大功率LED纳米银烧结界面热阻和发光性能

利用纳米银烧结工艺制备大功率LED,重点探究了纳米银键合层的界面热阻及器件发光性能。通过将纳米银膏在不同温度下烧结,系统地研究了烧结温度对纳米银烧结后电阻率及接头剪切强度的影响,并分析了烧结后银膏的晶体结构及接头断口微观形貌。结果表明,接头键合强度和银膜导电率均随纳米银烧结温度的升高而增大。实验中还对比分析了纳米银烧结LED和传统锡银铜（SAC305）焊膏封装LED的界面热阻、结温以及发光性能。与纳米银烧结LED样品相比,传统焊膏封装LED的界面热阻和结温分别提高了8.9%和29.6%,说明纳米银键合层拥有更好的导热性并可及时为芯片散热降温。此外,通过高温老化实验,深入探讨了不同焊膏烧结LED的界面热阻及发光效率变化。实验表明,经过100℃下点亮500 h,纳米银和传统焊膏烧结LED样品的总热阻分别增大了0.03 K/W和4.28 K/W,但纳米银键合层界面热阻比老化前有所降低,同时纳米银烧结LED样品在不同电流下的发光效率始终高于传统焊膏封装LED样品。     

纳米银焊膏烧结大功率LED模块的高温可靠性研究

介绍了一种加速老化试验模型对LED模块进行寿命预测。分别采用纳米银焊膏、锡银铜焊料、导电银胶作为芯片粘结材料。控制环境温度和正向电流,在特定的时间测量光输出。比较了不同粘接材料及环境温度对LED老化过程的影响,并针对老化过程进行分析推导,建立老化数学模型,对其进行寿命预测。试验结果表明,纳米银焊膏粘接的模块对温度的抗性最好,纳米银焊膏有潜力在未来固态照明、投影和其他高功率器件领域得到应用。     

LED芯片与YAG荧光粉的相互热作用

大功率白光LED作为新一代照明光源的优势越来越明显,但其光衰机制综合了YAG荧光粉、LED芯片以及封装散热多重因素,衰减机理复杂。为研究LED芯片与荧光胶的相互热影响,基于蓝光LED器件基板温度可控实现蓝光LED器件温度稳定,并通过外部加热(以此作为LED热量作用于荧光胶)的方式控制荧光胶、荧光粉、硅胶的温度。重点研究了温度从27℃升高到220℃对三者光衰、主波长特性的影响。对荧光胶与LED芯片的近距离相互热影响进行了测试,结果表明荧光粉涂覆量会引起光功率的降低,而且随着光功率的降低,LED芯片结温呈现指数升高。实验证明荧光胶层与LED芯片是一个相互影响的复合热源模型。     

白光LED光斑均匀性的改进

用于照明领域的白光LED,其出射光斑的色度均匀性对于产品性能有着更加重要的意义.介绍了目前工业上制作白光LED主要采用的荧光粉灌封点胶工艺.并在目前主流灌封点胶工艺的基础上通过改善荧光粉层结构形状,以提高白光LED器件的出射光斑均匀性.并通过九点法对不同工艺结构下LED出射光斑的空间色度分布进行了测量和分析.通过分析,虽然采用不同的粉层结构,能够一定程度上改善白光光斑的色度均匀性.但总体上,采用这种传统的点胶工艺制作的器件的白光光斑性能不好,现有的荧光粉层灌封点胶工艺存在很大的弊端.荧光粉层的可控性是影响色度均匀性(即光斑均匀性)的主要因素,包括单个器件内的光斑和器件之间的颜色一致性都不理想.     

纳米银焊膏封装大功率COB LED模块的性能研究

为提高大功率LED的散热能力,采用具有更高熔点和更优良的导电导热性能的纳米银焊膏作为芯片粘结材料,以Al2O3基陶瓷基板封装COB LED模块。同时以Sn/Ag3.0/Cu0.5和导电银胶两种粘结材料作为对比,分别在27,50,80,100,120℃等环境温度中测试3种模块的光电性能来评估模块的热管理水平;在100℃环境下进行加速老化实验,评估3种LED模块的可靠性。测试结果表明,纳米银焊膏封装的大功率LED模块光电性能优异,且具有较强的长期可靠性。     

共晶芯片数及芯片位置对陶瓷共晶封装LED发光性能的影响EI北大核心CSCD

在大小为5.80 mm×2.55 mm×0.50 mm的8芯陶瓷封装基板上分别共晶了8颗和4颗1.125 mm×1.125 mm(45 mil×45 mil)的倒装蓝光LED芯片,在4.15 mm×2.55 mm×0.50 mm的6芯基板上共晶了6颗和3颗同规格芯片。在部分样品芯片侧边涂围了高反射白墙胶,研究了涂覆白墙胶对器件光功率的影响。在部分涂围了白墙胶样品的芯片顶面涂覆荧光粉硅胶混合层制备了白光器件,研究了共晶芯片数及共晶位置对蓝光/白光器件光功率、光通量和色温的影响。结果表明,共晶芯片的数量(额定功率)与陶瓷基板面积的匹配程度、陶瓷基板热电分离金属层与芯片共晶位置的匹配度会显著影响陶瓷封装LED的发光性能。     

有机薄膜电致发光器件工艺检测的一种简便方法——覆膜加热观测法

提出了一种简便易行、并与有机薄膜电致发光器件制备工艺完全兼容的工艺检测方法－－覆膜加热观测法。这种方法是在器件的制备工艺过程中,同时在铟锡氧化物（ITO）电极的各层有机薄膜上覆盖一层不透气的薄膜（如金属Al膜等）,接着进行快速加热,最后对器件表面进行形貌观测。采用这种方法,观察了器件表面气泡的形成过程,观察了加热温度、ITO表面处理以及有机物纯度对敢泡形成的影响。实验表明,覆膜加热观测法能有效地对工艺进行对比检测,从而达到改进工艺、提高器件质量的目的。     

大功率远程荧光粉型白光LED散热封装设计

针对大功率远程荧光粉型白光LED存在的散热问题,研究了其封装结构的散热设计方法。在分析现有远程荧光粉型白光LED封装结构及散热特点的基础上,提出将荧光粉层与芯片热隔离的同时开辟独立的荧光粉层散热路径的热设计方法。仿真分析结果表明:新的设计能够在不增加灯珠径向尺寸的同时改善荧光粉层的散热能力。在相同边界条件下,改进设计后的荧光粉层温度较改进前降低了10.7℃,芯片温度降低了0.55℃。在芯片基座上设置热隔离槽对芯片和荧光粉层温度的影响可以忽略。为了达到最优的芯片和荧光粉层温度配置,对荧光粉层与芯片之间封装胶层厚度进行优化是必要的。新的封装方法将芯片和荧光粉层的散热问题相互独立出来,既避免了二者的相互加热问题,又增加了灯珠光学设计的自由度。     

电致发光的完全悬空超薄硅衬底氮化镓基蓝光LED器件的制备与表征

为提升硅衬底氮化镓基LED(发光二极管)器件的光电性能和出光效率,本文提出了一种利用背后工艺实现的悬空薄膜蓝光LED器件.结合光刻工艺、深反应离子刻蚀和电感耦合等离子体反应离子刻蚀的背后工艺,制备了发光区域和大部分正负电极区域的硅衬底完全掏空,并减薄大部分氮化镓外延层的悬空薄膜LED器件.对悬空薄膜LED器件进行三维形...     

双进双出射流水冷大功率LED散热系统研究

针对大功率LED存在的散热问题,提出了一种双进双出射流水冷散热器,将其与现有射流水冷散热器的散热效果进行对比,并设计了基于射流水冷的大功率LED散热系统实验平台.在散热系统全功率工作条件下,LED底部温度分布均匀,并且保持在32℃左右,表明散热系统具有良好的均温性能和散热性能,满足大功率LED的散热要求.利用极差分析法,得到了水泵和风扇对系统散热效果的影响权重,优化了散热系统的工作功率,得到一组较优的控制水泵和风扇功率的脉冲宽度调制信号.在该组控制信号下,降低了散热系统的功耗,同时保证了系统散热效果,达到了节能目的.     

Au80Sn20合金焊料制备工艺

针对高功率二极管激光器的封装要求,通过磁控溅射的方法制备了Au80Sn20合金焊料,使用扫描电子显微镜（SEM）观察其微结构和表面形貌;利用能谱仪（EDX）和X射线荧光测试仪分析其成分;采用差热分析法（DTA）测试其熔化温度,并用制备的Au80Sn20合金焊料进行了可焊性实验。结果表明:磁控溅射法可以制备Au80Sn20合金焊料,其制备的Au80Sn20合金焊料表面无明显缺陷,结构致密;成分与理论值接近;熔点与理论熔点接近;焊接浸润性好,空洞率小,强度大。     

Effects of soft beam energy on the microstructure of Pb37Sn, Au20Sn, and Sn3.5Ag0.5Cu solder joints in lensed-SM-fiber to laser-diode-affixing application

This paper reports on the effectiveness of soft beam energy as a heat source to form an optimum solder joint to fix a lensed fiber permanently on a Ni/Au-plated substrate. Solders, i.e., Pb37Sn, Au20Sn, and Sn3.5Ag0.5Cu (SAC) [wt%] were evaluated for this fluxless application. The microstructures of the solder joints have been examined using scanning electron microscopy (SEM), in order to understand the response of these solder materials to the focussed white light. Obviously, the exposure time has a greater effect on the soldering temperature before reaching the peak temperature, which is determined by the power. A power setting of 40 W can reach approximately 340 °C, 30 W can reach about 310 °C while 25 W can easily reach 260 °C. In general, a higher soldering temperature than the melting temperature is required to form good wetting solder joints for fluxless applications. However, too high an input thermal energy may result in premature aging for the cases of Pb37Sn and SAC, and lateral cracks for the case of Au20Sn. The thermal cracks and voids observed in Au20Sn solder joint were attributed to the fact that the soft beam heating profile does not suit the AuSn preform. Out of these three solder types, SAC demonstrated just the right response to the soft beam, i.e., good wetting, fine and homogeneous structure, and no cracks or other visible failures.     

照明用大功率发光二极管封装材料的优化设计

根据传热理论,建立了大功率发光二极管的有限元模型.选择了4种键合材料（高导热导电银胶、纳米银焊膏,大功率芯片键合胶、Sn70Pb30）,4种基板材料（Al2O3、AlN、Al-SiC、铜钼合金）.采用ANSYS有限元热分析软件进行了温度场仿真,得到了大功率发光二极管封装材料的最优选择.研究了基板厚度、芯片输出功率及外接热沉时对发光二极管结温的影响.结果表明:纳米银焊膏-AlN组合具有最优的散热效果|增加散热基板厚度提高散热能力的作用不大|单个发光二极管输出功率有限,应优化封装结构并采用多芯片阵列来满足照明级的需要|外接铝热沉能达到理想的散热效果.     

Examination of compound formation at interface of tin–bismuth–silver solder and copper substrate by using electron probe micro analysis

The wettability of tin–bismuth–silver solders on copper was studied by using energy‐dispersive x‐ray spectrometry (EDXRS) for elemental analysis. Four kinds of fluxes were used. The wettability of conventional eutectic tin–lead solder was much higher than that of solders based on tin–bismuth systems. The poor wettability of tin–bismuth solders may be caused by the growth of dendritic copper–tin compounds at the copper/solder interface, in contrast to the case of tin–lead solder. The wettability was improved by addition of silver to the solder. In the tin–bismuth–silver system, EDXRS mapping of elements revealed that silver was abnormally concentrated at the copper/solder interface even in the initial stage of their contact. When using FR‐type fluxes, the solder exhibited maximum wettability in the range from 1–4 mass% Ag addition. The layer thickness of the Cu–Sn compound formed on Cu was smallest with a 2% Ag addition. This may correspond to the improvement of the solder wettability. Copyright © 2002 John Wiley & Sons, Ltd.     

High-power vertical-cavity surface-emitting lasers bonded with efficient packaging

<正>High-power vertical-cavity surface-emitting lasers(VCSELs) are processed using a wet thermal-selective oxidation technique.The VCSEL chips are packaged by employing three different bonding methods of silver solder,In-Sn solder,and metalized diamond heat spreader.After packaging,optical output power, wavelength shift,and thermal resistance of the devices are measured and compared in an experiment.The device packaged with a metalized diamond heat spreader shows the best operation characteristics among the three methods.The 200-μm-diameter device bonded with a metalized diamond heat spreader produces a continuous wave optical output power of 0.51 W and a corresponding power density of 1.6 kW/cm~2 at room temperature.The thermal resistance is as low as 10 K/W.The accelerated aging test is also carried out at high temperature under constant current mode.The device operates for more than 1000 h at 70℃,and the total degradation is only about 10%.     

Effect of impurities on cadmium density during cyclic thermal treatment

A study has been made of the effects of 0.05 wt.% of Ag, Au, Bi, Cu, Hg, In, Mg, Pb, Sb, Sn, and Zn on the cadmium density during cyclic thermal treatment in the temperature range 20–300 °C. The density decreases if the impurity is relatively insoluble and forms a eutectic system with cadmium. On the other hand, the density may not change if the maximum temperature of the cycle does not exceed the melting point of this eutectic system, or if the samples are not subjected to sufficiently high thermal stresses.Translated from Izvestiya Vysshikh Uchenbykh Zavedenii, Fizika, Vol. 12, No. 7, pp. 74–80, July, 1969.     

Silver nanosintering: a lead-free alternative to soldering

We propose a lead-free silver paste as a replacement for a high-temperature lead-rich solder used for electronics. The pastes tested here contain a small amount of solvent, but primarily consist of silver powder and alkoxide-passivated silver nanoparticles that undergo nanosintering when heated. The pastes were used to connect silicon diode chips to copper bases at 350°C in nitrogen ambient without external pressure. The resulting diode packages had electrical and thermal properties about equal to those with lead-solder joints. The mechanical strengths also were comparable to the lead joint. These properties make this nanosilver paste the first viable lead-free alternative to a lead solder.     

Ultrasonic semi-solid coating soldering 6061 aluminum alloys with Sn–Pb–Zn alloys

In this paper, 6061 aluminum alloys were soldered without a flux by the ultrasonic semi-solid coating soldering at a low temperature. According to the analyses, it could be obtained that the following results. The effect of ultrasound on the coating which promoted processes of metallurgical reaction between the components of the solder and 6061 aluminum alloys due to the thermal effect. Al₂Zn₃ was obtained near the interface. When the solder was in semi-solid state, the connection was completed. Ultimately, the interlayer mainly composed of three kinds of microstructure zones: α-Pb solid solution phases, β-Sn phases and Sn–Pb eutectic phases. The strength of the joints was improved significantly with the minimum shear strength approaching 101 MPa.     

AuSn焊料组分对半导体激光器件性能的影响

为了提高半导体激光器件的可靠性,研究了AlN过渡热沉上AuSn焊料不同配比对半导体激光器器件性能的影响。利用MOCVD 生长975 nm芯片,通过对半导体激光器器件表面形貌、空洞、光谱特性、热阻特性以及寿命测试,Au组分比重低于72%的AlN过渡热沉封装器件表面颜色明显不同于组分相对较高的,空洞较多,平均波长红移约5 nm,在寿命试验中过早失效,最终得出AuSn焊料中Au组分比重最好大于72%,小于80%,才能保证封装器件焊接质量,为实际生产和使用提供了指导意义。     

温度和电流对白光LED发光效率的影响

对大功率白光LED发光效率进行了研究,得出温度和电流对LED发光效率的影响:随着温度的升高,势阱中辐射复合几率降低,从而降低了发光效率;电流的升高,使更多的非平衡载流子穿过势垒,降低了发光效率。LED工作时,过高的工作温度或者过大的工作电流都会产生明显的光衰:如果LED工作温度超过芯片的承载温度,这将会使LED的发光效率快速降低,产生明显的光衰,并且对LED造成永久性破坏;如果LED的工作电流超过芯片的饱和电流,也会使LED发光效率快速降低,产生明显的光衰。并且LED所能承载的温度与饱和电流有一定关系,散热良好的装置可以使LED工作温度相对降低些,饱和电流也可以更大,LED也就可以在相对较大的电流下工作。