regular pore morphology, is considered an effective template for fabricating luminescent composites. Tb was deposited onto PAA films by immersion in alcoholic solution with terbium chloride followed by heat treatment. The PL spectra demonstrate typical bands of Tb³⁺ corresponding to ⁵D₄ → ⁷F_j (j = 3, 4, 5, 6,) electron transition, with the maximum at 18,360 cm⁻¹ (⁵D₄ → ⁷F₅). The PL mechanism of Tb³⁺ was systematically studied with annealing temperature. The non-radiative relaxation channel is provided by OH hydroxyls at the surface of porous anodic alumina and, after annealing at 900 °C, the PL yield is highly improved. The PL intensity of Tb³⁺ increases with laser power and a saturation phenomenon, associated with the ratio of Tb³⁺ to Tb⁴⁺ ions, is observed at approximately 90 W/cm². Based on a theoretical model, the optical cross-section σ of terbium in PAA is estimated, with a value close to that of other porous materials doped with the rare-earth elements.     

中远红外傅里叶变换发光测量中双调制技术的实现与优化

对常规傅里叶变换发光测量方法进行改进,张入双调制技术,在迈克耳孙干涉仪一级调制的基础上,引入更高频率调制－锁相测量手段,通过这一测量方法的引入,并通过对调制频率和带通滤波器等测量参数的优化,基本消除了室温背景的黑体辐射在4μm－5μm以上区域对光致发光测量带来的严重干扰,在10μm长波红外波段得到了无室温背景黑体辐射影响的光致发光光谱,从而将光致发光测量推至5μm以上长波红外波段。     

微生物胞外聚合物对重金属镉的解毒作用及红外光谱分析

为探索微生物胞外物在微生物对重金属的抗性和去除过程中的作用,比较分析了对重金属镉具有不同抗性和去除率的菌株SCSE425-7和SCSE709-6胞外物的产生情况和菌株的红外光谱谱图。结果表明,在含镉条件培养时,菌株SCSE425-7表现了较高的镉抗性,分泌了相对较多的可溶性胞外多糖;而菌株SCSE709-6镉抗性较SCSE425-7低,但镉的生物去除性能较好,分泌了更多不可溶胞外聚合物。这说明,在重金属毒性胁迫下,微生物分泌的可溶性胞外多糖可能有助于提高微生物对重金属的抗性,而不可溶性胞外聚合物有助于重金属的微生物吸附。菌株红外光谱分析结果表明不可溶胞外聚合物上的酰胺基和羧基是其吸附镉离子的主要官能团。     

Influence of LiBr on photoluminescence properties of porous silicon

A new method has been developed to improve the photoluminescence intensity of porous silicon (PS), which is first time that LiBr is used for passivation of PS. Immersion of the PS in a LiBr solution, followed by a thermal treatment at 100 °C for 30 min under nitrogen, leads to a nine fold increase in the intensity of the photoluminescence. The atomic force microscope (AFM) shows an increase of the nanoparticle dimension compared to the initial dimension of the PS nanostructure. The LiBr covers the nanoparticles of silicon without changing the wavelength distribution of the optical excitation and emission spectra. Moreover, a significant decrease of reflectivity was observed for the wavelength in the range of 350-500 nm.     

傅里叶变换红外光谱与拉曼光谱分析碳青霉烯药物亚胺培南的结构特征

本文采用傅里叶变换红外光谱和激光拉曼光谱对碳青霉烯药物亚胺培南进行光谱检测,并对其的分子振动光谱与结构特征进行分析和探讨,分析了亚胺培南在固相状态下的结构形式,从而为药物合成及质量控制提供了重要的参考价值。     

8-羟基喹啉铝在多孔铝中的发光研究

利用多孔铝非常高的孔隙率,将8-羟基喹啉铝(Alq3)镶嵌到多孔铝中,得到Alq3/多孔铝镶嵌膜,研究了不同条件下制备的多孔铝镶嵌膜的荧光光谱。实验表明,Alq3在多孔铝中的发光峰位在490 nm左右,比其在固态粉末状态蓝移了许多。Alq3/多孔铝镶嵌膜的发光特性与多孔铝中嵌入Alq3分子的数量及聚集程度有关。当分子数量较多、聚集程度较大时,发光增强,光谱峰位红移,但聚集程度太大时,易发生荧光猝灭现象。数量较多时,由于Alq3分子大多以范德瓦尔斯力结合,聚体较少,所以峰位移动幅度不大。实验中还发现,Alq3因为处在小孔中,光学性质稳定,荧光光谱带宽超过100 nm,比一般染料大得多,这使Alq3/多孔铝镶嵌膜有可能在固体可调谐激光器方面得到新的应用;同时也为探究Alq3/多孔铝镶嵌膜在电致发光器件中的发光特性奠定了基础,为将其进一步推向实用提供了实验依据。     

FTIR结合热重(差热)技术对红壤地区大豆铝毒害的鉴定

采用傅里叶变换红外光谱法(FTIR), 结合热重和差热分析对不同铝浓度下的大豆根系进行了研究。结果表明, 在60和90 mg·L-1的铝液处理下,大豆根系的铝含量较高,达到显著铝毒害水平。在相同的波数范围内,不同铝浓度下其红外谱图的性状、波数及吸收峰的数目有所不同,3 300, 2 930, 1 542和721 cm-1下的吸收峰可作为鉴定大豆铝毒害的特征峰。3 300和2 930 cm-1特征峰在高浓度(60和90 mg·L-1)的铝毒害下明显高于其他浓度特征峰,1 542 cm-1的酰胺Ⅱ带特征峰在90 mg·L-1下没有显现, 721 cm-1吸收峰带却在Al 60和90 mg·L-1浓度下有表现。不同铝浓度下的热重(TG)和差热(DT)曲线在400～500 ℃温度范围内差别最大,TG曲线在大于30 mg·L-1的铝处理下与空白相比的质量损失减少,表明铝处理可能使根系木质化加重,产生难以燃烧的物质;DT曲线在60和90 mg·L-1的铝处理下出现双峰,可作为大豆铝毒害的鉴定标志之一。由此,FTIR结合热重(差热)技术可以用来鉴定红壤地区大豆的铝毒害。     

FTIR光谱方法对比分析少年和老年软骨成分含量

利用傅里叶变换红外(FTIR)光谱方法测量了少年和老年人软骨的红外光谱。由OMNIC 5.2软件计算了软骨中主要有机成分(胶原)和无机成分相关光谱带的积分面积。对代表有机物和无机物的某些谱带面积大小进行了比较。结果表明：软骨中有机成分(酰氨Ⅰ)含量与无机成分(PO3-₄)含量之比少年是老年人的5～7倍;然而脂类含量却有很大的不同, 对脂类(1 747 cm-1)与无机物(PO3-₄)的谱带积分面积进行比较,老年人软骨中脂类含量明显高于少年。作者认为人体随着年龄的增加,全身性的退化在软骨中的总体表现为有机成分(胶原)的减少(而脂类含量却增加)和无机成分(磷酸盐、碳酸盐等)相对的增加,使得软骨骨质变脆,失去过多弹性,耐磨性减低,是进一步容易导致骨病和骨伤的原因。     

支持向量回归在葡萄酒红外定量分析中的应用

近年来,基于朗伯-比尔定律和化学计量学的红外光谱定量分析方法发展十分迅速。其中,选择合适的预处理方法和有效的校正模型是定量分析成功的关键。选取30个葡萄酒样品,运用红外光谱结合向量回归算法SVR,对葡萄酒乳酸、酒石酸、乙酸异戊酯、3-甲基-1-丁醇进行了红外含量预测。选用标准归一化、基线校正以及异常样本点剔除三种谱图预处理方法,结合支持向量回归算法。实验结果表明该方法行之有效,计算值与标准值间的相对误差可被控制在5%以内。该方法可应用于葡萄酒中代表性物质含量的定量分析检测。     

Photoluminescence of porous silicon surfaces stabilized through Lewis acid mediated hydrosilylation

Lewis acid mediated hydrosilylation on porous silicon surfaces permits facile incorporation of a wide variety of functionalities through stable silicon–carbon bonds. The surfaces demonstrate high chemical stability with respect to hydrofluoric acid and aqueous base. The effects of the covalently bound surface groups on photoluminescence have been investigated and it was noted that alkyl and alkenyl termination induced only small decreases in photoluminescence efficiency. Aromatic substituents conjugated through a vinyl group, however, bring about almost complete quenching of the observed photoluminescence, regardless of substitution with either electron withdrawing (chloride) or donating (methyl) functionalities. The photoluminescence fatigue of dodecyl terminated surfaces in air for 12–16 h periods has been monitored and compared to unfunctionalized porous silicon. In air, the photoluminescence of dodecyl terminated surfaces degrades faster than the unfunctionalized porous silicon but under inert atmosphere (nitrogen), the rate of photoluminescence fatigue is slow in both cases and approximately equivalent.     

Effect of porosity on the laser induced damage threshold of porous anodic alumina films

Thermal stress of porous alumina films has been simulated by finite element method based on thermal transfer equation and thermal stress formulas. The influence of equivalent thermal conductivity and elastic modulus on laser induced damage threshold (LIDT) has been studied. It was found that the biggest circumferential tensile stress will be small with the porosity from 15% to 35%, and it effectively improves the LIDT. The equivalent thermal conductivity and LIDT decreases with the increase of porosity. The equivalent elastic modulus decreases and LIDT increase with the increase of porosity.     

铬诱导植物根细胞壁化学成分变化的FTIR表征

随着制革、电镀等行业的发展,铬污染已成为严重的环境问题而受到人们的关注。铬在植物体内主要积累于根部,植物根细胞壁化学变化与金属元素在植物体内的蓄积行为有密切关系。与其他方法比较,应用OMNI采样器-FTIR直接测定法表征细胞化学成分变化具有简便、快速和准确的优点。文章用FTIR对凤眼莲(Eichhornia crassipes)和空心莲子草(Alternanthera philoxeroides)根细胞壁进行了测定、分析和指认,并利用半定量分析方法研究了铬处理和对照处理下根细胞壁红外光谱的差异。结果表明,铬处理的凤眼莲和空心莲子草根细胞壁上的—OH向低频分别发生了20和6 cm-1的位移,同时凤眼莲的根细胞壁上—OH和自由羧基COO-等吸附位点数目较对照均有所增加,而空心莲子草则相反。说明这些基团与铬的结合密切相关,进一步解释了凤眼莲耐铬及其在根部积累铬的机理,说明FTIR在监测逆境诱导植物化学成分变化和环境绿色修复方面具有广泛的应用前景。