Influence of magnetic field on the electronic specific heat of the organic metal (BEDT-TTF)2KHg(SCN)4

Specific heat measurements of a single crystal of the organic metal (BEDT-TTF)₂KHg(SCN)₄ have been carried out at low temperatures and under a magnetic field of up to 14 T. A jump in the specific heat of about 0.1 J/mol·K, which corresponds to the antiferromagnetic phase transition, has been observed. The magnetic field is found to decrease the transition temperature at any field orientation. The strongest effect was found to take place in the field direction along the highly conducting ac plane. Zh. éksp. Teor. Fiz. 113, 1058–1063 (March 1998) Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.     

扫描隧道显微镜分辨能力的研究:对Si(111)-(7×7)表面的观察

用超高真空扫描隧道显微镜首次同时清晰地分辨出Si(111) (7×7)表面每个元胞中的 12个顶戴原子和 6个静止原子,这 6个静止原子的亮度与无层错半元胞内中心顶戴原子的亮度基本相同. 第一性原理计算图像和STM实验结果完全符合,针尖的尺度小于 7 时,可以完全同时分辨出Si(111) (7×7)表面的静止原子.     

Imaging the phenol molecule adsorbed on TiO2(110) by scanning tunneling microscopy

The image of a phenol molecule adsorbed on a TiO₂(110) single crystal was obtained, for the first time, by using the STM. TiO₂(110) has a tunneling active free region from + 1.35 eV below the Fermi level to −0.25 eV above the Fermi level. This region was found after measuring the surface density of states by using tunneling spectroscopy. The phenol molecule was fixed on TiO₂ utilizing the amphoteric nature of the TiO₂ surface. The image of the phenol molecule was measured at a dp bias of + 443 mV, which almost matches the energy of the OH and C-H stretching bond of the phenol molecule, in the free of energy levels region of the TiO₂(110) substrate. The electron density of phenol ring is apparent in the STM picture.     

Nature of contrast in Ge/Si(111) layers in scanning tunneling microscopy in the presence of Bi and Sb surfactants

It is known that the use of Bi surfactant (unlike Sb) upon the growth of Ge layers on Si(111) increases the contrast between Ge and Si atoms in a scanning tunneling microscope. This makes it possible to distinguish the Ge and Si surfaces. This effect is studied using computer simulation based on the density functional theory. To explain the observed difference between the Ge and Si layers, both structural and electronic effects are considered. The local density of electronic states, as well as the corresponding decay length to vacuum, has been calculated for each of the surfaces. The simulation results have been compared to the previous scanning tunneling microscopy data.     

Correlations between the scanning tunneling microscopy imaged configurations and the electronic structure on stepped Si(111)-( 7x7) surfaces

We have observed the dependence of the scanning tunneling microscopy (STM) imaged atom intensity within the (7x7) unit cell on stepped Si(111) as a function of the tunneling voltage. Pronounced differences from the corresponding atom intensity on the flat surface are observed for the contrast of atoms on the low versus the high side of the step and for the contrast between the faulted versus unfaulted subcells of the (7x7) structure. These differences can be accounted for by changes in the electronic structure within the (7x7) subcells adjacent to the step. Calculations of the local density of states and the STM images using a tight-binding method are in excellent agreement with the experimental results.